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1. 发明授权

US11892526B2 Magnetoresistive sensor and fabrication method for a magnetoresistive sensor 有权
公开(公告)号：US11892526B2
公开(公告)日：2024-02-06
申请号：US17324446
申请日：2021-05-19
申请人： Infineon Technologies AG
发明人： Bernhard Endres , Klemens Pruegl
IPC分类号： G01R33/09 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85 , H01F10/32 , H01F41/30 , G01R33/00
CPC分类号： G01R33/093 , G01R33/098 , H01F10/3263 , H01F10/3272 , H01F41/307 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85 , G01R33/0052 , Y10T428/1114
摘要： Exemplary embodiments are directed to magnetoresistive sensors and corresponding fabrication methods for magnetoresistive sensors. One example of a magnetoresistive sensor includes a layer stack, wherein the layer stack includes a reference layer having a fixed reference magnetization, wherein the fixed reference magnetization has a first magnetic orientation. The layer stack furthermore includes a magnetically free system of a plurality of layers, wherein the magnetically free system has a magnetically free magnetization, wherein the magnetically free magnetization is variable in the presence of an external magnetic field, and wherein the magnetically free magnetization has a second magnetic orientation in a ground state. The magnetically free system has two ferromagnetic layers and an interlayer, wherein the interlayer is arranged between the two ferromagnetic layers and includes magnesium oxide. The layer stack furthermore includes a barrier layer, which is arranged between the reference layer and the magnetically free system and includes magnesium oxide.

2. 发明授权

US10014045B2 Three-dimensional magnetic memory with multi-layer data storage layers 有权
公开(公告)号：US10014045B2
公开(公告)日：2018-07-03
申请号：US14555235
申请日：2014-11-26
申请人： Western Digital Technologies, Inc.
发明人： Olav Hellwig , Bruce D. Terris , Jan-Ulrich Thiele
IPC分类号： G11C11/16 , H01L27/22
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , G11C2213/71 , H01L27/222 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.

3. 发明授权

US09484049B2 TMR device with novel free layer 有权
标题翻译： TMR器件具有新颖的自由层
公开(公告)号：US09484049B2
公开(公告)日：2016-11-01
申请号：US14297698
申请日：2014-06-06
申请人： Headway Technologies, Inc.
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/33 , G11B5/39 , B82Y10/00 , B82Y25/00 , G01R33/09
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/33 , G11B5/3929 , G11B2005/3996 , Y10T428/1114
摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (
摘要翻译：公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。

4. 发明申请

US20160284983A1 CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave Assisted Magnetic Recording 审中-公开
标题翻译：用于微波辅助磁记录的具有垂直各向异性的CoFe / Ni多层膜
公开(公告)号：US20160284983A1
公开(公告)日：2016-09-29
申请号：US15162059
申请日：2016-05-23
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： H01L43/10 , G11C11/16 , G11B5/39 , H01L27/22 , H01L43/02
CPC分类号： G11B5/235 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11B5/1278 , G11B5/3153 , G11B5/33 , G11B5/3909 , G11B5/3967 , G11B2005/0024 , G11B2005/3996 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0579 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/305 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A spin transfer oscillator (STO) with a seed/FGL/spacer/SIL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)YFeCo laminated field generation layer (FGL). The spin injection layer (SIL) may be laminated with a (A1/A2)XFeCo configuration. The FeCo layer in the SIL is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The (A1/A2)Y laminate (y=5 to 30) in the FGL may be exchange coupled with a high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO is typically formed between a main pole and trailing shield in a write head.
摘要翻译：公开了具有种子/ FGL /间隔物/ SIL /封盖结构的自旋转移振荡器（STO），其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强垂直磁各向异性（A1 / A2）YFeCo层叠场产生层（FGL）中的（PMA）。自旋注入层（SIL）可以层叠有（A1 / A2）XFeCo构型。 SIL中的FeCo层与（A1 / A2）X层叠体交换（x为5〜50），以提高坚固性。 FGL中的（A1 / A2）Y层叠体（y = 5〜30）可以与高B层交换耦合，以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO通常形成在写入头中的主极和后屏蔽之间。

5. 发明授权

US09368176B2 Scalable magnetoresistive element 有权
标题翻译：可扩展磁阻元件
公开(公告)号：US09368176B2
公开(公告)日：2016-06-14
申请号：US14272505
申请日：2014-05-08
申请人： Alexander Mikhailovich Shukh
发明人： Alexander Mikhailovich Shukh
IPC分类号： G01R33/09 , G11C11/16
CPC分类号： G11C11/161 , G01R33/093 , G01R33/098 , Y10T428/1114
摘要： One embodiment of a magnetoresistive element comprises: a free ferromagnetic layer comprising a reversible magnetization direction directed substantially perpendicular to a film surface in its equilibrium state; a pinned ferromagnetic layer comprising a fixed magnetization direction directed substantially perpendicular to the film surface; a nonmagnetic tunnel barrier layer disposed between the free ferromagnetic layer and the pinned ferromagnetic layer and having a direct contact with the free and pinned ferromagnetic layers; a first nonmagnetic conductive layer disposed adjacent to and having a direct contact with a side of a free ferromagnetic layer opposite to the tunnel barrier layer; and a second nonmagnetic conductive layer disposed adjacent to a side of the pinned ferromagnetic layer opposite to the tunnel barrier layer, wherein the free ferromagnetic layer and the pinned ferromagnetic layers comprise at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selected from the group consisting from V, Cr, and Mo, and at least one element selected from the group consisting of B, P, C, and Si, and wherein the first nonmagnetic conductive layer comprises an oxide. Other embodiments are described as shown.
摘要翻译：磁阻元件的一个实施例包括：自由铁磁层，包括在其平衡状态下基本上垂直于膜表面指向的可逆磁化方向; 钉扎铁磁层，包括基本垂直于膜表面的固定磁化方向; 非磁性隧道势垒层，设置在自由铁磁层和被钉扎铁磁层之间，并且与自由和固定的铁磁层直接接触; 与第一非磁性导电层相邻并且与与隧道势垒层相对的自由铁磁层的一侧直接接触; 以及第二非磁性导电层，其与所述被钉扎的铁磁层的与所述隧道势垒层相对的一侧相邻设置，其中所述自由铁磁层和所述固定的铁磁层包括选自Fe，Co和Ni中的至少一种元素，选自V，Cr和Mo中的至少一种元素，以及选自B，P，C和Si中的至少一种元素，其中第一非磁性导电层包含氧化物。其他实施例如图所示进行描述。

6. 发明授权

US09214172B2 Method of manufacturing a magnetic read head 有权
标题翻译：磁读头的制造方法
公开(公告)号：US09214172B2
公开(公告)日：2015-12-15
申请号：US14230962
申请日：2014-03-31
申请人： Western Digital (Fremont), LLC
发明人： Shaoping Li , Yuankai Zheng , Gerardo A. Bertero , Qunwen Leng , Michael L. Mallary , Rongfu Xiao , Ming Mao , Zhihong Zhang , Anup G. Roy , Chen Jung Chien , Zhitao Diao , Ling Wang
IPC分类号： G11B5/127 , H04R31/00 , G11B5/39 , G11B5/31
CPC分类号： G11B5/3909 , G11B5/3163 , G11B5/3912 , G11B5/398 , Y10T428/1114
摘要： A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
摘要翻译：提供具有带标签的AFM层和扩展的钉扎层的隧道磁阻（TMR）读取传感器及其制造方法。 TMR读取传感器具有从空气轴承表面凹入的AFM层，从而减少屏蔽与屏蔽距离。

7. 发明申请

US20150248902A1 TMR Device with Novel Free Layer Structure 审中-公开
标题翻译：具有新型自由层结构的TMR器件
公开(公告)号：US20150248902A1
公开(公告)日：2015-09-03
申请号：US14712942
申请日：2015-05-15
申请人： Headway Technologies, Inc.
发明人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： G11B5/39
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, CoBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is
摘要翻译：一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，CoBM或CoBLM制成的至少一个含B（BC）层和由CoFe，CoFeM制成的多个非B含（NBC）层的自由层，或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。一个实施例由（NBC / BC）n表示，其中n≥2。第二实施例由（NBC / BC）n / NBC表示，其中n≥1。在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。总自由层厚度<100埃。这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

8. 发明授权

US09034491B2 Low resistance area magnetic stack 有权
标题翻译：低电阻面积磁堆
公开(公告)号：US09034491B2
公开(公告)日：2015-05-19
申请号：US13690532
申请日：2012-11-30
申请人： Seagate Technology LLC
发明人： Vijay Karthik Sankar , Mark William Covington
IPC分类号： G11B5/39 , G01R33/00 , G11B5/31 , H01F10/32 , G11C11/16 , H01L43/08 , H01L43/12 , G01R33/09
CPC分类号： G11B5/313 , G01R33/00 , G01R33/093 , G11B5/3909 , G11C11/16 , G11C11/161 , H01F10/32 , H01F10/3254 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic element may generally be configured at least with a magnetic stack having a multilayer barrier structure disposed between first and second ferromagnetic layers. The multilayer barrier structure can have a binary compound layer disposed between first and second alloy layers with the binary compound having a metal element and a second element where at least one alloy layer has the metal element and a third element dissimilar from the second element.
摘要翻译：磁性元件通常可以至少配置有具有设置在第一和第二铁磁层之间的多层阻挡结构的磁性堆叠。多层阻挡结构可以具有设置在第一和第二合金层之间的二元化合物层，二元化合物具有金属元素和第二元素，其中至少一个合金层具有金属元素和与第二元素不同的第三元素。

9. 发明申请

US20150109702A1 MAGNETIC READ HEAD WITH ANTIFERROMAGNETIC LAYER 有权
标题翻译：磁性读取头与抗病毒层
公开(公告)号：US20150109702A1
公开(公告)日：2015-04-23
申请号：US14230962
申请日：2014-03-31
申请人： Western Digital (Fremont), LLC
发明人： SHAOPING LI , YUANKAI ZHENG , GERARDO A. BERTERO , QUNWEN LENG , MICHAEL L. MALLARY , RONGFU XIAO , MING MAO , ZHIHONG ZHANG , ANUP G. ROY , CHEN JUNG CHIEN , ZHITAO DIAO , LING WANG
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3909 , G11B5/3163 , G11B5/3912 , G11B5/398 , Y10T428/1114
摘要： A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
摘要翻译：提供具有带标签的AFM层和扩展的钉扎层的隧道磁阻（TMR）读取传感器及其制造方法。 TMR读取传感器具有从空气轴承表面凹入的AFM层，从而减少屏蔽与屏蔽距离。

10. 发明申请

US20140346518A1 MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING LAYER WITH PERPENDICULAR MAGNETIC ANISOTROPY FILM 审中-公开
标题翻译：磁记录，包括记录数据记录层，带有全息磁性膜片
公开(公告)号：US20140346518A1
公开(公告)日：2014-11-27
申请号：US14454914
申请日：2014-08-08
申请人： Renesas Electronics Corporation
发明人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , G01R33/091 , G01R33/098 , G11C11/02 , G11C11/14 , G11C11/15 , G11C11/161 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic memory includes a magnetic memory, including a ferromagnetic underlayer including a magnetic material, a non-magnetic intermediate layer disposed on the underlayer, a ferromagnetic data recording layer formed on the intermediate layer and having a perpendicular magnetic anisotropy, a reference layer connected to the data recording layer across a non-magnetic layer, and first and second magnetization fixed layers disposed in contact with a bottom face of the underlayer. The data recording layer includes a magnetization free region having a reversible magnetization and opposed to the reference layer, a first magnetization fixed region coupled to a first border of the magnetization free layer and having a magnetization fixed in a first direction, and a second magnetization fixed region coupled to a second border of the magnetization free layer and having a magnetization fixed in a second direction opposite to the first direction.
摘要翻译：磁存储器包括磁存储器，其包括包括磁性材料的铁磁底层，设置在底层上的非磁性中间层，形成在中间层上并具有垂直磁各向异性的铁磁数据记录层，参考层连接到穿过非磁性层的数据记录层以及与底层的底面接触设置的第一和第二磁化固定层。数据记录层包括具有可逆磁化并与参考层相对的无磁化区域，耦合到磁化自由层的第一边界并具有沿第一方向固定的磁化的第一磁化固定区域和固定区域，其耦合到所述磁化自由层的第二边界并且具有在与所述第一方向相反的第二方向上固定的磁化。

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