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    • 41. 发明授权
    • Management of links to data embedded in blocks of data
    • 管理数据嵌入数据的链接
    • US06954934B2
    • 2005-10-11
    • US09811060
    • 2001-03-15
    • Arvind Kumar
    • Arvind Kumar
    • G06F9/00G06F9/54G06F15/163G06F17/30
    • G06F17/30882
    • Management of links, such as URLs or other link formats, that have been embedded within blocks of data, such as data received by an E-mail application program, file transfer program, or other data transfer environment. When a block of data is received, an agent or other construct examines the block of data to identify links within the block of data. Meta-data associated with the link is extracted, and the link and associated meta-data is stored in a collective. The collective may be displayed and organized with a viewer. The viewer may be integral to an application program, such as an E-mail application program, or it may integral to an operating system, or it may be a standalone application program.
    • 已经嵌入在数据块内的诸如URL或其他链接格式的链接的管理,例如由电子邮件应用程序接收的数据,文件传输程序或其他数据传输环境。 当接收到数据块时,代理或其他结构检查数据块以识别数据块内的链路。 提取与链接相关联的元数据,并将链接和相关联的元数据存储在集合中。 集体可以用观众显示和组织。 观众可能是应用程序(例如电子邮件应用程序)的组成部分,或者它可能与操作系统集成,或者它可以是独立的应用程序。
    • 47. 发明授权
    • Low voltage single-input DRAM current-sensing amplifier
    • 低电压单输入DRAM电流检测放大器
    • US06370072B1
    • 2002-04-09
    • US09726377
    • 2000-11-30
    • Robert H. DennardArvind Kumar
    • Robert H. DennardArvind Kumar
    • G11C702
    • G11C7/067G11C7/18G11C11/4091G11C11/4097G11C2207/063G11C2207/2227
    • In a DRAM memory circuit, a current sensing amplifier is provided that exploits the low impedance of a reference transistor biased in the sub-threshold regime to enable transfer of a small voltage swing on the bitline to result in a large voltage signal on a low capacitance sense node. Compared to conventional voltage sensing, reduced bitline-bitline coupling noise results because of the small bitline swing, potentially allowing more cells to be served by a sense amplifier because of weak dependence of sense amplifier on bit-line capacitance. Compared to previous current-sensing schemes, this invention allows no idling current. The current-sensing amplifier additionally may be used in conjunction with a hierarchical bitline scheme to further increase the number of cells served by each sense amplifier.
    • 在DRAM存储器电路中,提供电流感测放大器,其利用偏置在子阈值状态中的参考晶体管的低阻抗,以使得能够在位线上传送小的电压摆幅,从而在低电容上产生较大的电压信号 感知节点。 与常规电压感测相比,​​由于位线摆幅小而导致位线位线耦合噪声减小,由于读出放大器对位线电容的弱依赖性,潜在地允许更多的单元由读出放大器提供服务。 与以前的电流检测方案相比,本发明不允许空载电流。 电流检测放大器另外可以与分层位线方案结合使用,以进一步增加由每个读出放大器服务的单元的数量。