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    • 44. 发明授权
    • Semiconductor variable capacitor
    • 半导体可变电容器
    • US08498094B2
    • 2013-07-30
    • US13068161
    • 2011-05-05
    • Fabio Alessio MarinoPaolo Menegoli
    • Fabio Alessio MarinoPaolo Menegoli
    • H01G7/00
    • H01G7/00H01L29/93H01L29/94Y10T29/435
    • A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage avoiding distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a linear dependence of the capacitance value with respect to the voltage of its control terminal.
    • 提出了一种新型的半导体可变电容器。 半导体结构简单,基于适用于集成电路的半导体可变MOS电容器结构,其具有至少三个端子,其中之一用于通过增加或减少其直流电压来调制MOS结构的等效电容器面积 相对于器件的另一个端子,以便在宽范围的值上改变电容。 此外,本发明解耦AC信号和DC控制电压,避免了失真,提高了设备​​的性能,如其控制特性。 本发明是简单的,并且只是稍微依赖于由于制造过程而引起的变化。 它表现出高的电容密度值,并且如果适当地实现,则显示电容值相对于其控制端子的电压的线性相关性。
    • 47. 发明申请
    • FEEDTHROUGH ASSEMBLY INCLUDING A CAPACITIVE FILTER ARRAY
    • 包括电容滤波器阵列在内的组装
    • US20130058003A1
    • 2013-03-07
    • US13308136
    • 2011-11-30
    • Rajesh V. IyerSimon E. GoldmanThomas P. Miltich
    • Rajesh V. IyerSimon E. GoldmanThomas P. Miltich
    • H01G4/35H01G7/00
    • A61N1/3754A61N1/3968H03H7/0138H03H2001/0042H05K13/00Y10T29/43Y10T29/435Y10T29/49002Y10T29/49165Y10T29/49171Y10T29/49208
    • A feedthrough assembly may include a ferrule defining a ferrule opening, a feedthrough at least partially disposed within the ferrule opening, and a capacitive filter array at least partially disposed within the ferrule opening. The feedthrough may include at least one feedthrough conductive pathway and the capacitive filter array may include at least one filter array conductive pathway. In some examples, the feedthrough assembly includes a thick film conductive paste electrically connecting the at least one feedthrough conductive pathway and the at least one filter array conductive pathway. In some examples, the capacitive feedthrough array includes a perimeter conductive contact and a capacitive filter electrically coupling the at least one filter array conductive pathway and the perimeter conductive contact. In some of these examples, the feedthrough assembly includes a thick film conductive paste electrically connecting the perimeter conductive contact and the ferrule.
    • 馈通组件可以包括限定套圈开口的套圈,至少部分地设置在套圈开口内的馈通,以及至少部分地设置在套圈开口内的电容式过滤器阵列。 馈通可以包括至少一个馈通导电路径,并且电容滤波器阵列可以包括至少一个滤波器阵列导电路径。 在一些示例中,馈通组件包括电连接至少一个馈通导电路径和至少一个滤波器阵列导电路径的厚膜导电糊。 在一些示例中,电容馈通阵列包括周边导电触点和电耦合至少一个滤波器阵列导电路径和周边导电触点的电容滤波器。 在这些示例中的一些示例中,馈通组件包括电连接周边导电触点和套圈的厚膜导电膏。
    • 49. 发明申请
    • CONDUCTIVE STRUCTURE HAVING AN EMBEDDED ELECTRODE, AND SOLID CAPACITOR HAVING AN EMBEDDED ELECTRODE AND METHOD OF MAKING THE SAME
    • 具有嵌入电极的导电结构和具有嵌入电极的固体电容器及其制造方法
    • US20120300369A1
    • 2012-11-29
    • US13115964
    • 2011-05-25
    • WEI-CHIH LEEMing-Tsung Chen
    • WEI-CHIH LEEMing-Tsung Chen
    • H01G4/06H01G7/00H01G9/15
    • H01G9/012H01G9/052H01G9/15Y10T29/435
    • A solid capacitor having an embedded electrode includes a substrate unit, a first conductive unit, a second conductive unit, a first insulative unit, a third conductive unit, a second insulative unit, and an end electrode unit. The substrate unit includes a substrate body and a conductive body embedded into the substrate body. The substrate body has a lateral opening and a plurality of top openings, and the conductive body has a lateral conductive area exposed from the lateral opening and a plurality of top conductive areas respectively exposed from the top openings. The first conductive unit includes a plurality of first conductive layers respectively covering the top conductive areas. The second conductive unit includes a second conductive layer covering the first conductive layers. The porosity rate of the second conductive layer is larger than that of each first conductive layer.
    • 具有嵌入电极的固体电容器包括基板单元,第一导电单元,第二导电单元,第一绝缘单元,第三导电单元,第二绝缘单元和端电极单元。 基板单元包括基板主体和嵌入基板主体中的导电体。 基板主体具有侧向开口和多个顶部开口,并且导电体具有从侧向开口暴露的横向导电区域和分别从顶部开口露出的多个顶部导电区域。 第一导电单元包括分别覆盖顶部导电区域的多个第一导电层。 第二导电单元包括覆盖第一导电层的第二导电层。 第二导电层的孔隙率大于每个第一导电层的孔隙率。
    • 50. 发明申请
    • MULTILAYER CERAMIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME
    • 多层陶瓷电容器及其制造方法
    • US20120229949A1
    • 2012-09-13
    • US13233549
    • 2011-09-15
    • Hyung Joon KIM
    • Hyung Joon KIM
    • H01G4/12H01G7/00
    • H01G4/12H01G4/005Y10T29/43
    • There is disclosed a multilayer ceramic capacitor and a method of manufacturing the same. The multilayer ceramic capacitor includes a multilayer body having a first side and a second side opposite to each other and having a third side and a fourth side connecting the first side to the second side, a plurality of inner electrodes formed in the multilayer body and having distal edges exposed to the first side or the second side, first and second side members formed on the first and second sides to cover the distal edges of the plurality of inner elecrodes, and outer electrodes formed on the third side and the fourth side to be electrically connected to the inner electrodes. An angle between a virtual line connecting the distal edges of the plurality of inner electrodes and the first side member or the second side member is less than 90° (π/2).
    • 公开了一种多层陶瓷电容器及其制造方法。 多层陶瓷电容器包括具有彼此相对的第一侧和第二侧的多层体,并且具有连接第一侧和第二侧的第三侧和第四侧,形成在多层体中的多个内电极,具有 暴露于第一侧或第二侧的远端边缘,形成在第一侧和第二侧上的第一和第二侧构件以覆盖多个内部电极的远端边缘,以及形成在第三侧和第四侧上的外部电极 电连接到内部电极。 连接多个内部电极的远端边缘的虚拟线与第一侧面部件或第二侧面部件之间的角度小于90°(& pgr / 2)。