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1. 发明申请

US20180277401A1 SUBSTRATE PROCESSING METHOD AND APPARATUS 审中-公开
公开(公告)号：US20180277401A1
公开(公告)日：2018-09-27
申请号：US15933237
申请日：2018-03-22
申请人： EBARA CORPORATION
发明人： Toshifumi WATANABE , Satoru YAMAMOTO , Yu MACHIDA
IPC分类号： H01L21/67 , H01L21/02 , H01L21/66
CPC分类号： H01L21/67051 , B24B9/065 , B24B21/002 , B24B21/004 , B24B21/008 , B24B37/00 , H01L21/02021 , H01L21/02087 , H01L21/67288 , H01L22/12 , H01L22/20
摘要： A substrate processing method which can clean a peripheral portion of a substrate after polishing and can check the cleaning effect of the peripheral portion of the substrate is disclosed. The substrate processing method includes polishing a peripheral portion of the substrate by pressing a polishing tape having abrasive grains against the peripheral portion of the substrate with a first head, cleaning the peripheral portion of the substrate by supplying a cleaning liquid to the peripheral portion of the substrate after polishing, bringing a tape having no abrasive grains into contact with the peripheral portion of the substrate after cleaning by a second head, applying light to the tape and receiving reflected light from the tape by a sensor, and judging that the peripheral portion of the substrate is contaminated when an intensity of the received reflected light is lower than a predetermined value.

2. 发明授权

US09929017B2 Etching method using hydrogen peroxide solution containing tungsten 有权
公开(公告)号：US09929017B2
公开(公告)日：2018-03-27
申请号：US13788216
申请日：2013-03-07
申请人： TOSHIBA MEMORY CORPORATION
发明人： Nagisa Takami , Yoshihiro Uozumi
IPC分类号： H01L21/306 , H01L21/66 , H01L21/02 , H01L21/3213 , H01L21/67
CPC分类号： H01L21/30604 , H01L21/02068 , H01L21/02087 , H01L21/32134 , H01L21/6708 , H01L22/10 , H01L2924/0002 , H01L2924/00
摘要： An etching method according to an embodiment, includes performing etching on a material having tungsten (W) as a main component by using as an etchant a chemical solution having hydrogen peroxide as a main component. The chemical solution contains 12 ppm or more and 100,000 ppm or less of W.

3. 发明申请

US20180040474A1 METAL-COMPOUND-REMOVING SOLVENT AND METHOD IN LITHOGRAPHY 审中-公开
公开(公告)号：US20180040474A1
公开(公告)日：2018-02-08
申请号：US15491066
申请日：2017-04-19
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： An-Ren Zi , Joy Cheng , Ching-Yu Chang
IPC分类号： H01L21/027 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32 , B08B3/08 , G03F7/40 , G03F7/42 , G03F7/039 , G03F7/038 , C11D11/00 , H01L21/02 , G03F7/095
CPC分类号： H01L21/0274 , B08B3/08 , C11D11/0047 , G03F7/0043 , G03F7/038 , G03F7/039 , G03F7/0752 , G03F7/094 , G03F7/095 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , G03F7/426 , G03F7/70033 , G03F7/70091 , G03F7/70233 , G03F7/70308 , H01L21/02052 , H01L21/0206 , H01L21/02087 , H01L21/0209 , H01L21/67051
摘要： A wafer is rinsed with a solvent. The wafer has an increased hydrophobicity as a result of being rinsed with the solvent. A metal-containing material is formed over the wafer after the wafer has been rinsed with the solvent. One or more lithography processes are performed at least in part using the metal-containing material. The metal-containing material is removed during or after the performing of the one or more lithography processes. The increased hydrophobicity of the wafer facilitates a removal of the metal-containing material.

4. 发明授权

US09753371B2 Edge bead removal apparatus 有权
公开(公告)号：US09753371B2
公开(公告)日：2017-09-05
申请号：US15369075
申请日：2016-12-05
申请人： Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Yang Liu , Qiang Wu
IPC分类号： B08B3/02 , B08B3/08 , B08B5/02 , G03F7/42 , H01L21/02 , H01L21/67 , B08B3/04 , F26B21/00
CPC分类号： G03F7/42 , B08B3/02 , B08B3/04 , B08B3/08 , B08B5/02 , F26B21/004 , H01L21/02041 , H01L21/02057 , H01L21/02087 , H01L21/67017 , H01L21/67051 , H01L21/6708
摘要： An edge bead removal apparatus is provided. The edge bead removal apparatus includes a clamping unit configured to clamp a cylindrical reticle and cause the cylindrical reticle to incline with a pre-determined angle and to rotate around a central axis. The edge bead removal apparatus also includes an edge bead removal solvent nozzle configured to spray an edge bead removal solvent to remove edge beads on both edges of the cylindrical reticle.

5. 发明授权

US09666440B2 Polishing apparatus and polishing method 有权
公开(公告)号：US09666440B2
公开(公告)日：2017-05-30
申请号：US14142690
申请日：2013-12-27
申请人： EBARA CORPORATION
发明人： Masayuki Nakanishi , Kenji Kodera , Nobuhiro Yanaka
IPC分类号： H01L21/304 , B24B9/06 , B24B57/02 , B24B37/02 , B24B9/08 , H01L21/02
CPC分类号： H01L21/304 , B24B9/065 , B24B9/08 , B24B37/02 , B24B57/02 , H01L21/02057 , H01L21/02087
摘要： A polishing apparatus 100 includes a holding stage 4 that holds a central portion of a back surface of a substrate W, a motor M1 that rotates the holding stage 4, a front surface nozzle 36 that feeds a rinse liquid to a front surface of the substrate W, a back surface nozzle 37 that feeds the rinse liquid to a back surface of the substrate W, a rinse liquid control section 110 that feeds the rinse liquid through the back surface nozzle 37 after a preset time elapses since the start of feeding of the rinse liquid through the front surface nozzle 36 and a polishing head assembly 1A that polishes a peripheral portion of the substrate installed on the holding stage 4 after the rinse liquid control section 110 feeds the rinse liquid to the substrate W.

6. 发明申请

US20170133218A1 APPARATUS AND METHOD FOR WAFER CLEANING 审中-公开
公开(公告)号：US20170133218A1
公开(公告)日：2017-05-11
申请号：US15416331
申请日：2017-01-26
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Hsin-Hsien LU , Ting-Kui CHANG , Jung-Tsan TSAI
IPC分类号： H01L21/02 , H01L21/306 , H01L21/67
CPC分类号： H01L21/02087 , H01L21/02057 , H01L21/30625 , H01L21/67046 , H01L21/67051 , H01L21/67219
摘要： A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

7. 发明申请

US20170040155A1 Removal of Particles on Back Side of Wafer 审中-公开
标题翻译：去除晶片背面的颗粒
公开(公告)号：US20170040155A1
公开(公告)日：2017-02-09
申请号：US15295731
申请日：2016-10-17
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Hsun-Peng Lin , Hsin-Kuo Chang , Han-Chih Chung , Yueh-Chih Wang , Chi-Jen Hsieh
IPC分类号： H01L21/02 , B08B15/04 , B08B1/00 , H01L23/544 , H01L21/67
CPC分类号： H01L21/0209 , B08B1/002 , B08B15/04 , H01L21/02057 , H01L21/02087 , H01L21/67046 , H01L21/68 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of cleaning a semiconductor wafer during a process of fabricating a semiconductor device. The method includes loading a semiconductor wafer into a wafer handling system. The method includes removing contaminant particles from an edge region of the wafer from the back side, wherein alignment marks are located in the edge region. The method includes collecting the removed contaminant particles and discarding the collected contaminant particles out of the wafer handling system. The disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer cleaning device that is operable to clean a predetermined region of the wafer on the back surface thereof. The predetermined region of the wafer at least partially overlaps with one or more alignment marks.
摘要翻译：本公开提供了在制造半导体器件的工艺期间清洁半导体晶片的方法。该方法包括将半导体晶片加载到晶片处理系统中。该方法包括从背面从晶片的边缘区域去除污染物颗粒，其中对准标记位于边缘区域中。该方法包括收集去除的污染物颗粒并将收集的杂质颗粒丢弃出晶片处理系统。本公开还提供了一种用于制造半导体器件的装置。该装置包括晶片清洁装置，其可操作以清洁其背面上的晶片的预定区域。晶片的预定区域至少部分地与一个或多个对准标记重叠。

8. 发明申请

US20160260625A1 POLISHING DEVICE AND POLISHING METHOD 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：US20160260625A1
公开(公告)日：2016-09-08
申请号：US14844214
申请日：2015-09-03
申请人： Kabushiki Kaisha Toshiba
发明人： Masayoshi ADACHI , Jun TAKAYASU
IPC分类号： H01L21/67 , H01L21/02 , B24B49/00 , B24B21/00 , B24B49/12
CPC分类号： H01L21/67092 , B24B21/002 , B24B49/003 , B24B49/12 , H01L21/02035 , H01L21/02087 , H01L21/67219 , H01L22/12 , H01L22/26
摘要： According to one embodiment, a polishing device includes a stage holding a wafer, a polishing part polishing a film formed on a circumferential edge portion of the wafer, a detector detecting a residual portion of the film on the circumferential edge portion, a first movable part moving the detector along a surface of the circumferential edge portion; and a controller controlling the polishing part based on a state of the circumferential edge portion detected by the detector.
摘要翻译：根据一个实施例，抛光装置包括保持晶片的台，抛光形成在晶片的周缘部分上的膜的抛光部分，检测在周缘部分上的膜的残留部分的检测器，第一可移动部分沿着所述周缘部的表面移动所述检测器; 以及控制器，其基于由所述检测器检测到的所述周缘部的状态来控制所述研磨部。

9. 发明申请

US20160247684A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20160247684A1
公开(公告)日：2016-08-25
申请号：US15015217
申请日：2016-02-04
申请人： Renesas Electronics Corporation
发明人： Toshifumi SUGANAGA
IPC分类号： H01L21/308 , H01L21/02 , H01L21/027 , H01L21/3065
CPC分类号： H01L21/02087 , H01L21/0332 , H01L21/31144 , H01L21/32139
摘要： To improve the manufacturing yield of a semiconductor device, there is to provide a method of manufacturing a semiconductor device using a multilayer resist, in which before performing water repelling processing for immersion exposure on a wafer, an anti-reflection film, an underlayer film, and an intermediate film applied to a wafer edge portion are eliminated through rinse processing.
摘要翻译：为了提高半导体器件的制造成品率，提供一种使用多层抗蚀剂制造半导体器件的方法，其中在进行浸没在晶片上的防水处理之前，防反射膜，下层膜，并且通过漂洗处理消除了施加到晶片边缘部分的中间膜。

10. 发明授权

US09412639B2 Method of using separate wafer contacts during wafer processing 有权
标题翻译：在晶片加工过程中使用单独晶片触点的方法
公开(公告)号：US09412639B2
公开(公告)日：2016-08-09
申请号：US14562386
申请日：2014-12-05
申请人： TEL FSI, Inc.
发明人： Kevin L. Siefering , David DeKraker
IPC分类号： H01L21/687 , H01L21/67 , H01L21/02
CPC分类号： H01L21/68728 , H01L21/02087 , H01L21/67051
摘要： Embodiments of the invention are directed towards improving on-wafer process performance and processing at increased processing fluid/wafer temperature while maintaining good process performance. A method for processing a wafer in a process chamber is described where the process chamber includes a wafer holder having first and second sets of edge grippers for independently securing the wafer at the wafer edge during processing, treating the wafer with a first processing fluid while securing the wafer with the first set of edge grippers, but not with the second set of edge grippers, treating the wafer with a second processing fluid while securing the wafer with the first set of edge grippers, but not with the second set of edge grippers, and treating the wafer with a third processing fluid while securing the wafer with the second set of edge grippers, but not with the first set of edge grippers.
摘要翻译：本发明的实施例旨在在保持良好的工艺性能的同时在提高加工流体/晶片温度的同时提高晶圆上工艺性能和加工。描述了一种在处理室中处理晶片的方法，其中处理室包括具有第一和第二组边缘夹持器的晶片保持器，用于在处理期间独立地将晶片固定在晶片边缘处，同时固定第一处理流体具有第一组边缘夹持器的晶片，但不具有第二组边缘夹持器，用第二处理流体处理晶片，同时用第一组边缘夹持器固定晶片，而不是与第二组边缘夹持器，以及用第三处理流体处理晶片，同时用第二组边缘夹持器固定晶片，而不是与第一组边缘夹持器固定晶片。

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