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1. 发明申请

US20180308663A1 PLASMA REACTOR WITH PHASE SHIFT APPLIED ACROSS ELECTRODE ARRAY 审中-公开
公开(公告)号：US20180308663A1
公开(公告)日：2018-10-25
申请号：US15960372
申请日：2018-04-23
申请人： Kenneth S. Collins , Kartik Ramaswamy , Yue Guo , Shahid Rauf , Kallol Bera , James D. Carducci , Michael R. Rice
发明人： Kenneth S. Collins , Kartik Ramaswamy , Yue Guo , Shahid Rauf , Kallol Bera , James D. Carducci , Michael R. Rice
IPC分类号： H01J37/32 , C23C16/455
CPC分类号： H01J37/32137 , C23C16/45536 , H01J37/32091 , H01J37/321 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01L21/67069 , H01L21/6831
摘要： A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support, each filament including a conductor surrounded by a cylindrical insulating shell, and an RF power source configured to apply a first RF signal to at least some of the plurality of filaments, to apply a second RF signal of equal frequency to at least some of the plurality of filaments, and to modulate a phase offset between the first RF signal and the second RF signal.

2. 发明申请

US20160068958A1 Lamp Heater For Atomic Layer Deposition 审中-公开
标题翻译：原子层沉积灯加热器
公开(公告)号：US20160068958A1
公开(公告)日：2016-03-10
申请号：US14785009
申请日：2014-04-10
申请人： Umesh M KELKAR , Kallol BERA , Karthik RAMANATHAN , Garry K KWONG , Joseph YUDOVSKY , Applied Materials, Inc.
发明人： Umesh M. Kelkar , Kallol Bera , Karthik Ramanathan , Garry K Kwong , Joseph Yudovsky
IPC分类号： C23C16/46 , C23C16/458 , C23C16/455
CPC分类号： C23C16/46 , C23C16/45544 , C23C16/4584 , C23C16/481 , C23C16/52 , H01L21/67115
摘要： Apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform are described. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating.
摘要翻译：描述了在基座组件上处理多个半导体晶片的装置和方法，使得基座组件上的温度是均匀的。多个线性灯被定位和控制在区域中以提供均匀的加热。

3. 发明授权

US09248509B2 Multi-zoned plasma processing electrostatic chuck with improved temperature uniformity 有权
标题翻译：多区域等离子处理静电卡盘具有改善的温度均匀性
公开(公告)号：US09248509B2
公开(公告)日：2016-02-02
申请号：US14447557
申请日：2014-07-30
申请人： Hamid Tavassoli , Surajit Kumar , Kallol Bera , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger, Jr.
发明人： Hamid Tavassoli , Surajit Kumar , Kallol Bera , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger, Jr.
IPC分类号： B23K10/00 , B23B31/28 , H01L21/67 , H01L21/683 , H05H1/46 , B23Q3/15
CPC分类号： B23B31/28 , B23B2231/24 , B23Q3/15 , H01L21/67069 , H01L21/6833 , H05H1/46 , Y10T279/23
摘要： An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.
摘要翻译：一种静电卡盘组件，包括具有顶表面以支撑工件的电介质层。布置在电介质层下方的冷却通道底座包括设置在顶表面的内部下方的多个内部流体导管，以及设置在顶部表面外部的多个外部流体导管。卡盘组件包括设置在内部和外部流体管道之间的冷却通道底部内的热断裂。卡盘组件包括布置在冷却通道底部和底板下方的流体分配板，用于将从公共输入端输送的传热流体分配到每个内部或外部流体导管。内部输入歧管的分支可以具有基本相等的流体电导。

4. 发明授权

US09068265B2 Gas distribution plate with discrete protective elements 有权
标题翻译：气体分布板带有离散的保护元件
公开(公告)号：US09068265B2
公开(公告)日：2015-06-30
申请号：US13363342
申请日：2012-01-31
申请人： Dmitry Lubomirsky , Kartik Ramaswamy , Kallol Bera , Jennifer Sun
发明人： Dmitry Lubomirsky , Kartik Ramaswamy , Kallol Bera , Jennifer Sun
IPC分类号： B05B5/00 , B05B1/14 , C23C16/509 , C23C16/455 , H01J37/32
CPC分类号： C23C16/5096 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45572 , H01J37/32091 , H01J37/3244 , H01J37/32559
摘要： Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.
摘要翻译：本发明的实施例提供一种具有用于等离子体处理的保护元件的气体分配板组件。气体分配板组件包括具有前侧和后侧的基板，以及与基板直接接触的多个保护元件。保护元件覆盖基板的前侧，以在使用过程中保护基板免受等离子体处理环境的影响。

5. 发明授权

US08980044B2 Plasma reactor with a multiple zone thermal control feed forward control apparatus 有权
标题翻译：具有多区域热控制前馈控制装置的等离子体反应器
公开(公告)号：US08980044B2
公开(公告)日：2015-03-17
申请号：US12855670
申请日：2010-08-12
申请人： Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
发明人： Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
IPC分类号： H01L21/67 , H01L21/683 , H01J37/32 , F25B49/02 , C23C16/46 , C23C16/50 , C23C16/503 , C23C16/52 , H01L21/3065 , H05H1/46
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和切割器膨胀阀的制冷回路，用于控制冷却剂通过内部和外部蒸发器。反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和外部温度传感器。耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度传感器分别更接近所需的温度。

6. 发明申请

US20140346743A1 MULTI-ZONED PLASMA PROCESSING ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE UNIFORMITY 审中-公开
标题翻译：具有改进温度均匀性的多区等离子体处理静电卡
公开(公告)号：US20140346743A1
公开(公告)日：2014-11-27
申请号：US14447557
申请日：2014-07-30
申请人： Hamid Tavassoli , Surajit Kumar , Kallol Bera , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger, JR.
发明人： Hamid Tavassoli , Surajit Kumar , Kallol Bera , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger, JR.
IPC分类号： B23B31/28 , B23Q3/15
CPC分类号： B23B31/28 , B23B2231/24 , B23Q3/15 , H01L21/67069 , H01L21/6833 , H05H1/46 , Y10T279/23
摘要： An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.
摘要翻译：一种静电卡盘组件，包括具有顶表面以支撑工件的电介质层。布置在电介质层下方的冷却通道底座包括设置在顶表面的内部下方的多个内部流体导管，以及设置在顶部表面的外部部分下方的多个外部流体导管。卡盘组件包括设置在内部和外部流体管道之间的冷却通道底部内的热断裂。卡盘组件包括布置在冷却通道底部和底板下方的流体分配板，用于将从公共输入端输送的传热流体分配到每个内部或外部流体导管。内部输入歧管的分支可以具有基本相等的流体电导。

7. 发明授权

US08512509B2 Plasma reactor gas distribution plate with radially distributed path splitting manifold 有权
公开(公告)号：US08512509B2
公开(公告)日：2013-08-20
申请号：US12004444
申请日：2007-12-19
申请人： Kallol Bera , Shahid Rauf
发明人： Kallol Bera , Shahid Rauf
IPC分类号： H01L21/306
CPC分类号： B01J19/26 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： In a showerhead assembly, a path splitting manifold comprises a gas supply inlet and a planar floor and plural gas outlets extending axially through the floor and azimuthally distributed about the floor. The path splitting manifold further comprises a plurality of channels comprising plural paths between the inlet and respective ones of the plural outlets. A gas distribution showerhead underlies the floor of the manifold and is open to the plural outlets. In certain embodiments, the plural paths are of equal lengths.

8. 发明申请

US20130098873A1 OVERHEAD ELECTRON BEAM SOURCE FOR PLASMA ION GENERATION IN A WORKPIECE PROCESSING REGION 审中-公开
标题翻译：用于工厂加工区域中等离子体生成的OVERHEAD电子束源
公开(公告)号：US20130098873A1
公开(公告)日：2013-04-25
申请号：US13595655
申请日：2012-08-27
申请人： Kartik Ramaswamy , Kallol Bera , Kenneth S. Collins , Shahid Rauf
发明人： Kartik Ramaswamy , Kallol Bera , Kenneth S. Collins , Shahid Rauf
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32541
摘要： A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.
摘要翻译：等离子体反应器具有用于在位于顶棚顶板和工件支撑表面之间的加工区域内加工工件的主室，所述反应器具有塔顶电子束源，其产生通过主体的天花板流入处理区域的电子束房间。

9. 发明授权

US08329586B2 Method of processing a workpiece in a plasma reactor using feed forward thermal control 有权
标题翻译：使用前馈热控制在等离子体反应器中处理工件的方法
公开(公告)号：US08329586B2
公开(公告)日：2012-12-11
申请号：US12949028
申请日：2010-11-18
申请人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
发明人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes an evaporator inside the electrostatic chuck, while pressurizing a workpiece-to-chuck interface with a thermally conductive gas, sensing conditions in the chamber including temperature near the workpiece and simulating heat flow through the electrostatic chuck in a thermal model of the chuck based upon the conditions. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using the model to estimate a change in thermal conditions of the coolant in the evaporator that would hold the temperature nearly constant by compensating for the next scheduled change in RF heat load, and making the change in thermal conditions of the coolant in the evaporator prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.
摘要翻译：一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过包括静电卡盘内的蒸发器的制冷回路，同时对工件 - 卡盘与导热气体接触，基于条件，感测室内的条件，包括工件附近的温度，并模拟卡盘热模型中通过静电卡盘的热流。该方法还包括获得在工件上的RF热负荷的下一个预定的改变，并且使用该模型来估计蒸发器中的冷却剂的热条件的变化，该变化将通过补偿下一个预定的RF热变化来保持温度几乎恒定在通过静电卡盘的热传播延迟的头开始的下一次预定改变之前，在蒸发器中的冷却剂的热条件的变化。

10. 发明授权

US08231799B2 Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone 有权
标题翻译：具有多个气体注入区域的等离子体反应器装置，其具有用于每个区域的时变单独的可配置气体组成
公开(公告)号：US08231799B2
公开(公告)日：2012-07-31
申请号：US11414026
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01L21/31116
摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
摘要翻译：用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。它们还包括氧气或氮气供应和稀释气体供应。控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。

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