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1. 发明授权

US11408782B2 Indoor temperature control system 有权
公开(公告)号：US11408782B2
公开(公告)日：2022-08-09
申请号：US16594778
申请日：2019-10-07
申请人： Ming-Tsung Chen
发明人： Ming-Tsung Chen
IPC分类号： G01K17/08 , F24F11/64 , F24F11/76 , F24F11/52 , F24F110/10
摘要： An indoor temperature control system includes a server, a first temperature sensor, a second temperature sensor, and a third temperature sensor. The server obtains a first heat adjustment amount according to a first temperature value of the first temperature sensor. The server obtains a second heat adjustment amount according to a second temperature value of the second temperature sensor. The server obtains a predetermined amount of heat of a predetermined region according to a third temperature value of the third temperature sensor. The server obtains a heat flow simulation diagram according to the first heat adjustment amount, the second heat adjustment amount, and the predetermined amount of heat. The server determines an operating time of an air conditioning device based on a target temperature, the second temperature value, and the heat flow simulation diagram.

2. 发明授权

US11137266B2 Electric meter monitoring device and electric power monitoring system 有权
公开(公告)号：US11137266B2
公开(公告)日：2021-10-05
申请号：US16198813
申请日：2018-11-22
申请人： Ming-Tsung Chen
发明人： Ming-Tsung Chen
IPC分类号： G01D4/00 , G01R19/25
摘要： An electric meter monitoring device and an electric power monitoring system are provided. An image capturing module is disposed at a side opposite to an electric power consumption display module of an electric meter to capture an electric power consumption image of the electric power consumption display module. A clamp meter module clamps on at least one electric wire to detect a value of a current flowing through the at least one electric wire. A temperature humidity meter module detects a temperature value and a humidity value around the electric meter. A control module transmits an electric power consumption value, a current value, the temperature value and the humidity value to a server through a communication module.

3. 发明申请

US20210296901A1 POWER CONTROL SYSTEM 有权
公开(公告)号：US20210296901A1
公开(公告)日：2021-09-23
申请号：US16824847
申请日：2020-03-20
申请人： MING-TSUNG CHEN
发明人： MING-TSUNG CHEN
IPC分类号： H02J3/32 , H02J13/00 , H02J3/38 , G05B13/02 , G01R21/133
摘要： A power control system is disposed in a predetermined area. The power control system includes a server, a smart gateway device, a power detection device, a smart meter, a first power control device, a power generation device, a second power control device, a plurality of electronic devices, and a power storage device. The power detection device detects a value of a supply current per second of the first power of the first power control device. The power detection device detects a value of a used current per second of the second power of the second power control device. The power detection device provides a current difference between the value of the supply current and the value of the used current to the first power control device and the smart gateway device. The first power control device adjusts the first power at least based on the current difference.

4. 发明申请

US20210222836A1 LIGHT EMITTING DIODE ILLUMINATION DEVICE 有权
公开(公告)号：US20210222836A1
公开(公告)日：2021-07-22
申请号：US16744799
申请日：2020-01-16
申请人： MING-TSUNG CHEN
发明人： MING-TSUNG CHEN
IPC分类号： F21K9/238 , F21V23/00
摘要： A light emitting diode illumination device includes a control module, a signal transmitting and receiving module, and a light emitting diode module. The control module includes a first fixing unit. The first fixing unit is detachably fixed on a fixing base. The signal transmitting and receiving module is connected to the control module. The light emitting diode module includes a plurality of light emitting diode units and a substrate. The light emitting diode units are disposed on the substrate. The light emitting diode module is electrically connected to the control module. The light emitting diode module is disposed at one side of the control module.

5. 发明授权

US10826995B2 Electric device monitoring system and electric device monitoring method 有权
公开(公告)号：US10826995B2
公开(公告)日：2020-11-03
申请号：US16236214
申请日：2018-12-28
申请人： Ming-Tsung Chen
发明人： Ming-Tsung Chen
IPC分类号： G01R31/14 , G01R31/28 , H04L29/08 , H04L12/28 , H04L29/06 , H04Q9/00 , G01R31/50 , G01R31/52 , G01R31/58 , G01R31/34 , G01R31/54 , G01R31/66
摘要： An electronic device monitoring system includes a server, a first electronic device, and a first power feature identifying device. The first electronic device is electrically connected to a grid. A first voltage and a first current are variable. The first power feature identifying device communicates with the server by a first communication protocol. The first power feature identifying device is disposed between the first electronic device and the grid. The first power feature identifying device extracts a plurality of voltage-time features, a plurality of current-time features, and a plurality of voltage-current features of the first electronic device in a first predetermined time, and the first power feature identifying device transmits those features to the server to generate a first power profile based thereon. The server monitors whether the first electronic device is in normal operation based on the first power profile.

6. 发明申请

US20200221276A1 BLUETOOTH GATEWAY 审中-公开
公开(公告)号：US20200221276A1
公开(公告)日：2020-07-09
申请号：US16238611
申请日：2019-01-03
申请人： MING-TSUNG CHEN
发明人： MING-TSUNG CHEN
IPC分类号： H04W4/80
摘要： A Bluetooth gateway communicating with a plurality of electronic devices includes a first Bluetooth module including a first communication sequence, and a second Bluetooth module being electrically connected to the first Bluetooth module and including a second communication sequence. The first Bluetooth module and the second Bluetooth module determine whether to communicate with one of the electronic devices based on the first communication sequence and the second communication sequence, and current connection states of the first Bluetooth module and the second Bluetooth module.

7. 发明授权

US09136348B2 Semiconductor structure and fabrication method thereof 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US09136348B2
公开(公告)日：2015-09-15
申请号：US13417337
申请日：2012-03-12
申请人： Ming-Te Wei , Shin-Chuan Huang , Yu-Hsiang Hung , Po-Chao Tsao , Chia-Jui Liang , Ming-Tsung Chen , Chia-Wen Liang
发明人： Ming-Te Wei , Shin-Chuan Huang , Yu-Hsiang Hung , Po-Chao Tsao , Chia-Jui Liang , Ming-Tsung Chen , Chia-Wen Liang
IPC分类号： H01L29/66 , H01L29/78 , H01L29/165
CPC分类号： H01L29/66492 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacent to the gate structure, a doped epitaxial material filling up the recess, a cap layer including an undoped epitaxial material and disposed on the doped epitaxial material, a lightly doped drain disposed below the cap layer and sandwiched between the doped epitaxial material and the cap layer, and a silicide disposed on the cap layer and covering the doped epitaxial material to cover the cap layer together with the outer spacer without directly contacting the lightly doped drain.
摘要翻译：半导体结构包括设置在基板上并具有外部间隔件的栅极结构，设置在基板中并与栅极结构相邻的凹槽，填充凹部的掺杂的外延材料，包括未掺杂的外延材料的盖层，所述掺杂的外延材料是设置在所述覆盖层下方并且夹在所述掺杂的外延材料和所述覆盖层之间的轻掺杂漏极，以及设置在所述覆盖层上并覆盖所述掺杂外延材料以与所述外部间隔物一起覆盖所述覆盖层的硅化物而不直接接触轻掺杂的漏极。

8. 发明申请

US20130234261A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF 有权
公开(公告)号：US20130234261A1
公开(公告)日：2013-09-12
申请号：US13417337
申请日：2012-03-12
申请人： Ming-Te Wei , Shin-Chuan Huang , Yu-Hsiang Hung , Po-Chao Tsao , Chia-Jui Liang , Ming-Tsung Chen , Chia-Wen Liang
发明人： Ming-Te Wei , Shin-Chuan Huang , Yu-Hsiang Hung , Po-Chao Tsao , Chia-Jui Liang , Ming-Tsung Chen , Chia-Wen Liang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66492 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacent to the gate structure, a doped epitaxial material filling up the recess, a cap layer including an undoped epitaxial material and disposed on the doped epitaxial material, a lightly doped drain disposed below the cap layer and sandwiched between the doped epitaxial material and the cap layer, and a silicide disposed on the cap layer and covering the doped epitaxial material to cover the cap layer together with the outer spacer without directly contacting the lightly doped drain.

9. 发明授权

US08517074B2 Apparatus for laminating a film on a wafer 有权
标题翻译：用于在薄片上层压薄膜的装置
公开(公告)号：US08517074B2
公开(公告)日：2013-08-27
申请号：US13345756
申请日：2012-01-09
申请人： Chin-Sen Lai , Ming-Tsung Chen
发明人： Chin-Sen Lai , Ming-Tsung Chen
IPC分类号： B29C65/00 , B32B37/00 , B32B38/04 , B32B38/10
CPC分类号： B32B38/10 , B32B43/00
摘要： An apparatus for laminating a film on a wafer includes a cutting mechanism and a laminating mechanism. The cutting mechanism has a cutting device disposed thereon for pre-cutting a dry film. The cutting mechanism has a supporter disposed adjacent to the cutting device for positioning a wafer. The cutting mechanism has a suction member disposed and corresponding to the cutting device for sucking the cut dry film to allow the cutting device pre-cutting the dry film and moving the cut dry film to the supporter. The laminating mechanism has a first lower member provided for positioning the wafer and a first upper member disposed above the first lower member for laminating the cut dry film with electrically heating to adhere the cut dry film on the wafer.
摘要翻译：用于在薄片上层压膜的设备包括切割机构和层压机构。切割机构具有设置在其上的用于预切割干膜的切割装置。切割机构具有邻近切割装置设置的用于定位晶片的支撑件。切割机构具有设置成对应于切割装置的抽吸构件，用于吸入切割的干膜，以允许切割装置预切割干膜并将切割的干膜移动到支撑件。层压机构具有设置用于定位晶片的第一下部构件和设置在第一下部构件上方的第一上部构件，用于通过电加热层压切割的干燥膜以将切割的干膜粘附在晶片上。

10. 发明申请

US20120256273A1 METHOD OF UNIFYING DEVICE PERFORMANCE WITHIN DIE 审中-公开
标题翻译：在DIE中统一设备性能的方法
公开(公告)号：US20120256273A1
公开(公告)日：2012-10-11
申请号：US13228455
申请日：2011-09-09
申请人： Yu-Ho Chiang , Ming-Tsung Chen , Wai-Yi Lien , Chih-Kai Hsu , Chun-Liang Hou
发明人： Yu-Ho Chiang , Ming-Tsung Chen , Wai-Yi Lien , Chih-Kai Hsu , Chun-Liang Hou
IPC分类号： H01L29/06 , H01L21/765 , H01L21/762
CPC分类号： H01L27/0207
摘要： A method of unifying device performance within an integrated circuit die includes providing a layout of an integrated circuit die with multiple functional circuit blocks; filling a field between the multiple functional circuit blocks with dummy diffusion patterns; and filling the field between the multiple functional circuit blocks with dummy gate patterns such that the dummy gate patterns and the dummy diffusion patterns are completely overlapped.
摘要翻译：在集成电路管芯内统一器件性能的方法包括：提供具有多个功能电路块的集成电路管芯的布局; 用虚拟扩散图案填充多个功能电路块之间的场; 并且用虚拟栅极图案填充多个功能电路块之间的场，使得虚拟栅极图案和虚拟扩散图案完全重叠。

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