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61. 发明授权

US11545973B2 Fast active clamp for power converters 有权
公开(公告)号：US11545973B2
公开(公告)日：2023-01-03
申请号：US17647220
申请日：2022-01-06
申请人： Apple Inc.
发明人： Ashish K. Sahoo , Brandon Pierquet
IPC分类号： H03K17/687 , H02M1/08 , H03K19/20
摘要： A switching system can include a main switching device configured to switch a voltage, a gate driver having an output coupled to a drive terminal of the main switching device and configured to deliver a drive signal to the main switching device, and a clamp circuit. The clamp circuit can be coupled to the drive terminal of the main switching device. The clamp circuit can include a logic gate configured to drive a clamp switching device coupled to and configured to clamp a voltage at the drive terminal of the main switching device. A drive signal of the clamp switching device can be substantially complementary to the main switching device drive signal. The logic gate can provide at least a portion of a delay between switching transitions of the main switching device and switching transitions of the clamp switching device.

62. 发明授权

US11544528B2 Homeostatic circuit for neural networks 有权
公开(公告)号：US11544528B2
公开(公告)日：2023-01-03
申请号：US16244125
申请日：2019-01-10
申请人： Rongxue Wang
发明人： Rongxue Wang
IPC分类号： G06N3/04 , H03K17/687
摘要： A homeostatic circuit for neural networks includes a feedback circuit, a first electronic switch, a synapse circuit, a second electronic switch, a third electronic switch and a first capacitor. The feedback circuit is configured to receive the total synaptic driving current and output a feedback voltage which varies with the total synaptic driving current. The first electronic switch is connected with the synapse circuit and the second electronic switch and configured to receive the feedback voltage and output a current control signal according to the feedback voltage. The second electronic switch is connected with the synapse circuit and the third electronic switch and configured to output a first voltage signal according to the current control signal. The third electronic switch is configured to adjust the total synaptic driving current in a direction opposite to variation tendency of the total synaptic driving current according to the first voltage signal.

63. 发明申请

US20220416787A1 SEMICONDUCTOR RELAY DEVICE 有权
公开(公告)号：US20220416787A1
公开(公告)日：2022-12-29
申请号：US17902737
申请日：2022-09-02
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Naoya TAKAI , Yukihiro TAKIFUJI , Keita SAITO , Kazuki TANAKA
IPC分类号： H03K17/687 , H03K17/081 , H03K17/73
摘要： A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.

64. 发明申请

US20220416786A1 POWER SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220416786A1
公开(公告)日：2022-12-29
申请号：US17780169
申请日：2020-02-04
申请人： Mitsubishi Electric Corporation
发明人： Yukimasa HIGASHI , Koji YAMAMOTO
IPC分类号： H03K17/687 , H02H7/20 , H01T15/00
摘要： The object of the present disclosure is to provide a power semiconductor device capable of miniaturization. According to the present disclosure power semiconductor device includes a semiconductor switching element configured to control a current flowing through a primary coil composing an ignition coil, and a control circuit configured to control drive of the semiconductor switching element, in which the control circuit includes a first constant current source, a first transistor with an output terminal thereof connected to a control terminal of the semiconductor switching element, a resistor with one end thereof connected to a control terminal of the first transistor and an other end thereof connected to the constant current source, a capacitor with one end thereof connected to the control terminal of the first transistor and an other end thereof grounded, and a second transistor with an input terminal thereof connected to the resistor and an output terminal grounded.

65. 发明申请

US20220416784A1 GALLIUM NITRIDE BI-DIRECTIONAL HIGH ELECTRON MOBILITY TRANSISTOR SUBSTRATE VOLTAGE MANAGEMENT CIRCUIT 有权
公开(公告)号：US20220416784A1
公开(公告)日：2022-12-29
申请号：US17846882
申请日：2022-06-22
申请人： Enphase Energy, Inc.
发明人： MICHAEL J. HARRISON , Christiaan Johannes van Antwerpen , Patrick Lyle Chapman
IPC分类号： H03K17/687 , H01L29/20 , H01L29/778
摘要： Apparatus for performing substrate voltage management is provided herein and comprises an active substrate voltage management circuit configured to be coupled to a substrate of a bidirectional gallium nitride high electron mobility transistor comprising a first source and a second source. The active substrate voltage management circuit comprises a first circuit that is connected to the first source and a second circuit that is connected to a second source such that when the bidirectional gallium nitride high electron mobility transistor is operational one of the first circuit or the second circuit connects one of the first source to the substrate or the second source to the substrate, respectively, to control a bias voltage applied to the substrate.

66. 发明申请

US20220416766A1 DIFFERENTIAL TECHNIQUES FOR MEASURING VOLTAGE OVER A POWER SWITCH 有权
公开(公告)号：US20220416766A1
公开(公告)日：2022-12-29
申请号：US17356114
申请日：2021-06-23
申请人： Infineon Technologies AG
发明人： Michael Krug , Matthias Weinmann , Marco Bachhuber
IPC分类号： H03K3/011 , H03K17/687
摘要： A driver circuit is configured to deliver drive signals from an output pin to a power switch to control ON/OFF switching of the power switch. A first detection pin of the driver circuit is configured to receive a first signal associated with the power switch, wherein the first signal indicates a voltage drop over the power switch and a voltage drop over one or more other circuit elements. A second detection pin is configured to receive a second signal, wherein the second signal indicates a voltage drop over one or more matched circuit elements, wherein the one or more matched circuit elements associated with the second signal are substantially identical to the one or more other circuit elements associated with the first signal. The driver circuit is configured to determine the voltage drop over the power switch based on a difference between the first signal and the second signal.

67. 发明授权

US11539362B1 Radio frequency switch for providing constant isolation over multiple frequency bands 有权
公开(公告)号：US11539362B1
公开(公告)日：2022-12-27
申请号：US17565395
申请日：2021-12-29
申请人： RichWave Technology Corp.
发明人： Chih-Sheng Chen , Pei-Chuan Hsieh , Tsung-Han Lee
IPC分类号： H03K17/687 , H03K17/16
摘要： A radio frequency (RF) switch includes a first terminal, a second terminal, a series switch circuit, a shunt switch circuit, an inductor and a reference voltage terminal. An RF signal at the first terminal. The series switch circuit is coupled to the first terminal, the second terminal, and the shunt switch circuit. The shunt switch circuit includes a sub-switch circuit, a transistor coupled to the sub-switch circuit, and a compensation capacitor parallel-coupled to the transistor. The inductor is coupled to the shunt switch circuit and the reference voltage terminal. When the RF signal is operated in a first frequency band, the first transistor is turned on for the shunt switch circuit and the inductor to provide a first impedance. When the RF signal is operated in a second frequency band, the first transistor is turned off for the shunt switch circuit and the inductor to provide a second impedance.

68. 发明授权

US11539360B2 RF switch having independently generated gate and body voltages 有权
公开(公告)号：US11539360B2
公开(公告)日：2022-12-27
申请号：US16936021
申请日：2020-07-22
申请人： QUALCOMM Incorporated
发明人： Max Samuel Aubain , Clint Kemerling
IPC分类号： H03K17/16 , H03K17/693 , H03K17/10 , H03K17/30 , H03K3/01 , H03K17/687
摘要： In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

69. 发明申请

US20220407513A1 SAMPLING SWITCH CIRCUITS 有权
公开(公告)号：US20220407513A1
公开(公告)日：2022-12-22
申请号：US17834653
申请日：2022-06-07
申请人： SOCIONEXT INC
发明人： Vlad CRETU , Masahiro KUDO
IPC分类号： H03K17/687
摘要： A sampling switch circuit, including an input node, which receives an input voltage signal to be sampled, a sampling transistor having gate, source and drain terminals, the source terminal connected to the input node, a capacitor, a current source configured to cause a defined current to flow therethrough and switching circuitry configured to alternate between a precharge configuration and an output configuration depending upon a clock signal. In the precharge configuration, the switching circuitry connects the capacitor into a current path between said current source and a first voltage reference node to form a potential difference across the capacitor which is dependent on the defined current. In the output configuration, the switching circuitry connects the capacitor between a second voltage reference node and the gate terminal of the sampling transistor so that a voltage level applied at the gate terminal of the sampling transistor is dependent on the defined current.

70. 发明申请

US20220400747A1 ULTRASONIC ATOMIZING SHEET FULL-WAVE DRIVE CIRCUIT AND ULTRASONIC ELECTRONIC CIGARETTE 有权
公开(公告)号：US20220400747A1
公开(公告)日：2022-12-22
申请号：US17777016
申请日：2020-11-26
申请人： CHINA TOBACCO HUNAN INDUSTRIAL CO., LTD.
发明人： Jianfu Liu , Kejun Zhong , Xiaoyi Guo , Xinqiang Yin , Jianhua Yi , Yuebin Deng
IPC分类号： A24F40/05 , H03K17/687
摘要： Disclosed are a full-wave drive circuit for an ultrasonic atomizing sheet and an ultrasonic electronic cigarette. In an embodiment, the ultrasonic atomizing sheet full-wave drive circuit comprises a power supply module, a microprocessor, a high-frequency square wave generation circuit, an NMOS transistor and a resonance circuit configured to convert, on the basis of the NMOS transistor, a voltage signal outputted by the high-frequency square wave generation circuit into a full-wave oscillation signal, so as to drive the ultrasonic atomizing sheet to perform full-wave oscillation. A disclosed embodiment has low requirements for a boost module, low loss of the boost module, high power conversion efficiency, small volume, low loss of NMOS transistor and low cost, is easy for debugging, and has high reliability and good atomization effect.

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