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51. 发明授权

US08779407B2 Multifunctional electrode 有权
公开(公告)号：US08779407B2
公开(公告)日：2014-07-15
申请号：US13367662
申请日：2012-02-07
申请人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
IPC分类号： H01L29/02
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

52. 发明申请

US20140183436A1 Nonvolatile Memory Device Having a Current Limiting Element 有权
标题翻译：具有限流元件的非易失性存储器件
公开(公告)号：US20140183436A1
公开(公告)日：2014-07-03
申请号：US14186726
申请日：2014-02-21
申请人： Intermolecular Inc. , SanDisk 3D LLC , Kabushiki Kaisha Toshiba
发明人： Yun Wang , Tony P. Chiang , Imran Hashim
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , G11C13/0007 , G11C13/003 , G11C2213/56 , G11C2213/76 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括至少一层电阻材料，其被配置为提高所形成的电阻式开关存储元件的开关性能和寿命。所形成的限流层或电阻层的电性能被配置为在逻辑状态编程步骤（即“设定”和“复位”步骤）期间通过添加固定的串联电阻来降低通过可变电阻层的电流在形成在非易失性存储器件中的电阻式开关存储元件中。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

53. 发明申请

US20140166969A1 NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A PASSIVE CURRENT STEERING ELEMENT 有权
标题翻译：使用隧道式氧化物作为被动电流转向元件的非易失性存储器件
公开(公告)号：US20140166969A1
公开(公告)日：2014-06-19
申请号：US14183816
申请日：2014-02-19
申请人： Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

54. 发明申请

US20140166968A1 NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHING MATERIAL 审中-公开
标题翻译：包含二极管和电阻切换材料的非易失性存储单元
公开(公告)号：US20140166968A1
公开(公告)日：2014-06-19
申请号：US14183797
申请日：2014-02-19
申请人： SANDISK 3D LLC
发明人： Scott Brad Herner , Christopher J. Petti , Tanmay Kumar
IPC分类号： H01L27/24
CPC分类号： H01L27/249 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nonvolatile memory cell is provided that includes a diode and a reversible resistance-switching element that includes a resistance-switching metal oxide or nitride, the metal oxide or nitride including only one metal. Numerous other aspects are provided.
摘要翻译：提供一种非易失性存储单元，其包括二极管和包括电阻切换金属氧化物或氮化物的可逆电阻切换元件，所述金属氧化物或氮化物仅包括一种金属。提供了许多其他方面。

55. 发明授权

US08755223B2 Three dimensional non-volatile storage with asymmetrical vertical select devices 有权
标题翻译：具有不对称垂直选择装置的三维非易失性存储
公开(公告)号：US08755223B2
公开(公告)日：2014-06-17
申请号：US13323717
申请日：2011-12-12
申请人： Roy E. Scheuerlein
发明人： Roy E. Scheuerlein
IPC分类号： G11C11/34
CPC分类号： G11C13/0033 , G11C5/025 , G11C8/08 , G11C13/0002 , G11C13/0026 , G11C13/0028 , G11C13/0069 , H01L27/0688 , H01L27/115 , H01L27/2454 , H01L27/2463 , H01L27/2481 , H01L27/249 , H01L45/08 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/165 , H01L45/1683
摘要： A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.
摘要翻译：适用于响应于在其上施加电压差而可逆地改变电导水平的存储器元件的三维阵列。存储元件跨越位于半导体衬底上方不同距离的多个平面形成。所有平面的存储元件所连接的位线从衬底垂直定向并穿过多个平面。

56. 发明申请

US20140158975A1 MEMORY CELL THAT INCLUDES A SIDEWALL COLLAR FOR PILLAR ISOLATION AND METHODS OF FORMING THE SAME 有权
标题翻译：包含用于支柱隔离的小眼镜的记忆细胞及其形成方法
公开(公告)号：US20140158975A1
公开(公告)日：2014-06-12
申请号：US14182264
申请日：2014-02-17
申请人： SanDisk 3D LLC
发明人： Scott Brad Herner
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/124 , G11C13/0002 , G11C13/0007 , G11C13/025 , G11C17/16 , G11C2213/35 , G11C2213/72 , H01L27/1021 , H01L27/2409 , H01L27/2418 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/149 , H01L45/16 , H01L45/1675
摘要： A method of forming a memory cell is provided. The method includes forming a steering element pillar having a first stiffness and a sidewall, forming a sidewall collar along at least a portion of the sidewall of the steering element pillar, the sidewall collar having a second stiffness, wherein the second stiffness is greater than the first stiffness, and forming a memory element coupled to the steering element pillar. Numerous other aspects are provided.
摘要翻译：提供一种形成存储单元的方法。该方法包括形成具有第一刚度和侧壁的转向元件柱，沿着转向元件柱的侧壁的至少一部分形成侧壁套环，该侧壁套圈具有第二刚度，其中第二刚度大于第一刚度，以及形成耦合到转向元件柱的存储元件。提供了许多其他方面。

57. 发明授权

US08748859B2 Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars 有权
标题翻译：非易失性存储器阵列包括具有用于电隔离柱的二极管的共享二极管组件部分的轨道堆叠
公开(公告)号：US08748859B2
公开(公告)日：2014-06-10
申请号：US13441805
申请日：2012-04-06
申请人： Kang-Jay Hsia , Christopher J Petti , Calvin K Li
发明人： Kang-Jay Hsia , Christopher J Petti , Calvin K Li
IPC分类号： H01L29/02
CPC分类号： H01L27/1021
摘要： An integrated circuit including vertically oriented diode structures between conductors and methods of fabricating the same are provided. Two-terminal devices such as passive element memory cells can include a diode steering element in series with an antifuse and/or other state change element. The devices are formed using pillar structures at the intersections of upper and lower sets of conductors. The height of the pillar structures are reduced by forming part of the diode for each pillar in a rail stack with one of the conductors. A diode in one embodiment can include a first diode component of a first conductivity type and a second diode component of a second conductivity type. A portion of one of the diode components is divided into first and second portions with one on the portions being formed in the rail stack where it is shared with other diodes formed using pillars at the rail stack.
摘要翻译：提供了一种在导体之间包括垂直取向的二极管结构的集成电路及其制造方法。诸如无源元件存储单元的两端器件可以包括与反熔丝和/或其他状态改变元件串联的二极管操作元件。这些装置在上下导体组的交点处使用支柱结构形成。通过在轨道堆叠中的每个支柱的一个导体上形成二极管的一部分来减小柱结构的高度。一个实施例中的二极管可以包括第一导电类型的第一二极管部件和第二导电类型的第二二极管部件。二极管部件之一的一部分被分成第一和第二部分，其中一部分形成在轨道堆叠中，其中与在轨道堆叠处使用柱形成的其他二极管共用。

58. 发明申请

US20140151625A1 NONVOLATILE MEMORY DEVICE USING A VARISTOR AS A CURRENT LIMITER ELEMENT 有权
标题翻译：使用VARISTOR作为当前限制元素的非易失性存储器件
公开(公告)号：US20140151625A1
公开(公告)日：2014-06-05
申请号：US14176882
申请日：2014-02-10
申请人： Kabushiki Kaisha Toshiba , SANDISK 3D LLC
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加设置在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一些实施例中，限流部件包括变阻器，其是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

59. 发明授权

US08730720B2 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material 有权
标题翻译：非易失性存储单元通过增加多晶半导体材料的顺序来操作
公开(公告)号：US08730720B2
公开(公告)日：2014-05-20
申请号：US13925917
申请日：2013-06-25
申请人： SanDisk 3D LLC
发明人： Scott Brad Herner , Abhijit Bandyopadhyay
IPC分类号： G11C11/36 , G11C11/34
CPC分类号： G11C11/36 , G11C5/02 , G11C11/39 , G11C17/06 , G11C17/16 , H01L27/1021
摘要： A memory cell is provided that includes a first conductor, a second conductor, and a semiconductor junction diode between the first and second conductors. The semiconductor junction diode is not in contact with a material having a lattice mismatch of less than 12 percent with the semiconductor junction diode. Numerous other aspects are provided.
摘要翻译：提供了一种存储单元，其包括在第一和第二导体之间的第一导体，第二导体和半导体结二极管。半导体结二极管与半导体结二极管不与具有小于12％的晶格失配的材料接触。提供了许多其他方面。

60. 发明授权

US08724369B2 Composition of memory cell with resistance-switching layers 有权
标题翻译：具有电阻切换层的存储单元的组成
公开(公告)号：US08724369B2
公开(公告)日：2014-05-13
申请号：US13408394
申请日：2012-02-29
申请人： Tong Zhang , Timothy James Minvielle , Yung-Tin Chen
发明人： Tong Zhang , Timothy James Minvielle , Yung-Tin Chen
IPC分类号： G11C11/00 , G11C13/00
CPC分类号： G11C13/0007 , G11C5/02 , G11C8/10 , G11C13/0002 , G11C13/0004 , G11C13/0069 , G11C2013/0073 , G11C2213/55 , G11C2213/71 , H01L27/2409 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1608
摘要： A memory cell including a first electrode, a second electrode and a first resistance-switching layer located between the first and second electrodes. The first resistance-switching layer comprises hafnium silicon oxynitride.
摘要翻译：一种存储单元，包括位于第一和第二电极之间的第一电极，第二电极和第一电阻切换层。第一电阻切换层包括铪硅氮氧化物。

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