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41. 发明授权

US10559618B2 Methods and apparatus for an image sensor 有权
公开(公告)号：US10559618B2
公开(公告)日：2020-02-11
申请号：US15408839
申请日：2017-01-18
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Swarnal Borthakur
IPC分类号： H01L27/146
摘要： Various embodiments of the present technology may comprise a method and apparatus for an image sensor. The image sensor may comprise a color filter with a convex surface and a corresponding underlying dielectric element. The convex surface of the color filter is parallel to a convex surface of the dielectric element, wherein the convex shape of the color filter is substantially equal to the convex shape of the dielectric element.

42. 发明授权

US10510787B2 Structures and methods of creating clear pixels 有权
公开(公告)号：US10510787B2
公开(公告)日：2019-12-17
申请号：US15787959
申请日：2017-10-19
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Swarnal Borthakur , Nathan Wayne Chapman , Brian Anthony Vaartstra
IPC分类号： H01L27/146
摘要： An image sensor may include an array of pixels having a color filter layer. The color filter layer may include colored elements and clear elements. The clear elements may be formed from transparent dielectric material. The color filter layer may include a grid of light-blocking material that forms color filter container structures having an array of openings in which the colored elements and the clear elements are formed. The color filter container structures may be formed from the same transparent dielectric material that forms the clear elements. The color filter container structures may be formed from opaque materials or transparent materials that form structures such as planarization layers, microlenses, or antireflection coatings for the array of pixels. The material used to form the color filter container structures may have a refractive index that is sufficiently high to prevent light from passing between adjacent elements in the color filter layer.

43. 发明授权

US10432883B1 Backside illuminated global shutter pixels 有权
公开(公告)号：US10432883B1
公开(公告)日：2019-10-01
申请号：US16005887
申请日：2018-06-12
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Nathan Wayne Chapman , Swarnal Borthakur , Marc Allen Sulfridge
IPC分类号： H04N5/3745 , H04N5/232 , H01L27/146 , H01L25/16
摘要： Global shutter imaging pixels may include a charge storage region that receives charge from a respective photodiode. Global shutter imaging pixels may be formed as frontside illuminated imaging pixels or backside illuminated imaging pixels. Shielding charge storage regions from incident light may be important for image sensor performance. To shield charge storage regions in backside illuminated global shutter imaging pixels, shielding structures may be included over the charge storage region. The shielding structures may include backside trench isolation structures, a metal layer formed in a backside trench between backside trench isolation structures, and frontside deep trench isolation structures. The metal layer may have angled portions that reflect light towards the photodiodes.

44. 发明授权

US10312279B2 High dynamic range pixel with in-pixel light shield structures 有权
公开(公告)号：US10312279B2
公开(公告)日：2019-06-04
申请号：US15799833
申请日：2017-10-31
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Swarnal Borthakur , Marc Allen Sulfridge
IPC分类号： H01L31/062 , H01L27/146
摘要： Multi-photodiode image pixels may include sub-pixels with differing light sensitivities. Microlenses may be formed over the multi-photodiode image pixels so that light sensitivity of sub-pixels in an outer group of sub-pixels is enhanced. To prevent high angle light incident upon one of the sub-pixels of the image pixel from generating charges in a photosensitive region of another sub-pixel of the image pixel, intra-pixel isolation structures may be formed. Intra-pixel isolation structures may surround, and in some embodiments, overlap the light collecting region of an inner photodiode. When the intra-pixel isolation structures have a different index of refraction than light filtering material formed adjacent to the isolation structures, high angle light incident upon the isolation structures may be reflected back into the sub-pixel it was initially incident upon. Intra-pixel isolation structures may be formed entirely from optically transparent materials or a combination of optically transparent and opaque materials.

45. 发明授权

US10217783B2 Methods for forming image sensors with integrated bond pad structures 有权
公开(公告)号：US10217783B2
公开(公告)日：2019-02-26
申请号：US14681238
申请日：2015-04-08
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Swarnal Borthakur , Ulrich Boettiger
IPC分类号： H01L27/146 , H04N9/04
摘要： An imaging system may include an image sensor die, which may be backside illuminated (BSI). A light shielding layer and a conductive layer may be formed in the image sensor die. First and second portions of the conductive layer may be electrically isolated, so that the second conductive portion may be coupled to other power supply signals through a bond pad region, while the light shield may be shorted to ground. Optionally, the first and second portions may both be coupled to ground. The light shield may also be shorted through the bond pad region in a continuous conductive layer. A through oxide via may be formed in the image sensor die to couple metal interconnect structures to the conductive layer. Color filter containment structures may be formed over active image sensor pixels on the image sensor die, which may be selectively etched to improve planarity.

46. 发明授权

US10015416B2 Imaging systems with high dynamic range and phase detection pixels 有权
公开(公告)号：US10015416B2
公开(公告)日：2018-07-03
申请号：US15162914
申请日：2016-05-24
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Swarnal Borthakur , Ulrich Boettiger
IPC分类号： H04N5/355 , H01L27/146 , H04N5/369 , G02B13/00
CPC分类号： H04N5/355 , G01B11/24 , G02B13/0045 , H01L27/14627 , H04N5/23212 , H04N5/35563 , H04N5/3696 , H04N9/045 , H04N2209/045
摘要： An image sensor may have a pixel array, and the pixel array may include a plurality of image pixels that gather image data and a plurality of phase detection pixels that gather phase information. The phase detection pixels may be arranged in phase detection pixel blocks, and each phase detection pixel group may include edge pixels. The edge pixels of each phase detection pixel group may be covered by microlenses that also cover a portion of a center pixel. The pixel array may also include high dynamic range pixel blocks. Each high dynamic range pixel block may include pixels within the phase detection pixel block and other pixels (e.g., corner pixels). A subset of the plurality of image pixels in the pixel array may be arranged in pixel blocks. Each pixel block may include a phase detection pixel block and a high dynamic range pixel block.

47. 发明申请

US20160111463A1 CIRCUITRY FOR BIASING LIGHT SHIELDING STRUCTURES AND DEEP TRENCH ISOLATION STRUCTURES 有权
标题翻译：偏光屏蔽结构和深层隔离结构的电路
公开(公告)号：US20160111463A1
公开(公告)日：2016-04-21
申请号：US14518862
申请日：2014-10-20
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Swarnal Borthakur , Marc Sulfridge
IPC分类号： H01L27/146 , H04N5/238 , H04N5/235 , H04N5/335 , H04N5/369
CPC分类号： H01L27/14623 , H01L27/1462 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H04N5/2354 , H04N5/238 , H04N5/335 , H04N5/3698
摘要： An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. The image sensor die may include light shielding structures for preventing reference photodiodes in the image sensor die from receiving light and in-pixel grid structures for preventing cross-talk between adjacent pixels. The light shielding structure may receive a desired biasing voltage through a corresponding TOV, an integral plug structure, and/or a connection that makes contact directly with a polysilicon gate. The in-pixel grid may have a peripheral contact that receives the desired biasing voltage through a light shield, a conductive strap, a TOV, and/or an aluminum pad.
摘要翻译：成像系统可以包括堆叠在数字信号处理器（DSP）管芯的顶部上的图像传感器管芯。可以在图像传感器管芯中形成贯通氧化物通孔（TOV），并且可以至少部分地延伸到DSP管芯中以促进图像传感器管芯和DSP管芯之间的通信。图像传感器管芯可以包括用于防止图像传感器管芯中的参考光电二极管接收光和像素间栅格结构以防止相邻像素之间的串扰的遮光结构。光屏蔽结构可以通过相应的TOV，整体插塞结构和/或直接与多晶硅栅极接触的连接来接收期望的偏置电压。像素内栅格可以具有通过光屏蔽，导电带，TOV和/或铝垫接收期望的偏置电压的外围接触。

48. 发明授权

US09293495B2 Imaging circuitry with robust scribe line structures 有权
标题翻译：具有强大划线结构的成像电路
公开(公告)号：US09293495B2
公开(公告)日：2016-03-22
申请号：US14270236
申请日：2014-05-05
申请人： Semiconductor Components Industries, LLC
发明人： Swarnal Borthakur , Marc Sulfridge , Mitchell J. Mooney
IPC分类号： H01L27/146 , H04N5/369
CPC分类号： H01L27/14632 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L27/1469 , H04N5/3692
摘要： An image sensor wafer may be stacked on top of a digital signal processor (DSP) wafer. The image sensor wafer may include multiple image sensor dies, whereas the DSP wafer may include multiple DSP dies. The stacked wafers may be cut along scribe line regions to dice the wafers into individual components. Each image sensor die may include through-oxide vias (TOVs) that extend at least partially into a corresponding DSP die. Scribe line support structures may be formed surrounding the scribe line regions. The scribe line support structures and the TOVs may be formed during the same processing step. The TOVs can also be formed through deep trench isolation structures.
摘要翻译：图像传感器晶片可以堆叠在数字信号处理器（DSP）晶片的顶部。图像传感器晶片可以包括多个图像传感器管芯，而DSP晶片可以包括多个DSP管芯。堆叠的晶片可以沿着划线区域切割以将晶片切割成单独的部件。每个图像传感器管芯可以包括至少部分地延伸到对应的DSP管芯中的贯通氧化物通孔（TOV）。可以在划线区域周围形成划线支撑结构。可以在相同的处理步骤期间形成划线支撑结构和TOV。 TOV也可以通过深沟槽隔离结构形成。

49. 发明授权

US09269743B2 Methods of forming imaging device layers using carrier substrates 有权
标题翻译：使用载体基板形成成像装置层的方法
公开(公告)号：US09269743B2
公开(公告)日：2016-02-23
申请号：US14086336
申请日：2013-11-21
申请人： Semiconductor Components Industries, LLC
发明人： Ulrich Boettiger , Swarnal Borthakur , Andrew Perkins
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/14621
摘要： An array of color filter elements may be formed over an array of photodiodes in an integrated circuit for an imaging device using a carrier substrate. The carrier substrate may have a planar surface with a release layer. A layer of color filter material may be applied to the release layer. The carrier substrate may then be flipped and the layer of color filter material may be bonded to the integrated circuit. Heat may be applied to activate the release layer and the carrier substrate may be removed at the interface between the release layer and the color filter material. The layer of color filter material may be patterned either before bonding the layer of color filter material or after the carrier substrate is removed. A layer of microlenses may be formed over the array of color filter elements using a carrier substrate.
摘要翻译：可以在用于使用载体衬底的成像装置的集成电路中的光电二极管阵列上形成滤色器元件阵列。载体基底可以具有带有释放层的平坦表面。可以将一层滤色器材料施加到释放层。然后可以将载体衬底翻转，并且滤色器材料层可以结合到集成电路。可以施加热量以激活释放层，并且可以在剥离层和滤色器材料之间的界面处去除载体衬底。彩色滤光片材料层可以在结合滤色器材料层之前或在移除载体衬底之后进行图案化。可以使用载体衬底在彩色滤光器阵列的阵列上形成微透镜层。

50. 发明授权

US09024406B2 Imaging systems with circuit element in carrier wafer 有权
标题翻译：在载体晶片中具有电路元件的成像系统
公开(公告)号：US09024406B2
公开(公告)日：2015-05-05
申请号：US14035863
申请日：2013-09-24
申请人： Semiconductor Components Industries, LLC
发明人： Scott Churchwell , Marc Sulfridge , Swarnal Borthakur
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14621 , H01L27/14625 , H01L27/14685 , H01L27/1469
摘要： An imaging system may include an image sensor package with an image sensor wafer mounted on a carrier wafer, which may be a silicon substrate. A capacitor may be formed in the carrier wafer. Trenches may be etched in a serpentine pattern in the silicon substrate. Conductive plates of the capacitor may be formed at least partially in the trenches. An insulator material may be formed between the capacitor and the silicon substrate. A dielectric layer may be formed between the conductive plates of the capacitor. The image sensor package may be mounted on a printed circuit board via a ball grid array. Conductive vias may electrically couple the capacitor and the image sensor wafer to the printed circuit board.
摘要翻译：成像系统可以包括具有安装在可以是硅衬底的载体晶片上的图像传感器晶片的图像传感器封装。可以在载体晶片中形成电容器。可以在硅衬底中以蛇纹图案蚀刻沟槽。电容器的导电板可以至少部分地形成在沟槽中。可以在电容器和硅衬底之间形成绝缘体材料。可以在电容器的导电板之间形成电介质层。图像传感器封装可以经由球栅阵列安装在印刷电路板上。导电通孔可将电容器和图像传感器晶片电耦合到印刷电路板。

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