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    • 51. 发明申请
    • METHOD OF ACQUIRING A GPS SIGNAL BY ITERATIVE DECODING
    • 通过迭代解码获取GPS信号的方法
    • US20140233610A1
    • 2014-08-21
    • US14185190
    • 2014-02-20
    • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    • Mathieu Bouvier Des NoesValentin Savin
    • H04B1/7073
    • H04B1/7073G01S19/30H04B1/7075H04B1/7183H04B2201/70715
    • The invention relates to a method of acquiring a GPS signal, spread by a Gold sequence obtained as the sum of a first M-sequence and a second M-sequence, this second M-sequence being characteristic of a satellite among a plurality of satellites in the GPS system. The acquisition method comprises a sampling step starting from a given time (410), a multiplication step for the sequence of samples obtained with the first M-sequence (420) and an iterative decoding step for the decoded values (430) making it possible to estimate the content of the second shift register of the second M-sequence at said given time. If the content thus estimated is identical to the initial content of the second register for an identified satellite (443), the receiver is synchronised with this satellite at said given time (490).
    • 本发明涉及一种获取由第一M序列和第二M序列的和获得的Gold序列扩展的GPS信号的方法,该第二M序列是多个卫星中的卫星特征 GPS系统。 采集方法包括从给定时间(410)开始的采样步骤,用第一M序列(420)获得的样本序列的乘法步骤和用于解码值(430)的迭代解码步骤,使得可以 在所述给定时间估计第二M序列的第二移位寄存器的内容。 如果如此估计的内容与用于所识别的卫星(443)的第二寄存器的初始内容相同,则在所述给定时间(490)接收机与该卫星同步。
    • 52. 发明申请
    • METHOD OF PROGRAMMING A NON-VOLATILE RESISTIVE MEMORY
    • 编制非易失性电阻记忆体的方法
    • US20140226391A1
    • 2014-08-14
    • US14175292
    • 2014-02-07
    • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    • Luca PERNIOLA
    • G11C13/00
    • G11C13/0069G11C13/0007G11C2013/0083
    • The invention relates to a method for pre-programming a matrix of resistive non-volatile memory cells, with said memory cells comprising a dielectric material positioned between two conducting electrodes, with said memory cells being initially in an original resistive state (original HRS) and the dielectric material being able to be so electrically modified as to bring the memory cell from the original resistive state (original HRS) to at least another resistive state (LRS, programmed HRS) wherein the resistance of the memory cell is at least twice and preferably at least ten times lower than the resistance of the memory cell in the original resistive state (original HRS), at least for a reading voltage interval, characterized in that the method comprises the following steps: prior to mounting a component containing said matrix on a support, programming the matrix by electrically bringing a plurality of cells from the original resistive state (original HRS) to said other resistive state (LRS, programmed HRS), leaving the other memory cells in the original resistive state (original HRS) thereof; mounting said matrix on a support, with the step of mounting comprising at least one of the following steps: a step of brazing, a step of welding.
    • 本发明涉及一种用于对电阻性非易失性存储单元的矩阵进行预编程的方法,其中所述存储单元包括位于两个导电电极之间的介电材料,所述存储单元最初处于原始电阻状态(原始HRS)和 电介质材料能够被电修改以将存储单元从原始电阻状态(原始HRS)移动到至少另一个电阻状态(LRS,编程的HRS),其中存储器单元的电阻至少是两次, 至少对于读取电压间隔至少比原始电阻状态(原始HRS)中的存储单元的电阻低十倍,其特征在于该方法包括以下步骤:在将包含所述矩阵的组件安装在 支持,通过将多个单元从原始电阻状态(原始HRS)电连接到所述另一个电阻性状态来对矩阵进行编程 e(LRS,编程的HRS),使其它存储器单元处于原始电阻状态(原始HRS); 将所述基体安装在支撑件上,其中安装步骤包括以下步骤中的至少一个步骤:钎焊步骤,焊接步骤。
    • 54. 发明申请
    • METHOD FOR ISOTROPIC ETCHING
    • 等压蚀刻方法
    • US20140187050A1
    • 2014-07-03
    • US14142028
    • 2013-12-27
    • Applied Materials, Inc.COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    • Nicolas POSSEMEGene LEE
    • H01L21/308
    • H01L21/3086H01L21/3081H01L21/31122H01L21/31144H01L21/32139
    • According to one embodiment, the invention relates to a method for the anisotropic etching of patterns in at least one layer to be etched through a hard mask comprising carbon in an inductive-coupling plasma etching reactor (ICP), the method being characterized in that the hard mask is made from boron doped with carbon (B:C), and in that, prior to the anisotropic etching of the patterns in said layer to be etched through the hard mask of carbon-doped boron (B:C), the following steps are performed: realization of an intermediate hard mask situated on a layer of carbon-doped boron intended to form the hard mask made from carbon-doped boron (B:C), etching of the layer of carbon-doped boron (B:C) through the intermediate hard mask in order to form the hard mask made from carbon-doped boron (B:C), the realization of the intermediate hard mask and the etching of the hard mask made from carbon-doped boron (B:C) being done in said inductive coupling plasma etching reactor (ICP).
    • 根据一个实施例,本发明涉及一种用于在电感耦合等离子体蚀刻反应器(ICP)中通过包含碳的硬掩模在至少一层中蚀刻图案的各向异性蚀刻的方法,其特征在于, 硬掩模由掺杂碳(B:C)的硼制成,并且因为在通过碳掺杂硼(B:C)的硬掩模蚀刻所述待蚀刻层中的图案的各向异性蚀刻之前, 执行步骤:实现位于用于形成由碳掺杂硼(B:C)制成的硬掩模的碳掺杂硼层上的中间硬掩模,蚀刻碳掺杂硼(B:C )通过中间硬掩模形成由碳掺杂硼(B:C)制成的硬掩模,中间硬掩模的实现以及由碳掺杂硼(B:C)制成的硬掩模的蚀刻, 在所述电感耦合等离子体蚀刻反应器(ICP)中完成。
    • 59. 发明申请
    • MICRO/NANO MULTIAXIAL INERTIAL SENSOR OF MOVEMENTS
    • 微型/纳米多变量惯性传感器
    • US20140060184A1
    • 2014-03-06
    • US13722427
    • 2012-12-20
    • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    • Arnaud WALTHER
    • G01P15/14
    • G01P15/14G01C19/5712G01P15/097G01P15/123G01P15/18
    • The multiaxial inertial sensor of movements is a micro/nano sensor that makes it possible to couple at least one accelerometer with other structures, either accelerometers or gyroscopes, by an oscillating disk structure. The oscillating disk also forms an inertial sensor such as a gyrometer. This single-chip structure associating both gyroscopes and accelerometers makes it possible to achieve detections and measurements in up to 6 axes, in other words 3 accelerometer axes and 3 gyroscope axes, and to exert control by a single and unique electronic unit, thus permitting a single automatic control loop in excitation and a single electronic reading chip.Application to technologies known as MEMS.
    • 运动的多轴惯性传感器是微/纳米传感器,其使得可以通过振荡盘结构将至少一个加速度计与其它结构(加速度计或陀螺仪)耦合。 振荡盘还形成诸如陀螺仪的惯性传感器。 将两个陀螺仪和加速度计相结合的单芯片结构使得可以在多达6个轴,换句话说,3个加速度计轴和3个陀螺仪轴上实现检测和测量,并通过单个和独特的电子单元进行控制,从而允许 激光单个自动控制回路和单个电子阅读芯片。 应用于称为MEMS的技术。