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    • 66. 发明申请
    • Electrical connector having improved shield
    • 具有改进屏蔽的电连接器
    • US20080032553A1
    • 2008-02-07
    • US11888524
    • 2007-08-01
    • Long-Fei Wang
    • Long-Fei Wang
    • H01R13/648
    • H01R13/506H01R13/6582H01R13/6594
    • An electrical connector (100) includes a lower shield (3), an insulative housing (1) assembled to the lower shield, a number of terminals (2) and a pair of upper shields (4). The lower shield has a bottom wall (33) and a pair of first side walls (32). Each first side wall has a pair of upper base portions (361) and a lower base portion (326) and defines a recess (325) between the upper base portions and the lower base portion. Each upper base portion has a projecting portion (363) extending outwardly therefrom through the recess for engaging with a protrusion (46) disposed on a top surface of the upper shield.
    • 电连接器(100)包括下屏蔽(3),组装到下屏蔽的绝缘壳体(1),多个端子(2)和一对上屏蔽件(4)。 下屏蔽件具有底壁(33)和一对第一侧壁(32)。 每个第一侧壁具有一对上基部(361)和下基部(326),并且在上基部和下基部之间限定凹部(325)。 每个上基部具有从其向外延伸穿过凹部的突出部分(363),用于与设置在上屏蔽件的顶表面上的突起(46)接合。
    • 68. 发明授权
    • Method for forming inlaid structures for IC interconnections
    • 用于形成IC互连的镶嵌结构的方法
    • US07279410B1
    • 2007-10-09
    • US10379757
    • 2003-03-05
    • Lynne A. OkadaFei WangJames Kai
    • Lynne A. OkadaFei WangJames Kai
    • H01L21/4763H01L21/44H01L21/311
    • H01L21/76832H01L21/76802H01L21/76829
    • A method for forming an inlaid interconnect structure for ICs. The method includes forming an etch stop layer, opening a portion of the etch stop layer on an IC die, forming a dielectric layer and cap layer over the etch stop layer, forming a photoresist pattern, and etching the cap and dielectric to form an opening that is then filled with a conductive material (e.g., metal). The method may further include forming a barrier layer within the opening of the etch stop layer. According to another aspect of the invention, a first and second etch stop layer are formed over the substrate and the second etch stop layer is patterned to define two regions, wherein a second region having the first and second etch stop layers experiences a faster etch rate than the first region. The dielectric layer and cap layers are then deposited over both regions and two via or trench openings are formed therethrough in the regions, respectively. The first and second etch stop layers protect the underlying substrate from experiencing punchthrough during the via or trench formation. The etch stop layers are then removed in the openings and a conductive material is formed therein.
    • 一种用于形成用于IC的镶嵌互连结构的方法。 该方法包括形成蚀刻停止层,在IC管芯上打开蚀刻停止层的一部分,在蚀刻停止层上形成介电层和覆盖层,形成光致抗蚀剂图案,以及蚀刻帽和电介质以形成开口 然后用导电材料(例如金属)填充。 该方法还可以包括在蚀刻停止层的开口内形成阻挡层。 根据本发明的另一方面,在衬底上形成第一和第二蚀刻停止层,并且将第二蚀刻停止层图案化以限定两个区域,其中具有第一和第二蚀刻停止层的第二区域经历更快的蚀刻速率 比第一个地区。 然后将介电层和盖层沉积在两个区域上,并且分别在区域中形成两个通孔或沟槽开口。 第一和第二蚀刻停止层在通孔或沟槽形成期间保护下面的衬底不经历穿透。 然后在开口中去除蚀刻停止层,并在其中形成导电材料。