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41. 发明授权

US08975115B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08975115B2
公开(公告)日：2015-03-10
申请号：US14148906
申请日：2014-01-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yuta Endo , Kosei Noda , Toshinari Sasaki
IPC分类号： H01L21/00 , H01L29/786 , H01L29/66 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/02164 , H01L21/02367 , H01L21/02565 , H01L21/02631 , H01L29/66742 , H01L29/78603 , H01L29/78618 , H01L29/7869
摘要： An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.
摘要翻译：使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层区域和氧化物半导体层的漏极区域。通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件特性可以制造。源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。

42. 发明授权

US08884651B2 Logic circuit and semiconductor device 有权
标题翻译：逻辑电路和半导体器件
公开(公告)号：US08884651B2
公开(公告)日：2014-11-11
申请号：US14073902
申请日：2013-11-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： H03K19/0175 , H03K19/094 , H03K3/00 , H03B1/00 , G09G3/32 , G09G3/20 , H01L29/786 , H01L27/12
CPC分类号： H01L27/1255 , G09G3/20 , G09G3/2092 , G09G3/3233 , G09G3/3291 , G09G3/36 , G09G3/3648 , G09G2300/0439 , G09G2300/08 , G09G2300/0842 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2310/08 , G11C19/184 , G11C19/28 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L29/7869 , H03K17/161 , H03K19/00315 , H03K19/096
摘要： To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.
摘要翻译：为了减小晶体管的漏电流，可以抑制逻辑电路的故障。逻辑电路包括晶体管，其包括具有沟道形成层的功能的氧化物半导体层，并且其中截止电流在沟道宽度中为每微米1×10-13A或更小。作为时钟信号的第一信号，第二信号和第三信号被输入作为输入信号。作为输出信号输出第四信号和第五信号，其电压状态根据输入的第一至第三信号而被设定。

43. 发明申请

US20140120660A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140120660A1
公开(公告)日：2014-05-01
申请号：US14148906
申请日：2014-01-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yuta Endo , Kosei Noda , Toshinari Sasaki
IPC分类号： H01L29/66 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/02164 , H01L21/02367 , H01L21/02565 , H01L21/02631 , H01L29/66742 , H01L29/78603 , H01L29/78618 , H01L29/7869
摘要： An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.
摘要翻译：使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层区域和氧化物半导体层的漏极区域。通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件特性可以制造。源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。

44. 发明申请

US20130294120A1 SWITCHING CONVERTER 有权
标题翻译：开关转换器
公开(公告)号：US20130294120A1
公开(公告)日：2013-11-07
申请号：US13875415
申请日：2013-05-02
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masumi Nomura , Kosei Noda
IPC分类号： H02M1/36
CPC分类号： H02M1/36 , H02M3/335 , H02M3/33507 , H02M3/33523 , H02M7/517 , H02M2001/0006
摘要： A switching converter in which deterioration and breakage can be suppressed is provided. A switching converter whose area can be reduced is provided. The switching converter includes a switch connected to a power supply portion; a transformer connected to the power supply portion; a first rectifying and smoothing circuit and a second rectifying and smoothing circuit each connected to at least the transformer; and a switching control circuit which is connected to the first rectifying and smoothing circuit and the second rectifying and smoothing circuit and which controls operation of the switch. The switching control circuit includes a control circuit controlling on/off of the switch and operation of a starter circuit; and the starter circuit controlling startup of the control circuit. The starter circuit includes a transistor and a resistor each including a wide-gap semiconductor.
摘要翻译：提供了可以抑制劣化和断裂的开关转换器。提供了可以减小面积的开关转换器。开关转换器包括连接到电源部分的开关; 连接到电源部分的变压器; 第一整流和平滑电路和第二整流和平滑电路，每个至少连接到变压器; 以及切换控制电路，其连接到第一整流平滑电路和第二整流平滑电路，并控制开关的动作。开关控制电路包括控制开关的开/关和控制起动电路的操作的控制电路; 以及启动电路，控制控制电路的启动。起动电路包括晶体管和各自包括宽间隙半导体的电阻器。

45. 发明申请

US20130256665A1 SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT 有权
标题翻译：半导体元件，半导体器件和半导体元件的制造方法
公开(公告)号：US20130256665A1
公开(公告)日：2013-10-03
申请号：US13803022
申请日：2013-03-14
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD
发明人： Toshihiko Takeuchi , Kosei Noda
IPC分类号： H01L29/04
CPC分类号： H01L29/04 , H01L29/4908 , H01L29/78618
摘要： To provide a semiconductor element in which generation of oxygen vacancies in an oxide semiconductor thin film can be suppressed. The semiconductor element has a structure in which, in a gate insulating film, the nitrogen content of regions which do not overlap with a gate electrode is higher than the nitrogen content of a region which overlaps with the gate electrode. A nitride film has an excellent property of preventing impurity diffusion; thus, with the structure, release of oxygen in the oxide semiconductor film, in particular, in the channel formation region, to the outside of the semiconductor element can be effectively suppressed.
摘要翻译：提供能够抑制氧化物半导体薄膜中的氧空位的产生的半导体元件。半导体元件具有这样的结构，其中在栅极绝缘膜中，与栅电极不重叠的区域的氮含量高于与栅电极重叠的区域的氮含量。氮化物膜具有防止杂质扩散的优异性能; 因此，通过该结构，可以有效地抑制氧化物半导体膜中的氧，特别是沟道形成区域中的氧向半导体元件的外部的释放。

46. 发明申请

US20130228782A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20130228782A1
公开(公告)日：2013-09-05
申请号：US13870027
申请日：2013-04-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
IPC分类号： H01L29/786
CPC分类号： H01L29/78606 , H01L23/5329 , H01L27/1225 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

47. 发明申请

US20130187152A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130187152A1
公开(公告)日：2013-07-25
申请号：US13742415
申请日：2013-01-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Yukie Suzuki , Kosei Noda , Yoshiaki Oikawa
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , H01L27/1225 , H01L29/4908 , H01L29/66969 , H01L29/78621 , H01L29/7869
摘要： A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.
摘要翻译：通过在氧化物半导体膜与金属膜接触的状态下进行热处理，将金属膜的金属元素引入到氧化物半导体膜中，使得具有低于沟道形成的电阻的低电阻区域形成区域。与氧化物半导体膜接触的金属膜的区域通过热处理成为金属氧化物绝缘膜。之后，去除不必要的金属膜。因此，可以在低电阻区域上形成金属氧化物绝缘膜。

48. 发明申请

US20130122963A1 Analog Circuit And Semiconductor Device 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US20130122963A1
公开(公告)日：2013-05-16
申请号：US13733291
申请日：2013-01-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L33/02 , H04R1/02
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

49. 发明授权

US11348949B2 Semiconductor device 有权
公开(公告)号：US11348949B2
公开(公告)日：2022-05-31
申请号：US16998032
申请日：2020-08-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hiroki Ohara , Toshinari Sasaki , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L27/00 , H01L29/00 , H01L27/12 , H01L29/786 , H01L29/51 , G02F1/1333 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L29/24
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

50. 发明申请

US20200381459A1 METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20200381459A1
公开(公告)日：2020-12-03
申请号：US16998032
申请日：2020-08-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hiroki Ohara , Toshinari Sasaki , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L27/12 , H01L29/786 , H01L29/51 , G02F1/1333 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L29/24
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

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