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51. 发明授权

US08801893B2 Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor 有权
标题翻译：在电容耦合等离子体反应器中以均匀的温度冷却晶片载体的方法
公开(公告)号：US08801893B2
公开(公告)日：2014-08-12
申请号：US12855680
申请日：2010-08-12
申请人： Paul Lukas Brillhart , Richard Fovell , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
发明人： Paul Lukas Brillhart , Richard Fovell , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67109
摘要： A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.
摘要翻译：在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂，工件支撑件的内部流动通道构成制冷回路的蒸发器。该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。

52. 发明授权

US08546267B2 Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control 有权
标题翻译：使用多区域前馈热控制在等离子体反应器中处理工件的方法
公开(公告)号：US08546267B2
公开(公告)日：2013-10-01
申请号：US12953793
申请日：2010-11-24
申请人： Paul Lukas Brillhart , Richard Fovell , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
发明人： Paul Lukas Brillhart , Richard Fovell , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
IPC分类号： G01L19/04
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of controlling wafer temperature in a plasma reactor by obtaining the next scheduled change in RF heat load on the workpiece, and using thermal modeling to estimate respective changes in wafer backside gas pressure and in coolant flow through a wafer support pedestal that would compensate for the next scheduled change in RF heat load, and making the respective changes in the backside gas pressure or in the coolant flow prior to the time of the next scheduled change.
摘要翻译：一种通过获得工件上的RF热负荷的下一个预定的改变来控制等离子体反应器中的晶片温度的方法，并且使用热模型来估计晶片背面气体压力的相应变化以及通过晶片支撑基座的冷却剂流动，其将补偿下一个预定的RF热负荷的变化，并且在下一个预定的改变之前使背侧气体压力或冷却剂流中的各个变化。

53. 发明授权

US08221580B2 Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops 有权
标题翻译：具有晶片背面热循环的等离子体反应器，两相内部基座热回路和控制两个回路的控制处理器
公开(公告)号：US08221580B2
公开(公告)日：2012-07-17
申请号：US11408567
申请日：2006-04-21
申请人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
发明人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
IPC分类号： H01L21/3065 , C23C16/52 , C23C16/46 , C23C16/458
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在腔室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于将选定压力下的导热气体施加到每次形成的工件表面界面中工件被保持在表面上，并且蒸发器位于静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。反应器还包括静电吸盘中的温度传感器，能够模拟蒸发器和表面之间的热传递的热模型，其基于来自温度传感器和耦合到热模型的敏捷控制处理器的测量，并控制背侧气体压力源响应于来自所选压力的变化模型的预测，其将使由传感器测量的温度更接近所需温度。

54. 发明授权

US08157951B2 Capacitively coupled plasma reactor having very agile wafer temperature control 有权
标题翻译：具有非常敏捷的晶片温度控制的电容耦合等离子体反应器
公开(公告)号：US08157951B2
公开(公告)日：2012-04-17
申请号：US11408333
申请日：2006-04-21
申请人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： H01L21/306 , C23C16/52 , C23C16/46
CPC分类号： H01L21/67248 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.
摘要翻译：用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制气体阀响应于温度探头的输出与所需温度之间的差异。

55. 发明授权

US08034180B2 Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor 有权
标题翻译：在电容耦合等离子体反应器中以均匀的温度冷却晶片载体的方法
公开(公告)号：US08034180B2
公开(公告)日：2011-10-11
申请号：US11410782
申请日：2006-04-24
申请人： Paul Lukas Brillhart , Richard Fovell , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Paul Lukas Brillhart , Richard Fovell , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67109
摘要： A method of controlling the temperature of a workpiece on a workpiece support in a plasma reactor includes placing coolant in a flow channel thermally coupled to the workpiece support, supporting a thermally conductive gas between the workpiece and the workpiece support to establish a backside gas pressure, providing sensors to measure the temperature of the workpiece support and the workpiece, and determining whether the rate of change in workpiece temperature is less or more than a rate limited by a thermal mass of the workpiece support. If the rate is less or equal, the thermal conditions of the coolant in the flow channel are changed to reduce a difference between the measured workpiece support temperature and a target workpiece support temperature. If the rate is more, the pressure of the thermally conductive gas is changed to reduce a difference between the measured workpiece temperature and a target workpiece temperature.
摘要翻译：控制等离子体反应器中的工件支撑件上的工件的温度的方法包括将冷却剂放置在与工件支撑件热耦合的流动通道中，在工件和工件支撑件之间支撑导热气体以建立背侧气体压力，提供传感器来测量工件支撑件和工件的温度，并且确定工件温度的变化率是否小于或大于由工件支撑件的热质量限制的速率。如果速率小于或等于，则改变流道中的冷却剂的热条件以减少测量的工件支撑温度和目标工件支撑温度之间的差。如果速率更高，则改变导热气体的压力，以减小所测量的工件温度和目标工件温度之间的差异。

56. 发明申请

US20110065279A1 METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR USING FEED FORWARD THERMAL CONTROL 有权
标题翻译：使用前馈热控制处理等离子体反应器中的工件的方法
公开(公告)号：US20110065279A1
公开(公告)日：2011-03-17
申请号：US12949028
申请日：2010-11-18
申请人： Douglas A. Buchberger, JR. , Paul Lukas Brillhart , Richard Fovell , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Douglas A. Buchberger, JR. , Paul Lukas Brillhart , Richard Fovell , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： H01L21/465
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes an evaporator inside the electrostatic chuck, while pressurizing a workpiece-to-chuck interface with a thermally conductive gas, sensing conditions in the chamber including temperature near the workpiece and simulating heat flow through the electrostatic chuck in a thermal model of the chuck based upon the conditions. The method further includes obtaining the next scheduled change in RE heat load on the workpiece and using the model to estimate a change in thermal conditions of the coolant in the evaporator that would hold the temperature nearly constant by compensating for the next scheduled change in RF heat load, and making the change in thermal conditions of the coolant in the evaporator prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.
摘要翻译：一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过包括静电卡盘内的蒸发器的制冷回路，同时对工件 - 卡盘与导热气体接触，基于条件，感测室内的条件，包括工件附近的温度，并模拟卡盘热模型中通过静电卡盘的热流。该方法还包括获得在工件上的RE热负荷的下一个调度的变化，并且使用该模型来估计蒸发器中的冷却剂的热条件的变化，该变化将通过补偿下一个预定的RF热变化来保持温度几乎恒定在通过静电卡盘的热传播延迟的头开始的下一次预定改变之前，在蒸发器中的冷却剂的热条件的变化。

57. 发明申请

US20100319852A1 CAPACITIVLEY COUPLED PLASMA REACTOR HAVING A COOLED/HEATED WAFER SUPPORT WITH UNIFORM TEMPERATURE DISTRIBUTION 审中-公开
标题翻译：具有均匀温度分布的冷却/加热过滤器支持的电容耦合等离子体反应器
公开(公告)号：US20100319852A1
公开(公告)日：2010-12-23
申请号：US12855675
申请日：2010-08-12
申请人： Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas A. Buchberger, JR. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas A. Buchberger, JR. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： C23F1/08 , H01L21/306
CPC分类号： H01L21/67109 , H01L21/67069 , H01L21/67248 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.
摘要翻译：用于处理工件的等离子体反应器包括反应室，用于支撑工件的室内的静电卡盘，耦合以向静电卡盘施加RF功率的RF等离子体偏置功率发生器和在静电卡盘内具有蒸发器的制冷回路，制冷剂入口和制冷剂出口。优选地，蒸发器包括分布在静电卡盘的顶表面下方的平面中的曲折通道。优选地，蒸发器内的制冷剂在气相和液相之间分配。结果，静电吸盘和蒸发器内的制冷剂之间的热传递是恒温过程。该特征改善了静电卡盘的直径上的温度分布的均匀性。

58. 发明申请

US20100303680A1 CAPACITIVELY COUPLED PLASMA REACTOR HAVING VERY AGILE WAFER TEMPERATURE CONTROL 有权
标题翻译：具有非常平滑的温度控制的电容耦合等离子体反应器
公开(公告)号：US20100303680A1
公开(公告)日：2010-12-02
申请号：US12855678
申请日：2010-08-12
申请人： Douglas A. Buchberger, JR. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Douglas A. Buchberger, JR. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： B01J19/08
CPC分类号： H01L21/67248 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.
摘要翻译：用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制气体阀响应于温度探头的输出与所需温度之间的差异。

59. 发明申请

US20090159566A1 METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF A SUBSTRATE 审中-公开
标题翻译：控制基板温度的方法和装置
公开(公告)号：US20090159566A1
公开(公告)日：2009-06-25
申请号：US12340156
申请日：2008-12-19
申请人： Paul L. Brillhart , Richard Charles Fovell , Hamid Tavassoli , Xiaoping Zhou , Douglas A. Buchberger, JR. , Kallol Bera
发明人： Paul L. Brillhart , Richard Charles Fovell , Hamid Tavassoli , Xiaoping Zhou , Douglas A. Buchberger, JR. , Kallol Bera
IPC分类号： H01L21/306 , C23C16/513 , C23C14/22 , C23C14/34
CPC分类号： C23C16/4586 , C23C14/505
摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, method for controlling a substrate temperature during processing includes placing a substrate on a substrate pedestal assembly in a vacuum processing chamber, controlling a temperature of the substrate pedestal assembly by flowing a heat transfer fluid through a radial flowpath within the substrate pedestal assembly, the radial flowpath including both radially inward and radially outward portions, and plasma processing the substrate on the temperature controlled substrate pedestal assembly. In another embodiment, plasma processing may be at least one of a plasma treatment, a chemical vapor deposition process, a physical vapor deposition process, an ion implantation process or an etch process, among others.
摘要翻译：提供了一种用于在处理期间控制基板的温度的基座组件和方法。在一个实施例中，用于在处理期间控制衬底温度的方法包括将衬底放置在真空处理室中的衬底基座组件上，通过使传热流体流过衬底基座组件内的径向流动路径来控制衬底基座组件的温度径向流径包括径向向内和径向向外的部分，以及等离子体处理温度受控的衬底基座组件上的衬底。在另一个实施例中，等离子体处理可以是等离子体处理，化学气相沉积工艺，物理气相沉积工艺，离子注入工艺或蚀刻工艺等中的至少一个。

60. 发明申请

US20130098555A1 ELECTRON BEAM PLASMA SOURCE WITH PROFILED CONDUCTIVE FINS FOR UNIFORM PLASMA GENERATION 审中-公开
标题翻译：电子束等离子体源，具有用于均匀等离子体生成的导电导体
公开(公告)号：US20130098555A1
公开(公告)日：2013-04-25
申请号：US13595612
申请日：2012-08-27
申请人： Kallol Bera , Shahid Rauf , Ankur Agarwal
发明人： Kallol Bera , Shahid Rauf , Ankur Agarwal
IPC分类号： H05H1/46
CPC分类号： H01J37/3233
摘要： In a plasma reactor employing a planar electron beam as a plasma source, the electron beam source chamber has an internal conductive fin that is profiled along a direction transverse to the beam propagation diction and parallel to the plane of the electron beam, in order to correct electron beam density distribution.
摘要翻译：在采用平面电子束作为等离子体源的等离子体反应器中，电子束源室具有内部导电翅片，该内部导电翅片沿着横向于光束传播的方向并且平行于电子束的平面成型，以便校正电子束密度分布。

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