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31. 发明申请

US20140138346A1 PROCESS INTEGRATION OF A SINGLE CHIP THREE AXIS MAGNETIC FIELD SENSOR 有权
标题翻译：单芯片三轴磁场传感器的工艺集成
公开(公告)号：US20140138346A1
公开(公告)日：2014-05-22
申请号：US13972637
申请日：2013-08-21
申请人： EverSpin Technologies, Inc.
发明人： Renu Whig , Philip Mather , Kenneth Smith , Sanjeev Aggarwal , Jon Slaughter , Nicholas Rizzo
IPC分类号： H01L43/12 , G01R33/09
CPC分类号： H01L43/12 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08
摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
摘要翻译：半导体工艺集成了三个桥接电路，每个电路包括在单个芯片上作为惠斯登电桥耦合的磁阻传感器，以在三个正交方向上感测磁场。该过程包括形成磁阻传感器的各种沉积和蚀刻步骤以及在三个桥接电路中的一个上的多个通量引导器，用于将“Z”轴磁场传送到在XY平面中定向的传感器上。

32. 发明授权

US08647891B2 Two-axis magnetic field sensor having reduced compensation angle for zero offset 有权
标题翻译：两轴磁场传感器具有减小零偏移的补偿角
公开(公告)号：US08647891B2
公开(公告)日：2014-02-11
申请号：US13909622
申请日：2013-06-04
申请人： Everspin Technologies, Inc.
发明人： Jijun Sun , Phillip Mather , Srinivas Pietambaram , Jon Slaughter , Renu Whig , Nicholas Rizzo
IPC分类号： H01L21/00
CPC分类号： H01L43/10 , G01R33/098 , H01L43/12 , Y10T29/49117
摘要： A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.
摘要翻译：提供传感器和制造工艺，用于形成具有基本上正交的磁化方向的参考层，具有零偏移并具有小的补偿角。示例性实施例包括基于磁阻薄膜的磁场传感器的传感器层堆叠，传感器层堆叠包括钉扎层; 包括在钉扎层上的无定形材料层的钉扎层和在非晶材料层上的第一层结晶材料; 在被钉扎层上的非磁性耦合层; 在非磁耦合层上的固定层; 固定层上的隧道势垒; 以及在非磁性中间层上的感测层。另一个实施例包括传感器层堆叠，其中包括由非晶层隔开的两个结晶层的钉扎层。

33. 发明授权

US10692926B2 Magnetoresistive stack with seed region and method of manufacturing the same 有权
公开(公告)号：US10692926B2
公开(公告)日：2020-06-23
申请号：US16601848
申请日：2019-10-15
申请人： Everspin Technologies, Inc.
发明人： Jijun Sun , Sanjeev Aggarwal , Han-Jong Chia , Jon M. Slaughter , Renu Whig
IPC分类号： H01L27/22 , H01L43/02 , H01L43/08 , G11C11/16 , H01L43/12 , G11B5/39 , H01L43/10
摘要： A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).

34. 发明授权

US10516103B1 Magnetoresistive stack and method of fabricating same 有权
公开(公告)号：US10516103B1
公开(公告)日：2019-12-24
申请号：US16551952
申请日：2019-08-27
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L21/00 , H01L43/12 , G11C11/16 , H01L43/08 , H01L43/02 , H01L43/10
摘要： A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

35. 发明申请

US20190131519A1 MAGNETORESISTIVE STACKS AND METHODS THEREFOR 审中-公开
公开(公告)号：US20190131519A1
公开(公告)日：2019-05-02
申请号：US16179112
申请日：2018-11-02
申请人： Everspin Technologies Inc.
发明人： Sumio Ikegawa , Jon Slaughter , Renu Whig
IPC分类号： H01L43/10 , H01L43/02 , H01F10/32 , H01L27/22 , H01L43/12 , H01F41/32 , G11C11/16
摘要： A magnetoresistive stack includes a seed region formed above a base region, a fixed magnetic region formed above the seed region and an intermediate region positioned between the fixed magnetic region and a free magnetic region. The base region may be formed of a material having a lower standard free energy of oxidation than iron.

36. 发明授权

US10276789B2 Methods of manufacturing a magnetic field sensor 有权
公开(公告)号：US10276789B2
公开(公告)日：2019-04-30
申请号：US15860914
申请日：2018-01-03
申请人： EVERSPIN TECHNOLOGIES, INC.
发明人： Renu Whig , Phillip Mather , Kenneth Smith , Sanjeev Aggarwal , Jon Slaughter , Nicholas Rizzo
IPC分类号： H01L43/12 , B82Y25/00 , G01R33/00 , G01R33/09 , H01L27/22 , H01L43/08 , H01L43/02
摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

37. 发明申请

US20190123098A1 MAGNETORESISTIVE STACK WITH SEED REGION AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20190123098A1
公开(公告)日：2019-04-25
申请号：US16195178
申请日：2018-11-19
申请人： Everspin Technologies, Inc.
发明人： Jijun SUN , Sanjeev Aggarwal , Han-Jong Chia , Jon M. Slaughter , Renu Whig
IPC分类号： H01L27/22 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , G11B5/39 , G11C11/16
摘要： A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).

38. 发明授权

US10141498B2 Magnetoresistive stack, seed region thereof and method of manufacturing same 有权
公开(公告)号：US10141498B2
公开(公告)日：2018-11-27
申请号：US15373880
申请日：2016-12-09
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jon M. Slaughter , Han-Jong Chia
IPC分类号： H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).

39. 发明授权

US09947865B2 Magnetoresistive stack and method of fabricating same 有权
公开(公告)号：US09947865B2
公开(公告)日：2018-04-17
申请号：US15400889
申请日：2017-01-06
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L21/8234 , H01L43/12 , H01L43/08 , H01L43/10 , H01L43/02 , G11C11/16
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

40. 发明授权

US09640753B2 Magnetic field sensor 有权
公开(公告)号：US09640753B2
公开(公告)日：2017-05-02
申请号：US14168095
申请日：2014-01-30
申请人： EVERSPIN TECHNOLOGIES, INC.
发明人： Jijun Sun , Phillip Mather , Srinivas Pietambaram , Jon Slaughter , Renu Whig , Nicholas Rizzo
IPC分类号： G01R33/06 , H01L43/10 , G01R33/09 , H01L43/12
CPC分类号： H01L43/10 , G01R33/098 , H01L43/12 , Y10T29/49117
摘要： A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.

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