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61. 发明申请

US20140035500A1 SENSORLESS MOTOR APPARATUS, BACK EMF DETECTOR AND DETECTION METHOD THEREOF 有权
标题翻译：无感电动机装置，反电动势检测装置及其检测方法
公开(公告)号：US20140035500A1
公开(公告)日：2014-02-06
申请号：US13563701
申请日：2012-07-31
申请人： Yi-Chi Lin , Chih-Ping Yin , Shih-Jen Yang
发明人： Yi-Chi Lin , Chih-Ping Yin , Shih-Jen Yang
IPC分类号： H02P6/18
CPC分类号： H02P6/085 , H02P6/182
摘要： A back electromotive force (EMF) detector for a motor is disclosed. The back EMF detector includes an upper switch, a lower switch, a current sensing resistor and a first to third resistance providers. The upper and lower switches are controlled by a first and a second control signal respectively. The current sensing resistor coupled between the lower switch and a reference ground voltage. A first terminal of the first resistance provider coupled to the upper switch, and a back EMF detection result is generated at a second terminal of the first resistance provider. The second resistance provider coupled between the reference ground voltage and the first resistance provider. The third resistance provider is coupled between the coupled terminal of the first and second resistance provider and the lower switch. Wherein, the first to the third resistance providers are determined by at least one characteristic parameter of the motor.
摘要翻译：公开了一种用于电动机的反电动势（EMF）检测器。反电动势检测器包括上开关，下开关，电流感测电阻器和第一至第三电阻提供器。上下开关分别由第一和第二控制信号控制。电流检测电阻耦合在下开关和参考接地电压之间。耦合到上部开关的第一电阻提供器的第一端子和在第一电阻提供器的第二端子处产生反电动势检测结果。第二电阻提供器耦合在参考地电压和第一电阻提供器之间。第三电阻提供器耦合在第一和第二电阻提供器的耦合端与下开关之间。其中，第一至第三阻力提供者由电动机的至少一个特征参数决定。

62. 发明申请

US20130271271A1 RECEIVING CONTROL CIRCUIT FOR A WALL CONTROL INTERFACE WITH PHASE MODULATION AND DETECTION FOR POWER MANAGEMENT 有权
标题翻译：接收控制电路，进行相位调制和功率管理检测
公开(公告)号：US20130271271A1
公开(公告)日：2013-10-17
申请号：US13894444
申请日：2013-05-15
申请人： Ta-Yung Yang , Jenn-Yu G. Lin , Yi-Chi Lin , Cheng-Chi Hsueh
发明人： Ta-Yung Yang , Jenn-Yu G. Lin , Yi-Chi Lin , Cheng-Chi Hsueh
IPC分类号： G08C19/16
CPC分类号： G08C19/16 , H02M5/2573 , Y10T307/832
摘要： A wall control interface for power management includes a transmitting circuit that generates a switching signal to control a switch and achieve a phase modulation to a power line signal in response to a transmitting-data. A receiving circuit is coupled to detect the phase of the power line signal for generating a data signal and a receiving-data in response to the phase of the power line signal. The receiving circuit further generates a control signal to control power of a load in accordance with the data signal or the receiving-data. The phase modulation is achieved by controlling a turn-on angle of the power line signal. The switch remains in a turn-on state during the normal condition, which achieves good power and low current harmonic. The phase modulation is only performed during the communication of the power management.
摘要翻译：用于电力管理的墙壁控制接口包括产生开关信号以控制开关并且响应于发送数据实现对电力线信号的相位调制的发送电路。接收电路被耦合以检测用于响应于电力线信号的相位的数据信号和接收数据的电力线信号的相位。接收电路还根据数据信号或接收数据产生控制负载的功率的控制信号。通过控制电力线信号的接通角来实现相位调制。在正常情况下，开关保持导通状态，实现良好的功率和低电流谐波。相位调制仅在电源管理通讯期间进行。

63. 发明授权

US08558349B2 Integrated circuit for a high-side transistor driver 有权
标题翻译：集成电路用于高端晶体管驱动器
公开(公告)号：US08558349B2
公开(公告)日：2013-10-15
申请号：US11464075
申请日：2006-08-11
申请人： Chiu-Chih Chiang , Chih-Feng Huang , Ta-yung Yang
发明人： Chiu-Chih Chiang , Chih-Feng Huang , Ta-yung Yang
IPC分类号： H01L21/70
CPC分类号： H01L27/0629
摘要： The high voltage integrated circuit is disclosed. The high voltage integrated circuit comprises a low voltage control circuit, a floating circuit, a P substrate, a deep N well disposed in the substrate and a plurality of P wells disposed in the P substrate. The P wells and deep N well serve as the isolation structures. The low voltage control circuit is located outside the deep N well and the floating circuit is located inside the deep N well. The deep N well forms a high voltage junction barrier for isolating the control circuit from the floating circuit.
摘要翻译：公开了高压集成电路。高压集成电路包括低压控制电路，浮置电路，P衬底，设置在衬底中的深N阱以及设置在P衬底中的多个P阱。 P井和深N井作为隔离结构。低压控制电路位于深N阱外部，浮动电路位于深N阱内。深N阱形成用于将控制电路与浮置电路隔离的高压结屏障。

64. 发明授权

US08542507B2 Adaptive synchronous rectification control method and apparatus 有权
标题翻译：自适应同步整流控制方法及装置
公开(公告)号：US08542507B2
公开(公告)日：2013-09-24
申请号：US13069534
申请日：2011-03-23
申请人： Jhih-Da Hsu , Chia-Yo Yeh , Chou-Sheng Wang , Ying-Chieh Su , Rui-Hong Lu
发明人： Jhih-Da Hsu , Chia-Yo Yeh , Chou-Sheng Wang , Ying-Chieh Su , Rui-Hong Lu
IPC分类号： H02H7/125 , H02M3/335
CPC分类号： H02M3/33592 , Y02B70/1475
摘要： An adaptive synchronous rectification control circuit and a control method are developed. The control circuit comprises an adaptive circuit that generates a reference signal in response to a detection signal of a power converter. A clamped circuit clamps the reference signal at a threshold voltage if the reference signal equals or is greater than the threshold voltage. A switching circuit generates a control signal to control a synchronous switch of the power converter in response to the detection signal and the reference signal. The control method generates the reference signal in response to the detection signal. The reference signal is clamped at the threshold voltage if the reference signal equals or is greater than the threshold voltage. The method further generates the control signal to control the synchronous switch of the power converter in response to the detection signal and the reference signal.
摘要翻译：开发了自适应同步整流控制电路和控制方法。控制电路包括响应于功率转换器的检测信号产生参考信号的自适应电路。如果参考信号等于或大于阈值电压，钳位电路将参考信号钳位在阈值电压。切换电路响应于检测信号和参考信号产生控制信号以控制功率转换器的同步开关。控制方法响应于检测信号产生参考信号。如果参考信号等于或大于阈值电压，则参考信号被钳位在阈值电压。该方法还响应于检测信号和参考信号产生控制信号以控制功率转换器的同步开关。

65. 发明授权

US08492849B2 High side semiconductor structure 有权
标题翻译：高边半导体结构
公开(公告)号：US08492849B2
公开(公告)日：2013-07-23
申请号：US12832727
申请日：2010-07-08
申请人： Han-Chung Tai , Hsin-Chih Chiang
发明人： Han-Chung Tai , Hsin-Chih Chiang
IPC分类号： H01L31/119 , H01L21/336
CPC分类号： H01L21/823892 , H01L27/088 , H01L27/0928 , H01L29/1083
摘要： A high side semiconductor structure is provided. The high side semiconductor structure includes a substrate, a first deep well, a second deep well, a first active element, a second active element and a doped well. The first deep well and the second deep well are formed in the substrate, wherein the first deep well and the second deep well have identical type of ion doping. The first active element and the second active element are respectively formed in the first deep well and the second deep well. The doped well is formed in the substrate and is disposed between the first deep well and the second deep well. The doped well, the first deep well and the second deep well are interspaced, and the type of ion doping of the first deep well and the second deep well is complementary with that of the doped well.
摘要翻译：提供了高边半导体结构。高侧半导体结构包括衬底，第一深阱，第二深阱，第一有源元件，第二有源元件和掺杂阱。在衬底中形成第一深阱和第二深阱，其中第一深阱和第二深阱具有相同类型的离子掺杂。第一有源元件和第二有源元件分别形成在第一深阱和第二深阱中。掺杂阱形成在衬底中并且设置在第一深阱和第二深阱之间。掺杂阱，第一深阱和第二深阱是间隔的，第一深阱和第二深阱的离子掺杂类型与掺杂阱的离子掺杂类型互补。

66. 发明授权

US08461915B2 Start-up circuit to discharge EMI filter for power saving of power supplies 有权
标题翻译：启动电路放电EMI滤波器，节省电源
公开(公告)号：US08461915B2
公开(公告)日：2013-06-11
申请号：US12539722
申请日：2009-08-12
申请人： Wei-Hsuan Huang , Meng-Jen Tsai , Chien-Yuan Lin , Ming-Chang Tsou , Chuan-Chang Li , Gwo-Hwa Wang
发明人： Wei-Hsuan Huang , Meng-Jen Tsai , Chien-Yuan Lin , Ming-Chang Tsou , Chuan-Chang Li , Gwo-Hwa Wang
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： H02M1/14 , H02M1/126 , H02M1/36 , H02M2001/322
摘要： A start-up circuit to discharge EMI filter is developed for power saving. It includes a detection circuit detecting a power source for generating a sample signal. A sample circuit is coupled to the detection circuit for generating a reset signal in response to the sample signal. The reset signal is utilized for discharging a stored voltage of the EMI filter.
摘要翻译：开发了用于放电EMI滤波器的启动电路，用于省电。它包括检测电路以检测用于产生采样信号的电源。采样电路耦合到检测电路，用于响应于采样信号产生复位信号。复位信号用于放电EMI滤波器的存储电压。

67. 发明申请

US20130063986A1 CONTROL CIRCUIT FOR CONTROLLING THE MAXIMUM OUTPUT CURRENT OF POWER CONVERTER AND METHOD THEREOF 有权
标题翻译：用于控制功率转换器的最大输出电流的控制电路及其方法
公开(公告)号：US20130063986A1
公开(公告)日：2013-03-14
申请号：US13611091
申请日：2012-09-12
申请人： TA-YUNG YANG , LI LIN , YUE-HONG TANG , JUNG-SHENG CHEN
发明人： TA-YUNG YANG , LI LIN , YUE-HONG TANG , JUNG-SHENG CHEN
IPC分类号： H02M3/335
CPC分类号： H02M3/33507 , H02M2001/0003
摘要： A control circuit of the power converter according to the present invention comprises a feedback circuit, an output circuit and an adaptive clamping circuit. The feedback circuit generates a feedback signal in accordance with an output of the power converter. The output circuit generates a switching signal in accordance with the feedback signal for regulating the output of the power converter. The adaptive clamping circuit limits the level of the feedback signal under a first level for a first load condition. The feedback circuit determines a slew rate of the feedback signal for increasing the level of the feedback signal from the first level to a second level. The adaptive clamping circuit is disabled and the level of the feedback signal can be increased to the second level for a second load condition.
摘要翻译：根据本发明的功率转换器的控制电路包括反馈电路，输出电路和自适应钳位电路。反馈电路根据功率转换器的输出产生反馈信号。输出电路根据用于调节功率转换器的输出的反馈信号产生开关信号。自适应钳位电路在第一负载条件下将反馈信号的电平限制在第一电平。反馈电路确定用于将反馈信号的电平从第一电平增加到第二电平的反馈信号的转换速率。自适应钳位电路被禁用，并且反馈信号的电平可以在第二负载条件下增加到第二电平。

68. 发明申请

US20120249220A1 Trim Circuit for Power Supply Controller 有权
标题翻译：电源控制器微调电路
公开(公告)号：US20120249220A1
公开(公告)日：2012-10-04
申请号：US13073862
申请日：2011-03-28
申请人： Rui-Hong Lu , Han-Chung Tai , Hsin-Chih Chiang
发明人： Rui-Hong Lu , Han-Chung Tai , Hsin-Chih Chiang
IPC分类号： H01H37/74
CPC分类号： G11C17/18 , G11C17/16
摘要： A trim circuit for a power supply controller includes: a control circuit; at least a capacitance type programmable circuit connection; and a switching circuit, under control of the control circuit, the switching circuit selectively coupling the capacitance type programmable circuit connection to anyone of an operation voltage and a programming voltage, for determining a programming state of the capacitance type programmable circuit connection.
摘要翻译：电源控制器的微调电路包括：控制电路; 至少电容式可编程电路连接; 以及开关电路，在所述控制电路的控制下，所述开关电路将所述电容式可编程电路连接选择性地耦合到任何操作电压和编程电压，以确定所述电容型可编程电路连接的编程状态。

69. 发明申请

US20120170321A1 FEEDBACK CIRCUIT WITH REMOTE ON/OFF CONTROL FOR POWER SUPPLY 审中-公开
标题翻译：具有远程开/关控制电源的反馈电路
公开(公告)号：US20120170321A1
公开(公告)日：2012-07-05
申请号：US13293248
申请日：2011-11-10
申请人： TA-YUNG YANG , CHIEN-TSUN HSU
发明人： TA-YUNG YANG , CHIEN-TSUN HSU
IPC分类号： H02M3/335
CPC分类号： H02M3/33523 , H02M2001/0003
摘要： A feedback circuit of power supply according to the present invention comprises a switching controller, an optocoupler, an error amplifier and a timer. The switching controller generates a switching signal in accordance with a feedback signal for regulating an output voltage of the power supply. The optocoupler generates the feedback signal. The error amplifier is coupled to the output voltage of the power supply for generating an amplified signal. The amplified signal is connected to an input of the optocoupler. A remote on/off signal is further coupled to the input of the optocoupler. The timer generates a control signal to disable the switching signal in response to the feedback signal. The control signal is generated after a delay time when the feedback signal is lower than a threshold.
摘要翻译：根据本发明的电源的反馈电路包括开关控制器，光耦合器，误差放大器和定时器。开关控制器根据用于调节电源的输出电压的反馈信号产生开关信号。光耦合器产生反馈信号。误差放大器耦合到电源的输出电压以产生放大的信号。放大的信号连接到光耦合器的输入端。远程开/关信号还耦合到光耦合器的输入端。定时器响应于反馈信号产生控制信号以禁用开关信号。控制信号在反馈信号低于阈值的延迟时间之后产生。

70. 发明授权

US08124466B2 Process for manufacturing voltage-controlled transistor 有权
标题翻译：制造压控晶体管的工艺
公开(公告)号：US08124466B2
公开(公告)日：2012-02-28
申请号：US12132605
申请日：2008-06-03
申请人： Chiu-Chih Chiang , Chih-Feng Huang
发明人： Chiu-Chih Chiang , Chih-Feng Huang
IPC分类号： H01L21/336
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0878 , H01L29/0886 , H01L29/42368 , H01L29/861
摘要： The present invention provides a self-driven LDMOS which utilizes a parasitic resistor between a drain terminal and an auxiliary region. The parasitic resistor is formed between two depletion boundaries in a quasi-linked deep N-type well. When the two depletion boundaries pinch off, a gate-voltage potential at a gate terminal is clipped at a drain-voltage potential at said drain terminal. Since the gate-voltage potential is designed to be equal to or higher than a start-threshold voltage, the LDMOS is turned on accordingly. Besides, no additional die space and masking process are needed to manufacture the parasitic resistor. Furthermore, the parasitic resistor of the present invention does not lower the breakdown voltage and the operating speed of the LDMOS. In addition, when the two depletion boundaries pinch off, the gate-voltage potential does not vary in response to an increment of the drain-voltage potential.
摘要翻译：本发明提供一种利用漏极端子和辅助区域之间的寄生电阻器的自驱动LDMOS。寄生电阻形成在准连接深N型阱中的两个耗尽边界之间。当两个耗尽边界夹闭时，栅极端子处的栅极电压电位在所述漏极端子处的漏极电压电位处被钳位。由于栅极电压电位被设计为等于或高于启动阈值电压，所以LDMOS被相应地导通。此外，不需要额外的管芯空间和掩模工艺来制造寄生电阻器。此外，本发明的寄生电阻器不降低LDMOS的击穿电压和操作速度。此外，当两个耗尽边界夹断时，栅极电压电位不随着漏极 - 电压电位的增加而变化。

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