专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US09793257B1 Electrostatic discharge protection device having an adjustable triggering threshold 有权
公开(公告)号：US09793257B1
公开(公告)日：2017-10-17
申请号：US15252964
申请日：2016-08-31
申请人： STMicroelectronics (Tours) SAS
发明人： Mathieu Rouviere , Arnaud Florence
IPC分类号： H01L27/02 , H01L27/06 , H01L29/866 , H01L49/02 , H01L23/31
CPC分类号： H01L27/0248 , H01L23/3114 , H01L27/0255 , H01L27/0676 , H01L28/40 , H01L29/866
摘要： An electrostatic discharge protection device includes first and second diodes series-connected between first and second connection terminals. A third connection terminal is coupled to a junction of the first and second diodes. A capacitor is connected in parallel with the first and second diodes between the first and second terminals.

32. 发明授权

US09774243B2 Power converter with inrush current limitation 有权
公开(公告)号：US09774243B2
公开(公告)日：2017-09-26
申请号：US14956660
申请日：2015-12-02
申请人： STMicroelectronics (Tours) SAS
发明人： Laurent Gonthier , Muriel Nina
IPC分类号： H02M7/19 , H02M1/32 , H02M1/36 , H02M7/06 , H02M7/12 , H02M7/162 , H02M7/515
CPC分类号： H02M1/32 , H02M1/36 , H02M7/062 , H02M7/125 , H02M7/162 , H02M7/515 , H02M2001/325
摘要： An AC/DC converter receives an AC voltage at a first terminal and a second terminal. A rectifying bridge has a first input terminal coupled via a resistive element to the first terminal and a second input terminal connected to the second terminal, with output terminals of the rectifying bridge coupled to third and fourth terminals of the converter for generating a DC voltage. A first controllable rectifying thyristor couples the first terminal to the third terminal and a second controllable rectifying thyristor couples the fourth terminal to the first terminal. The resistive element functions as an inrush protection device during a first phase when the thyristors are turned off. In a second phase, the thyristors are selectively actuated.

33. 发明申请

US20170110970A1 A RECTIFIER BRIDGE CIRCUIT, CORRESPONDING APPARATUS AND METHOD 有权
公开(公告)号：US20170110970A1
公开(公告)日：2017-04-20
申请号：US15157711
申请日：2016-05-18
申请人： STMicroelectronics S.r.l. , STMicroelectronics (Tours) SAS
发明人： Roberto Larosa , Giulio Zoppi , Laurent Gonthier
IPC分类号： H02M3/335 , H02M1/42 , H02M1/08
CPC分类号： H02M3/33507 , H02M1/08 , H02M1/081 , H02M1/36 , H02M1/42 , H02M7/062 , H02M7/125 , H02M2001/0006
摘要： A rectifier bridge circuit includes a first SCR/IGBT switch and a second SCR/IGBT switch coupled to a circuit input to receive an ac input voltage. The first and second SCR/IGBT switches are alternatively switchable to generate a rectified voltage at a circuit output. Control currents coupled to control terminals of the first and second SCR/IGBT switches are power supply sourced from an auxiliary dc source generated by rectifying the ac input voltage. The control currents are generated by current sources coupled between the auxiliary dc source and the control terminals of the first and second SCR/IGBT switches. The current sources are selectively activatable to produce gating currents for switching on and off the first and second SCR/IGBT switches. A controller unit is provided to control the current sources via level shifter circuits. The control implements progressive conduction time of the first and second SCR/IGBT switches so as to provide inrush current limitation.

34. 发明授权

US09541936B2 System for balancing the voltage of series-connected semiconductor elements 有权
标题翻译：用于平衡串联半导体元件的电压的系统
公开(公告)号：US09541936B2
公开(公告)日：2017-01-10
申请号：US14548386
申请日：2014-11-20
申请人： STMICROELECTRONICS (TOURS) SAS
发明人： Bertrand Rivet , David Jouve
IPC分类号： G05F1/10 , G05F1/613 , G05F1/46 , H03K17/10
CPC分类号： G05F1/613 , G05F1/468 , H03K17/102
摘要： A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.
摘要翻译：用于平衡与相同类型的其它半导体元件串联连接的半导体元件上的电压的电路可以包括比较器，其被配置为将表示半导体元件两端的电压的参考电压与可调整值的电阻元件进行比较，配置为由比较器控制。

35. 发明授权

US09537582B2 Galvanically-isolated data transmission device 有权
标题翻译：电隔离数据传输设备
公开(公告)号：US09537582B2
公开(公告)日：2017-01-03
申请号：US13675847
申请日：2012-11-13
申请人： STMicroelectronics (Tours) SAS , Universite Francois Rabelais
发明人： Sophie Ngo , Arnaud Florence , Daniel Alquier , Edgard Jeanne
IPC分类号： H04B1/02 , H04B11/00
CPC分类号： H04B11/00
摘要： A data transmission device includes a coder configured to code the data into a multifrequency signal. A first array of ultrasonic transducers with a vibrating membrane is disposed on a first surface of a wafer. The first array configured to convert the signal into a multifrequency acoustic signal propagating in the wafer. A second array of ultrasonic transducers is disposed on a second surface of the wafer. The second array includes at least two assemblies of vibrating membrane ultrasonic transducers having resonance frequencies equal to two different frequencies of the multifrequency signal.
摘要翻译：数据传输设备包括被配置为将数据编码为多频信号的编码器。具有振动膜的第一阵列超声换能器设置在晶片的第一表面上。第一阵列被配置为将信号转换成在晶片中传播的多频声信号。超声波换能器的第二阵列设置在晶片的第二表面上。第二阵列包括具有等于多频信号的两个不同频率的谐振频率的振动膜超声换能器的至少两个组件。

36. 发明授权

US09530875B2 High-voltage vertical power component 有权
公开(公告)号：US09530875B2
公开(公告)日：2016-12-27
申请号：US14990194
申请日：2016-01-07
申请人： STMicroelectronics (Tours) SAS , Universite Francois Rabelais
发明人： Samuel Menard , Gael Gautier
IPC分类号： H01L29/747 , H01L29/87 , H01L29/06 , H01L29/66
CPC分类号： H01L29/66386 , H01L21/2885 , H01L21/76202 , H01L29/0615 , H01L29/0619 , H01L29/0642 , H01L29/0649 , H01L29/0661 , H01L29/32 , H01L29/456 , H01L29/747 , H01L29/87
摘要： A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.

37. 发明申请

US20160329417A1 BIDIRECTIONAL POWER SWITCH 有权
标题翻译：双向功率开关
公开(公告)号：US20160329417A1
公开(公告)日：2016-11-10
申请号：US14957803
申请日：2015-12-03
申请人： STMicroelectronics (Tours) SAS
发明人： Yannick Hague
IPC分类号： H01L29/747 , H01L27/082 , H01L25/065 , H01L27/02
CPC分类号： H01L29/747 , H01L25/0652 , H01L25/072 , H01L27/0296 , H01L27/082 , H01L27/0823 , H01L29/1004 , H01L29/732 , H01L2224/06181 , H01L2224/48137
摘要： A switch includes three components. Each component includes a stack of three semiconductor regions of alternating conductivity types and a control region in a first of the three semiconductor regions having a type opposite to that of the first semiconductor region. The first semiconductor regions of the first and second components are of a same conductivity type and the first semiconductor regions of the first and third components are of opposite conductivity types. The first semiconductor region of the first component is connected to the control regions of the second and third components. The first semiconductor regions of the second and third components are connected to a first switch terminal, the third semiconductor regions of the first, second, and third components are connected to a second switch terminal, and the control region of the first component is connected to a third switch terminal.
摘要翻译：开关包括三个部件。每个部件包括具有交替导电类型的三个半导体区域的堆叠以及三个半导体区域中的第一个具有与第一半导体区域相反的类型的控制区域。第一和第二部件的第一半导体区域具有相同的导电类型，并且第一和第三部件的第一半导体区域具有相反的导电类型。第一部件的第一半导体区域连接到第二和第三部件的控制区域。第二和第三部件的第一半导体区域连接到第一开关端子，第一，第二和第三部件的第三半导体区域连接到第二开关端子，并且第一部件的控制区域连接到第三开关端子。

38. 发明申请

US20160294088A1 ELECTRICAL CONNECTOR 有权
标题翻译：电气连接器
公开(公告)号：US20160294088A1
公开(公告)日：2016-10-06
申请号：US14956202
申请日：2015-12-01
申请人： STMicroelectronics (Tours) SAS
发明人： Arnaud Edet , Christian Nopper
IPC分类号： H01R12/71 , H01R13/66
CPC分类号： H01R12/71 , H01R12/716 , H01R13/665 , H05K1/0298 , H05K1/14 , H05K1/185 , H05K2201/047
摘要： An electrical connector includes a frame delimiting an elongated open cavity, and having two parallel long sides provided with contact areas capable of cooperating with contact areas of a complementary electrical connector. Each long side is formed of a multilayer printed circuit board.
摘要翻译：电连接器包括限定细长开放空腔的框架，并且具有两个平行的长边，其设置有能够与互补电连接器的接触区域配合的接触区域。每个长边由多层印刷电路板形成。

39. 发明授权

US09406970B2 Method for forming a lithium-ion type battery 有权
标题翻译：锂离子型电池的形成方法
公开(公告)号：US09406970B2
公开(公告)日：2016-08-02
申请号：US13957518
申请日：2013-08-02
申请人： STMicroelectronics (Tours) SAS
发明人： Dominique Genard
IPC分类号： H01M10/04 , H01M10/0525 , H01M10/0585 , H01M4/04
CPC分类号： H01M10/0436 , H01M4/0423 , H01M10/0525 , H01M10/0585 , Y02E60/122 , Y02P70/54
摘要： A method for manufacturing a lithium-ion type battery including the steps of forming in a substrate a recess having lateral walls having a re-entrant profile; depositing, by successive non-conformal physical vapor depositions, a stack of the different layers forming a lithium-ion battery, this stack having a thickness smaller than the depth of the recess; depositing on the structure a filling layer filling the space remaining in the recess; and planarizing the structure to expose the upper surface of the stack.
摘要翻译：一种锂离子型电池的制造方法，其特征在于，在基板上形成具有侧壁的具有凹入轮廓的凹部的工序; 通过连续的非保形物理气相沉积沉积形成锂离子电池的不同层的堆叠，该堆叠的厚度小于凹部的深度; 在所述结构上沉积填充剩余在所述凹部中的空间的填充层; 并平坦化结构以暴露堆叠的上表面。

40. 发明申请

US20160027774A1 BIDIRECTIONAL SWITCH 有权
标题翻译：双向开关
公开(公告)号：US20160027774A1
公开(公告)日：2016-01-28
申请号：US14730826
申请日：2015-06-04
申请人： STMicroelectronics (Tours) SAS
发明人： Samuel Menard , Dalaf Ali
IPC分类号： H01L27/08 , H01L23/528
CPC分类号： H01L27/0817 , H01L23/528 , H01L29/0834 , H01L29/747 , H01L2924/0002 , H01L2924/13033 , H01L2924/00
摘要： A bidirectional switch formed in a substrate includes first and second main vertical thyristors in antiparallel connection. A third auxiliary vertical thyristor has a rear surface layer in common with the rear surface layer of the first thyristor. A peripheral region surrounds the thyristors and connects the rear surface layer to a layer of the same conductivity type of the third thyristor located on the other side of the substrate. A metallization connects the rear surfaces of the first and second thyristors. An insulating structure is located between the rear surface layer of the third thyristor and the metallization. The insulating structure extends under the periphery of the first thyristor. The insulating structure includes a region made of an insulating material and a complementary region made of a semiconductor material.
摘要翻译：形成在衬底中的双向开关包括反并联连接的第一和第二主垂直晶闸管。第三辅助垂直晶闸管具有与第一晶闸管的后表面层共同的后表面层。周边区域围绕晶闸管并且将后表面层连接到位于基板另一侧上的与第三晶闸管相同的导电类型的层。金属化连接第一和第二晶闸管的后表面。绝缘结构位于第三晶闸管的后表面层与金属化之间。绝缘结构在第一晶闸管的外围延伸。绝缘结构包括由绝缘材料制成的区域和由半导体材料制成的互补区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式