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41. 发明授权

US10224215B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US10224215B2
公开(公告)日：2019-03-05
申请号：US15332198
申请日：2016-10-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hideyuki Kishida
IPC分类号： H01L21/02 , H01L21/477 , H01L21/322 , H01L27/11521 , H01L27/1156 , H01L27/12 , H01L29/786 , G11C16/10 , G11C16/14 , G11C16/26 , H01L27/105 , H01L29/24 , H01L29/66 , G02F1/1368 , G02F1/1333 , G02F1/1343 , G02F1/137 , G09G3/36
摘要： An object of the present invention to provide a highly reliable semiconductor device. Another object is to provide a manufacturing method of a highly reliable semiconductor device. Still another object is to provide a semiconductor device having low power consumption. Yet another object is to provide a manufacturing method of a semiconductor device having low power consumption. Furthermore, another object is to provide a semiconductor device which can be manufactured with high mass productivity. Another object is to provide a manufacturing method of a semiconductor device which can be manufactured with high mass productivity. An impurity remaining in an oxide semiconductor layer is removed so that the oxide semiconductor layer is purified to have an extremely high purity. Specifically, after adding a halogen element into the oxide semiconductor layer, heat treatment is performed to remove an impurity from the oxide semiconductor layer. The halogen element is preferably fluorine.

42. 发明授权

US09893200B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US09893200B2
公开(公告)日：2018-02-13
申请号：US14972964
申请日：2015-12-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kengo Akimoto , Junichiro Sakata , Takuya Hirohashi , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga
IPC分类号： H01L29/04 , H01L29/786 , H01L29/66 , H01L21/02 , H01L21/28
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/28079 , H01L21/28158 , H01L29/04 , H01L29/66742 , H01L29/66969 , H01L29/78693
摘要： It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

43. 发明授权

US09443874B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09443874B2
公开(公告)日：2016-09-13
申请号：US14320742
申请日：2014-07-01
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
IPC分类号： H01L29/12 , H01L27/12 , H01L29/786 , H01L29/45 , H01L27/32
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/3262 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/78618
摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
摘要翻译：目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极。金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。

44. 发明授权

US08916870B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08916870B2
公开(公告)日：2014-12-23
申请号：US14305156
申请日：2014-06-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichiro Sakata , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/10 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/0847 , H01L29/1033 , H01L29/24 , H01L29/41733 , H01L29/42356 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

45. 发明申请

US20140312345A1 Semiconductor Device And Method For Manufacturing The Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140312345A1
公开(公告)日：2014-10-23
申请号：US14320742
申请日：2014-07-01
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
IPC分类号： H01L27/12
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/3262 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/78618
摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
摘要翻译：目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极。金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。

46. 发明申请

US20140284601A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20140284601A1
公开(公告)日：2014-09-25
申请号：US14297733
申请日：2014-06-06
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/417
CPC分类号： H01L29/7869 , H01L29/10 , H01L29/41733
摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.
摘要翻译：提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜，以及设置在金属氧化物膜上的金属膜。氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

47. 发明授权

US11715801B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US11715801B2
公开(公告)日：2023-08-01
申请号：US17687817
申请日：2022-03-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichiro Sakata , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/786 , H01L29/417 , H01L29/423 , H01L29/49 , H01L21/02 , H01L29/66 , H01L27/12 , H01L29/08 , H01L29/10 , H01L29/24
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/0847 , H01L29/1033 , H01L29/24 , H01L29/41733 , H01L29/42356 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696 , H01L21/02554
摘要： It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

48. 发明授权

US11011549B2 Thin film transistor, method for manufacturing the same, and semiconductor device 有权
公开(公告)号：US11011549B2
公开(公告)日：2021-05-18
申请号：US16809980
申请日：2020-03-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshikazu Kondo , Hideyuki Kishida
IPC分类号： H01L27/12 , H01L29/66 , H01L29/786 , H01L29/45 , H01L27/32 , H01L29/24 , H01L29/49 , H01L21/02 , H01L21/477
摘要： In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

49. 发明授权

US10700213B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US10700213B2
公开(公告)日：2020-06-30
申请号：US16353450
申请日：2019-03-14
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichiro Sakata , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/10 , H01L29/786 , H01L29/417 , H01L29/423 , H01L29/49 , H01L21/02 , H01L27/12 , H01L29/66 , H01L29/08 , H01L29/24
摘要： It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

50. 发明授权

US10586811B2 Thin film transistor, method for manufacturing the same, and semiconductor device 有权
公开(公告)号：US10586811B2
公开(公告)日：2020-03-10
申请号：US16151552
申请日：2018-10-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshikazu Kondo , Hideyuki Kishida
IPC分类号： H01L27/12 , H01L29/66 , H01L29/786 , H01L21/02 , H01L29/45 , H01L27/32 , H01L29/24 , H01L29/49 , H01L21/477
摘要： In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

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