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41. 发明授权

US06486543B1 Packaged semiconductor device having bent leads 有权
标题翻译：具有弯曲引线的封装半导体器件
公开(公告)号：US06486543B1
公开(公告)日：2002-11-26
申请号：US09700631
申请日：2000-11-17
申请人： Masashi Sano , Nobuaki Suzuki , Shinishi Suzuki
发明人： Masashi Sano , Nobuaki Suzuki , Shinishi Suzuki
IPC分类号： H01L2306
CPC分类号： H01L33/486 , H01L21/565 , H01L23/3107 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L33/62 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/85181 , H01L2224/97 , H01L2924/00014 , H01L2924/01039 , H01L2924/01079 , H01L2924/12041 , H01L2924/12043 , H01L2924/13055 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/05599 , H01L2224/85399
摘要： A semiconductor device (X1) including a semiconductor chip (3), a first lead (1) connected to an electrode of the semiconductor chip (3), a second lead (2) connected to another electrode of the semiconductor chip (3), and a resin package (4) sealing the semiconductor chip (3), an inner terminal (10) of the first lead (1), and an inner terminal (20) of the second lead (2). The resin package (4) includes a first to a fourth side surfaces (41-44), an upper surface (47) and a bottom surface (45). Each of the first and the second leads (1, 2) includes at least one outer terminal (11, 21) extending along the first side surface (41) and the bottom surface (45) of the resin package (4).
摘要翻译：一种半导体器件（X1），包括半导体芯片（3），连接到半导体芯片（3）的电极的第一引线（1），连接到半导体芯片（3）的另一个电极的第二引线（2）以及密封半导体芯片（3），第一引线（1）的内部端子（10）和第二引线（2）的内部端子（20）的树脂封装（4）。树脂封装（4）包括第一至第四侧表面（41-44），上表面（47）和底表面（45）。第一和第二引线（1,2）中的每一个包括沿树脂封装（4）的第一侧表面（41）和底表面（45）延伸的至少一个外部端子（11,21）。

42. 发明授权

US06459099B1 Photointerrupter and case thereof 有权
标题翻译：光电断路器及其情况
公开(公告)号：US06459099B1
公开(公告)日：2002-10-01
申请号：US09806298
申请日：2001-03-29
申请人： Masashi Sano
发明人： Masashi Sano
IPC分类号： H01L2715
CPC分类号： H01L31/167
摘要： A case (3) of a photointerrupter (A) includes a pair of projections (35) for preventing a light source (1) and a photodetector (2) from coming out of a respective one of paired receiving portions (30). Each of the projections (35) is connected to a respective first wall (32A) defining the respective receiving portion (30) of the case on an extension line of a respective slit (34) for light transmission. Therefore, the case (3) need not be formed with a large slit other than the slit (34), so that disturbing external light is less likely to enter the receiving portions (30).
摘要翻译：光断路器（A）的情况（3）包括用于防止光源（1）和光电检测器（2）从成对的接收部分（30）中的相应一个出来的一对突起（35）。每个突起（35）连接到在相应狭缝（34）的延伸线上限定壳体的相应接收部分（30）的相应的第一壁（32A），用于光透射。因此，壳体（3）不需要形成有狭缝（34）以外的大的狭缝，所以不利的外部光不太可能进入容纳部30。

43. 发明授权

US06242801B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06242801B1
公开(公告)日：2001-06-05
申请号：US08750974
申请日：1997-01-02
申请人： Masashi Sano
发明人： Masashi Sano
IPC分类号： H01L2348
CPC分类号： H01L24/49 , H01L23/49503 , H01L23/49562 , H01L24/45 , H01L24/48 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49111 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01079 , H01L2924/12043 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： A semiconductor device includes a lead terminal that has an island at one end, a semiconductor element whose bottom surface is connected to the island, one or more wires that connect a top surface of the semiconductor element to the island, and a resin seal that seals in the semiconductor device and the wires. In the island, a cut is formed between a section on which one semiconductor element is mounted and a section on which the wires are bonded.
摘要翻译：半导体器件包括：一端具有岛状的引线端子，底面与岛连接的半导体元件，将半导体元件的上表面与岛连接的一根或多根导线以及密封在半导体器件和电线中。在该岛中，在其上安装有一个半导体元件的部分和与其接合的部分之间形成切口。

44. 发明授权

US5486925A Displacement sensing apparatus for a movable member 失效
标题翻译：用于可动件的位移检测装置
公开(公告)号：US5486925A
公开(公告)日：1996-01-23
申请号：US69772
申请日：1993-06-01
申请人： Masashi Sano , Tadayoshi Ogawa
发明人： Masashi Sano , Tadayoshi Ogawa
IPC分类号： G01D5/244 , G01D5/245 , G06F3/033 , G06F3/042 , G01B11/14 , G01B11/02
CPC分类号： G06F3/03543 , G01D5/24476 , G01D5/2451 , G06F3/0312 , G06F3/0421
摘要： A light receiving portion which receives light from a light emitting portion through slits formed in a rotating disc is provided with, first, second and third photodiodes. With an output of the second photodiode as a reference value, an output of the first photodiode is compared with the reference value and pulsed by a first comparator, and an output of the third photodiode is compared with the reference value and pulsed by a second comparator. With such a light receiving apparatus, since the output (reference value) of the second photodiode similarly decreases when the outputs of the first and third photodiodes decrease due to a decrease of the light quantity of the light emitting portion, the deviation of the phase difference never occurs between outputs of the first and second comparators.
摘要翻译：第一，第二和第三光电二极管设置有通过形成在旋转盘中的狭缝从发光部分接收光的光接收部分。利用第二光电二极管的输出作为参考值，将第一光电二极管的输出与参考值进行比较并由第一比较器脉冲，并将第三光电二极管的输出与参考值进行比较，并由第二比较器。利用这种光接收装置，由于第一和第三光电二极管的输出由于发光部分的光量的减少而减小，所以第二光电二极管的输出（参考值）同样地减小，相位差的偏差不会发生在第一和第二比较器的输出之间。

45. 发明授权

US08462469B1 Magneto-resistive effect element having FePt bias magnetic field application layer with Pt seed layer and MgO insulation layer 有权
标题翻译：具有FePt偏置磁场施加层的Pt电极和MgO绝缘层的电阻效应元件
公开(公告)号：US08462469B1
公开(公告)日：2013-06-11
申请号：US13463998
申请日：2012-05-04
申请人： Takayasu Kanaya , Masashi Sano
发明人： Takayasu Kanaya , Masashi Sano
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G01R33/093 , G11B5/398 , H01F10/123 , H01F10/30 , H01F10/3254 , H01F10/3272 , H01L43/08 , H01L43/12
摘要： A magneto-resistive effect (MR) element includes a magneto-resistive (MR) stack with a magnetization free layer, a bias magnetic field application layer positioned on a side of the MR stack, and an insulation film insulating the bias magnetic field application layer. The bias magnetic field application layer includes hard magnetic layer positioned on the side of the magnetization free layer and formed of iron-platinum (FePt) alloy and Pt seed layer provided between the MR stack and the hard magnetic layer and on a lower surface of the hard magnetic layer in contact manner with the hard magnetic layer and formed of platinum (Pt). The insulation film is a MgO insulation film formed of oxide magnesium (MgO), provided on a surface of the Pt seed layer in contact manner with the Pt seed layer, the surface being opposite to another surface of the Pt seed layer contacting the hard magnetic layer.
摘要翻译：磁阻效应（MR）元件包括具有无磁化层的磁阻（MR）堆叠，位于MR堆叠侧的偏置磁场施加层，以及将偏置磁场施加层。偏置磁场施加层包括位于磁化自由层侧面的硬磁性层，由铁 - 铂（FePt）合金和设置在MR堆叠和硬磁性层之间的Pt种子层和在硬磁层与硬磁层接触并由铂（Pt）形成。绝缘膜是由氧化镁（MgO）形成的MgO绝缘膜，其设置在与Pt种子层接触的Pt种子层的表面上，该表面与Pt种子层的与硬磁性体接触的另一表面相对层。

46. 发明授权

US08085491B2 Method of determining flying height of magnetic head 有权
公开(公告)号：US08085491B2
公开(公告)日：2011-12-27
申请号：US12659129
申请日：2010-02-26
申请人： Yosuke Antoku , Noboru Yamanaka , Masashi Sano , Kosuke Tanaka , Man Tse , Eric Cheuk Wing Leung , Luke Hung Leung Chung
发明人： Yosuke Antoku , Noboru Yamanaka , Masashi Sano , Kosuke Tanaka , Man Tse , Eric Cheuk Wing Leung , Luke Hung Leung Chung
IPC分类号： G11B2/21
CPC分类号： G11B5/6005 , G11B5/6064
摘要： For obtaining a flying height of a magnetic head from a magnetic disk, the magnetic head being placed in a slider arranged at an interval with the magnetic disk, an initial setting process and a flying height detecting process are performed. In the initial setting process, driving power to a heater is increased gradually, from a state where the heater arranged at a position in proximity to the magnetic head in the slider is not driven, until the magnetic head makes contact with the magnetic disk. Then, in each stage, an electrical resistance value of the sensor arranged at a position in proximity to the magnetic head in the slider, which is increased due to the heat from heater, and either an approach distance of the magnetic head toward the magnetic disk or the flying height of the magnetic head from the magnetic disk are acquired. Then, basic data is prepared by obtaining the relationship between a variation of the electrical resistance value of the sensor and the flying height of the magnetic head from the magnetic disk, which is obtained in each stage or which calculated from the approach distance in each stage. In the flying height detecting process, an electrical resistance value of the sensor is determined, and a variation of the electrical resistance value is calculated from the determined values. Then, the flying height of the magnetic head from the magnetic disk in the state where the electrical resistance value was determined is obtained based on the basic data obtained in the initial setting process, using the calculated variation of the electrical resistance value.

47. 发明申请

US20110211275A1 Method of determining flying height of magnetic head 有权
标题翻译：确定磁头飞行高度的方法
公开(公告)号：US20110211275A1
公开(公告)日：2011-09-01
申请号：US12659129
申请日：2010-02-26
申请人： Yosuke Antoku , Noboru Yamanaka , Masashi Sano , Kosuke Tanaka , Man Tse , Eric Cheuk Wing Leung , Luke Hung Leung Chung
发明人： Yosuke Antoku , Noboru Yamanaka , Masashi Sano , Kosuke Tanaka , Man Tse , Eric Cheuk Wing Leung , Luke Hung Leung Chung
IPC分类号： G11B21/02
CPC分类号： G11B5/6005 , G11B5/6064
摘要： For obtaining a flying height of a magnetic head from a magnetic disk, the magnetic head being placed in a slider arranged at an interval with the magnetic disk, an initial setting process and a flying height detecting process are performed. In the initial setting process, driving power to a heater is increased gradually, from a state where the heater arranged at a position in proximity to the magnetic head in the slider is not driven, until the magnetic head makes contact with the magnetic disk. Then, in each stage, an electrical resistance value of the sensor arranged at a position in proximity to the magnetic head in the slider, which is increased due to the heat from heater, and either an approach distance of the magnetic head toward the magnetic disk or the flying height of the magnetic head from the magnetic disk are acquired. Then, basic data is prepared by obtaining the relationship between a variation of the electrical resistance value of the sensor and the flying height of the magnetic head from the magnetic disk, which is obtained in each stage or which calculated from the approach distance in each stage. In the flying height detecting process, an electrical resistance value of the sensor is determined, and a variation of the electrical resistance value is calculated from the determined values. Then, the flying height of the magnetic head from the magnetic disk in the state where the electrical resistance value was determined is obtained based on the basic data obtained in the initial setting process, using the calculated variation of the electrical resistance value.
摘要翻译：为了从磁盘获得磁头的飞行高度，磁头被放置在与磁盘间隔设置的滑块中，执行初始设定处理和飞行高度检测处理。在初始设定处理中，从布置在滑动件附近的磁头的位置的加热器未被驱动的状态直到磁头与磁盘接触的状态逐渐增加到加热器的驱动电力。然后，在各阶段，布置在靠近滑块的磁头的位置处的传感器的电阻值由于来自加热器的热而增加，并且磁头朝向磁盘的接近距离或者从磁盘获取磁头的飞行高度。然后，通过获得传感器的电阻值的变化与来自磁盘的磁头的飞行高度之间的关系来准备基本数据，该关系是在每个阶段中获得的，或者由每个阶段中的接近距离计算。在飞行高度检测处理中，确定传感器的电阻值，并根据确定的值计算电阻值的变化。然后，使用计算出的电阻值的变化，基于在初始设定处理中获得的基本数据，求出在确定了电阻值的状态下磁头从磁盘的飞行高度。

48. 发明授权

US07508958B2 IC card access control method for biometrics authentication, biometrics authentication method, and biometrics authentication device 有权
标题翻译：用于生物特征认证的IC卡访问控制方法，生物识别认证方法和生物特征认证装置
公开(公告)号：US07508958B2
公开(公告)日：2009-03-24
申请号：US11169900
申请日：2005-06-30
申请人： Kiyotaka Awatsu , Takahiro Kudoh , Masashi Sano , Masanori Ohkoshi
发明人： Kiyotaka Awatsu , Takahiro Kudoh , Masashi Sano , Masanori Ohkoshi
IPC分类号： G06K9/00 , G06K9/54 , G06K7/01 , G05B19/00
CPC分类号： G06F21/32 , G06F21/34 , G07F19/20
摘要： A biometrics authentication device uses biometrics information to perform individual authentication, and securely registers biometrics information for an authorized agent other than the principal. Within an IC card, registered biometrics information of a principal is verified against biometrics information detected by a detection unit, and when biometrics authentication of the principal is satisfactory, access is permitted to modify data for an authorized agent in the IC card, so that biometrics information for the authorized agent can be securely modified in a card in which is registered biometrics information for the principal. Similarly, illicit modification access of a card in which is registered biometrics information of the principal by a person impersonating an authorized agent can be prevented.
摘要翻译：生物识别认证设备使用生物特征信息来执行个体认证，并且为委托人之外的授权代理安全地注册生物特征信息。在IC卡内，根据由检测单元检测到的生物特征信息验证委托人的登记生物识别信息，并且当委托人的生物特征认证令人满意时，允许访问修改IC卡中授权代理的数据，使得生物识别授权代理人的信息可以在其中为委托人的注册生物识别信息的卡中被安全地修改。类似地，可以防止假冒授权代理人的身份登记的委托书的生物特征信息的卡的非法修改访问。

49. 发明授权

US07274540B2 Magnetoresistive head having an MR element between a pair of shields and including first and second underlayers 有权
标题翻译：磁阻头在一对屏蔽之间具有MR元件并且包括第一和第二底层
公开(公告)号：US07274540B2
公开(公告)日：2007-09-25
申请号：US10967359
申请日：2004-10-19
申请人： Masashi Sano
发明人： Masashi Sano
IPC分类号： G11B5/39
CPC分类号： G11B5/3912
摘要： A magnetoresistive device includes a first shield layer and a second shield layer disposed at a specific distance from each other, an MR element disposed between the first and second shield layer, and an underlying layer disposed between the first shield layer and the MR element. The underlying layer, the MR element and the second shield layer are stacked on the first shield layer. The underlying layer includes a first layer having a bottom surface that is in contact with the first shield layer, and a second layer having a bottom surface that is in contact with a top surface of the first layer and a top surface that is adjacent to the MR element with a conductive layer disposed in between. The first layer is made of a material including at least one of Ta, Ti, W, HF and Y. The second layer is an alloy including Ni and Cr.
摘要翻译：磁阻装置包括设置在第一和第二屏蔽层之间的特定距离处的第一屏蔽层和第二屏蔽层，以及设置在第一屏蔽层和MR元件之间的下层。下层，MR元件和第二屏蔽层堆叠在第一屏蔽层上。下层包括具有与第一屏蔽层接触的底表面的第一层和具有与第一层的顶表面接触的底表面的第二层和与第一层相邻的顶表面 MR元件，其中设置有导电层。第一层由包括Ta，Ti，W，HF和Y中的至少一种的材料制成。第二层是包括Ni和Cr的合金。

50. 发明授权

US07145756B2 Magnetic transducer, thin film magnetic head and method of manufacturing the same 失效
标题翻译：磁性传感器，薄膜磁头及其制造方法
公开(公告)号：US07145756B2
公开(公告)日：2006-12-05
申请号：US10645901
申请日：2003-08-22
申请人： Yoshihiro Tsuchiya , Satoru Araki , Masashi Sano
发明人： Yoshihiro Tsuchiya , Satoru Araki , Masashi Sano
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B2005/3996
摘要： Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head.A stack, a spin valve film has a stacked structure comprising a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic metal layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the first and second soft magnetic layers. A soft magnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the first soft magnetic layer is formed in the first soft magnetic layer. When a current flows through the stack, electrons are reflected by the surface of the soft magnetic interlayer and thus a path for the electrons is narrowed. Therefore, a rate of resistance change is increased.
摘要翻译：提供能够增加电阻变化并获得适当矫顽力的磁换能器，薄膜磁头，制造磁换能器的方法和制造薄膜磁头的方法。叠层，自旋阀膜具有堆叠结构，其包括依次层叠在下层上的第一软磁层，第二软磁层，非磁性金属层，铁磁层，反铁磁层和保护层。电阻根据铁磁层的磁化取向与第一和第二软磁层的磁化方向之间的相对角度而改变。在第一软磁性层中形成具有磁性的软磁性中间层和比第一软磁性层的电阻高的电阻。当电流流过堆叠时，电子被软磁中间层的表面反射，因此电子的路径变窄。因此，电阻变化率增加。

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