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1. 发明授权

US11538980B2 Electroactive polymer actuator device and driving method 有权
公开(公告)号：US11538980B2
公开(公告)日：2022-12-27
申请号：US16305430
申请日：2017-06-07
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Achim Hilgers , Daan Anton Van Den Ende , Mark Thomas Johnson , Roland Alexander Van De Molengraaf
IPC分类号： H01L41/107 , H01L27/20 , C08L27/16 , H01L41/047 , H01L41/083 , H01L41/193
摘要： An actuator device has an electroactive polymer actuator (35) and an integrated piezoelectric transformer (30) whose primary side (32) and secondary side (34) are formed from different electroactive polymer materials. At least the secondary side (34) of the transformer shares a piezoelectric electroactive polymer layer (36) with the electroactive polymer actuator, so that lower external voltages can be applied to the device.

2. 发明授权

US11456700B1 Specifying SC and IT cut quartz resonators for optimal temperature compensated oscillator performance 有权
公开(公告)号：US11456700B1
公开(公告)日：2022-09-27
申请号：US17407665
申请日：2021-08-20
申请人： Rockwell Collins, Inc.
发明人： John Day
IPC分类号： H03B5/04 , H03B5/32 , H01L23/00 , H03H9/205 , H01L27/20 , H03L7/099 , H03L7/085
摘要： An oscillator includes dual resonators mounted in a helium filled coldweld holder. One resonator operates at anti-resonance into a load capacitance of about 20 picofarads, and operates on a third overtone frequency under noncontrolled temperature conditions. The other resonator operates on a fundamental mode at anti-resonance in a load capacitance of about 32 picofarads. Resonator crystals in a dual-crystal resonator may include a theta-angle shift to equalize frequency versus temperature curves at temperature extremes.

3. 发明申请

US20220208852A1 STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
公开(公告)号：US20220208852A1
公开(公告)日：2022-06-30
申请号：US17156967
申请日：2021-01-25
申请人： United Microelectronics Corp.
发明人： Zhi-Biao Zhou
IPC分类号： H01L27/20 , H01L29/16 , H01L29/78 , H01L29/20 , H01L29/778 , H01L21/8258 , H01L23/34 , H01L23/367 , H01L23/552 , H03H9/17 , H03H9/54 , H03H9/56 , H03H3/02
摘要： A structure of a semiconductor device is provided, including a circuit substrate. A first metal bulk layer is disposed on the circuit substrate. A buffer layer is disposed on the first metal bulk layer. An absorbing layer is disposed on the buffer layer. A first electrode layer is disposed on the absorbing layer. A plurality of piezoelectric material units are disposed on the first electrode layer. A protection layer is conformally disposed on the piezoelectric material units. A second metal bulk layer is disposed over the piezoelectric material units, and including a first part and a second part. The first part penetrating through the protection layer is disposed on the piezoelectric material units, serving as a second electrode layer. The second part is at a same level of the first part, and at least electrically connecting to the first electrode layer.

4. 发明授权

US11309352B2 Integrated acoustic filter on complementary metal oxide semiconductor (CMOS) die 有权
公开(公告)号：US11309352B2
公开(公告)日：2022-04-19
申请号：US16116744
申请日：2018-08-29
申请人： QUALCOMM Incorporated
发明人： Sinan Goktepeli , Stephen Alan Fanelli , Yun Han Chu
IPC分类号： H01L27/00 , H01L27/20 , H03H9/05 , H03H9/56 , H03H3/02 , H03H3/08 , H03H9/64 , H03H3/007 , H03H9/10 , H03H9/54 , H03H9/46 , B81C1/00 , H03H1/00
摘要： A radio frequency (RF) front-end (RFFE) device includes a die having a front-side dielectric layer on an active device. The active device is on a first substrate. The RFFE device also includes a microelectromechanical system (MEMS) device. The MEMS device is integrated on the die at a different layer than the active device. The MEMS device includes a cap layer composed of a cavity in the front-side dielectric layer of the die. The cavity in the front-side dielectric layer is between the first substrate and a second substrate. The cap is coupled to the front-side dielectric layer.

5. 发明申请

US20220085101A1 INTEGRATED STRUCTURE OF CRYSTAL RESONATOR AND CONTROL CIRCUIT AND INTEGRATION METHOD THEREFOR 有权
公开(公告)号：US20220085101A1
公开(公告)日：2022-03-17
申请号：US17419675
申请日：2019-11-05
申请人： NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION (SHANGHAI BRANCH)
发明人： Xiaoshan QIN
IPC分类号： H01L27/20 , H03H3/02 , H03H9/05 , H03H9/19
摘要： An integrated structure of crystal resonator and control circuit and an integration method therefor. A lower cavity is formed in a device wafer, and an upper cavity is formed in a substrate. A bonding process is then performed to bond the device wafer and the substrate together in such a manner that a piezoelectric vibrator is sandwiched between the device wafer and the substrate, with the lower and upper cavities being located on opposing sides of the piezoelectric vibrator, thus resulting in the formation of the crystal resonator. Moreover, the crystal resonator is brought into electrical connection with the control circuit, achieving integration of the two. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.

6. 发明申请

US20220006001A1 ELECTRICAL COMPONENT 有权
公开(公告)号：US20220006001A1
公开(公告)日：2022-01-06
申请号：US17294207
申请日：2019-11-15
申请人： Xaar Technology Limited
发明人： Andrew Vella , Peter Mardilovich
IPC分类号： H01L41/053 , H01L41/08 , H01L27/20 , B41J2/14
摘要： The present invention relates to an electrical component for a microelectromechanical systems (MEMS) device, in particular, but not limited to, an electromechanical actuator. In one aspect, the present invention provides an electrical component for a microelectromechanical systems device comprising: i) a substrate layer; ii) a plurality of adjacent electrical elements arranged over the substrate layer, where each electrical element is separated from a neighbouring electrical element by an intermediate region, each of the plurality of electrical elements comprising: a) a ceramic member; and b) first and second electrodes disposed adjacent the ceramic member such that a potential difference may be established between the first and second electrodes and through the ceramic member during operation; iii) a passivation layer, or a laminate of multiple passivation layers, at least partially overlying each of the plurality of electrical elements so as to provide electrical passivation between the first and second electrodes of each of the plurality of electrical elements; wherein the passivation layer, or at least an innermost layer of the laminate of passivation layers which is disposed adjacent each underlying electrical element, is discontinuous over at least one intermediate region between neighbouring electrical elements of the electrical component.

7. 发明申请

US20210396612A1 SENSOR DEVICE 有权
公开(公告)号：US20210396612A1
公开(公告)日：2021-12-23
申请号：US17289532
申请日：2019-10-29
申请人： JOANNEUM RESEARCH Forschungsgesellschaft mbH , Alpen-Adria-Universität Klagenfurt
发明人： Stephan Johann Mühlbacher-Karrer , Hubert Zangl , Herbert Gold , Georg Jakopic , Andreas Tschepp
IPC分类号： G01L5/00 , G01L1/16 , G01D5/24 , H01L27/20 , H01L25/16
摘要： A sensor device comprising at least a first substrate, a capacitive sensor for recording the approach of an object, a piezoelectric sensor for recording a pressure, wherein the capacitive sensor is arranged on a first side of the first substrate and the piezoelectric sensor is arranged on a second side of the first substrate, wherein the second side is opposite the first side, or wherein the capacitive sensor and the piezoelectric sensor are arranged on the same side of the substrate.

8. 发明申请

US20210391382A1 INTEGRATED STRUCTURE OF CRYSTAL RESONATOR AND CONTROL CIRCUIT AND INTEGRATION METHOD THEREFOR 有权
公开(公告)号：US20210391382A1
公开(公告)日：2021-12-16
申请号：US17419666
申请日：2019-11-05
申请人： NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION (SHANGHAI BRANCH)
发明人： Xiaoshan QIN
IPC分类号： H01L27/20 , H03H3/02 , H03H9/05 , H03H9/10 , H03H9/17 , H03H9/19
摘要： An integrated structure of a crystal resonator with a control circuit and an integration method therefor. The crystal resonator is formed by first forming a lower cavity (120) in a device wafer (100) in which a control circuit is formed, forming a piezoelectric vibrator (200) on the device wafer (100) and then enclosing the piezoelectric vibrator (200) within an upper cavity (400) through forming a cap layer (420) using a planar fabrication process, The crystal resonator according to the present invention has a smaller size, which is help for reducing the power consumption thereof, and the crystal resonator is more easily integrated with other semiconductor components, thereby improving the integration of the device.

9. 发明授权

US11195985B2 Electroactive polymer actuator device and driving method 有权
公开(公告)号：US11195985B2
公开(公告)日：2021-12-07
申请号：US16306691
申请日：2017-06-12
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Achim Hilgers , Daan Anton Van Den Ende , Mark Thomas Johnson , Roland Alexander Van De Molengraaf
IPC分类号： H01L41/107 , H01L27/20 , C08L27/16 , H01L41/047 , H01L41/083 , H01L41/193
摘要： An actuator device has an electroactive polymer actuator and an integrated piezoelectric transformer. At least a secondary side of the integrated piezoelectric transformer shares a piezoelectric electroactive polymer layer with the electroactive polymer actuator, so that lower external voltages can be applied to the actuator device. A diode is connected between the secondary side of the integrated piezoelectric transformer and the electroactive polymer actuator.

10. 发明授权

US11194395B2 Display device and method of driving the same 有权
公开(公告)号：US11194395B2
公开(公告)日：2021-12-07
申请号：US16688837
申请日：2019-11-19
申请人： Samsung Display Co., Ltd.
发明人： Joon Hak Oh , Jae Been Lee , Byeong Hee Won
IPC分类号： G06F3/01 , H01L41/113 , H01L41/193 , H01L41/047 , H01L27/32 , G06F3/041 , G06F3/044 , H01L27/20
摘要： A display device includes a display panel, and a plurality of piezoelectric elements arranged on one surface of the display panel, wherein each of the plurality of piezoelectric elements includes a pressure sensor configured to detect pressure applied to a surface opposite to the one surface of the display panel, and a haptic device configured to generate vibration according to a driving voltage.

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