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61. 发明申请

US20110070493A1 CURRENT COLLECTORS HAVING TEXTURED COATING 有权
标题翻译：具有纹理涂层的电流收集器
公开(公告)号：US20110070493A1
公开(公告)日：2011-03-24
申请号：US12566147
申请日：2009-09-24
申请人： Kishor Purushottam Gadkaree , Felipe Miguel Joos , James Robert Lim , Kamjula Pattabhirami Reddy , John Earl Tosch
发明人： Kishor Purushottam Gadkaree , Felipe Miguel Joos , James Robert Lim , Kamjula Pattabhirami Reddy , John Earl Tosch
IPC分类号： H01M4/00 , H01M4/02 , B05D5/12 , H01G9/155
CPC分类号： H01M4/667 , H01G11/28 , H01G11/68 , H01G11/70 , H01G11/84 , H01M4/661 , H01M4/663 , Y02E60/13 , Y02T10/7022
摘要： A current collector and an electric double layer capacitor including a current collector. The current collector has a conductive layer with an electrode-facing surface and an opposing second surface, each surface having an area, and a textured coating formed over and in contact with at least a majority of the electrode-facing surface.
摘要翻译：集电器和包括集电器的双电层电容器。集电器具有导电层，其具有面向电极的表面和相对的第二表面，每个表面具有一个面积，并且纹理化涂层形成在至少大部分面向电极的表面上并与之接触。

62. 发明授权

US07781361B2 Method for regeneration of activated carbon catalyst beds 失效
标题翻译：活性炭催化床再生方法
公开(公告)号：US07781361B2
公开(公告)日：2010-08-24
申请号：US11433187
申请日：2006-05-11
申请人： Kishor Purushottam Gadkaree , Youchun Shi
发明人： Kishor Purushottam Gadkaree , Youchun Shi
IPC分类号： B01J38/04
CPC分类号： B01D53/64 , B01D53/8665 , B01D2253/102 , B01D2253/3425 , B01D2255/702 , B01D2257/602 , B01J20/20 , B01J20/28045 , B01J20/3416 , B01J20/3483 , B01J2220/56 , Y10S502/514
摘要： Disclosed are methods and systems for regenerating mercury loaded activated carbon honeycomb catalyst beds. In one embodiment, the regeneration methods and systems disclosed herein can enable a more efficient and economical operation of a honeycomb based mercury removal system by, for example, allowing the reuse of a particular substrate multiple times.
摘要翻译：公开了用于再生含汞活性炭蜂窝催化剂床的方法和系统。在一个实施方案中，本文公开的再生方法和系统可以通过例如允许多次重复使用特定基底来实现基于蜂窝的汞去除系统的更有效和经济的操作。

63. 发明申请

US20100151328A1 Activated Carbon Materials For High Energy Density Ultracapacitors 有权
标题翻译：高能密度超级电容器的活性炭材料
公开(公告)号：US20100151328A1
公开(公告)日：2010-06-17
申请号：US12335044
申请日：2008-12-15
申请人： Kishor Purushottam Gadkaree , Joseph Frank Mach
发明人： Kishor Purushottam Gadkaree , Joseph Frank Mach
IPC分类号： H01M4/58 , B01J21/18
CPC分类号： H01G11/38 , C01B32/30 , C01B32/306 , C01B32/324 , C01B32/382 , H01G11/34 , Y02E60/13
摘要： An activated carbon material derived, for example, by carbonizing and activating a non-lignocellulosic carbon precursor has a structural order ratio less than or equal to 0.08, and a nitrogen content greater than 0.2 wt. %. The activated carbon material can also have a volumetric capacitance greater than or equal to 70 F/cm3, an area-specific resistance less than or equal to 0.1 ohm-cm2 and/or a specific surface area greater than 300 m2/g, and is suitable to form improved carbon-based electrodes for use in high energy density devices.
摘要翻译：衍生自例如通过碳化和活化非木质纤维素碳前体的活性炭材料具有小于或等于0.08的结构顺序比，并且氮含量大于0.2重量％。％。活性炭材料也可以具有大于或等于70F / cm 3的体积电容，小于或等于0.1ohm-cm 2的面积比电阻和/或大于300m 2 / g的比表面积，并且是适合形成用于高能量密度装置的改进的碳基电极。

64. 发明申请

US20100150814A1 Methods For Forming Activated Carbon Material For High Energy Density Ultracapacitors 有权
标题翻译：用于形成高能密度超级电容器的活性炭材料的方法
公开(公告)号：US20100150814A1
公开(公告)日：2010-06-17
申请号：US12335078
申请日：2008-12-15
申请人： Kishor Purushottam Gadkaree , Joseph Frank Mach
发明人： Kishor Purushottam Gadkaree , Joseph Frank Mach
IPC分类号： C01B31/02 , H01M4/88
CPC分类号： H01M4/133 , C01B32/30 , C01B32/348 , H01G11/34 , H01G11/44 , H01M4/00 , H01M4/02 , H01M4/583 , H01M4/86 , H01M4/88 , Y02E60/13
摘要： A method for producing an activated carbon material includes forming an aqueous mixture of a natural, non-lignocellulosic carbon precursor and an inorganic compound, heating the mixture in an inert or reducing atmosphere, cooling the heated mixture to form a first carbon material, and removing the inorganic compound to produce an activated carbon material. The activated carbon material is suitable to form improved carbon-based electrodes for use in high energy density devices.
摘要翻译：一种生产活性炭材料的方法包括形成天然，非木质纤维素碳前体和无机化合物的水性混合物，在惰性或还原气氛中加热混合物，冷却加热的混合物以形成第一碳材料，并除去该无机化合物生产活性炭材料。活性炭材料适用于形成用于高能量密度装置的改进的碳基电极。

65. 发明申请

US20100130352A1 Methods For Processing Shaped Bodies 审中-公开
标题翻译：加工形状体的方法
公开(公告)号：US20100130352A1
公开(公告)日：2010-05-27
申请号：US12367049
申请日：2009-02-06
申请人： Leonard Charles Dabich, II , James Gerard Fagan , Kishor Purushottam Gadkaree , Millicent Odei Owusu , Mallanagouda Dyamanagouda Patil
发明人： Leonard Charles Dabich, II , James Gerard Fagan , Kishor Purushottam Gadkaree , Millicent Odei Owusu , Mallanagouda Dyamanagouda Patil
IPC分类号： B01J20/00 , B01J32/00 , F27D7/00
CPC分类号： B01J20/20 , B01J20/28042 , B01J20/28045 , B01J20/28057 , C04B38/0006
摘要： The present disclosure relates to methods of making shaped bodies comprising providing a substantially uniform temperature and gas flow throughout the shaped body as a function of reaction time. The disclosure further relates to methods of making shaped bodies substantially uniformly oxidized. The methods comprise setting at least one shaped body and performing at least one firing of the at least one shaped body. The present disclosure further relates to shaped bodies made according to the methods disclosed.
摘要翻译：本公开涉及制造成形体的方法，包括作为反应时间的函数提供整个成形体中基本均匀的温度和气流。本公开还涉及制造成形体基本上均匀氧化的方法。所述方法包括设置至少一个成形体并执行至少一个成形体的至少一次击发。本公开还涉及根据所公开的方法制成的成形体。

66. 发明授权

US07456057B2 Germanium on glass and glass-ceramic structures 失效
标题翻译：锗玻璃和玻璃陶瓷结构
公开(公告)号：US07456057B2
公开(公告)日：2008-11-25
申请号：US11415732
申请日：2006-05-01
申请人： Kishor Purushottam Gadkaree , Paul Stephen Danielson , Matthew John Dejneka , Josef Chauncey Lapp , Linda Ruth Pinckney
发明人： Kishor Purushottam Gadkaree , Paul Stephen Danielson , Matthew John Dejneka , Josef Chauncey Lapp , Linda Ruth Pinckney
IPC分类号： H01L21/338
CPC分类号： H01L21/76254 , H01L29/78603 , H01L29/78684
摘要： A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10−7/° C. of the linear coefficient thermal of expansion of the germanium first layer.
摘要翻译：一种绝缘体上半导体结构，其包括直接或通过一个或多个中间层彼此附接的第一和第二层。第一层包括基本上单晶锗半导体材料，而第二层包括玻璃或具有线性系数热膨胀系数（25-300℃）的玻璃 - 陶瓷材料，该热膨胀系数在+/- 20x10 < 锗锗第一层膨胀的线性系数热的SUP> -7℃/℃。

67. 发明申请

US20080261054A1 Methods of fabricating glass-based substrates and apparatus employing same 失效
标题翻译：制造玻璃基底板的方法及其使用方法
公开(公告)号：US20080261054A1
公开(公告)日：2008-10-23
申请号：US11788570
申请日：2007-04-20
申请人： Kishor Purushottam Gadkaree
发明人： Kishor Purushottam Gadkaree
IPC分类号： B32B17/06 , B05D1/04 , H01L21/20
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for a glass or glass ceramic substrate, comprising: a bulk layer; an enhanced positive ion concentration layer; and a reduced positive ion concentration layer, wherein the enhanced positive ion concentration layer contains substantially all modifier positive ions from the reduced positive ion concentration layer as a result of migration, the substrate does not include any further material thereon.
摘要翻译：方法和装置提供一种玻璃或玻璃陶瓷衬底，包括：体层; 增强的正离子浓度层; 和减小的正离子浓度层，其中由于迁移的结果，增强的正离子浓度层基本上包含来自减少的正离子浓度层的基本上所有改性剂的正离子，所述基材在其上不包括任何其它材料。

68. 发明申请

US20080207443A1 Sorbent comprising activated carbon, process for making same and use thereof 审中-公开
标题翻译：包含活性炭的吸附剂，其制备方法和用途
公开(公告)号：US20080207443A1
公开(公告)日：2008-08-28
申请号：US11803368
申请日：2007-05-14
申请人： Kishor Purushottam Gadkaree , Benedict Y. Johnson , Youchun Shi
发明人： Kishor Purushottam Gadkaree , Benedict Y. Johnson , Youchun Shi
IPC分类号： C01B31/08
CPC分类号： B01J20/20 , B01D53/02 , B01D2253/102 , B01D2253/308 , B01D2257/60 , B01D2257/602 , B01J20/0214 , B01J20/0218 , B01J20/0222 , B01J20/0225 , B01J20/0229 , B01J20/0233 , B01J20/0266 , B01J20/0281 , B01J20/0285 , B01J20/041 , B01J20/046 , B01J20/06 , B01J20/28026 , B01J20/28042 , B01J20/28045 , B01J20/28097 , B01J20/3007 , B01J20/3078 , B01J20/3204 , B01J20/3208 , B01J20/3234 , B01J20/3236 , B01J20/3285 , B01J2220/42 , B01J2220/46
摘要： A sorbent body adapted for abating toxic elements from a fluid stream, such as a carbon combustion flue gas stream or a syngas stream produced in coal gasification process, and process for making such sorbent. The sorbent body comprises an activated carbon matrix defining a plurality of pores, sulfur and additive adapated for promoting the abatement of toxic elements from the fluid stream. The sorbent is useful for abatement of, e.g., arsenic, cadmium, mercury and selenium from gas streams.
摘要翻译：一种适用于从流体流中消除有毒元素的吸附剂体，例如在煤气化过程中产生的碳燃烧烟气流或合成气流，以及用于制备这种吸附剂的方法。吸附剂体包含限定多个孔的活性炭基质，硫和添加剂适于促进从流体流中减少有毒元素。吸附剂可用于从气流中减少例如砷，镉，汞和硒。

69. 发明申请

US20080070340A1 Image sensor using thin-film SOI 审中-公开
标题翻译：使用薄膜SOI的图像传感器
公开(公告)号：US20080070340A1
公开(公告)日：2008-03-20
申请号：US11520958
申请日：2006-09-14
申请人： Nicholas Francis Borrelli , Michael Donavon Brady , Ronald Lee Burt , Kishor Purushottam Gadkaree
发明人： Nicholas Francis Borrelli , Michael Donavon Brady , Ronald Lee Burt , Kishor Purushottam Gadkaree
IPC分类号： H01L21/00
CPC分类号： H01L27/14692 , H01L21/76254 , H01L27/14618 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods related to an image sensor of one or more embodiments include subjecting a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of semiconductor film on the donor semiconductor wafer, forming an anodic bond between the exfoliation layer and an insulator substrate by means of electrolysis; separating the exfoliation layer from the donor semiconductor wafer to transfer the exfoliation layer to the insulator substrate; and creating a plurality of image sensor features proximate to the exfoliation layer. Forming the anodic bonding by electrolysis may include the application of heat, pressure and voltage to the insulator structure and the exfoliation layer attached to the donor semiconductor wafer. Image sensor devices include an insulator structure, a semiconductor film, an anodic bond between them, and a plurality of image sensor features. The semiconductor film preferably comprises an exfoliation layer of a substantially single-crystal donor semiconductor wafer.
摘要翻译：与一个或多个实施例的图像传感器相关的系统和方法包括使施主半导体晶片进行离子注入工艺以在施主半导体晶片上形成半导体膜的剥离层，在剥离层和绝缘体基板之间形成阳极结合通过电解; 将剥离层与施主半导体晶片分离以将剥离层转移到绝缘体基板; 以及创建靠近剥离层的多个图像传感器特征。通过电解形成阳极结合可以包括向绝缘体结构施加热，压力和电压，以及附着到施主半导体晶片的剥离层。图像传感器装置包括绝缘体结构，半导体膜，它们之间的阳极结合以及多个图像传感器特征。半导体膜优选包括基本上单晶施主半导体晶片的剥离层。

70. 发明申请

US20070281399A1 Producing SOI structure using high-purity ion shower 失效
标题翻译：使用高纯度离子淋浴制造SOI结构
公开(公告)号：US20070281399A1
公开(公告)日：2007-12-06
申请号：US11444741
申请日：2006-05-31
申请人： Jeffrey Scott Cites , Kishor Purushottam Gadkaree , Richard Orr Maschmeyer
发明人： Jeffrey Scott Cites , Kishor Purushottam Gadkaree , Richard Orr Maschmeyer
IPC分类号： H01L21/84
CPC分类号： H01L21/76254 , H01L21/26506
摘要： Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
摘要翻译：公开了使用纯化离子淋浴制备SOI和SOG结构以将离子注入给体衬底的方法。纯化的离子淋浴提供方便，高效，低成本和有效的离子注入，同时最小化对剥离膜的损害。

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