专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US09905397B2 Ion implantation apparatus and scanning waveform preparation method 有权
公开(公告)号：US09905397B2
公开(公告)日：2018-02-27
申请号：US15457698
申请日：2017-03-13
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Shiro Ninomiya , Akihiro Ochi
IPC分类号： H01J37/00 , H01J37/317 , H01J37/08 , H01J37/147 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/1474 , H01J37/244 , H01J37/304 , H01J37/3172 , H01J2237/24535 , H01J2237/30488
摘要： An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

42. 发明授权

US09837248B2 Ion implantation apparatus and method of controlling ion implantation apparatus 有权
公开(公告)号：US09837248B2
公开(公告)日：2017-12-05
申请号：US14605404
申请日：2015-01-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Masahide Ooura , Daisuke Imai , Shiro Ninomiya
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： H01J37/3171 , H01J37/3002 , H01J2237/0206 , H01J2237/18 , H01J2237/304 , H01J2237/30472
摘要： In an ion implantation apparatus, an interruption member interrupts an ion beam B in the middle of a beam line. A plasma shower device is provided at the downstream side of the interruption member in the beam line. A control unit causes the interruption member to interrupt the ion beam B during an ignition start period of the plasma shower device. The interruption member may be provided at the upstream side of at least one high-voltage electric field type electrode in the beam line. A gas supply unit may supply a source gas to the plasma shower device. The control unit may start the supply of the source gas from the gas supply unit after the ion beam B is interrupted by the interruption member.

43. 发明申请

US20170271128A1 ION IMPLANTATION APPARATUS AND SCANNING WAVEFORM PREPARATION METHOD 有权
公开(公告)号：US20170271128A1
公开(公告)日：2017-09-21
申请号：US15457698
申请日：2017-03-13
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Shiro Ninomiya , Akihiro Ochi
IPC分类号： H01J37/317 , H01J37/147 , H01J37/244 , H01J37/08
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/1474 , H01J37/244 , H01J37/304 , H01J37/3172 , H01J2237/24535 , H01J2237/30488
摘要： An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

44. 发明申请

US20170271127A1 ION IMPLANTATION APPARATUS AND MEASUREMENT DEVICE 审中-公开
公开(公告)号：US20170271127A1
公开(公告)日：2017-09-21
申请号：US15461092
申请日：2017-03-16
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Kazuhisa Ishibashi
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/24405 , H01J2237/24528
摘要： An angle measurement device includes: a slit through which an ion beam is incident, and a width direction of which is orthogonal to a beam traveling direction of the ion beam toward a wafer; and a plurality of electrode bodies which are provided at positions away from the slit in the beam traveling direction, and each of which includes a beam measurement surface that is a region which is exposed to the ion beam having passed through the slit. The plurality of electrode bodies are disposed such that the beam measurement surfaces of the electrode bodies are arranged in order in the width direction of the slit and the beam measurement surfaces adjacent to each other in the width direction of the slit deviate from each other in the beam traveling direction.

45. 发明授权

US09520265B2 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US09520265B2
公开(公告)日：2016-12-13
申请号：US14558187
申请日：2014-12-02
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita
IPC分类号： H01J37/12 , H01J37/317 , H01J37/21
CPC分类号： H01J37/21 , H01J37/12 , H01J37/3171 , H01J2237/1415 , H01J2237/303 , H01J2237/30477
摘要： A multistage quadrupole lens system in an ion implantation apparatus includes a first quadrupole lens and a third quadrupole lens. A first bore radius of the first quadrupole lens may be smaller than a third bore radius of the third quadrupole lens. The multistage quadrupole lens system may further include a second quadrupole lens placed between the first quadrupole lens and the third quadrupole lens. A second bore radius of the second quadrupole lens may take a value lying between the first bore radius of the first quadrupole lens and the third bore radius of the third quadrupole lens (i.e., an intermediate value between them).
摘要翻译：离子注入装置中的多级四极透镜系统包括第一四极透镜和第四四极透镜。第一四极透镜的第一孔半径可以小于第三四极透镜的第三孔半径。多级四极透镜系统还可以包括放置在第一四极透镜和第三四极透镜之间的第二四极透镜。第二四极透镜的第二孔半径可以取位于第一四极透镜的第一孔半径和第三四极透镜的第三孔半径之间的值（即它们之间的中间值）。

46. 发明授权

US09502759B2 Antenna cover and plasma generating device using same 有权
标题翻译：天线罩和使用其的等离子体发生装置
公开(公告)号：US09502759B2
公开(公告)日：2016-11-22
申请号：US14566133
申请日：2014-12-10
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Shiro Ninomiya , Masateru Sato
IPC分类号： H01Q1/26 , H01Q1/40 , H05H1/46 , H01J37/32 , H01Q1/42 , H01Q7/00
CPC分类号： H01Q1/40 , H01J37/321 , H01J37/3211 , H01Q1/42 , H01Q1/421 , H01Q7/00 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： An antenna cover that protects a surface of an antenna provided in a plasma chamber and exciting an electric field with a high frequency to an inner portion of the plasma chamber is provided. In the antenna cover, the thickness of the antenna cover in at least one direction among directions orthogonal to the surface of the antenna is different according to a position on the surface, such that space dependency of an electric potential on an external surface of the antenna cover decreases. In the antenna cover, the thickness of at least one direction may be changed along an extension direction of the antenna.
摘要翻译：提供了一种天线罩，其保护设置在等离子体室中的天线的表面并激发高频电场到等离子体室的内部。在天线罩中，根据天线的表面位置，与天线表面正交的方向中的至少一个方向的天线罩的厚度不同，使得天线的外表面上的电位的空间依赖性覆盖减少。在天线罩中，沿着天线的延伸方向可以改变至少一个方向的厚度。

47. 发明授权

US09449791B2 Beam irradiation apparatus and beam irradiation method 有权
标题翻译：光束照射装置和光束照射方法
公开(公告)号：US09449791B2
公开(公告)日：2016-09-20
申请号：US14736928
申请日：2015-06-11
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Mitsukuni Tsukihara , Noriyasu Ido , Noriyuki Suetsugu
IPC分类号： H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/31701 , H01J2237/31703
摘要： Provided is a beam irradiation apparatus including: a beam scanner that is configured such that a charged particle beam is reciprocatively scanned in a scanning direction; a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; and a data processor that calculates effective irradiation emittance of the charged particle beam using results measured by the measurement device. The measurement device measures a time dependent value for angular distribution of the charged particle beam. The data processor transforms time information included in the time dependent value for the angular distribution to position information and thus calculates the effective irradiation emittance. The effective irradiation emittance represents emittance of a virtual beam bundle, the virtual beam bundle being formed by summing portions of the charged particle beam which are incident into the region of the measurement target.
摘要翻译：本发明提供一种束照射装置，包括：束扫描器，被配置为使得带电粒子束沿扫描方向往复扫描; 测量装置，其能够测量入射到测量对象的区域中的带电粒子的角分量; 以及使用由测量装置测量的结果计算带电粒子束的有效照射发射率的数据处理器。测量装置测量带电粒子束的角度分布的时间依赖值。数据处理器将角分布的时间相关值中包含的时间信息变换为位置信息，从而计算有效的照射发射率。有效辐射发射率表示虚拟束束的发射率，虚拟束束是通过对入射到测量目标区域的带电粒子束的部分进行求和而形成的。

48. 发明授权

US09318298B2 Ion generator and ion generating method 有权
标题翻译：离子发生器和离子发生方法
公开(公告)号：US09318298B2
公开(公告)日：2016-04-19
申请号：US14536946
申请日：2014-11-10
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Masateru Sato
IPC分类号： G21K5/00 , H01J27/08 , H01J37/08 , H01J37/317
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/31705
摘要： An ion generator is provided with: an arc chamber that is at least partially made up of a material containing carbon; a thermal electron emitter that emits thermal electrons into the arc chamber; and a gas introducer that introduces a source gas and a compound gas into the arc chamber. The source gas to be introduced into the arc chamber contains a halide gas, and the compound gas to be introduced into the arc chamber contains a compound having carbon atoms and hydrogen atoms.
摘要翻译：离子发生器具有：至少部分由含碳材料组成的电弧室; 将热电子发射到电弧室中的热电子发射体; 以及将源气体和复合气体引入电弧室的气体导入器。被引入电弧室的源气体含有卤化物气体，导入电弧室的化合物气体含有具有碳原子和氢原子的化合物。

49. 发明授权

US09236222B2 Ion implantation apparatus and ion implantation method 有权
标题翻译：离子注入装置和离子注入方法
公开(公告)号：US09236222B2
公开(公告)日：2016-01-12
申请号：US14732239
申请日：2015-06-05
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita , Mitsuaki Kabasawa
IPC分类号： H01J37/317 , H01J37/147 , H01J37/10
CPC分类号： H01J37/3171 , H01J37/147 , H01J37/1474
摘要： An ion implantation apparatus includes a beam scanning unit and a beam parallelizing unit arranged downstream thereof. The beam scanning unit has a scan origin in a central part of the scanning unit on a central axis of an incident ion beam. The beam parallelizing unit has a focal point of a parallelizing lens at the scan origin. The ion implantation apparatus is configured such that a focal position of the incident beam into the scanning unit is located upstream of the scan origin along the central axis of the incident beam. The focal position of the incident beam into the scanning unit is adjusted to be at a position upstream of the scan origin along the central axis of the incident beam such that a divergence phenomenon caused by the space charge effect in an exiting ion beam from the parallelizing unit is compensated.
摘要翻译：离子注入装置包括光束扫描单元和布置在其下游的光束并行化单元。光束扫描单元在入射离子束的中心轴上的扫描单元的中心部分具有扫描原点。光束平行化单元具有在扫描原点处的平行化透镜的焦点。离子注入装置被构造成使得入射到扫描单元中的入射光束的焦点位置沿着入射光束的中心轴线位于扫描原点的上游。将入射光束到扫描单元中的焦点位置被调整为沿着入射光束的中心轴的扫描原点的上游位置，使得由离开的离子束中的空间电荷效应引起的发散现象来自并联单位得到补偿。

50. 发明申请

US20150364299A1 ION IMPLANTATION APPARATUS AND CONTROL METHOD FOR ION IMPLANTATION APPARATUS 有权
标题翻译：离子植入装置和离子植入装置的控制方法
公开(公告)号：US20150364299A1
公开(公告)日：2015-12-17
申请号：US14740928
申请日：2015-06-16
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Yoshito Fujii , Tetsuya Kudo , Shinji Ebisu , Suguru Hirokawa , Keiji Okada
IPC分类号： H01J37/317 , H01J37/20
CPC分类号： H01J37/3171 , H01J37/185 , H01J37/20 , H01J2237/202 , H01J2237/31701
摘要： Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.
摘要翻译：提供了一种离子注入装置，包括：真空处理室，其中执行晶片的离子注入工艺; 用于将晶片带入真空处理室并从真空处理室取出晶片的一个或多个负载锁定室; 设置成与真空处理室和负载锁定室相邻设置的中间输送室; 负载锁定室 - 中间输送室连通机构，包括能够密封负载锁定室 - 中间输送室连通口的闸阀; 以及中间输送室 - 真空处理室连通机构，其包括能够屏蔽中间输送室 - 真空处理室连通口的一部分或全部的可动屏蔽板。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式