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    • 33. 发明授权
    • Method for forming MEMS variable capacitors
    • MEMS可变电容器的形成方法
    • US08658512B2
    • 2014-02-25
    • US13382335
    • 2010-07-01
    • Tom SterkenGeert AltenaMartijn GoedbloedRobert Puers
    • Tom SterkenGeert AltenaMartijn GoedbloedRobert Puers
    • H01L21/20
    • H01G5/011H01G5/18
    • A method for fabricating an out-of-plane variable overlap MEMS capacitor comprises: providing a substrate (40) comprising a first layer (41), a second layer (42), and a third layer (43) stacked on top of one another; and etching a plurality of first trenches (70) through the third layer (43), through the second layer (42), and into the first layer (41) using a single etching mask. Etching the plurality of first trenches (70) defines a plurality of first fingers (51) in the third layer (43) and a plurality of second fingers (52) in the first layer (41). By using a single mask, the process is self-aligned. The method further comprises removing the second layer (42) in a first region where the plurality of first trenches (70) are provided, thereby forming a spacing or gap between the plurality of first fingers (51) and the plurality of second fingers (52).
    • 一种用于制造面外可变重叠MEMS电容器的方法包括:提供包括第一层(41),第二层(42)和堆叠在彼此顶部的第三层(43)的衬底(40) ; 以及通过所述第三层(43)通过所述第二层(42)蚀刻多个第一沟槽(70),并使用单个蚀刻掩模蚀刻到所述第一层(41)中。 蚀刻多个第一沟槽(70)在第三层(43)中限定多个第一指状物(51)和第一层(41)中的多个第二指状物(52)。 通过使用单个掩模,该过程是自对准的。 该方法还包括在设置有多个第一沟槽(70)的第一区域中移除第二层(42),从而在多个第一指状物(51)和多个第二指状物(52)之间形成间隔或间隙 )。
    • 34. 发明申请
    • Method for Forming MEMS Variable Capacitors
    • MEMS可变电容器的形成方法
    • US20120171836A1
    • 2012-07-05
    • US13382335
    • 2010-07-01
    • Tom SterkenGeert AltenaMartijn GoedbloedRobert Puers
    • Tom SterkenGeert AltenaMartijn GoedbloedRobert Puers
    • H01L21/02
    • H01G5/011H01G5/18
    • A method for fabricating an out-of-plane variable overlap MEMS capacitor comprises: providing a substrate (40) comprising a first layer (41), a second layer (42), and a third layer (43) stacked on top of one another; and etching a plurality of first trenches (70) through the third layer (43), through the second layer (42), and into the first layer (41) using a single etching mask. Etching the plurality of first trenches (70) defines a plurality of first fingers (51) in the third layer (43) and a plurality of second fingers (52) in the first layer (41). By using a single mask, the process is self-aligned. The method further comprises removing the second layer (42) in a first region where the plurality of first trenches (70) are provided, thereby forming a spacing or gap between the plurality of first fingers (51) and the plurality of second fingers (52).
    • 一种用于制造面外可变重叠MEMS电容器的方法包括:提供包括第一层(41),第二层(42)和堆叠在彼此顶部的第三层(43)的衬底(40) ; 以及通过所述第三层(43)通过所述第二层(42)蚀刻多个第一沟槽(70),并使用单个蚀刻掩模蚀刻到所述第一层(41)中。 蚀刻多个第一沟槽(70)在第三层(43)中限定多个第一指状物(51)和第一层(41)中的多个第二指状物(52)。 通过使用单个掩模,该过程是自对准的。 该方法还包括在设置有多个第一沟槽(70)的第一区域中移除第二层(42),从而在多个第一指状物(51)和多个第二指状物(52)之间形成间隔或间隙 )。