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1. 发明申请

US20170125214A1 ION IMPLANTATION TOOL AND ION IMPLANTATION METHOD 有权
公开(公告)号：US20170125214A1
公开(公告)日：2017-05-04
申请号：US14925875
申请日：2015-10-28
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Sheng-Wei LEE
IPC分类号： H01J37/317 , H01J37/147 , H01J37/20 , H01L21/265
CPC分类号： H01J37/3172 , H01J37/147 , H01J37/20 , H01J37/3171 , H01J2237/30433 , H01J2237/30455 , H01J2237/31703 , H01J2237/31706 , H01L21/265
摘要： An ion implantation tool includes a process chamber, a platen, an ion source, and a plurality of controlling units. The platen is present in the process chamber and configured to hold a wafer. The ion source is configured to provide an ion beam onto the wafer. The controlling units are present on the platen and configured to apply a plurality of physical fields that are able to affect motions of ions of the ion beam onto the wafer.

2. 发明授权

US09583309B1 Selective area implant of a workpiece 有权
标题翻译：工件的选择性区域植入
公开(公告)号：US09583309B1
公开(公告)日：2017-02-28
申请号：US14972602
申请日：2015-12-17
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Jordan B. Tye , Mark R. Amato
IPC分类号： H01J37/317 , H01L21/265 , H01L21/683
CPC分类号： H01J37/3171 , H01J2237/31703 , H01L21/26506 , H01L21/68764
摘要： Apparatus and methods for the selective implanting of the outer portion of a workpiece are disclosed. A mask is disposed between the ion beam and the workpiece, having an aperture through which the ion beam passes. The aperture may have a concave first edge, forming using a radius equal to the inner radius of the outer portion of the workpiece. Further, the mask is affixed to a roplat such that the platen is free to rotate between a load/unload position and an operational position without moving the mask. In certain embodiments, the mask is affixed to the base of the roplat and has a first portion with an aperture that extends vertically upward from the base, and a second portion that is shaped so as not to interfere with the rotation of the platen. In other embodiments, the mask may be affixed to the arms of the roplat.
摘要翻译：公开了用于选择性地植入工件的外部部分的装置和方法。掩模设置在离子束和工件之间，具有离子束通过的孔。孔可以具有凹形的第一边缘，使用等于工件的外部部分的内半径的半径进行成形。此外，掩模被固定到罗盘，使得压板在加载/卸载位置和操作位置之间自由旋转而不移动掩模。在某些实施例中，掩模被固定到罗盘的基部，并且具有第一部分，其具有从基部垂直向上延伸的孔，以及第二部分，其被成形为不干涉压板的旋转。在其它实施例中，面罩可以固定到罗盘的臂上。

3. 发明申请

US20160071691A1 A METHOD FOR MONITORING ION IMPLANTATION 有权
标题翻译：一种用于监测离子植入的方法
公开(公告)号：US20160071691A1
公开(公告)日：2016-03-10
申请号：US14437046
申请日：2014-12-05
申请人： BOE Technology Group Co., Ltd.
发明人： Hui TIAN
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： H01J37/3005 , H01J37/3171 , H01J2237/2445 , H01J2237/31703 , H01J2237/31705 , H01J2237/31711
摘要： A method for monitoring ion implantation, comprising: a), providing a control piece and forming a mask layer; b), performing ion implantation process to implant a predetermined dose of impurity ions into the control piece, an area on the control piece uncovered by the mask layer being an impurity implantation area and an area on the control piece covered by the mask layer being an impurity non-implantation area; c), peeling off the mask layer from the control piece; d), performing oxidation treatment on the control piece; and e), respectively measuring thicknesses of the oxide layers on the impurity implantation area and the impurity non-implantation area of the control piece, and monitoring the impurity dose of the ion implantation on the basis of a ratio of the thickness of the oxide layer in the impurity implantation area to the thickness of the oxide layer in the impurity non-implantation area. By this method, it is possible to accurately monitor whether or not the dose of the implanted ions meets the predetermined requirement, and it is possible to effectively avoid the defects of incorrect monitor result caused by the variation of the intrinsic resistance of the semiconductor, improve the accuracy of the monitoring, and thus improve the performance and yield rate of the device.
摘要翻译：一种用于监测离子注入的方法，包括：a）提供控制件并形成掩模层; b），执行离子注入工艺以将预定剂量的杂质离子注入到控制件中，由掩模层未覆盖的作为杂质注入区域的控制片上的区域和由掩模层覆盖的控制片上的区域是杂质非植入区; c）从掩模层剥离掩模层; d）对控制件执行氧化处理; 和e），分别测量所述杂质注入区域上的氧化物层的厚度和所述控制件的杂质非注入区域，并且基于所述氧化物层的厚度的比率来监测所述离子注入的杂质剂量在杂质注入区域中的杂质非注入区域中的氧化物层的厚度。通过该方法，可以准确地监视注入离子的剂量是否满足规定的要求，能够有效地避免半导体固有电阻的变化引起的监视结果不正确的缺陷，提高监控的准确性，从而提高设备的性能和产出率。

4. 发明授权

US09230776B2 Ion irradiation apparatus and ion irradiation method 有权
标题翻译：离子照射装置和离子照射方法
公开(公告)号：US09230776B2
公开(公告)日：2016-01-05
申请号：US14596311
申请日：2015-01-14
申请人： NISSIN ION EQUIPMENT CO., LTD.
发明人： Takeshi Matsumoto , Koichi Orihira , Masatoshi Onoda
IPC分类号： H01J37/317 , H01J37/30 , H01J37/244 , H01J37/20
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/244 , H01J37/3007 , H01J2237/31703
摘要： An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.
摘要翻译：提供了一种离子照射装置。离子照射装置包括支撑构件，测量装置和控制装置。支撑构件大于衬底。测量装置沿离子束的行进方向向前设置。离子照射装置在第一模式下工作，在第一模式中，当基板在与离子束交叉之后未被离子束照射时，在被部分被支撑构件屏蔽之后照射剩余部分的离子束; 以及第二模式，在该过程中当离子束穿过离子束之后，用离子束照射测量装置而不被支撑构件屏蔽。控制装置控制基板，使得在处理期间至少一次在第一模式中执行离子处理过程。

5. 发明申请

US20150262790A1 ION IRRADIATION APPARATUS AND ION IRRADIATION METHOD 有权
标题翻译：离子辐射装置和离子辐照方法
公开(公告)号：US20150262790A1
公开(公告)日：2015-09-17
申请号：US14596311
申请日：2015-01-14
申请人： NISSIN ION EQUIPMENT CO., LTD.
发明人： Takeshi MATSUMOTO , Koichi ORIHIRA , Masatoshi ONODA
IPC分类号： H01J37/317 , H01J37/30 , H01J37/20 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/244 , H01J37/3007 , H01J2237/31703
摘要： An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.
摘要翻译：提供了一种离子照射装置。离子照射装置包括支撑构件，测量装置和控制装置。支撑构件大于衬底。测量装置沿离子束的行进方向向前设置。离子照射装置在第一模式下工作，在第一模式中，当基板在与离子束交叉之后未被离子束照射时，在被部分被支撑构件屏蔽之后照射剩余部分的离子束; 以及第二模式，在该过程中当离子束穿过离子束之后，用离子束照射测量装置而不被支撑构件屏蔽。控制装置控制基板，使得在处理期间至少一次在第一模式中执行离子处理过程。

6. 发明授权

US08906708B2 Method for checking ion implantation condition and method for manufacturing semiconductor wafer 有权
标题翻译：用于检查离子注入条件的方法和用于制造半导体晶片的方法
公开(公告)号：US08906708B2
公开(公告)日：2014-12-09
申请号：US13638792
申请日：2011-03-28
申请人： Isao Yokokawa
发明人： Isao Yokokawa
IPC分类号： H01L21/66 , H01L21/265 , H01J37/30 , H01J37/317
CPC分类号： H01L21/265 , H01J37/3005 , H01J37/3171 , H01J2237/2445 , H01J2237/31703 , H01L22/12
摘要： A method for checking an ion implantation condition when ions are implanted over an entirety of one surface of a semiconductor wafer having an insulator film on the one surface, the method including checking whether the ions are implanted over the entirety of the one surface of the semiconductor wafer by directly or indirectly observing light emitted when the one surface of the semiconductor wafer is irradiated with an ion beam of the implanted ions throughout the ion implantation.
摘要翻译：一种表面上具有绝缘膜的半导体晶片的整个表面上离子注入离子注入条件的方法，该方法包括检查离子是否被注入到半导体的整个表面上晶片通过直接或间接观察在半导体晶片的一个表面在离子注入期间被注入的离子的离子束照射时发出的光。

7. 发明授权

US08895945B2 Dose measurement device for plasma-immersion ion implantation 有权
标题翻译：用于等离子体浸没离子注入的剂量测量装置
公开(公告)号：US08895945B2
公开(公告)日：2014-11-25
申请号：US13701291
申请日：2011-06-01
申请人： Frank Torregrosa , Laurent Roux
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： G21K5/04 , H01J37/32 , H01J37/244 , G01T1/02
CPC分类号： G01T1/02 , H01J37/244 , H01J37/32412 , H01J37/32422 , H01J37/32935 , H01J2237/24405 , H01J2237/2448 , H01J2237/31703
摘要： The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.
摘要翻译：本发明涉及一种用于离子注入的剂量测量装置，该装置包括用于估计注入电流的模块CUR，二次电子检测器DSE和用于通过将所述注入电流和来自所述二次电子检测器的电流。此外，所述高能二次电子检测器包括：收集器COL，P，其支承正好三个相互绝缘的电极：第一斥力电极G1，A1，T1，用于排斥预定符号的待排斥电荷，所述电极设置在用于通过电子的至少一个孔口; 第二排斥电极G2，A2，T2，用于排斥相反符号的要排斥的电荷，所述电极还设置有至少一个用于通过电子的孔口; 以及选择电极G3，A3，T3，该电极还设置有用于使电子通过的至少一个孔。

8. 发明授权

US08791433B2 Ion implanting apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US08791433B2
公开(公告)日：2014-07-29
申请号：US13096280
申请日：2011-04-28
申请人： Tsutomu Nishihashi , Kazuhiro Watanabe , Tadashi Morita , Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki
发明人： Tsutomu Nishihashi , Kazuhiro Watanabe , Tadashi Morita , Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki
IPC分类号： G21G1/00
CPC分类号： G11B5/85 , H01J37/244 , H01J37/3171 , H01J2237/24585 , H01J2237/31703
摘要： An ion implanting apparatus is provided, which can accurately measure a quantity of atoms that are implanted. The ion implanting apparatus according to the present invention has an object to be measured, and the object to be measured is arranged in an irradiating range in which ions are irradiated. When atoms are implanted into an object to be processed by irradiating ions of a processing gas and neutralized particles thereof, the object to be measured is heated through the irradiation with the processing gas ions and the neutralized particles. A control unit determines a quantity of the atoms that are implanted into the object to be processed from the temperature of the object to be measured.
摘要翻译：提供离子注入装置，其可以精确地测量植入的原子的量。根据本发明的离子注入装置具有待测量的目的，并且被测量对象被布置在照射离子的照射范围内。当通过照射处理气体的离子和其中和颗粒将原子注入待处理物体时，通过用处理气体离子和中和的颗粒的照射来加热被测量物体。控制单元根据被测量物体的温度确定被植入物体的原子数量。

9. 发明授权

US08759801B2 Ion implantation apparatus and ion implantation method 有权
标题翻译：离子注入装置和离子注入方法
公开(公告)号：US08759801B2
公开(公告)日：2014-06-24
申请号：US13653211
申请日：2012-10-16
申请人： SEN Corporation
发明人： Shiro Ninomiya , Mitsukuni Tsukihara , Tetsuya Kudo , Tatsuya Yamada
IPC分类号： G21K5/04 , H01J37/26 , H01J37/317
CPC分类号： H01J37/26 , H01J37/3023 , H01J37/304 , H01J37/317 , H01J37/3171 , H01J2237/18 , H01J2237/30472 , H01J2237/31701 , H01J2237/31703
摘要： During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.
摘要翻译：在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。

10. 发明申请

US20130280823A1 Apparatus for Monitoring Ion Implantation 审中-公开
标题翻译：监测离子注入的装置
公开(公告)号：US20130280823A1
公开(公告)日：2013-10-24
申请号：US13918731
申请日：2013-06-14
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Lin Chang , Chih-Hong Hwang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01L21/66
CPC分类号： H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
摘要： An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second senor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second senor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.
摘要翻译：用于监测晶片的离子分布的装置包括第一传感器和传感器。将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。控制器基于来自第一传感器和第二传感器的检测信号确定晶片的每个区域的离子剂量。此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。

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