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    • 32. 发明申请
    • MEMORY ERASING METHOD AND DRIVING CIRCUIT THEREOF
    • 存储器擦除方法及其驱动电路
    • US20140010013A1
    • 2014-01-09
    • US13540803
    • 2012-07-03
    • HSIAO-HUA LUCHIH-MING KUOYU-CHUN WANG
    • HSIAO-HUA LUCHIH-MING KUOYU-CHUN WANG
    • G11C16/16G11C16/04
    • G11C16/16
    • A memory erasing method and a driving circuit thereof are introduced, when cells are selected to be erased, the method includes setting gates of cells which are not selected to be erased and are located at a selected block, drains of all the cells in a selected bank, and the gate of the unselected cells to be floating; supplying a positive voltage to all the sources in a selected bank and their shared P well and N well; and supplying a negative voltage to the gates of the cells located in a selected block and selected to be erased. Accordingly, a positive coupling voltage from P wells is received whenever gates are floating, so as to inhibit erasure of unselected blocks and thereby streamline decoding, thus making it easy to attain further expansion of blocks or banks with a small layout area and partition of sectors in the blocks.
    • 引入存储器擦除方法及其驱动电路,当选择要擦除单元时,该方法包括设置未被选择被擦除且位于所选块的单元的门,所选择的单元的所有单元的漏极 银行,未选择的单元格的门将浮动; 为所选择的银行的所有来源提供正电压及其共享的P阱和N阱; 并向位于所选块中的单元的栅极提供负电压并选择被擦除。 因此,每当门浮动时,都接收来自P阱的正耦合电压,以便禁止未选择的块的擦除,从而简化解码,从而使得容易实现具有小布局面积和扇区划分的块或块的进一步扩展 在街区。