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1. 发明申请

US20160035377A1 SPIN-VALVE ELEMENT, HARD DISK HEAD, AND HARD DISK HEAD ASSEMBLY 有权
标题翻译：旋转阀元件，硬盘头和硬盘头组件
公开(公告)号：US20160035377A1
公开(公告)日：2016-02-04
申请号：US14802114
申请日：2015-07-17
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yuuzo KAMIGUCHI , Masayuki TAKAGISHI , Hitoshi IWASAKI
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G11B5/127 , G11B5/33 , G11B5/3932 , G11B5/398 , G11B2005/0005
摘要： According to one embodiment, a spin-valve element includes a nonmagnetic unit, a first magnetic unit, a second magnetic unit, a third magnetic unit, a current source, and a voltage sensor. The current source is connected to the second magnetic unit and the third magnetic unit. The current source causes a current to flow between the second magnetic unit and the third magnetic unit via the nonmagnetic unit. The voltage sensor is connected to the second magnetic unit and the third magnetic unit. A maximum length of a contact surface between the first magnetic unit and the nonmagnetic unit is not more than a spin diffusion length of the nonmagnetic unit. A length of the first magnetic unit in a direction orthogonal to the contact surface is not more than 3 times a spin diffusion length of the first magnetic unit. The first magnetic unit does not contact an external electrode.
摘要翻译：根据一个实施例，自旋阀元件包括非磁性单元，第一磁性单元，第二磁性单元，第三磁性单元，电流源和电压传感器。电流源连接到第二磁性单元和第三磁性单元。电流源导致电流经由非磁性单元在第二磁性单元和第三磁性单元之间流动。电压传感器连接到第二磁性单元和第三磁性单元。第一磁性单元与非磁性单元之间的接触表面的最大长度不大于非磁性单元的自旋扩散长度。第一磁性单元在与接触面正交的方向上的长度不大于第一磁性单元的自旋扩散长度的3倍。第一磁性单元不接触外部电极。

2. 发明授权

US09177573B1 Tunneling magnetoresistive (TMR) device with magnesium oxide tunneling barrier layer and free layer having insertion layer 有权
标题翻译：具有氧化镁隧道势垒层和具有插入层的自由层的隧道磁阻（TMR）器件
公开(公告)号：US09177573B1
公开(公告)日：2015-11-03
申请号：US14701050
申请日：2015-04-30
申请人： HGST Netherlands B.V.
发明人： Sangmun Oh , Zheng Gao
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , G01R33/098 , G11B5/33 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A tunneling magnetoresistance (TMR) device has a thin MgO tunneling barrier layer and a free ferromagnetic multilayer. The free ferromagnetic multilayer includes a CoFeB first ferromagnetic layer, a face-centered-cubic (fcc) NiFe compensation layer with negative magnetostriction, and a body-centered-cubic (bcc) NiFe insertion layer between the CoFeB layer and the fcc NiFe compensation layer. An optional ferromagnetic nanolayer may be located between the MgO barrier layer and the CoFeB layer. An optional amorphous separation layer may be located between the CoFeB layer and the bcc NiFe insertion layer. The bcc NiFe insertion layer (and the optional amorphous separation layer if it is used) prevents the fcc NiFe layer from adversely affecting the crystalline formation of the MgO and CoFeB layers during annealing. The bcc NiFe insertion layer also increases the TMR and lowers the Gilbert damping constant of the free ferromagnetic multilayer.
摘要翻译：隧道磁阻（TMR）器件具有薄的MgO隧道势垒层和自由的铁磁性多层。自由铁磁性多层包括CoFeB层和fcc NiFe补偿层之间的CoFeB第一铁磁层，具有负磁致伸缩的面心立方（fcc）NiFe补偿层和体心立方（bcc）NiFe插入层。可选的铁磁纳米层可以位于MgO阻挡层和CoFeB层之间。可选的非晶分离层可以位于CoFeB层和bcc NiFe插入层之间。 bcc NiFe插入层（以及任选的非晶分离层，如果使用）防止了fcc NiFe层对退火过程中的MgO和CoFeB层的结晶形成产生不利影响。 bcc NiFe插入层也增加了TMR，降低了自由铁磁多层的吉尔伯特阻尼常数。

3. 发明授权

US09117475B2 Lubricant composition and use thereof 有权
标题翻译：润滑剂组合物及其用途
公开(公告)号：US09117475B2
公开(公告)日：2015-08-25
申请号：US13260155
申请日：2010-03-24
申请人： Hiyoku Nakata , Akiko Hattori , Atsushi Tatsugawa , Ken Kawata
发明人： Hiyoku Nakata , Akiko Hattori , Atsushi Tatsugawa , Ken Kawata
IPC分类号： C10M105/50 , G11B5/725 , C10M147/04 , C07C43/225 , C07C43/23 , C07D251/70 , C07D401/14 , C07D403/14 , C07D405/14 , C07D409/14 , C07D413/12 , C07D417/12 , C10M105/70 , C10M105/72 , C10M133/42 , C23C16/44 , B32B9/00 , C10M147/00 , B05D3/12 , G11B5/65 , C10M107/38 , G11B5/33 , C07D251/54 , B05D1/18 , C07D225/00
CPC分类号： G11B5/725 , B05D1/18 , B05D3/12 , B32B9/00 , C07C43/225 , C07C43/23 , C07D225/00 , C07D251/54 , C07D251/70 , C07D401/14 , C07D403/14 , C07D405/14 , C07D409/14 , C07D413/12 , C07D417/12 , C10M105/70 , C10M105/72 , C10M107/38 , C10M133/42 , C10M147/00 , C10M147/04 , C10M2211/04 , C10M2213/04 , C10M2213/06 , C10M2215/222 , C10M2215/2225 , C10M2223/083 , C10N2240/204 , C23C16/44 , G11B5/33 , G11B5/65 , Y10T428/11 , Y10T428/30
摘要： [Problem] Provided is a novel lubricant composition that is useful as a material of a lubricating layer of a magnetic recording medium.[Means for Resolution] The lubricant composition contains at least one kind of compound represented by the following Formula (1). In the formula, X represents a cyclic group that may be substituted, and Y represents a single bond or a linking group having a valency of 2 or more. Here, at least one of X and Y includes 1 or more polar groups such as a hydroxyl group; Z represents a linking group having a valency of 2 or more and constituted with a carbon atom (C), a fluorine atom (F), and 1 or 2 kinds of arbitrary atoms (here, a hydrogen atom is excluded); n represents a real number of 1 to 10; m represents a real number of 0 to 1; and s and t independently represent a real number of 1 or greater. XYZ—CnF2n+1−mHm]s]t (1)
摘要翻译： [问题]提供了可用作磁记录介质的润滑层的材料的新型润滑剂组合物。 [解决方法]润滑剂组合物含有由下式（1）表示的至少一种化合物。在该式中，X表示可被取代的环状基团，Y表示单键或2价以上的连接基。这里，X和Y中的至少一个包括1个或更多个极性基团，例如羟基; Z表示由碳原子（C），氟原子（F）和1或2种任意原子构成的化合价为2以上的连接基（这里不排除氢原子）。 n表示1〜10的实数; m表示0到1的实数; s和t独立地表示1或更大的实数。 XYZ-CnF2n + 1-mHm] s] t（1）

4. 发明授权

US09087525B2 Layered synthetic anti-ferromagnetic upper shield 有权
标题翻译：分层合成反铁磁上护罩
公开(公告)号：US09087525B2
公开(公告)日：2015-07-21
申请号：US14067456
申请日：2013-10-30
申请人： Seagate Technology LLC
发明人： Zhengqi Lu , Daniel Hassett , Paula McElhinney , Jiansheng Xu
IPC分类号： G11B5/11 , G11B5/33
CPC分类号： G11B5/11 , G11B5/33 , G11B5/3909 , G11B5/3912 , G11B2005/3996
摘要： A magneto-resistive (MR) sensor may include a variety of individual functional layers whereby an electrical resistance throughout the layers of the sensor stack varies according to the polarity of a pinned layer within the sensor stack. A layered synthetic anti-ferromagnetic (SAF) upper shield of the MR sensor includes an upper SAF layer and a lower SAF layer separated by a shield anti-ferromagnetic (AFM) layer. The lower SAF layer is in contact with a side shield of the MR sensor, which provides a side shield biasing field to the MR sensor. The upper SAF layer separates the lower SAF layer from a top shield and/or domain control structure (DCS) magnet(s) of the MR sensor and shields the lower SAF layer and the sensor stack from DCS stray field(s), thereby reducing noise.
摘要翻译：磁阻（MR）传感器可以包括各种单独的功能层，由此传感器堆叠的各层的电阻根据传感器堆叠内的被钉扎层的极性而变化。 MR传感器的分层合成反铁磁（SAF）上屏蔽包括由屏蔽反铁磁（AFM）层隔开的上SAF层和下SAF层。较低的SAF层与MR传感器的侧屏蔽接触，其向MR传感器提供侧屏偏置场。上部SAF层将下部SAF层与MR传感器的顶部屏蔽和/或域控制结构（DCS）磁体分开，并将下部SAF层和传感器堆叠屏蔽到DCS杂散场，从而减少噪声。

5. 发明申请

US20140287267A1 TMR Device with Novel Free Layer 审中-公开
标题翻译：具有新型自由层的TMR设备
公开(公告)号：US20140287267A1
公开(公告)日：2014-09-25
申请号：US14297698
申请日：2014-06-06
申请人： Headway Technologies, Inc.
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/33 , G11B5/3929 , G11B2005/3996 , Y10T428/1114
摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (
摘要翻译：公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。

6. 发明授权

US08315014B2 Perpendicular magnetic recording head and method of manufacturing the same 失效
标题翻译：垂直磁记录头及其制造方法
公开(公告)号：US08315014B2
公开(公告)日：2012-11-20
申请号：US12123492
申请日：2008-05-20
申请人： Joo-ho Lee , Kook-hyun Sunwoo , Eun-sik Kim , Kyoung-won Na , Sang-hun Lee
发明人： Joo-ho Lee , Kook-hyun Sunwoo , Eun-sik Kim , Kyoung-won Na , Sang-hun Lee
IPC分类号： G11B5/127
CPC分类号： G11B5/33 , G11B5/1278 , G11B5/17 , G11B5/3116 , G11B5/3123 , G11B5/3163
摘要： Provided are a perpendicular magnetic recording head and a method of manufacturing the same. The perpendicular magnetic recording head includes a main pole including a pole tip applying a recording magnetic field to a recording medium, a coil surrounding the main pole in a solenoid shape such that recording magnetic field for recording information to a recording medium is generated at the pole tip, and a return yoke forming a magnetic path for the recording magnetic field together with the main pole and surrounding a portion of the coil passing above the main pole. The number of times that the coil passes above the main pole is smaller than the number of times that the coil passes below the main pole.
摘要翻译：提供一种垂直磁记录头及其制造方法。垂直磁记录头包括：主极，其包括向记录介质施加记录磁场的极尖;围绕主极的螺线管形状的线圈，以便在磁极处产生记录信息到记录介质的磁场尖端和返回磁轭与主极一起形成用于记录磁场的磁路并围绕通过主极上方的线圈的一部分。线圈通过主极以上的次数小于线圈通过主极以下的次数。

7. 发明授权

US07692897B2 Grounded writer core 有权
标题翻译：地面作家核心
公开(公告)号：US07692897B2
公开(公告)日：2010-04-06
申请号：US12048306
申请日：2008-03-14
申请人： Harry S. Edelman , Bradley H. Miller , Eric L. Granstrom
发明人： Harry S. Edelman , Bradley H. Miller , Eric L. Granstrom
IPC分类号： G11B5/39 , G11B5/40
CPC分类号： G11B5/33 , G11B5/127 , G11B5/3909 , G11B5/3967 , G11B5/40 , G11B2005/3996
摘要： A transducing head includes a substrate, a writer positioned upon the substrate, and a reader positioned adjacent the writer. The writer is in electrical contact with the substrate.
摘要翻译：转换头包括基板，位于基板上的写入器和位于写入器附近的读取器。作者与基板电接触。

8. 发明授权

US07606006B2 Magnetic recording head and magnetic disk storage apparatus mounting the magnetic head 失效
标题翻译：安装磁头的磁记录头和磁盘存储装置
公开(公告)号：US07606006B2
公开(公告)日：2009-10-20
申请号：US11014025
申请日：2004-12-15
申请人： Masafumi Mochizuki , Kaori Suzuki , Kimitoshi Etoh
发明人： Masafumi Mochizuki , Kaori Suzuki , Kimitoshi Etoh
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/127 , G11B5/33
摘要： Embodiments of the invention provide a write head for perpendicular recording in which the magnetic field intensity applied at a read element is reduced with larger write-field gradients and the distance between a write element and a read element is small. In one embodiment, a pair of magnetic bodies for shielding a read element are provided on the leading and trailing sides of the read element respectively and whichever one of the two shields is the longer in the length from the air bearing surface is shorter than the length up to the back contact position PBK at which a main pole and an auxiliary pole are connected.
摘要翻译：本发明的实施例提供了用于垂直记录的写入头，其中在读取元件处施加的磁场强度随着更大的写入场梯度而减小，并且写入元件和读取元件之间的距离小。在一个实施例中，用于屏蔽读取元件的一对磁体分别设置在读取元件的前侧和后侧，并且两个屏蔽中的任一个在距空气支承表面的长度上较长的长度短于长度直到连接主极和辅助极的后接触位置PBK。

9. 发明申请

US20090116144A1 PERPENDICULAR MAGNETIC RECORDING HEAD AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：全能磁记录头及其制造方法
公开(公告)号：US20090116144A1
公开(公告)日：2009-05-07
申请号：US12123492
申请日：2008-05-20
申请人： Joo-ho LEE , Kook-hyun Sunwoo , Eun-sik Kim , Kyoung-won Na , Sang-hun Lee
发明人： Joo-ho LEE , Kook-hyun Sunwoo , Eun-sik Kim , Kyoung-won Na , Sang-hun Lee
IPC分类号： G11B5/33
CPC分类号： G11B5/33 , G11B5/1278 , G11B5/17 , G11B5/3116 , G11B5/3123 , G11B5/3163
摘要： Provided are a perpendicular magnetic recording head and a method of manufacturing the same. The perpendicular magnetic recording head includes a main pole including a pole tip applying a recording magnetic field to a recording medium, a coil surrounding the main pole in a solenoid shape such that recording magnetic field for recording information to a recording medium is generated at the pole tip, and a return yoke forming a magnetic path for the recording magnetic field together with the main pole and surrounding a portion of the coil passing above the main pole. The number of times that the coil passes above the main pole is smaller than the number of times that the coil passes below the main pole.
摘要翻译：提供一种垂直磁记录头及其制造方法。垂直磁记录头包括：主极，其包括向记录介质施加记录磁场的极尖;围绕主极的螺线管形状的线圈，以便在磁极处产生记录信息到记录介质的磁场尖端和返回磁轭与主极一起形成用于记录磁场的磁路并围绕通过主极上方的线圈的一部分。线圈通过主极以上的次数小于线圈通过主极以下的次数。

10. 发明授权

US07522387B2 Thin film magnetic head and fabrication process for preventing short-circuit failure in a narrow track width and narrow gap length 失效
标题翻译：薄膜磁头和制造工艺，用于防止窄轨道宽度和窄间隙长度的短路故障
公开(公告)号：US07522387B2
公开(公告)日：2009-04-21
申请号：US11183037
申请日：2005-07-15
申请人： Nobuo Yoshida
发明人： Nobuo Yoshida
IPC分类号： G11B5/39 , G11B5/11
CPC分类号： G11B5/33 , G11B5/127
摘要： Embodiments of the invention relate to preventing short-circuit failure even in the narrow track width and narrow gap length, resulting in improved yield. In one embodiment, die sensor heads are placed on both sides of the track direction of the sensor film. The sensor heads comprise the first insulating film with at least a part connected to the track direction wall surface of the sensor film and the third insulating film formed between the upper shield and the first insulating film, and have the relationship being Tw
摘要翻译：本发明的实施例涉及即使在窄轨道宽度和窄间隙长度中也能防止短路故障，从而提高产量。在一个实施例中，传感器头被放置在传感器膜的轨迹方向的两侧。传感器头包括第一绝缘膜，其至少一部分连接到传感器膜的轨道方向壁表面，并且第三绝缘膜形成在上屏蔽和第一绝缘膜之间，并且具有Tw

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