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31. 发明授权

US4774122A Resinous product provided with surface coatable with metal layer bonded through an array of microdendrites and metal-clad resinous product thereof 失效
标题翻译：树脂产品具有表面可涂覆的金属层，通过微阵列阵列和金属包覆的树脂产物结合
公开(公告)号：US4774122A
公开(公告)日：1988-09-27
申请号：US19239
申请日：1987-02-26
申请人： Edward Adler
发明人： Edward Adler
IPC分类号： B32B15/08 , C23C18/20 , C23C18/22 , C23C18/28 , H05K3/18 , H05K3/38 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： C23C18/22 , H05K3/381 , H05K2203/0307 , H05K2203/0723 , H05K2203/1152 , H05K3/181 , Y10S428/901 , Y10T428/24479 , Y10T428/24529 , Y10T428/24545 , Y10T428/24595 , Y10T428/24612
摘要： A resinous product is disclosed which possesses a resinous surface coatable with a layer of metal which can be bonded through an array of microdendrites extending below the resinous surface. The resinous products are prepared by coating the surface of a metal plate with microdendrites, pressing the microdendrite covered metal surface into the resinous surface, curing the resin and stripping away the plate to leave the microdendrites embedded in the cured resinous surface. The embedded microdendrites are dissolved away to produce a micro-rough resinous surface having an array of microdendrite-shaped cavities. The resinous product can be used for printed circuits and the like.
摘要翻译：公开了一种树脂产品，其具有可涂覆有一层金属的树脂表面，该金属层可以通过在树脂表面下方延伸的微晶粒阵列结合。树脂产品通过用微型树枝状结构涂覆金属板的表面，将微硬覆盖的金属表面压入树脂表面，固化树脂并剥离板离开嵌入固化的树脂表面中的微枝晶来制备。将嵌入的微晶体溶解掉以产生具有微型树枝状空腔阵列的微粗糙树脂表面。树脂产品可用于印刷电路等。

32. 发明授权

US4764249A Method for producing a coating layer for semiconductor technology and also use of the coating layer 失效
标题翻译：用于半导体技术的涂层的制造方法以及涂层的使用
公开(公告)号：US4764249A
公开(公告)日：1988-08-16
申请号：US26481
申请日：1987-03-16
申请人： Jens Gobrecht , Jan Voboril
发明人： Jens Gobrecht , Jan Voboril
IPC分类号： H01L21/3205 , H01L21/302 , H01L21/3065 , H01L21/308 , H01L29/06 , H01L29/40 , H01L29/78 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L29/402 , H01L21/308 , H01L21/3083 , H01L29/0615 , H01L29/7813
摘要： A coating layer (2) for semiconductor technology having an edge contour which has a wedge-shaped cross section is produced by predominantly anisotropic dry etching of the coating layer (2) through a mask (4) disposed in front of the coating layer (2) at a finite mask distance (A).The coating layer (2) etched in this manner is especially well suited as an insulating substrate for a field plate in the edge region of a P-N junction emerging at the surface and also as implantation mask for producing a P-N junction with lateral doping gradients.
摘要翻译：通过主要通过设置在涂层（2）前面的掩模（4）对涂层（2）进行各向异性干法蚀刻，产生具有楔形横截面的边缘轮廓的用于半导体技术的涂层（2））在有限的掩模距离（A）。以这种方式蚀刻的涂层（2）特别适合作为在表面出现的P-N结的边缘区域中的场板的绝缘衬底，以及用于产生具有横向掺杂梯度的P-N结的注入掩模。

33. 发明授权

US4764247A Silicon containing resists 失效
标题翻译：含硅抗蚀剂
公开(公告)号：US4764247A
公开(公告)日：1988-08-16
申请号：US27422
申请日：1987-03-18
申请人： Carina T. Leveriza , Russell A. Morgan
发明人： Carina T. Leveriza , Russell A. Morgan
IPC分类号： C08L25/08 , C08L25/00 , G03F7/038 , G03F7/075 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： G03F7/0758 , Y10S438/948 , Y10T428/31663
摘要： The fabrication of improved semiconductor devices having photoresist materials in the form of silicon containing polystyrene copolymers of a halomethylstyrene and an alkylsilylstyrene and the resulting improved semiconductor wafer device containing silicon prior to etching; the resulting resist having reduced resist erosion and improved plasma resiliency.

34. 发明授权

US4750972A Process for fabricating tuned light guide for photoelectrons 失效
标题翻译：制造光电子调谐光导的工艺
公开(公告)号：US4750972A
公开(公告)日：1988-06-14
申请号：US39916
申请日：1987-04-20
申请人： Michael E. Casey , Ronald Nutt , Terry D. Douglass
发明人： Michael E. Casey , Ronald Nutt , Terry D. Douglass
IPC分类号： G01T1/202 , G01T1/29 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G01T1/202 , G01T1/2985
摘要： A two dimensional photon position encoder system (10) and process which includes a detector (20) for enhancing the spatial resolution of the situs of the origin of incident photons of gamma rays. A plurality of scintillator material members (22) interact with the incident photons and produce a quantifiable number of photons which exit the scintillation material members. A tuned light guide (68) having a plurality of radiation barriers (92) of predetermined lengths define slots which are operatively associated with one of the scintillator material members. Photons exiting the scintillator material members (22) enter an operatively associated slot in said slotted light guide. These slots (90) serve to enhance the predictability of the statistical distribution of photons along the length of the slotted light guide (68). A detector (20) detects the distribution of the photons at preselected locations along the length of the slotted light guide. In one embodiment, this detector (20) comprises a photomultiplier (70) which gathers information concerning the photoelectrons which are then counted. The statistical distribution of these photoelectrons is processed by an improved pattern recognition technique such that the positioning information can be determined.
摘要翻译：一种二维光子位置编码器系统（10），其包括用于增强伽马射线入射光子原点的位置的空间分辨率的检测器（20）的处理。多个闪烁体材料构件（22）与入射的光子相互作用并产生可从数量上闪烁的材料构件的数量的光子。具有多个具有预定长度的辐射屏障（92）的调谐光导（68）限定与闪烁体材料构件之一可操作地相关的槽。离开闪烁体材料构件（22）的光子进入所述开槽光导中的可操作地关联的狭槽。这些槽（90）用于增强沿着带槽光导（68）的长度的光子的统计分布的可预测性。检测器（20）沿着狭缝光导的长度检测预选位置处的光子的分布。在一个实施例中，该检测器（20）包括光电倍增器（70），其收集关于光电子的信息，然后对其进行计数。这些光电子的统计分布通过改进的模式识别技术来处理，使得可以确定定位信息。

35. 发明授权

US4749440A Gaseous process and apparatus for removing films from substrates 失效
标题翻译：用于从基底去除膜的气体过程和设备
公开(公告)号：US4749440A
公开(公告)日：1988-06-07
申请号：US48952
申请日：1987-05-12
申请人： Robert S. Blackwood , Rex L. Biggerstaff , L. Davis Clements , C. Rinn Cleavelin
发明人： Robert S. Blackwood , Rex L. Biggerstaff , L. Davis Clements , C. Rinn Cleavelin
IPC分类号： H01L21/311 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/31116 , Y10S134/902
摘要： A process for removing at least a portion of a film from a substrate, such as a wafer of silicon or other similar materials, the film on the substrate typically being an oxide film, maintaining the atmosphere embracing the substrate at near room temperature and at near normal atmospheric pressure, flowing dry inert diluent gas over the substrate, introducing a flow of reactive gas, preferably an anhydrous hydrogen halide gas, namely anhydrous hydrogen flouride gas, for typically 5 to 30 seconds over the substrate and film to cause the removal of portions of the film, flowing water vapor laden inert gas, preferably nitrogen, over the substrate and film from a time prior to commencing flow of the reactive gas until flow of the reactive gas is terminated. In the case of non-hygroscopic film on the substrate, the flow of water vapor continues during the flow of the reactive gas and is terminated shortly after the termination of the flow of reactive gas. In the case of hygroscopic film, the flow of water vapor is discontinued prior to the start of flow of the reactive gas. In carrying out the process, a process chamber is needed to confine the substrate and have a vent, which though restricted, continuously open to the atmosphere.
摘要翻译：用于从诸如硅晶片或其它类似材料的衬底去除至少一部分膜的方法，衬底上的膜通常为氧化物膜，将包围衬底的气氛保持在接近室温和接近通常的大气压力，流动的干燥的惰性稀释气体在衬底上，在衬底和膜上引入反应性气体流，优选无水氢氧化物气体即无水氢氟酸气体一般为5至30秒，以使部分的膜，来自负载气体的惰性气体，优选氮气，从反应气体开始流动之前的时间开始到衬底和膜上，直到反应气体的流动终止。在衬底上的非吸湿膜的情况下，在反应气体流动期间水蒸气的流动继续，并且在反应气体流动结束后不久就终止。在吸湿膜的情况下，在反应气体开始流动之前中断水蒸汽的流动。在进行该过程时，需要一个处理室来限制基板并且具有尽管有限制地连续向大气敞开的通风口。

36. 发明授权

US4744858A Integrated circuit metallization with reduced electromigration 失效
公开(公告)号：US4744858A
公开(公告)日：1988-05-17
申请号：US710346
申请日：1985-03-11
申请人： James M. McDavid , Dirk N. Anderson
发明人： James M. McDavid , Dirk N. Anderson
IPC分类号： H01L21/768 , H01L23/532 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/76804 , H01L23/53214 , H01L2924/0002 , Y10S438/927 , Y10S438/964
摘要： The specification discloses a method and a device wherein circuit elements (10) are formed on the surface of a semiconductor body (12). A layer of oxide (22) is applied over the circuit element (10). An aperture (32) is opened through the oxide layer (22). The surface of oxide layer (22) is nonuniformly substantially roughened. A layer of metal (24) such as aluminum is formed over the oxide layer (22) and extends into the aperture (32) for contact with a portion of the device (10). The layer of metal (24) has increased granular structure and a roughened exterior surface to provide enhanced electromigration properties.

37. 发明授权

US4737234A Method and apparatus for permanently recording high neutron fluence 失效
标题翻译：永久记录高中子注量的方法和装置
公开(公告)号：US4737234A
公开(公告)日：1988-04-12
申请号：US897553
申请日：1986-08-18
申请人： Francis H. Ruddy
发明人： Francis H. Ruddy
IPC分类号： G01T3/00 , G01T5/10 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G01T5/10 , G01T3/00
摘要： A method and apparatus are described for producing a high fluence neutron dosimeter which serves as a permanent record for fission rate measurement. An alpha-emitting source which is a radioactive parent of the daughter isotope of interest is used to implant recoil ions resulting from alpha decay into a substrate such as a mica solid state track recorder. The source and the mica solid state track recorder are arranged in spaced, opposing relation in an assembly housed in a vacuum. For example, a .sup.241 Am source in thin layer form can be placed next to the mica solid state track recorder. Each alpha decay of .sup.241 Am results in a .sup.237 Np ion with enough recoil energy to be implanted in the solid state track recorder. An ion-implanted mica solid state track recorder so produced is then exposed to neutrons, etched, and both the induced fission tracks and recoil ion tracks are counted. As a result, the fission rate in fissions per atom can be calculated.

38. 发明授权

US4734158A Molecular beam etching system and method 失效
标题翻译：分子束蚀刻系统及方法
公开(公告)号：US4734158A
公开(公告)日：1988-03-29
申请号：US026072
申请日：1987-03-16
申请人： Harry P. Gillis
发明人： Harry P. Gillis
IPC分类号： H01J37/30 , C23F4/00 , H01J37/305 , H01L21/302 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/3065
摘要： A particle beam etching system and method are disclosed in which ion and substantially ion-free chemical radical beams are generated separately and directed onto the same portion of a semiconductor wafer to be etched, preferably perpendicular to the wafer. The beam diameters are substantially smaller than the etching area, and the wafer is moved in an x,y plane to expose the entire etching area to the beams. The redical beam is preferably supersonic, with a flux in the approximate range of 10.sup.19 -10.sup.21 particles per steradian per second, while the ion beam preferably has a density of approximately 10.sup.14 ions per cm.sup.2 per second. The progress of the etching and the location of etching end points are continuously monitored and used to control the etching rate and wafer movement, yielding etching that is both anisotropic and selective, with an accurate and uniform etch depth.
摘要翻译：公开了一种粒子束蚀刻系统和方法，其中离子和基本上无离子的化学自由基束单独产生并且被引导到待蚀刻的半导体晶片的相同部分上，优选垂直于晶片。光束直径基本上小于蚀刻区域，并且晶片在x，y平面中移动以将整个蚀刻区域暴露于光束。红色光束优选为超音速，每秒钟速度范围为约1019-1021个颗粒，而离子束的密度优选为每平方厘米每平方厘米约1014个离子。连续监测蚀刻的进展和蚀刻终点的位置，并用于控制蚀刻速率和晶片移动，产生具有各向异性和选择性的蚀刻，并具有准确且均匀的蚀刻深度。

39. 发明授权

US4732648A Method of preparing semiconductor substrates 失效
标题翻译：半导体衬底的制备方法
公开(公告)号：US4732648A
公开(公告)日：1988-03-22
申请号：US942473
申请日：1986-12-16
申请人： Hans Fronius , Albrecht Fischer , Klaus Ploog
发明人： Hans Fronius , Albrecht Fischer , Klaus Ploog
IPC分类号： H01L21/203 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/02392 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L21/30625
摘要： A new method for GaAs substrate preparation which significantly reduces theormation of oval defects during MBE growth of selectively doped n-Al.sub.x Ga.sub.1-x As/GaAs heterostructures. The method simply requires treatment in H.sub.2 SO.sub.4 after mechano-chemical polishing in NaOCl solution and generation of a protective surface oxide during in soldering. Routinely a density of oval defects of less than 200 cm.sup.-2 is achieved for 2-.mu.m thick heterostructures. The efficiency of the new preparation procedure is demonstrated by 2DEG mobilities in excess of 10.sup.6 cm.sup.2 /Vs at 6K obtained with a spacer width as narrow as 18 nm.
摘要翻译：一种用于GaAs衬底制备的新方法，其在选择性掺杂的n-Al x Ga 1-x As / GaAs异质结构的MBE生长期间显着减少椭圆形缺陷的形成。该方法只需要在NaOCl溶液中机械化学抛光后在H2SO4中进行处理，并在焊接过程中产生保护性表面氧化物。实际上，对于2μm厚的异质结构，实现小于200cm-2的椭圆形缺陷的密度。新的制备方法的效率通过在6K处超过106cm 2 / Vs的2DEG迁移率证明，其间隔宽度窄至18nm。

40. 发明授权

US4717447A Method of manufacturing a semiconductor device by means of plasma etching 失效
标题翻译：通过等离子体蚀刻制造半导体器件的方法
公开(公告)号：US4717447A
公开(公告)日：1988-01-05
申请号：US547178
申请日：1983-10-31
申请人： Jan Dieleman , Franciscus H. M. Sanders
发明人： Jan Dieleman , Franciscus H. M. Sanders
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/31116
摘要： A method of manufacturing a semiconductor device in which a layer of silicon nitride overlying a silicon oxide layer present on a substrate is etched by bringing it into contact with substantially only uncharged constituents of a plasma formed in a reactor to which a substantially oxygen-free gas or gas mixture is supplied. According to the invention, 0.1 to 25% by volume of a halogen different from fluorine, or of a compound containing a halogen different from fluorine, is added to this gas or gas mixture containing fluorine or a fluorine compound. Thus, a high etching selectivity of silicon nitride with respect to silicon oxide is obtained which does not vary during etching.
摘要翻译：一种半导体器件的制造方法，其中通过使基板上仅形成在基本上不含基本上不含氧气体的反应器中形成的等离子体的不带电组分与基板上存在的氧化硅层叠置的氮化硅层被蚀刻或气体混合物。根据本发明，在含有氟或氟化合物的气体或气体混合物中加入0.1〜25体积％的不同于氟的卤素或含有不同于氟的卤素的化合物。因此，获得氮化硅相对于氧化硅的高蚀刻选择性，其在蚀刻期间不变化。

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