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    • 31. 发明授权
    • System for adjusting bias of relative magnetizations of ferromagnetic layers in a magnetoresistive sensor
    • 用于调整磁阻传感器中铁磁层的相对磁化偏压的系统
    • US09378761B1
    • 2016-06-28
    • US14693009
    • 2015-04-22
    • HGST Netherlands B.V.
    • David John Seagle
    • G11B5/39G11B5/00
    • G11B5/3932G11B5/3909G11B5/3954G11B2005/0018G11B2005/3996
    • A magnetoresistive sensing system includes a current-perpendicular-to-the-plane magnetoresistive (CPP-MR) read head and adjustable biasing circuitry connected to the read head for adjusting the relative magnetizations of one or more of the ferromagnetic layers in the read head. The biasing circuitry generates a bias current in the read head that generates a bias-adjusting magnetic field that acts on one or more of the ferromagnetic layers. For a conventional read head, the bias-adjusting field acts orthogonal to the field from the reference layer to change the angle between the magnetization of the free layer and the magnetization of the reference layer. For a scissoring-type read head, the bias-adjusting field acts parallel to the transverse bias field to change the angle between the magnetizations of the two free layers. This results in an improvement in the sensitivity of the read head to bring the soft error rate (SER) below an acceptable level.
    • 磁阻感测系统包括电流垂直于平面的磁阻(CPP-MR)读头和连接到读头的可调偏置电路,用于调节读头中一个或多个铁磁层的相对磁化。 偏置电路在读取头中产生偏置电流,其产生作用在一个或多个铁磁层上的偏置调整磁场。 对于传统的读取头,偏置调整场与来自参考层的场正交地作用,以改变自由层的磁化和参考层的磁化之间的角度。 对于剪切式读取头,偏置调整场平行于横向偏置场起作用以改变两个自由层的磁化之间的角度。 这导致读头的灵敏度提高,使软误码率(SER)低于可接受的水平。
    • 32. 发明授权
    • Fast secure erase in a flash system
    • 在闪存系统中快速安全擦除
    • US09368218B2
    • 2016-06-14
    • US14506488
    • 2014-10-03
    • HGST Netherlands B.V.
    • Pablo A. Ziperovich
    • G11C16/10G11C16/14G11C16/34
    • G11C16/16G11C11/5635G11C16/12G11C16/14G11C16/3445
    • A flash memory controller is configured to provide a first erase mode for erasing one or more groups of flash memory cells in a flash memory device using a plurality of erase pulses and a second erase mode for erasing the one or more groups of flash memory cells using a single erase pulse. The controller may receive a fast erase signal to erase the one or more groups of flash memory cells and, in response to the signal, switch operating parameters of the flash memory device from first parameters corresponding to the first erase mode to second parameters corresponding to the second erase mode, and instruct the flash memory device to perform an erase operation on the one or more groups of flash memory cells according to the second parameters. The controller may then verify that the erase operation was completed using the single erase pulse.
    • 闪速存储器控制器被配置为提供第一擦除模式,用于使用多个擦除脉冲擦除闪存器件中的一组或多组闪速存储器单元,以及第二擦除模式,用于擦除一组或多组闪存单元, 单个擦除脉冲。 控制器可以接收快速擦除信号以擦除一组或多组闪速存储器单元,并且响应于该信号,从对应于第一擦除模式的第一参数切换闪速存储器件的操作参数到对应于第一擦除模式的第二参数 第二擦除模式,并且根据第二参数指示闪速存储器件对一组或多组闪存单元执行擦除操作。 然后,控制器可以使用单个擦除脉冲来验证擦除操作是否完成。
    • 37. 发明授权
    • Extended spin torque oscillator
    • 扩展自旋扭矩振荡器
    • US09336797B2
    • 2016-05-10
    • US14290768
    • 2014-05-29
    • HGST Netherlands B.V.
    • Masukazu IgarashiMasato MatsubaraKeiichi NagasakaYo SatoMasato ShiimotoMasashige Sato
    • G11B5/00G11B5/127
    • G11B5/00G11B5/1278G11B5/23G11B5/235G11B5/3146G11B2005/0024
    • The present disclosure generally relates to a high-frequency oscillator for use in a recording device having a microwave-assisted magnetic recording head. The microwave-assisted magnetic recording head achieves a large assist effect by using an extended spin torque oscillator disposed between a main magnetic pole and a pole opposite the main magnetic pole. The spin torque oscillator obtains a strong high-frequency magnetic field and comprises a first non-magnetic spin scatterer, a reference layer, a first non-magnetic spin transfer layer, a first magnetic field generating layer, a second non-magnetic spin transfer layer, a second magnetic field generating layer, and a second non-magnetic spin scatterer. The spin torque oscillator has a drive current flowing though in the direction from the first magnetic field generating layer to the reference layer.
    • 本公开总体上涉及用于具有微波辅助磁记录头的记录装置中的高频振荡器。 微波辅助磁记录头通过使用设置在主磁极和与主磁极相对的极之间的扩展旋转扭矩振荡器来实现大的辅助效果。 旋转扭矩振荡器获得强的高频磁场,并且包括第一非磁性旋转散射体,参考层,第一非磁性自旋转移层,第一磁场产生层,第二非磁性自旋转移层 ,第二磁场产生层和第二非磁性旋转散射体。 自旋转矩振荡器具有沿着从第一磁场产生层到参考层的方向流动的驱动电流。