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    • 54. 发明授权
    • Method of designing semiconductor integrated circuit device and semiconductor integrated circuit device
    • 半导体集成电路器件和半导体集成电路器件的设计方法
    • US07642601B2
    • 2010-01-05
    • US12467370
    • 2009-05-18
    • Ryuji ShibataShigeru Shimada
    • Ryuji ShibataShigeru Shimada
    • H01L23/62
    • H01L27/11807H01L27/0207H01L2924/0002H01L2924/00
    • In a semiconductor integrated circuit device and a method of designing the same, design information about circuit cells each having a desired function are described as objects according to selected purposes. The pieces of design information are registered in a cell library as cell information capable of forming any of substrate potential fixed cells and substrate potential variable cells. Further, a data sheet common to the substrate potential fixed cell and the substrate potential variable cell is offered to a user, so that the user is able to make a selection according to the user's purposes. The substrate potential fixed cells and the substrate potential variable cells are mixed together on a semiconductor chip so as to be properly used according to the functions or the like of circuit portions in which the cells are used.
    • 在半导体集成电路器件及其设计方法中,根据所选择的目的将关于具有期望功能的电路单元的设计信息描述为对象。 将设计信息作为能够形成任何一种底物电位固定细胞和底物潜在可变细胞的细胞信息登记在细胞库中。 此外,向用户提供与基板电位固定单元和基板电位变量单元共同的数据表,使得用户能够根据用户的目的进行选择。 基板电位固定电池和衬底电位可变电池在半导体芯片上混合在一起,以便根据其中使用电池的电路部分的功能等来适当地使用。
    • 55. 发明申请
    • METHOD OF DESIGNING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    • 设计半导体集成电路器件和半导体集成电路器件的方法
    • US20090218626A1
    • 2009-09-03
    • US12467370
    • 2009-05-18
    • Ryuji SHIBATAShigeru Shimada
    • Ryuji SHIBATAShigeru Shimada
    • H01L23/62
    • H01L27/11807H01L27/0207H01L2924/0002H01L2924/00
    • In a semiconductor integrated circuit device and a method of designing the same, design information about circuit cells each having a desired function are described as objects according to selected purposes. The pieces of design information are registered in a cell library as cell information capable of forming any of substrate potential fixed cells and substrate potential variable cells. Further, a data sheet common to the substrate potential fixed cell and the substrate potential variable cell is offered to a user, so that the user is able to make a selection according to the user's purposes. The substrate potential fixed cells and the substrate potential variable cells are mixed together on a semiconductor chip so as to be properly used according to the functions or the like of circuit portions in which the cells are used.
    • 在半导体集成电路器件及其设计方法中,根据所选择的目的将关于具有期望功能的电路单元的设计信息描述为对象。 将设计信息作为能够形成任何一种底物电位固定细胞和底物潜在可变细胞的细胞信息登记在细胞库中。 此外,向用户提供与基板电位固定单元和基板电位变量单元共同的数据表,使得用户能够根据用户的目的进行选择。 基板电位固定电池和衬底电位可变电池在半导体芯片上混合在一起,以便根据其中使用电池的电路部分的功能等来适当地使用。
    • 59. 发明授权
    • Method of extracting parameters for circuit simulation
    • 提取电路仿真参数的方法
    • US5490095A
    • 1996-02-06
    • US5821
    • 1993-01-19
    • Shigeru ShimadaMichael SanieiBalaji Krishnamachary
    • Shigeru ShimadaMichael SanieiBalaji Krishnamachary
    • H01L29/78G06F17/50H01L21/336
    • G06F17/5081
    • In extracting parameters for use in circuit simulation of an IC device having a plurality of insulated gate field-effect transistors (IGFETs), layout data for patterns for the IC device are prepared. The patterns include gate patterns for the IGFETs, at least one of which is a bent gate pattern such that drain and source regions are defined on opposite sides of the bent gate pattern. An index symbol data is added to the layout data, which is for the bent gate pattern, to thereby form designed pattern data. For higher accuracy of the circuit simulation, the index symbol data in the designed pattern data is detected and used to produce parameters concerning the gate patterns for the IGFETs, thereby contributing to determination of a capability of controlling electric current in the IGFETs.
    • 在提取具有多个绝缘栅场效应晶体管(IGFET)的IC器件的电路仿真中使用的参数时,准备用于IC器件的图案的布局数据。 这些图案包括用于IGFET的栅极图案,其中至少一个是弯曲栅极图案,使得漏极和源极区域限定在弯曲栅极图案的相对侧上。 索引符号数据被添加到用于弯曲栅格图案的布局数据,从而形成设计的图案数据。 为了更高的电路仿真精度,检测设计的图形数据中的索引符号数据,并用于产生关于IGFET的栅极图案的参数,从而有助于确定IGFET中控制电流的能力。