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1. 发明授权

US09673310B2 Direct drive LED driver and offline charge pump and method therefor 有权
公开(公告)号：US09673310B2
公开(公告)日：2017-06-06
申请号：US13930759
申请日：2013-06-28
申请人： David Schie , Mike Ward
发明人： David Schie , Mike Ward
IPC分类号： H05B37/00 , H01L29/745 , H01L27/08 , H05B33/08 , H02M3/07 , H02M1/42
CPC分类号： H01L29/7455 , H01L27/0814 , H01L27/0817 , H02M1/4208 , H02M3/07 , H05B33/0809 , H05B33/0815 , H05B33/0845 , Y02B70/126
摘要： In one embodiment, a Light Emitting Diode (LED) driving device for driving a plurality of LEDs has a switching matrix utilizing a plurality of one of a turn off thyristors or turn off triacs coupled to the plurality of LEDs. A controller is coupled to the switching matrix responsive to a voltage of a rectified AC halfwave, wherein combinations of the plurality of LEDs are altered to ensure a maximum operating voltage of the plurality of LEDs is not exceeded. A current limiting device is coupled to the combinations of the plurality of LED to regulate current.In a second embodiment an offline charge pump utilizes a switching matrix to recombine capacitors in accordance with the voltage on the AC half wave and then in accordance with a desired output voltage to feed a load, such that said recombinations occur at a frequency much higher than the frequency of the AC rectified half wave such that charge is “pumped” from the input at one voltage to the output at another voltage through the AC halfwave while providing a constant output voltage to the load.

2. 发明申请

US20150043260A1 POWER RECTIFIER USING TUNNELING FIELD EFFECT TRANSISTOR 有权
标题翻译：使用隧道场效应晶体管的功率整流器
公开(公告)号：US20150043260A1
公开(公告)日：2015-02-12
申请号：US14456303
申请日：2014-08-11
申请人： The Penn State Research Foundation
发明人： Huichu Liu , Ramesh Vaddi , Vijaykrishnan Narayanan , Suman Datta
IPC分类号： H01L27/06 , H02M7/217
CPC分类号： H01L27/0629 , H01L27/0814 , H01L27/0817 , H02M7/219 , H02M2007/2195 , Y02B70/1408
摘要： A power rectifier includes a stage having a first Tunneling Field-Effect Transistor (“TFET”) having a source, a gate, and a drain, a second TFET having a source, a gate, and a drain, a third TFET having a source, a gate, and a drain, and a fourth TFET having a source, a gate, and a drain such that the source of the first TFET, the source of the second TFET, the gate of the third TFET, and the gate of the fourth TFET are connected, the gate of the first TFET, the gate of the second TFET, the source of the third TFET and the source of the fourth TFET are connected, the drain of the first TFET and the drain of the third TFET are connected, and the drain of the second TFET and the drain of the fourth TFET are connected. Alternative embodiments are also disclosed.
摘要翻译：功率整流器包括具有源极，栅极和漏极的第一隧道场效应晶体管（“TFET”）的级，具有源极，栅极和漏极的第二TFET，具有源极，，栅极和漏极以及具有源极，栅极和漏极的第四TFET，使得第一TFET的源极，第二TFET的源极，第三TFET的栅极和第三TFET的栅极连接第四TFET，第一TFET的栅极，第二TFET的栅极，第三TFET的源极和第四TFET的源极连接，第一TFET的漏极和第三TFET的漏极连接并且连接第二TFET的漏极和第四TFET的漏极。还公开了替代实施例。

3. 发明申请

US20150002035A1 DIRECT DRIVE LED DRIVER AND OFFLINE CHARGE PUMP AND METHOD THEREFOR 审中-公开
标题翻译：直接驱动LED驱动器和离线充电泵及其方法
公开(公告)号：US20150002035A1
公开(公告)日：2015-01-01
申请号：US13930759
申请日：2013-06-28
申请人： David Schie , Mike Ward
发明人： David Schie , Mike Ward
IPC分类号： H05B33/08 , H01L29/745 , H01L27/08 , H01L29/74 , H02M3/07 , H01G4/38
CPC分类号： H01L29/7455 , H01L27/0814 , H01L27/0817 , H02M1/4208 , H02M3/07 , H05B33/0809 , H05B33/0815 , H05B33/0845 , Y02B70/126
摘要： In one embodiment, a Light Emitting Diode (LED) driving device for driving a plurality of LEDs has a switching matrix utilizing a plurality of one of a turn off thyristors or turn off triacs coupled to the plurality of LEDs. A controller is coupled to the switching matrix responsive to a voltage of a rectified AC halfwave, wherein combinations of the plurality of LEDs are altered to ensure a maximum operating voltage of the plurality of LEDs is not exceeded. A current limiting device is coupled to the combinations of the plurality of LED to regulate current.In a second embodiment an offline charge pump utilizes a switching matrix to recombine capacitors in accordance with the voltage on the AC half wave and then in accordance with a desired output voltage to feed a load, such that said recombinations occur at a frequency much higher than the frequency of the AC rectified half wave such that charge is “pumped” from the input at one voltage to the output at another voltage through the AC halfwave while providing a constant output voltage to the load.
摘要翻译：在一个实施例中，用于驱动多个LED的发光二极管（LED）驱动装置具有利用耦合到多个LED的关闭晶闸管或关闭三端双向可控硅开关中的多个的开关矩阵。响应于整流AC半波的电压，控制器耦合到开关矩阵，其中改变多个LED的组合以确保不超过多个LED的最大工作电压。电流限制装置耦合到多个LED的组合以调节电流。在第二实施例中，离线电荷泵利用开关矩阵根据AC半波上的电压重新组合电容器，然后根据期望的输出电压来馈送负载，使得所述重组以远高于交流整流半波的频率使得电荷通过AC半波从一个电压的输入“泵入”到另一电压的输出，同时向负载提供恒定的输出电压。

4. 发明申请

US20140232281A1 Rectifier Circuit and Power Source Circuit 审中-公开
标题翻译：整流电路和电源电路
公开(公告)号：US20140232281A1
公开(公告)日：2014-08-21
申请号：US13833865
申请日：2013-03-15
申请人： TOSHIBA LIGHTING & TECHNOLOGY CORPORATION
发明人： Hirokazu Otake , Noriyuki Kitamura , Yuji Takahashi , Hiroshi Akahoshi
IPC分类号： H02M7/06 , H02M3/335 , H05B33/08
CPC分类号： H02M7/06 , H01L27/0817 , H02M3/1588 , H02M3/335 , H05B33/08 , Y02B70/1466
摘要： According to an embodiment, a rectifier circuit includes a first diode, a switching element, and a second diode. The first diode is connected between a first terminal and a second terminal so that a direction toward the first terminal from the second terminal is in a forward direction. The switching element has a first main electrode connected to the first terminal, a second main electrode connected to a cathode of the first diode, and a gate electrode connected to an anode of the first diode. The second diode is connected in parallel with respect to the switching element so that a direction toward the first terminal from the cathode of the first diode is in a forward direction, between the first main electrode and the second main electrode of the switching element.
摘要翻译：根据实施例，整流器电路包括第一二极管，开关元件和第二二极管。第一二极管连接在第一端子和第二端子之间，使得从第二端子朝向第一端子的方向处于向前方向。开关元件具有连接到第一端子的第一主电极，连接到第一二极管的阴极的第二主电极和连接到第一二极管的阳极的栅电极。第二二极管相对于开关元件并联连接，使得从第一二极管的阴极朝向第一端子的方向在开关元件的第一主电极和第二主电极之间的正向方向上。

5. 发明申请

US20140104733A1 COMBINATION ESD PROTECTION CIRCUITS AND METHODS 有权
标题翻译：组合ESD保护电路和方法
公开(公告)号：US20140104733A1
公开(公告)日：2014-04-17
申请号：US14109080
申请日：2013-12-17
申请人： Micron Technology, Inc.
发明人： XIAOFENG FAN , MICHAEL D. CHAINE
IPC分类号： H02H9/04 , H01L27/02
CPC分类号： H02H9/044 , H01L27/0259 , H01L27/0262 , H01L27/0617 , H01L27/0817 , H02H9/046
摘要： Circuits, integrated circuits, apparatuses, and methods, such as those for protecting circuits against electrostatic discharge events are disclosed. In an example method, a thyristor is triggered to conduct current from a signal node to a reference voltage node using leakage currents provided by a transistor formed in a semiconductor doped well shared with the base of the thyristor. The leakage currents are responsive to a noise event (e.g., electrostatic discharge (ESD) event) at the signal node, and increase the voltage of the semiconductor doped well to forward bias the base and the collector of the thyristor. The triggered thyristor conducts the current resulting from the ESD event to the reference voltage node.
摘要翻译：公开了用于保护电路免受静电放电事件的电路，集成电路，装置和方法。在一个示例性方法中，晶闸管被触发以使用由在晶体管的基极共享的半导体掺杂阱中形成的晶体管提供的漏电流从信号节点传导到参考电压节点。泄漏电流响应于信号节点处的噪声事件（例如，静电放电（ESD）事件），并且增加半导体掺杂阱的电压以使晶闸管的基极和集电极正向偏置。触发晶闸管将ESD事件导致的电流导通到参考电压节点。

6. 发明授权

US08501580B2 Process of fabricating semiconductor device with low capacitance for high-frequency circuit protection 失效
标题翻译：制造具有低电容的半导体器件用于高频电路保护的工艺
公开(公告)号：US08501580B2
公开(公告)日：2013-08-06
申请号：US13036582
申请日：2011-02-28
申请人： Jerry Hu , Panchien Lin , Bert Huang
发明人： Jerry Hu , Panchien Lin , Bert Huang
IPC分类号： H01L21/76 , H01L21/30 , H01L21/425 , H01L21/302
CPC分类号： H01L21/76283 , H01L21/761 , H01L21/76237 , H01L27/0255 , H01L27/0814 , H01L27/0817
摘要： A process for fabricating a semiconductor device includes depositing n-type dopant on a p-type substrate, implanting n-type material into the substrate, and growing an n-type epitaxial layer atop the n+ layer. Trenches surrounding the device region are formed and an n+ layer on the sidewalls of the trenches is formed. The trenches are filled by growing a layer of thermal oxide on the sidewalls of the trenches and deposition of plasma enhanced oxide or polysilicon into the trenches, and planarizing the top surface. n+ region of the device is formed by forming an oxide layer on the top surface of the device layer and etching the oxide, depositing n-type dopant material and driving in by high temperature diffusion. p+ region of the device is formed by etching the oxide, depositing p-type dopant material and driving in by high temperature diffusion so that the breakdown voltage is set for circuit protection.
摘要翻译：一种用于制造半导体器件的工艺包括在p型衬底上沉积n型掺杂剂，将n型材料注入到衬底中，以及在n +层顶上生长n型外延层。形成围绕器件区域的沟槽，并形成沟槽侧壁上的n +层。通过在沟槽的侧壁上生长一层热氧化物并且将等离子体增强的氧化物或多晶硅沉积到沟槽中并平坦化顶表面来填充沟槽。 n +区域通过在器件层的顶表面上形成氧化物层并蚀刻氧化物，沉积n型掺杂剂材料并通过高温扩散进行而形成。通过蚀刻氧化物，沉积p型掺杂剂材料并通过高温扩散驱动来形成器件的p +区，从而设置用于电路保护的击穿电压。

7. 发明申请

US20130153953A1 OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME 有权
公开(公告)号：US20130153953A1
公开(公告)日：2013-06-20
申请号：US13328796
申请日：2011-12-16
申请人： Ahmed Elasser , Arthur Stephen Daley , Alexey Vert , Stanislav I. Soloviev , Peter Almern Losee
发明人： Ahmed Elasser , Arthur Stephen Daley , Alexey Vert , Stanislav I. Soloviev , Peter Almern Losee
IPC分类号： H01L27/06 , H01L21/332
CPC分类号： H01L31/1113 , H01L27/0817 , H01L29/74
摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

8. 发明授权

US08416015B2 Active rectifying apparatus 有权
标题翻译：主动整流装置
公开(公告)号：US08416015B2
公开(公告)日：2013-04-09
申请号：US13078386
申请日：2011-04-01
申请人： Chikara Tsuchiya
发明人： Chikara Tsuchiya
IPC分类号： H03K17/74 , H03G11/02
CPC分类号： H03K17/302 , H01L27/0817 , H01L27/088 , H03K2017/307
摘要： A semiconductor apparatus includes: a first transistor; a second transistor having a higher withstand voltage than the first transistor, a source of the second transistor coupled to a drain of the first transistor, a gate of the second transistor coupled to a source of the first transistor; a third transistor having a higher withstand voltage than the first transistor and a drain of the third transistor coupled to a drain of the second transistor; and a comparator that compares a source voltage of the first transistor with a source voltage of the third transistor, and controls a gate voltage of the first transistor.
摘要翻译：一种半导体装置，包括：第一晶体管; 第二晶体管具有比第一晶体管更高的耐受电压，第二晶体管的源极耦合到第一晶体管的漏极，第二晶体管的栅极耦合到第一晶体管的源极; 具有比第一晶体管更高的耐受电压的第三晶体管和耦合到第二晶体管的漏极的第三晶体管的漏极; 以及比较器，其将第一晶体管的源极电压与第三晶体管的源极电压进行比较，并且控制第一晶体管的栅极电压。

9. 发明申请

US20120200975A1 LOW FORWARD VOLTAGE DROP TRANSIENT VOLTAGE SUPPRESSOR AND METHOD OF FABRICATING 有权
标题翻译：低向前电压瞬时电压抑制器和制造方法
公开(公告)号：US20120200975A1
公开(公告)日：2012-08-09
申请号：US13366944
申请日：2012-02-06
申请人： Lung-Ching Kao , Pu-Ju Kung , Yu-Ju Yu
发明人： Lung-Ching Kao , Pu-Ju Kung , Yu-Ju Yu
IPC分类号： H02H3/22 , H01R43/00
CPC分类号： H01L29/868 , H01L27/0814 , H01L27/0817 , H01L29/861 , H01L29/872 , Y10T29/49117 , Y10T29/49169 , Y10T29/49171
摘要： A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.
摘要翻译：低正向压降瞬态电压抑制器利用在单个集成电路器件中与高反向电压额定肖特基整流器并联电连接的低反向电压额定PN二极管。瞬态电压抑制器非常适合固定PN二极管的高正向压降和肖特基整流器低反向击穿的高泄漏问题。低反向电压PN整流器可以通过以下方法制造：1）双层epi（底部具有较高浓度层epi）或2）通过压缩的基极通过PN二极管的穿孔设计。

10. 发明授权

US08129292B2 Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor 有权
标题翻译：集成电路布置与冲击二极管或晶闸管以及制造和使用晶闸管的方法
公开(公告)号：US08129292B2
公开(公告)日：2012-03-06
申请号：US12690776
申请日：2010-01-20
申请人： Ulrich Glaser , Harald Gossner , Kai Esmark
发明人： Ulrich Glaser , Harald Gossner , Kai Esmark
IPC分类号： H01L29/744 , H01L29/74
CPC分类号： H01L29/7436 , H01L27/0255 , H01L27/0266 , H01L27/0814 , H01L27/0817 , H01L29/87 , H01L2924/0002 , Y10S438/919 , Y10S438/922 , Y10S438/923 , H01L2924/00
摘要： An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having improved electrical properties, in particular with regard to the use as an ESD protection element.
摘要翻译：集成电路装置包括Shockley二极管或晶闸管。在植入p型阱期间，二极管或晶闸管的内部区域被完全或部分屏蔽。这导致Shockley二极管或具有改善的电性能的晶闸管，特别是关于用作ESD保护元件的晶闸管。

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