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31. 发明授权

US07548467B2 Bias voltage generator and method generating bias voltage for semiconductor memory device 有权
标题翻译：用于半导体存储器件的偏置电压发生器和产生偏置电压的方法
公开(公告)号：US07548467B2
公开(公告)日：2009-06-16
申请号：US11955562
申请日：2007-12-13
申请人： Hye-Jin Kim , Kwang-Jin Lee , Woo-Yeong Cho , Mu-Hui Park
发明人： Hye-Jin Kim , Kwang-Jin Lee , Woo-Yeong Cho , Mu-Hui Park
IPC分类号： G11C5/14
CPC分类号： G11C13/004 , G11C5/147 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0038 , G11C16/30 , G11C2013/0054 , G11C2213/72
摘要： There are provided a bias voltage generator, a semiconductor memory device having the bias voltage generator, and a method for generating the bias voltage. The bias voltage generator which generates the bias voltage to control a sensing current supplied to a memory cell for sensing data is characterized in that the bias voltage is output in response to an input voltage being applied, so that a slope of the bias voltage to the input voltage is different in at least two sections divided corresponding to a level of the input voltage.
摘要翻译：提供了偏置电压发生器，具有偏置电压发生器的半导体存储器件以及用于产生偏置电压的方法。产生用于控制提供给存储单元的感测电流以感测数据的偏置电压的偏置电压发生器的特征在于，响应于所施加的输入电压而输出偏置电压，使得偏置电压的斜率至少两个部分的输入电压不同，对应于输入电压的电平。

32. 发明申请

US20090102037A1 SEMICONDUCTOR PACKAGE, MODULE, SYSTEM HAVING SOLDER BALL COUPLED TO CHIP PAD AND MANUFACTURING METHOD THEREOF 失效
标题翻译：半导体封装，模块，具有耦合到芯片焊盘的焊枪的系统及其制造方法
公开(公告)号：US20090102037A1
公开(公告)日：2009-04-23
申请号：US12251534
申请日：2008-10-15
申请人： Hye-jin KIM
发明人： Hye-jin KIM
IPC分类号： H01L23/488 , H01L21/56
CPC分类号： H01L23/49816 , H01L23/3128 , H01L23/49827 , H01L24/48 , H01L24/73 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L2224/05001 , H01L2224/05568 , H01L2224/05644 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06541 , H01L2225/06558 , H01L2225/06565 , H01L2924/00014 , H01L2924/01327 , H01L2924/15311 , H01L2924/181 , H05K3/3436 , H05K2201/09572 , H05K2201/10666 , Y02P70/613 , H01L2924/00 , H01L2924/00012 , H01L2224/32225 , H01L2224/05099 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package structure having a solder ball coupled to a chip pad and a manufacturing method thereof, a semiconductor package module, and a system. A circuit board includes a through hole therein, and a conductor is formed on a sidewall of the through hole. A first semiconductor chip including a first chip pad is mounted on the circuit board. A solder ball is disposed in the through hole and is bonded to the conductor and the first chip pad. Therefore, an underfill can be removed from a semiconductor package, and thus, the semiconductor package can be reduced in thickness.
摘要翻译：一种具有耦合到芯片焊盘的焊球的半导体封装结构及其制造方法，半导体封装模块和系统。电路板在其中包括通孔，并且导体形成在通孔的侧壁上。包括第一芯片焊盘的第一半导体芯片安装在电路板上。焊球设置在通孔中并且接合到导体和第一芯片焊盘。因此，可以从半导体封装中去除底部填充物，因此可以减小半导体封装的厚度。

33. 发明授权

US07463509B2 Magneto-resistive RAM having multi-bit cell array structure 有权
标题翻译：具有多位单元阵列结构的磁阻RAM
公开(公告)号：US07463509B2
公开(公告)日：2008-12-09
申请号：US11260602
申请日：2005-10-27
申请人： Hye-Jin Kim , Woo-Yeong Cho , Hyung-Rok Oh
发明人： Hye-Jin Kim , Woo-Yeong Cho , Hyung-Rok Oh
IPC分类号： G11C11/00
CPC分类号： H03L7/0812 , B82Y10/00 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5615 , H01L27/228 , H03L7/0891
摘要： A magnetic random access memory (RAM) with a multi-bit cell array structure includes an access transistor formed on a substrate, first through third resistance-variable elements, and first through third current supplying lines. The first through third resistance-variable elements are disposed between a bit line and the access transistor, and electrically connected to each other. The first through third current supplying lines are stacked alternately with the first through third resistance-variable elements. The first through third resistance-variable elements have equal resistances.
摘要翻译：具有多比特单元阵列结构的磁随机存取存储器（RAM）包括形成在基片上的存取晶体管，第一至第三电阻可变元件以及第一至第三电流线。第一至第三电阻可变元件设置在位线和存取晶体管之间，并且彼此电连接。第一至第三电流供应线与第一至第三电阻可变元件交替堆叠。第一至第三电阻可变元件具有相等的电阻。

34. 发明授权

US07349245B2 Non-volatile phase-change memory device and associated program-suspend-read operation 有权
标题翻译：非易失性相变存储器件和相关的程序挂起读操作
公开(公告)号：US07349245B2
公开(公告)日：2008-03-25
申请号：US11486100
申请日：2006-07-14
申请人： Hye-jin Kim , Kwang-jin Lee , Sang-Beom Kang , Mu-hui Park
发明人： Hye-jin Kim , Kwang-jin Lee , Sang-Beom Kang , Mu-hui Park
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： G11C8/12 , G11C11/5678 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C2013/0078
摘要： A method of performing a program-suspend-read operation in a PRAM device comprises programming a write block comprising N unit program blocks in response to a program operation request, and suspending the program operation after programming M unit program blocks, where M is less than N, in response to a read operation request. The method further comprises executing the requested read operation, and then resuming the programming of the write data block and programming (N−M) remaining unit program blocks.
摘要翻译：一种在PRAM设备中执行程序挂起读取操作的方法包括响应于程序操作请求编程包含N个单元程序块的写入块，并且在对M个单元程序块进行编程之后暂停编程操作，其中M小于 N，响应于读取操作请求。该方法还包括执行所请求的读取操作，然后恢复写入数据块和编程（N-M）剩余单元程序块的编程。

35. 发明申请

US20080065380A1 ON-LINE SPEAKER RECOGNITION METHOD AND APPARATUS THEREOF 审中-公开
标题翻译：在线扬声器识别方法及其设备
公开(公告)号：US20080065380A1
公开(公告)日：2008-03-13
申请号：US11684691
申请日：2007-03-12
申请人： Keun Chang KWAK , Kyung Sook BAE , Ho Sub YOON , Hye Jin KIM , Su Young CHI
发明人： Keun Chang KWAK , Kyung Sook BAE , Ho Sub YOON , Hye Jin KIM , Su Young CHI
IPC分类号： G10L15/00
CPC分类号： G10L17/04
摘要： A speaker recognition method and apparatus are provided. In the speaker recognition method, basic data and voice data of a speaker are received using contents that constantly request the speaker to constantly response using the speaker's voice. Then, a voice of the speaker is extracted from voice data, and a feature vector for recognition is extracted from the voice of the speaker. Based on the extracted feature vector, a speaker model is created. Then, a speaker stored in a speaker model is recognized based on information analyzed from input voice.
摘要翻译：提供说话人识别方法和装置。在扬声器识别方法中，使用不断要求扬声器的内容使用扬声器的声音来不断响应地接收扬声器的基本数据和语音数据。然后，从语音数据中提取说话者的声音，并且从扬声器的声音中提取用于识别的特征矢量。基于提取的特征向量，创建说话者模型。然后，基于从输入语音分析的信息来识别存储在扬声器模型中的扬声器。

36. 发明授权

US07338825B2 Structure for optical device and method of fabricating the same 失效
标题翻译：光学装置的结构及其制造方法
公开(公告)号：US07338825B2
公开(公告)日：2008-03-04
申请号：US11190284
申请日：2005-07-26
申请人： Sang Hyeob Kim , Ki Chul Kim , Hye Jin Kim
发明人： Sang Hyeob Kim , Ki Chul Kim , Hye Jin Kim
IPC分类号： H01L21/00
CPC分类号： G11B7/26 , B82Y10/00 , G11B7/00454 , G11B7/00455 , G11B7/0052 , G11B7/1275 , H01L2933/0091
摘要： Provided are a structure for an optical device and method of fabricating the same. The structure includes: a light scattering layer producing nanoparticles due to externally provided thermal energy; a protective layer protecting the light scattering layer; and a capping layer disposed between the light scattering layer and the protective layer. As the light scattering layer is formed of nitride-oxide, an energy gap is increased to make the structure suitable for a high-speed electronic circuit, and a desired stoichiometric ratio can be easily obtained. Also, the capping layer prevents crystalline mismatch, thus the non-uniformity of elements is inhibited to maintain a stoichiometric state. As a result, a high-integrated high-speed electronic circuit, which is excellent in uniformity and reproducibility, can be easily embodied.
摘要翻译：提供了一种用于光学器件的结构及其制造方法。该结构包括：由外部提供的热能产生纳米颗粒的光散射层; 保护光散射层的保护层; 以及设置在光散射层和保护层之间的覆盖层。由于光散射层由氮化物氧化物形成，因此能量间隙增大，使得该结构适合于高速电子电路，并且可以容易地获得所需的化学计量比。此外，封盖层防止晶体失配，因此元件的不均匀性被抑制以维持化学计量状态。结果，可以容易地实现均匀性和再现性优异的高集成度高速电子电路。

37. 发明申请

US20080037875A1 METHOD AND APPARATUS FOR SHOULDER-LINE DETECTION AND GESTURE SPOTTING DETECTION 有权
标题翻译：方法和装置用于肩部线检测和姿势检测
公开(公告)号：US20080037875A1
公开(公告)日：2008-02-14
申请号：US11673696
申请日：2007-02-12
申请人： Hye Jin KIM , Ho Sub YOON , Do Hyung KIM , Jae Yeon LEE
发明人： Hye Jin KIM , Ho Sub YOON , Do Hyung KIM , Jae Yeon LEE
IPC分类号： G06K9/48
CPC分类号： G06K9/00335
摘要： A gesture spotting detection method and apparatus employ a shoulder-line algorithm. The shoulder-line detecting method recognizes a GSD calling gesture that occurs in a shoulder-line, head or higher part in a remote distance or a short distance, although a user does not have a fixed posture. In the method, an image of people is received, and skin information of a person in the image is detected to detect a face area. Then, the cloth color information of the person is modeled from the inputted image to detect a cloth area. An external space is defined from the image based on the body space area, and an edge is extracted from the image based on the body space and the external space. Then, shoulder-line information is acquired based on an energy function obtained based on the body space, the external space, and the edge.
摘要翻译：手势点检测方法和装置采用肩线算法。肩线检测方法识别在远程或短距离的肩线，头部或更高部分中发生的GSD呼叫手势，尽管用户不具有固定姿势。在该方法中，接收人的图像，并且检测图像中的人的皮肤信息以检测面部区域。然后，根据输入的图像对人的布颜色信息进行建模，以检测布面积。基于身体空间区域从图像中定义外部空间，并且基于身体空间和外部空间从图像提取边缘。然后，基于基于体空间，外部空间和边缘获得的能量函数来获取肩线信息。

38. 发明申请

US20070217273A1 PHASE-CHANGE RANDOM ACCESS MEMORY 有权
标题翻译：相变随机存取存储器
公开(公告)号：US20070217273A1
公开(公告)日：2007-09-20
申请号：US11616969
申请日：2006-12-28
申请人： Byung-Gil Choi , Du-Eung Kim , Woo-Yeong Cho , Hye-Jin Kim
发明人： Byung-Gil Choi , Du-Eung Kim , Woo-Yeong Cho , Hye-Jin Kim
IPC分类号： G11C29/00
CPC分类号： G11C29/808 , G11C29/02 , G11C29/027 , G11C29/787 , G11C29/804 , G11C29/846
摘要： A phase-change random access memory includes a memory block including a plurality of memory columns corresponding to the same column address and using different input/output paths; a redundancy memory block including a plurality of redundancy memory columns using different input/output paths; and an input/output controller repairing at least one of the plurality of memory columns using at least one of the plurality of redundancy memory columns, and controlling the number of memory columns simultaneously repaired using redundancy memory columns in response to an input/output repair mode control signal.
摘要翻译：相变随机存取存储器包括存储块，该存储块包括对应于同一列地址的多个存储器列并使用不同的输入/输出路径; 冗余存储器块，其包括使用不同的输入/输出路径的多个冗余存储器列; 以及输入/输出控制器，其使用所述多个冗余存储器列中的至少一个来修复所述多个存储器列中的至少一个，并且响应于输入/输出修复模式来控制使用冗余存储器列同时修复的存储器列的数量控制信号。

39. 发明授权

US09640286B2 Passive cooling apparatus of spent fuel pool 有权
公开(公告)号：US09640286B2
公开(公告)日：2017-05-02
申请号：US13593115
申请日：2012-08-23
申请人： Sang Jong Lee , Geol Woo Lee , Young Baek Kim , Jae Don Choi , Jae Il Lee , Sung Ju Cho , Jung Seon An , Dong Kyu Lee , Hye Jin Kim , Dong Uk Choi
发明人： Sang Jong Lee , Geol Woo Lee , Young Baek Kim , Jae Don Choi , Jae Il Lee , Sung Ju Cho , Jung Seon An , Dong Kyu Lee , Hye Jin Kim , Dong Uk Choi
IPC分类号： G21C19/07 , G21C15/18 , G21D1/04 , G21D3/04 , G21C15/24
CPC分类号： G21C19/07 , G21C15/18 , G21C15/24 , G21D1/04 , G21D3/04 , Y02E30/40
摘要： An apparatus for cooling a spent fuel pool having a heat exchanger includes a cooling water pool positioned above the spent fuel pool; a floating device configured to be elevated according to a water level of a cooling water in the spent fuel pool; and an emergency cooling water supply pipe configured to form a path through which the cooling water of the cooling water pool is moved to the spent fuel pool and configured to include a floating valve that opens or closes a flow passage of the cooling water in connection with the elevation of the floating device.

40. 发明授权

US09496216B2 Semiconductor package including stacked semiconductor chips and a redistribution layer 有权
标题翻译：包括堆叠半导体芯片和再分配层的半导体封装
公开(公告)号：US09496216B2
公开(公告)日：2016-11-15
申请号：US13725132
申请日：2012-12-21
申请人： Sung-Hoon Chun , Hye-Jin Kim , Sang-Ho An , Kyung-Man Kim , Seok-Chan Lee
发明人： Sung-Hoon Chun , Hye-Jin Kim , Sang-Ho An , Kyung-Man Kim , Seok-Chan Lee
IPC分类号： H01L21/02 , H01L23/50 , H01L25/065 , H01L25/18 , H01L23/522 , H01L49/02 , H01L23/00 , H01L23/525
CPC分类号： H01L23/50 , H01L23/5223 , H01L23/525 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L28/40 , H01L2224/02166 , H01L2224/02375 , H01L2224/02381 , H01L2224/0401 , H01L2224/04042 , H01L2224/05548 , H01L2224/05553 , H01L2224/05554 , H01L2224/05567 , H01L2224/06102 , H01L2224/06135 , H01L2224/131 , H01L2224/16135 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48145 , H01L2224/48147 , H01L2224/48195 , H01L2224/48227 , H01L2224/48463 , H01L2224/48465 , H01L2224/49109 , H01L2224/49171 , H01L2224/49175 , H01L2224/49177 , H01L2224/73207 , H01L2224/73265 , H01L2225/06506 , H01L2225/0651 , H01L2225/06527 , H01L2225/06562 , H01L2924/00014 , H01L2924/1431 , H01L2924/1434 , H01L2924/15184 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/19105 , H01L2924/00012 , H01L2924/00 , H01L2924/014 , H01L2224/05552
摘要： Semiconductor packages including stacked semiconductor chips are provided. The semiconductor packages may include first semiconductor chips and a second semiconductor chip that are stacked sequentially on a board. The semiconductor packages may also include a wiring layer on the memory chips and the wiring layer may include redistribution patterns and redistribution pads. Each of the memory chips may include a data pad. The data pads of the first semiconductor chips may be electrically connected to the board via the second semiconductor chip, some of redistribution patterns, and some of redistribution pads.
摘要翻译：提供包括堆叠半导体芯片的半导体封装。半导体封装可以包括顺序堆叠在板上的第一半导体芯片和第二半导体芯片。半导体封装还可以包括存储器芯片上的布线层，并且布线层可以包括再分配图案和再分布垫。每个存储器芯片可以包括数据焊盘。第一半导体芯片的数据焊盘可以经由第二半导体芯片电连接到板，一些再分布图案和一些再分布焊盘。

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