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51. 发明授权

US08024675B1 Method and system for wafer topography-aware integrated circuit design analysis and optimization 有权
标题翻译：晶圆地形识别集成电路设计分析与优化方法与系统
公开(公告)号：US08024675B1
公开(公告)日：2011-09-20
申请号：US11499070
申请日：2006-08-04
申请人： Puneet Gupta , Andrew Kahng , Puneet Sharma , Swamy Muddu
发明人： Puneet Gupta , Andrew Kahng , Puneet Sharma , Swamy Muddu
IPC分类号： G06F17/50 , G06F9/455
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A method and system for designing an optimized specification of an integrated circuit (IC) is provided. The IC comprises a plurality of cells, and each of the cells comprises a plurality of transistors. The method includes preparing a linewidth map of at least one device of the plurality of devices, performing a topography-aware analysis of the at least one device based on the linewidth map, and designing the optimized specification of the IC based on the topography-aware analysis. In another embodiment, a method for estimating a leakage power of at least one device in an IC is provided. The method includes determining a defocus and a pitch value, determining a linewidth value based on the defocus and pitch value, and estimating the leakage current and/or leakage power based on the linewidth value.
摘要翻译：提供了一种用于设计集成电路（IC）的优化规范的方法和系统。 IC包括多个单元，并且每个单元包括多个晶体管。该方法包括准备多个设备中的至少一个设备的线宽图，基于线宽图执行至少一个设备的地形感知分析，以及基于地形感知来设计IC的优化规范分析。在另一个实施例中，提供了一种用于估计IC中的至少一个设备的泄漏功率的方法。该方法包括确定散焦和音调值，基于散焦和音调值确定线宽值，以及基于线宽值估计泄漏电流和/或泄漏功率。

52. 发明申请

US20100278069A1 Flow Path Discovery In Network To Guarantee Multiple Metric QoS Constraints 有权
标题翻译：网络中的流路发现保证了多个度量QoS约束
公开(公告)号：US20100278069A1
公开(公告)日：2010-11-04
申请号：US12263429
申请日：2008-10-31
申请人： Puneet Sharma , Amit Mondal , Sujata Banerjee
发明人： Puneet Sharma , Amit Mondal , Sujata Banerjee
IPC分类号： H04L12/28
CPC分类号： H04L45/302 , H04L45/02 , H04L45/124 , H04L45/38 , H04L45/64 , H04L45/70
摘要： Route discovery for an end-to-end path in a network is performed for a flow. A path is attempted to be discovered that satisfies QoS constraints for multiple metrics for the flow. The route discovery includes determining whether a path request for a path satisfying the QoS constraints is feasible, infeasible or undecideable based on information in a local QoS table. If the path request is determined to be undecideable, route discovery is performed with neighbors.
摘要翻译：针对流程执行网络中端到端路径的路由发现。尝试发现一个满足流量多个度量的QoS约束的路径。该路由发现包括确定针对满足QoS约束的路径的路径请求是否可行，基于本地QoS表中的信息是不可行或不可切换的。如果路径请求被确定为不可取消，则路由发现与邻居一起执行。

53. 发明申请

US20100210111A1 PITCH REDUCED PATTERNS RELATIVE TO PHOTOLITHOGRAPHY FEATURES 有权
标题翻译：相对于光刻特征的PITCH减少图案
公开(公告)号：US20100210111A1
公开(公告)日：2010-08-19
申请号：US12769071
申请日：2010-04-28
申请人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
发明人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
IPC分类号： H01L21/308
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern. Pitch multiplication is accomplished by patterning an amorphous carbon layer. Sidewall spacers are then formed on the amorphous carbon sidewalls which are then removed; the sidewall spacers defining the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is transferred to the BARC. The combined pattern is transferred to an underlying amorphous silicon layer. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, is then etched into the underlying substrate.
摘要翻译：通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。间距乘法用于形成第一模式的相对较小的特征。通过图案化无定形碳层来实现间距倍增。然后在非晶碳侧壁上形成侧壁间隔物，然后将其去除; 侧壁间隔物限定第一掩模图案。然后沉积底部抗反射涂层（BARC）以形成平坦表面，并且在BARC上形成光致抗蚀剂层。接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，其转移到BARC。将组合图案转移到下面的非晶硅层。然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。然后将组合的掩模图案蚀刻到下面的基底中。

54. 发明授权

US07718540B2 Pitch reduced patterns relative to photolithography features 有权
标题翻译：相对于光刻特征的间距减小
公开(公告)号：US07718540B2
公开(公告)日：2010-05-18
申请号：US11670296
申请日：2007-02-01
申请人： Luan Tran , William T Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K Abatchev , Gurtej S Sandhu , D. Mark Durcan
发明人： Luan Tran , William T Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K Abatchev , Gurtej S Sandhu , D. Mark Durcan
IPC分类号： H01L21/302
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
摘要翻译：通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。然后在无定形碳的侧壁上形成侧壁间隔物。去除无定形碳，留下限定第一掩模图案的侧壁间隔物。然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。

55. 发明申请

US20100092891A1 PITCH REDUCED PATTERNS RELATIVE TO PHOTOLITHOGRAPHY FEATURES 有权
标题翻译：相对于光刻特征的PITCH减少图案
公开(公告)号：US20100092891A1
公开(公告)日：2010-04-15
申请号：US12636581
申请日：2009-12-11
申请人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
发明人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
IPC分类号： G03F7/20
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
摘要翻译：通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。然后在无定形碳的侧壁上形成侧壁间隔物。去除无定形碳，留下限定第一掩模图案的侧壁间隔物。然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。

56. 发明授权

US07529196B2 Routing a service query in an overlay network 有权
标题翻译：在覆盖网络中路由服务查询
公开(公告)号：US07529196B2
公开(公告)日：2009-05-05
申请号：US11006041
申请日：2004-12-07
申请人： Sujoy Basu , Sujata Banerjee , Puneet Sharma , Sung-Ju Lee
发明人： Sujoy Basu , Sujata Banerjee , Puneet Sharma , Sung-Ju Lee
IPC分类号： H04L12/28
CPC分类号： H04L67/104 , H04L67/1068 , H04L67/1093 , H04L67/16 , H04L67/322 , H04L67/327
摘要： A query including a plurality of attributes and attribute values for a desired service is received. The query is routed to a destination in the overlay network using different attributes in the query.
摘要翻译：接收包括所需服务的多个属性和属性值的查询。使用查询中的不同属性将查询路由到覆盖网络中的目标。

57. 发明授权

US07253118B2 Pitch reduced patterns relative to photolithography features 有权
标题翻译：相对于光刻特征的间距减小
公开(公告)号：US07253118B2
公开(公告)日：2007-08-07
申请号：US11214544
申请日：2005-08-29
申请人： Luan Tran , William T. Rericha , John Lee , Raman Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
发明人： Luan Tran , William T. Rericha , John Lee , Raman Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
IPC分类号： H01L21/302
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
摘要翻译：通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。然后在无定形碳的侧壁上形成侧壁间隔物。去除无定形碳，留下限定第一掩模图案的侧壁间隔物。然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。

58. 发明申请

US20060120411A1 Splitting a workload of a node 有权
公开(公告)号：US20060120411A1
公开(公告)日：2006-06-08
申请号：US11006061
申请日：2004-12-07
申请人： Sujoy Basu , Sujata Banerjee , Puneet Sharma , Sung-Ju Lee
发明人： Sujoy Basu , Sujata Banerjee , Puneet Sharma , Sung-Ju Lee
IPC分类号： H04L12/28 , H04J3/14 , H04J1/16 , H04L1/00 , H04L12/26 , H04L12/56 , H04J3/02
CPC分类号： H04L67/1008 , H04L45/46 , H04L67/1002 , H04L67/101 , H04L67/1012 , H04L67/104 , H04L67/1085 , H04L67/1093 , H04L67/1095 , H04L67/16
摘要： A node is identified from a set of nodes in a peer-to-peer network having the highest workloads in the peer-to-peer network. The workload of the node is split with another node using a splitting algorithm.

59. 发明申请

US20050198328A1 Identifying a service node in a network 有权
标题翻译：识别网络中的服务节点
公开(公告)号：US20050198328A1
公开(公告)日：2005-09-08
申请号：US10960605
申请日：2004-10-08
申请人： Sung-Ju Lee , Sujata Banerjee , Puneet Sharma , Sujoy Basu
发明人： Sung-Ju Lee , Sujata Banerjee , Puneet Sharma , Sujoy Basu
IPC分类号： H04L12/56 , G06F15/16
CPC分类号： H04L67/16 , H04L45/02 , H04L45/122 , H04L45/124 , H04L45/126 , H04L45/46 , H04L45/54 , H04L67/104 , H04L67/1065 , H04L67/18 , H04L67/322 , H04W4/02
摘要： A request is received from a first node in a network. The request includes a request for a service node operable to provide a desired service. At least one service node is identified that is operable to provide the desired service based at least on location information for the first node.
摘要翻译：从网络中的第一节点接收到请求。该请求包括对可操作以提供所需服务的服务节点的请求。至少一个服务节点被识别为可用于至少基于第一节点的位置信息来提供期望的服务。

60. 发明申请

US20050076057A1 Method and system for transferring video and audio files to portable computing devices 审中-公开
标题翻译：将视频和音频文件传输到便携式计算设备的方法和系统
公开(公告)号：US20050076057A1
公开(公告)日：2005-04-07
申请号：US10679111
申请日：2003-10-03
申请人： Puneet Sharma , John Brassil , Sujata Banerjee
发明人： Puneet Sharma , John Brassil , Sujata Banerjee
IPC分类号： G06F17/00 , G06F21/00
CPC分类号： G06F21/10
摘要： The present teachings provide for the download and purchase of a digital movie. Several schemes are described for handling a large file that is a digital movie including separately handling its audio and video component. Because the video component is downloaded separately from an audio component, it can be downloaded over several sessions. A user can separately initiate the download of the corresponding audio component. Because the audio component is significantly smaller, its download can be achieved in a much shorter time, often in one session. Thus, content is provided to a user in a substantially transparent manner such that a user's perception of receiving the functionality of a digital movie essentially becomes the time required to initiate payment and download of a relatively small audio component.
摘要翻译：本教导提供数字电影的下载和购买。描述了用于处理作为数字电影的大文件的几种方案，包括单独处理其音频和视频组件。由于视频组件是从音频组件单独下载的，因此可以通过多个会话进行下载。用户可以单独启动相应音频组件的下载。由于音频组件明显较小，因此可以在短时间内（通常在一个会话中）实现其下载。因此，以基本透明的方式向用户提供内容，使得用户接收数字电影的功能的感觉基本上成为启动相对较小的音频组件的支付和下载所需的时间。

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