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61. 发明申请

US20170236691A1 CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT 审中-公开
公开(公告)号：US20170236691A1
公开(公告)日：2017-08-17
申请号：US15581357
申请日：2017-04-28
申请人： Applied Materials, Inc.
发明人： Qiwei Liang , Xinglong Chen , Kien Chuc , Dmitry Lubomirsky , Soonam Park , Jang-Gyoo Yang , Shankar Venkataraman , Toan Tran , Kimberly Hinckley , Saurabh Garg
IPC分类号： H01J37/32 , B05B1/18 , H01L21/67 , B05B1/00 , C23C16/50 , C23C16/455
CPC分类号： H01J37/32449 , B05B1/005 , B05B1/18 , C23C16/452 , C23C16/455 , C23C16/45561 , C23C16/45565 , C23C16/45574 , C23C16/45582 , C23C16/50 , H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J37/32568 , H01J2237/002 , H01L21/67069
摘要： Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

62. 发明授权

US09659753B2 Grooved insulator to reduce leakage current 有权
公开(公告)号：US09659753B2
公开(公告)日：2017-05-23
申请号：US14454493
申请日：2014-08-07
申请人： Applied Materials, Inc.
发明人： Tae Cho , Sang Won Kang , Dongqing Yang , Raymond W. Lu , Peter Hillman , Nicholas Celeste , Tien Fak Tan , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01J37/32
CPC分类号： H01J37/3255 , H01J37/32082
摘要： A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

63. 发明申请

US20170062184A1 PLASMA ETCHING SYSTEMS AND METHODS WITH SECONDARY PLASMA INJECTION 审中-公开
标题翻译：等离子体蚀刻系统和方法与二次等离子体注射
公开(公告)号：US20170062184A1
公开(公告)日：2017-03-02
申请号：US14838086
申请日：2015-08-27
申请人： APPLIED MATERIALS, INC.
发明人： Toan Q. Tran , Soonam Park , Zilu Weng , Dmitry Lubomirsky
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32357 , H01J37/32532 , H01J37/32715
摘要： An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.
摘要翻译：一种等离子体处理装置，包括第一等离子体源，第一平面电极，气体分配装置，等离子体阻挡屏和工件卡盘。第一等离子体源产生通过第一等离子体源穿过第一平面电极中的第一孔的第一等离子体产物。第一等离子体产物继续通过气体分配装置中的第二孔。等离子体阻挡屏幕包括具有第四孔的第三板，面向气体分配装置，使得第一等离子体产物通过多个第四孔。工件卡盘面对等离子体阻挡屏幕的第二侧，在等离子体阻挡屏幕和工件卡盘之间限定一个处理室。第四孔具有足够小的尺寸以阻挡在处理室中产生的等离子体到达气体分配装置。

64. 发明申请

US20160240402A1 SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING IN PLASMA PROCESSING EQUIPMENT 审中-公开
公开(公告)号：US20160240402A1
公开(公告)日：2016-08-18
申请号：US15139243
申请日：2016-04-26
申请人： Applied Materials, Inc.
发明人： Soonam Park , Yufei Zhu , Edwin C. Suarez , Nitin K. Ingle , Dmitry Lubomirsky , Jiayin Huang
IPC分类号： H01L21/67 , H01J37/32 , C23C16/455 , C23C16/50
CPC分类号： H01J37/32972 , C23C16/455 , C23C16/45536 , C23C16/45559 , C23C16/50 , C23C16/505 , C23C16/52 , H01J37/32082 , H01J37/32119 , H01J37/32357 , H01J37/3244 , H01J37/32532 , H01J37/3255 , H01J37/32623 , H01J2237/334 , H01L21/31116 , H01L21/32137 , H01L21/67069 , H01L21/67253 , H01L22/26
摘要： A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

65. 发明申请

US20160118268A1 SELECTIVE ETCH FOR METAL-CONTAINING MATERIALS 审中-公开
公开(公告)号：US20160118268A1
公开(公告)日：2016-04-28
申请号：US14989077
申请日：2016-01-06
申请人： Applied Materials, Inc.
发明人： Nitin K. Ingle , Jessica Sevanne Kachian , Lin Xu , Soonam Park , Xikun Wang , Jeffrey W. Anthis
IPC分类号： H01L21/3213
CPC分类号： H01L21/3065 , C23F1/02 , C23F1/12 , C23F4/00 , H01J37/3244 , H01J2237/334 , H01J2237/3341 , H01L21/02071 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/32136 , H01L21/76814
摘要： Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

66. 发明授权

US09299582B2 Selective etch for metal-containing materials 有权
标题翻译：含金属材料的选择性蚀刻
公开(公告)号：US09299582B2
公开(公告)日：2016-03-29
申请号：US14512973
申请日：2014-10-13
申请人： Applied Materials, Inc.
发明人： Nitin K. Ingle , Jessica Sevanne Kachian , Lin Xu , Soonam Park , Xikun Wang , Jeffrey W. Anthis
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/02 , C23F1/02 , C23F1/12 , H01J37/32 , C23F4/00 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/3065 , C23F1/02 , C23F1/12 , C23F4/00 , H01J37/3244 , H01J2237/334 , H01J2237/3341 , H01L21/02071 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/32136 , H01L21/76814
摘要： Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.
摘要翻译：描述了从衬底表面选择性地蚀刻含金属材料的方法。相对于含硅膜，例如硅，多晶硅，氧化硅，硅锗和/或氮化硅，蚀刻选择性去除含金属的材料。这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。使用远程等离子体来激发含卤素的前体，并且在实施方案中可以使用局部等离子体。在实施方案中，在将所得表面暴露于远离等离子体激发的卤素流出物之前，可以使用水分或其它含OH前体对基材上的含金属材料进行预处理。

67. 发明申请

US20160042924A1 PLASMA GENERATION CHAMBER WITH SMOOTH PLASMA RESISTANT COATING 有权
标题翻译：具有平滑等离子体涂料的等离子体生成室
公开(公告)号：US20160042924A1
公开(公告)日：2016-02-11
申请号：US14820440
申请日：2015-08-06
申请人： Applied Materials, Inc.
发明人： Sung Je Kim , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01J37/32 , C23C14/08
CPC分类号： H01J37/32559 , C23C14/081 , C23C14/083 , C23C14/28 , H01J37/32357 , H01J37/32422 , H01J37/32449
摘要： A faceplate or a selectivity modulation device (SMD) for a plasma generation chamber has a plasma resistant ceramic coating on a surface of the faceplate or SMD, wherein the plasma resistant ceramic coating comprises a thickness of less than approximately 30 microns, a porosity of less than 1% and a thickness non-uniformity of less than 4%.
摘要翻译：用于等离子体发生室的面板或选择性调制装置（SMD）在面板或SMD的表面上具有耐等离子体陶瓷涂层，其中耐等离子体陶瓷涂层包括小于约30微米的厚度，孔隙率较小超过1％，厚度不均匀度小于4％。

68. 发明申请

US20150241362A1 CERAMIC RING TEST DEVICE 有权
标题翻译：陶瓷环测试设备
公开(公告)号：US20150241362A1
公开(公告)日：2015-08-27
申请号：US14628733
申请日：2015-02-23
申请人： Applied Materials, Inc.
发明人： Satoru Kobayashi , Yufei Zhu , Saurabh Garg , Soonam Park , Dmitry Lubomirsky
IPC分类号： G01N22/00
CPC分类号： G01N22/00
摘要： A test device for testing an electrical property of a chamber component, such as a ceramic ring, includes an outer conductor and an inner conductor disposed within and electrically isolated from the outer conductor. The outer conductor has a base, a top, and an interior sidewall disposed between the base and the top. The inner conductor has a top portion having a first diameter and a bottom portion having a second diameter, in which the second diameter is greater than the first diameter. A sample area is defined between the base of the outer conductor and the bottom portion of the inner conductor, and is configured to receive a chamber component. The electrical property of the chamber component and wherein an electrical property of the chamber component is measurable based on application of a signal to at least one of the outer conductor or the inner conductor.
摘要翻译：用于测试诸如陶瓷环的腔室部件的电性能的测试装置包括外部导体和布置在外部导体中并与外部导体电隔离的内部导体。外部导体具有设置在基部和顶部之间的基部，顶部和内部侧壁。内部导体具有具有第一直径的顶部部分和具有第二直径的底部部分，其中第二直径大于第一直径部分。样品区域被限定在外部导体的底部和内部导体的底部之间，并被构造成容纳腔室部件。基于将信号施加到外部导体或内部导体中的至少一个可以测量室部件的电性能并且其中室部件的电特性是可测量的。

69. 发明授权

US11562890B2 Corrosion resistant ground shield of processing chamber 有权
公开(公告)号：US11562890B2
公开(公告)日：2023-01-24
申请号：US16212580
申请日：2018-12-06
申请人： Applied Materials, Inc.
发明人： Dmitry Lubomirsky , Xiao Ming He , Jennifer Y. Sun , Xiaowei Wu , Laksheswar Kalita , Soonam Park
IPC分类号： H01J37/32 , C23C16/458 , C23C16/46
摘要： A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.

70. 发明授权

US10920319B2 Ceramic showerheads with conductive electrodes 有权
公开(公告)号：US10920319B2
公开(公告)日：2021-02-16
申请号：US16245698
申请日：2019-01-11
申请人： Applied Materials, Inc.
发明人： Laksheswar Kalita , Soonam Park , Dmitry Lubomirsky , Tien Fak Tan , LokKee Loh , Saravjeet Singh , Tae Won Kim
IPC分类号： C23C16/455 , C23C16/34 , H01L21/3213 , H01J37/32 , H01L21/285 , C23C16/458
摘要： Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

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