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31. 发明申请

US20230095556A1 ACOUSTIC WAVE FILTER WITH SHUNT RESONATOR FOR FILTER STEEPNESS 有权
公开(公告)号：US20230095556A1
公开(公告)日：2023-03-30
申请号：US17936074
申请日：2022-09-28
申请人： Skyworks Solutions, Inc.
发明人： Tomoya Komatsu , Yiliu Wang , Jinbaek Song
IPC分类号： H03H9/56 , H03H9/205 , H03H9/13
摘要： Aspects of this disclosure relate to an acoustic wave filter with shunt bulk acoustic wave resonators. In some embodiments, the acoustic wave filter is a band pass filter having a pass band. One of the shunt bulk acoustic wave resonators can contribute to forming an upper edge of the pass band. That shunt bulk acoustic wave resonator can be smaller than another shunt bulk acoustic wave resonator of the acoustic wave filter.

32. 发明授权

US11616488B2 FBAR devices having multiple epitaxial layers stacked on a same substrate 有权
公开(公告)号：US11616488B2
公开(公告)日：2023-03-28
申请号：US16326590
申请日：2016-09-30
申请人： INTEL CORPORATION
发明人： Sansaptak Dasgupta , Paul B. Fischer , Han Wui Then , Marko Radosavljevic
IPC分类号： H03H9/205 , H03H3/02 , H03H9/58 , H03H9/60 , H03H9/17 , H01L27/20 , H01L41/08 , H01L41/187 , H01L41/29 , H01L41/316 , H03H9/02
摘要： An integrated circuit film bulk acoustic resonator (FBAR) device having multiple resonator thicknesses is formed on a common substrate in a stacked configuration. In an embodiment, a seed layer is deposited on a substrate, and one or more multi-layer stacks are deposited on the seed layer, each multi-layer stack having a first metal layer deposited on a first sacrificial layer, and a second metal layer deposited on a second sacrificial layer. The second sacrificial layer can be removed and the resulting space is filled in with a piezoelectric material, and the first sacrificial layer can be removed to release the piezoelectric material from the substrate and suspend the piezoelectric material above the substrate. More than one multi-layer stack can be added, each having a unique resonant frequency. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate.

33. 发明申请

US20230059917A1 METHODS OF PLASMA DICING BULK ACOUSTIC WAVE COMPONENTS 有权
公开(公告)号：US20230059917A1
公开(公告)日：2023-02-23
申请号：US18047806
申请日：2022-10-19
申请人： Skyworks Solutions, Inc.
发明人： Atsushi Takano , Takeshi Furusawa , Mitsuhiro Furukawa
IPC分类号： H03H9/02 , H03H3/02 , H01L41/338 , H03H9/10 , H03H9/205 , H03H9/56 , H03H9/05
摘要： Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components

34. 发明申请

US20230024966A1 TRANSVERSELY-EXCITED FILM BULK ACOUSTIC FILTERS WITH EXCESS PIEZOELECTRIC MATERIAL REMOVED 有权
公开(公告)号：US20230024966A1
公开(公告)日：2023-01-26
申请号：US17958311
申请日：2022-09-30
申请人： Resonant Inc.
发明人： Ventsislav Yantchev
IPC分类号： H03H9/56 , H03H9/02 , H03H3/02 , H03H9/205
摘要： Filter devices and fabrication methods are disclosed. A filter device includes a piezoelectric plate and a conductor pattern on a front surface of the piezoelectric plate. The conductor pattern includes interdigital transducers (IDTs) of a plurality of transversely-excited film bulk acoustic resonators (XBARs) and a plurality of conductors connecting the plurality of XBARs in a ladder filter circuit architecture. The plurality of conductors includes a first conductor adjacent to a second conductor. An opening is provided through the piezoelectric plate between the first conductor and the second conductor.

35. 发明申请

US20230022403A1 TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS WITH NARROW GAPS BETWEEN BUSBARS AND ENDS OF INTERDIGITAL TRANSDUCER FINGERS 有权
公开(公告)号：US20230022403A1
公开(公告)日：2023-01-26
申请号：US17961231
申请日：2022-10-06
申请人： Resonant Inc.
发明人： Bryant GARCIA , Filip ILIEV
IPC分类号： H03H9/54 , H03H9/02 , H03H3/02 , H03H9/205
摘要： An acoustic resonator has a piezoelectric plate attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) formed on the plate has interleaved fingers on the diaphragm with first parallel fingers extending from a first busbar and second parallel fingers extending from a second busbar of the IDT. An average center-to-center distance between adjacent interleaved fingers defines an IDT pitch. The IDT has a gap distance between the ends of the first plurality of parallel fingers and the second busbar, and between the ends of the second plurality of parallel fingers and the first busbar; and the gap distance is less than ⅔ times the IDT pitch.

36. 发明申请

US20230012774A1 TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR MATRIX FILTERS WITH NONCONTIGUOUS PASSBAND 有权
公开(公告)号：US20230012774A1
公开(公告)日：2023-01-19
申请号：US17950010
申请日：2022-09-21
申请人： Resonant Inc.
发明人： Andrew Guyette , Neal Fenzi , Michael Eddy , Bryant Garcia
IPC分类号： H03H9/54 , H03H9/205 , H03H9/56
摘要： There are disclosed matrix filters having an input port and sub-filters connected between the input port and respective output ports. Each of the sub-filters includes a ladder circuit with n transversely-excited film bulk acoustic resonator (XBAR) series elements and n−1 capacitor shunt elements, where n, the order of the sub-filter, is an integer greater than 2. The sub-filters having noncontiguous passbands.

37. 发明授权

US11558032B2 RF filters and resonators of crystalline III-N films 有权
公开(公告)号：US11558032B2
公开(公告)日：2023-01-17
申请号：US16327720
申请日：2016-09-30
申请人： INTEL CORPORATION
发明人： Sansaptak Dasgupta , Bruce A. Block , Paul B. Fischer , Han Wui Then , Marko Radosavljevic
IPC分类号： H03H9/05 , H03H9/13 , H03H9/205 , H03H3/02 , H03H9/17 , H03H9/02 , H03H9/64 , H03H9/58 , H03H3/007
摘要： A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint.

38. 发明申请

US20220393668A1 ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT DEVICE 有权
公开(公告)号：US20220393668A1
公开(公告)日：2022-12-08
申请号：US17890116
申请日：2022-08-17
申请人： Akoustis, Inc.
发明人： Jeffrey B. SHEALY , Michael D. HODGE , Rohan W. HOULDEN , Mary WINTERS , Ramakrishna VETURY , Ya SHEN , David M. AICHELE
IPC分类号： H03H9/60 , H03H9/13 , H03H9/02 , H03H9/205
摘要： An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

39. 发明申请

US20220385274A1 5G n79 WI-FI ACOUSTIC TRIPLEXER CIRCUIT 有权
公开(公告)号：US20220385274A1
公开(公告)日：2022-12-01
申请号：US17886149
申请日：2022-08-11
申请人： AKOUSTIS, INC.
发明人： Rohan W. HOULDEN , David M. AICHELE , Jeffrey B. SHEALY
IPC分类号： H03H9/70 , H03H9/02 , H03H9/205 , H03H9/58 , H03H9/60 , H03H9/54 , H03H3/02 , H03H9/00
摘要： An RF triplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

40. 发明申请

US20220376675A1 MULTIPLEXER 有权
公开(公告)号：US20220376675A1
公开(公告)日：2022-11-24
申请号：US17868817
申请日：2022-07-20
申请人： Murata Manufacturing Co., Ltd.
发明人： Yasumasa TANIGUCHI , Koji NOSAKA , Ryo NAKAGAWA
IPC分类号： H03H9/70 , H03H9/205 , H03H9/13 , H03H9/60
摘要： When a current flowing in a series circuit including an equivalent resistance, an equivalent inductor, and an equivalent capacitance in an electric equivalent circuit of a specific resonator in each filter is defined as an acoustic path current, under conditions that a phase of an acoustic path current of a first transmission filter at a side of a common terminal at a frequency within a first transmission band is represented as θ1Tx, a phase of an acoustic path current of the first transmission filter at the side of the common terminal at a frequency within a second transmission band is represented as θ2Tx, a phase of an acoustic path current of a first reception filter at the side of the common terminal at a frequency within the first transmission band is represented as θ1Rx, and a phase of an acoustic path current of the first reception filter at the side of the common terminal at a frequency within the second transmission band is represented as θ2Rx, a multiplexer satisfies a first condition: |(2·θ1Tx−θ2Tx)−(2·θ1Rx−θ2Rx)|=180°±90°, or a second condition: |(2·θ2Tx−θ1Tx)−(2·θ2Rx−θ1Rx)|=180°±90°.

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