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61. 发明授权

US09013016B2 MR device with synthetic free layer structure 有权
标题翻译：具有合成自由层结构的MR器件
公开(公告)号：US09013016B2
公开(公告)日：2015-04-21
申请号：US14166373
申请日：2014-01-28
申请人： Headway Technologies, Inc.
发明人： Tong Zhao , Hui-Chaun Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： H01L29/82 , H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/09 , G11B5/39 , G11C11/16 , H01F10/32 , H01F41/30 , H01L43/12
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01L43/12
摘要： A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel coupling layers. The ferromagnetic layer closest to the transition layer must include CoFeB while the furthermost layer is required to have low Hc as well as a low and negative lambda value. One possibility for the central ferromagnetic layer is NiFe but this is not mandatory.
摘要翻译：描述具有大输出信号以及高信噪比的磁阻装置及其形成方法。通过将自由层扩展成包括通过反平行耦合层彼此分离的至少三个铁磁层的多层层压体来实现这一改进的性能。最接近过渡层的铁磁层必须包括CoFeB，而最外层需要具有低Hc以及低和负的λ值。中心铁磁层的一种可能性是NiFe，但这不是强制性的。

62. 发明申请

US20150092525A1 THERMALLY-ASSISTED MAGNETIC RECORDING HEAD HAVING A HEAT SINK 有权
标题翻译：热辅助磁记录头
公开(公告)号：US20150092525A1
公开(公告)日：2015-04-02
申请号：US14041607
申请日：2013-09-30
申请人： Hironori ARAKI , Yoshitaka SASAKI , Hiroyuki ITO , Shigeki TANEMURA , Yukinori IKEGAWA
发明人： Hironori ARAKI , Yoshitaka SASAKI , Hiroyuki ITO , Shigeki TANEMURA , Yukinori IKEGAWA
IPC分类号： G11B5/48
CPC分类号： G11B5/6088 , G02B6/00 , G11B5/3116 , G11B5/313 , G11B5/3133 , G11B5/3136 , G11B5/314 , G11B5/40 , G11B2005/0021 , G11B2005/0024
摘要： A thermally-assisted magnetic recording head includes a main pole, a waveguide, a plasmon generator, and a heat sink. The heat sink includes a first metal layer, a second metal layer, and an intermediate layer. The intermediate layer is interposed between the first metal layer and the second metal layer. Each of the first and second metal layers is formed of a metal material. The intermediate layer is formed of a material that is higher in Vickers hardness than the metal material used to form the first metal layer and the metal material used to form the second metal layer.
摘要翻译：热辅助磁记录头包括主极，波导，等离子体激元发生器和散热器。散热器包括第一金属层，第二金属层和中间层。中间层介于第一金属层和第二金属层之间。第一和第二金属层中的每一个由金属材料形成。中间层由维氏硬度高于用于形成第一金属层的金属材料和用于形成第二金属层的金属材料形成的材料形成。

63. 发明申请

US20150085629A1 THERMALLY ASSISTED MAGNETIC HEAD, METHOD OF MANUFACTURING THE SAME, HEAD GIMBAL ASSEMBLY, AND HARD DISK DRIVE 有权
标题翻译：热辅助磁头，其制造方法，头部组件和硬盘驱动
公开(公告)号：US20150085629A1
公开(公告)日：2015-03-26
申请号：US14035015
申请日：2013-09-24
申请人： Yoshitaka SASAKI , Hiroyuki ITO , Hironori ARAKI , Shigeki TANEMURA , Kazuki SATO , Ryuji FUJII
发明人： Yoshitaka SASAKI , Hiroyuki ITO , Hironori ARAKI , Shigeki TANEMURA , Kazuki SATO , Ryuji FUJII
IPC分类号： G11B5/48 , G11B5/127
CPC分类号： G11B5/314 , G02B6/1226 , G11B5/3116 , G11B5/3163 , G11B2005/0021 , Y10T29/49032
摘要： A thermally assisted magnetic head includes a main magnetic pole layer, a near-field light generating layer having a generating end part generating near-field light arranged within a medium-opposing surface, and an optical waveguide guiding light to the near-field light generating layer. The near-field light generating layer has a laminated structure in which a first thin-film metal layer formed in a thin film form along a direction intersecting the medium-opposing surface and a second thin-film metal layer formed in a thin film form and formed using a second metal larger in hardness than a first metal forming the first thin-film metal layer are alternately laminated. Further, in the second thin-film metal layer, a defect part is formed, the defect part is a part smaller in thickness than another part or is a hole part, and a flat layer part other than the defect part surrounds the defect part.
摘要翻译：一种热辅助磁头包括主磁极层，具有产生在介质相对表面内布置的近场光的产生端部分的近场光产生层和将光引导到近场光产生层。近场光产生层具有层叠结构，其中沿着与介质相对表面相交的方向形成薄膜的第一薄膜金属层和形成为薄膜形式的第二薄膜金属层，以及使用比形成第一薄膜金属层的第一金属硬度大的第二金属交替层压。此外，在第二薄膜金属层中，形成缺陷部，缺陷部的厚度比另一部分小，也可以是孔部，缺陷部以外的平坦部包围缺损部。

64. 发明授权

US08981503B2 STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain 有权
标题翻译： STT-MRAM参考层具有显着减少的杂散场并由单个磁畴组成
公开(公告)号：US08981503B2
公开(公告)日：2015-03-17
申请号：US13421963
申请日：2012-03-16
申请人： Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
发明人： Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
IPC分类号： H01L43/08 , G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/12
摘要： An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.
摘要翻译：形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。

65. 发明授权

US08976481B1 Touch down detection with HDI sensor DC mode 有权
标题翻译：使用HDI传感器直流模式进行触摸屏检测
公开(公告)号：US08976481B1
公开(公告)日：2015-03-10
申请号：US14182377
申请日：2014-02-18
申请人： SAE Magnetics (H.K.) Ltd. , Headway Technologies, Inc.
发明人： Qinghua Zeng , Ellis Cha , Soramany Ka
IPC分类号： G11B21/02 , G11B5/09
CPC分类号： G11B5/607 , G11B5/6076
摘要： Methods are provided for determining the heater power level of a dynamic flying height (DFH) type write head at which a touch down (TD) occurs. Each method makes use of the DC component of a head-disk interference (HDI) sensor and the determination of the TD heater energy is deduced from certain characteristics of the function relating heater power to HDI DC signal strength. Characteristics that provide reliable indication of a TD include points of minimum slope, structure of the slope's slope and the properties of a linear fit to the slope if the slope does not converge to a consistent value. It is found that the use of all methods in combination allow a reliable TD determination under virtually all conditions.
摘要翻译：提供了用于确定触发（TD）发生的动态飞行高度（DFH）型写入头的加热器功率电平的方法。每种方法利用头盘干扰（HDI）传感器的直流分量，并从加热器功率与HDI直流信号强度相关的功能的某些特性推导出TD加热器能量的确定。提供TD的可靠指示的特征包括最小坡度点，坡度斜率的结构以及如果斜率不会收敛到一致的值，则对斜率进行线性拟合的属性。发现组合使用所有方法可在几乎所有条件下进行可靠的TD测定。

66. 发明授权

US08929029B2 High data rate writer design 有权
标题翻译：高数据率写入器设计
公开(公告)号：US08929029B2
公开(公告)日：2015-01-06
申请号：US13863495
申请日：2013-04-16
申请人： Headway Technologies, Inc.
发明人： Tai Min , Suping Song , Yuhui Tang , Lijie Guan
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/315
摘要： A magnetic write head is fabricated with its main pole attached to and magnetically coupled to a tapered yoke. The tapered yoke can be a top yoke (on the trailing side of the pole), a bottom yoke (on the leading side of the pole) or a combination of top and bottom configurations. The tapered portion of the yoke is at the distal end of the yoke and it is an extension of an otherwise uniformly thick yoke. It is found that the taper enables the yoke to be close to the ABS for better response times and a high data rate, while simultaneously being distant, producing less field disturbance by the shields and corresponding improvement of BER, and ATE/WATE. A taper of 45° is optimal for its production of uniform magnetization of the pole and optimal response times.
摘要翻译：制造磁性写头，其主极附接到磁耦合到锥形轭。锥形轭可以是顶部磁轭（在磁极的后侧），底部磁轭（在磁极的前导侧）或顶部和底部结构的组合。轭的锥形部分位于轭的远端，并且是其它均匀厚的轭的延伸部。已经发现，锥形使轭能够靠近ABS以获得更好的响应时间和高数据速率，同时远程，由屏蔽产生更少的场干扰和相应的BER改善和ATE / WATE。 45°的锥度对于产生极的均匀磁化和最佳响应时间是最佳的。

67. 发明申请

US20140347918A1 MRAM Write Pulses to Dissipate Intermediate State Domains 有权
标题翻译： MRAM写脉冲消散中间状态域
公开(公告)号：US20140347918A1
公开(公告)日：2014-11-27
申请号：US13899623
申请日：2013-05-22
申请人： Headway Technologies, Inc.
发明人： Yuan-Jen Lee , Po-Kang Wang , Guenole Jan
IPC分类号： G11C5/00
CPC分类号： G11C11/1675 , G11C11/00 , G11C11/1659 , G11C11/1693 , G11C29/12015 , G11C29/56
摘要： A write method for a STT-RAM MTJ is disclosed that substantially reduces the bit error rate caused by intermediate domain states generated during write pulses. The method includes a plurality of “n” write periods or pulses and “n−1” domain dissipation periods where a domain dissipation period separates successive write periods. During each pulse, a write current is applied in a first direction across the MTJ and during each domain dissipation period, a second current with a magnitude equal to or less than the read current is applied in an opposite direction across the MTJ. Alternatively, no current is applied during one or more domain dissipation periods. Each domain dissipation period has a duration of 1 to 10 ns that is equal to or greater than the precession period of free layer magnetization in the absence of spin torque transfer current.
摘要翻译：公开了一种用于STT-RAM MTJ的写入方法，其基本上减少了由写入脉冲期间产生的中间域状态引起的误码率。该方法包括多个“n”个写入周期或脉冲以及“n-1”个域耗散周期，其中域耗散周期分隔连续写入周期。在每个脉冲期间，跨越MTJ的第一方向施加写入电流，并且在每个域耗散周期期间，跨越MTJ的相反方向施加具有等于或小于读取电流的幅度的第二电流。或者，在一个或多个域耗散周期期间不施加电流。每个域耗散周期的持续时间为1到10ns，等于或大于在没有自旋转矩传递电流的情况下自由层磁化的进动周期。

68. 发明授权

US08896965B2 Non-uniform write gap perpendicular writer for shingle writing 有权
标题翻译：用于瓦片写入的非均匀写入间隙垂直写入器
公开(公告)号：US08896965B2
公开(公告)日：2014-11-25
申请号：US14033736
申请日：2013-09-23
申请人： Headway Technologies, Inc.
发明人： Lijie Guan
IPC分类号： G11B5/23 , G11B5/31 , G11B5/10 , G11B5/127
CPC分类号： G11B5/23 , C23C14/06 , G11B5/1278 , G11B5/3176 , G11B5/6082 , G11B5/84 , G11B5/85 , G11B5/851
摘要： A PMR writer is disclosed that includes at least one of a recessed center section in the write pole trailing edge and a center recessed trailing shield to improve the field gradient at track edge. In all embodiments, there is a non-uniform write gap between the trailing edge and the trailing shield. The recessed portion of the write pole trailing edge and/or center recess of the trailing shield has a thickness from 10 to 40 nm in a down-track direction and a width in a cross-track direction of 20 to 200 nm. The distance between the center recess and a corner of the trailing edge is from 20 to 80 nm. A sequence of steps is provided to fabricate the two embodiments of the present invention.
摘要翻译：公开了一种PMR写入器，其包括写磁极后缘中的凹入中心部分和中心凹陷后屏蔽中的至少一个，以改善磁道边缘处的磁场梯度。在所有实施例中，在后缘和后屏蔽之间存在不均匀的写入间隙。后屏蔽的写磁极后缘和/或中心凹部的凹陷部分在下行轨道方向上具有10至40nm的厚度和20至200nm的交叉磁迹方向上的宽度。中心凹部与后缘的角部之间的距离为20〜80nm。提供了一系列步骤来制造本发明的两个实施例。

69. 发明授权

US08852760B2 Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer 有权
标题翻译：通过插入硼粉尘层，磁性器件应用具有高热稳定性的自由层
公开(公告)号：US08852760B2
公开(公告)日：2014-10-07
申请号：US13448557
申请日：2012-04-17
申请人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L29/82 , G01R33/09 , G11B5/39
CPC分类号： G01R33/091 , G11B5/3906 , H01F10/123 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.
摘要翻译：在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能。每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

70. 发明授权

US08837083B1 Magnetic head for perpendicular magnetic recording including a heater 有权
标题翻译：用于垂直磁记录的磁头，包括一个加热器
公开(公告)号：US08837083B1
公开(公告)日：2014-09-16
申请号：US13974732
申请日：2013-08-23
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Shigeki Tanemura , Kazuki Sato , Tatsuya Shimizu
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Shigeki Tanemura , Kazuki Sato , Tatsuya Shimizu
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3133 , G11B5/315 , G11B5/607
摘要： A magnetic head includes a main pole, a return path section, a heater for heating the main pole, and a metal portion. The metal portion is isolated from the return path section and disposed such that the heater is interposed between the main pole and the metal portion. The return path section has a contact surface in contact with the main pole. The metal portion is located farther from the medium facing surface than is the contact surface. The main pole and the metal portion define therebetween a receiving space for receiving at least part of the heater. The at least part of the heater is received in the receiving space.
摘要翻译：磁头包括主极，返回路径部分，用于加热主极的加热器和金属部分。金属部分与返回路径部隔离，并且设置成使得加热器介于主极和金属部分之间。返回路径部分具有与主极接触的接触表面。金属部分比接触表面远离介质面向表面。主极和金属部分在其间限定有用于接收加热器的至少一部分的容纳空间。加热器的至少一部分被接收在接收空间中。

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