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51. 发明申请

US20120001196A1 LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM 有权
标题翻译：发光装置，其制造方法，发光装置包装和照明系统
公开(公告)号：US20120001196A1
公开(公告)日：2012-01-05
申请号：US13175424
申请日：2011-07-01
申请人： Kwang Ki CHOI , Hwan Hee JEONG , Ji hyung MOON , Sang Youl LEE , June O SONG , Se Yeon JUNG , Tae Yeon SEONG
发明人： Kwang Ki CHOI , Hwan Hee JEONG , Ji hyung MOON , Sang Youl LEE , June O SONG , Se Yeon JUNG , Tae Yeon SEONG
IPC分类号： H01L29/12 , H01L33/62 , H01L33/02
CPC分类号： H01L33/22 , H01L33/14 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an oxide protrusion disposed on at least a portion of the second conducive semiconductor layer; and a current spreading layer on the second conductive semiconductor layer and the oxide protrusion.
摘要翻译：提供了发光器件，其制造方法，发光器件封装和照明系统。发光器件包括：包括第一导电半导体层，有源层和第二导电半导体层的发光结构层; 设置在所述第二导电半导体层的至少一部分上的氧化物突起; 以及在第二导电半导体层和氧化物突起上的电流扩展层。

52. 发明授权

US08053786B2 Top-emitting light emitting diodes and methods of manufacturing thereof 有权
标题翻译：顶部发光二极管及其制造方法
公开(公告)号：US08053786B2
公开(公告)日：2011-11-08
申请号：US12923053
申请日：2010-08-31
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发光氮化物系发光元件，其特征在于，具有形成在p型覆盖层上的界面改性层和透明导电性由形成在界面改性层上的透明导电材料构成的薄膜层; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线键合效率和产率在包装发光器件时，能够通过低比接触电阻和优异的电流 - 电压特性提高器件的发光效率和使用寿命。

53. 发明申请

US20110086448A1 Flip-chip light emitting diodes and method of manufacturing thereof 有权
公开(公告)号：US20110086448A1
公开(公告)日：2011-04-14
申请号：US12926638
申请日：2010-12-01
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

54. 发明授权

US07910935B2 Group-III nitride-based light emitting device 有权
标题翻译： III族氮化物系发光器件
公开(公告)号：US07910935B2
公开(公告)日：2011-03-22
申请号：US12159084
申请日：2006-10-27
申请人： Tae-Yeon Seong
发明人： Tae-Yeon Seong
IPC分类号： H01L27/15
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： Disclosed is a group-III nitride-based light emitting diode. The group-III nitride-based light emitting diode includes a substrate, an n-type nitride-based cladding layer formed on the substrate, a nitride-based active layer formed on the n-type nitride-based cladding layer, a p-type nitride-based cladding layer formed on the nitride-based active layer, and a p-type multi-layered ohmic contact layer formed on the p-type nitride-based cladding layer and including thermally decomposed nitride. The thermally decomposed nitride is obtained by combining nitrogen (N) with at least one metal component selected from the group consisting of nickel (Ni), copper (Cu), zinc (Zn), indium (In) and tin (Sn). An ohmic contact characteristic is enhanced at the interfacial surface of the p-type nitride-based cladding layer of the group-III nitride-based light emitting device, thereby improving the current-voltage characteristics. In addition, since the light transmittance of the transparent electrode is improved, light efficiency and brightness of the group-III nitride-based light emitting device are also improved.
摘要翻译：公开了III族氮化物系发光二极管。 III族氮化物系发光二极管包括基板，形成在基板上的n型氮化物基覆层，形成在n型氮化物基覆层上的氮化物基活性层，p型形成在氮化物系活性层上的氮化物系覆层，以及在p型氮化物系被膜层上形成的包含热分解氮化物的p型多层欧姆接触层。通过将氮（N）与选自镍（Ni），铜（Cu），锌（Zn），铟（In）和锡（Sn）中的至少一种金属成分组合而获得的热分解氮化物。在III族氮化物系发光器件的p型氮化物基覆层的界面处增强了欧姆接触特性，从而提高了电流 - 电压特性。此外，由于透明电极的透光率提高，所以III族氮化物系发光元件的光效和亮度也得到改善。

55. 发明授权

US07550374B2 Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same 有权
标题翻译：用于在用于制造高性能氮化镓基光学器件的镍基固溶体的发光二极管和激光二极管中形成欧姆接触的薄膜电极及其制造方法
公开(公告)号：US07550374B2
公开(公告)日：2009-06-23
申请号：US11265098
申请日：2005-11-03
申请人： June-o Song , Dong-suk Leem , Tae-yeon Seong
发明人： June-o Song , Dong-suk Leem , Tae-yeon Seong
IPC分类号： H01L21/3205 , H01L21/28
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32 , H01S5/0421 , H01S5/0425 , H01S5/3054 , H01S5/32341
摘要： Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor.The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region.
摘要翻译：本文公开了一种用于形成可用于制造发射蓝色和绿色可见光和紫外光的短波长发光二极管（LED）的高质量欧姆接触的技术，以及使用氮化镓（GaN）半导体的激光二极管。通过在p型氮化镓半导体的顶部上沉积基于镍（Ni）的固溶体形成欧姆接触。这样形成的欧姆接触由于在氮化镓层的表面附近增加的有效载流子浓度以及在短波长区域中的高透射率，具有优异的电流 - 电压特性和低的比接触电阻。

56. 发明申请

US20080093617A1 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法
公开(公告)号：US20080093617A1
公开(公告)日：2008-04-24
申请号：US11808172
申请日：2007-06-07
申请人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
发明人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
IPC分类号： H01L33/00 , H01L21/283 , H01L23/48
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
摘要翻译：提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

57. 发明授权

US07205576B2 Light emitting device and method of manufacturing the same 有权
公开(公告)号：US07205576B2
公开(公告)日：2007-04-17
申请号：US10930915
申请日：2004-09-01
申请人： June-o Song , Dong-seok Leem , Tae-yeon Seong
发明人： June-o Song , Dong-seok Leem , Tae-yeon Seong
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2933/0016
摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.

58. 发明授权

US07180094B2 Nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US07180094B2
公开(公告)日：2007-02-20
申请号：US10957704
申请日：2004-10-05
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L29/04
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
摘要翻译：提供一种氮化物系发光器件及其制造方法。氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

59. 发明申请

US20050133809A1 Top-emitting nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：顶部发射氮化物基发光器件及其制造方法
公开(公告)号：US20050133809A1
公开(公告)日：2005-06-23
申请号：US11011154
申请日：2004-12-15
申请人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
发明人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
IPC分类号： H01L21/28 , H01L33/06 , H01L33/32 , H01L33/42 , H01L23/48
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
摘要翻译：提供了一种顶发射N型发光器件及其制造方法。该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。改性金属层由Ag基材料形成。

60. 发明申请

US20050045907A1 Nitride-based light emitting device, and method of manufacturing the same 有权
标题翻译：氮化物系发光器件及其制造方法
公开(公告)号：US20050045907A1
公开(公告)日：2005-03-03
申请号：US10891014
申请日：2004-07-15
申请人： June-o Song , Tae-yeon Seong
发明人： June-o Song , Tae-yeon Seong
IPC分类号： H01L33/06 , H01L33/10 , H01L33/32 , H01L33/34 , H01L33/42 , H01L33/00 , H01L21/00
CPC分类号： H01L33/405 , H01L33/32
摘要： A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer which is formed between the reflective layer and the P-type clad layer.
摘要翻译：提供一种在N型覆盖层和P型覆盖层之间具有发光层的氮化物系发光器件。所述发光装置包括：反射从所述发光层发射的光的反射层; 以及形成在所述反射层与所述P型覆盖层之间的至少一个金属层。

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