专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20230140202A1 STARTUP PROTECTION FOR STANDBY AMPLIFIERS 有权
公开(公告)号：US20230140202A1
公开(公告)日：2023-05-04
申请号：US17514785
申请日：2021-10-29
申请人： Micron Technology, Inc.
发明人： Mishal Kumar , Wei Lu Chu
IPC分类号： H03K17/10 , H03K17/687 , H03K17/732 , H03K17/30 , G11C5/14
摘要： Embodiments herein relate to protection of a standby amplifier of a memory device. Specifically, an input voltage of the standby amplifier may be reduced to decrease an occurrence of damage to the standby amplifier or components thereof. In some embodiments, the input voltage may be reduced using a voltage divider that provides the reduced input voltage to the standby amplifier during a power up operation. Upon completion of the power up operation, the input voltage of the standby amplifier may return to an operating voltage. The reduced input voltage may reduce the occurrence of damage to the standby amplifier by maintaining a gate to drain voltage of one or more transistors of the standby amplifier below a maximum.

2. 发明申请

US20230136979A1 ELECTROSTATIC PROTECTION CIRCUIT FOR CHIP 有权
公开(公告)号：US20230136979A1
公开(公告)日：2023-05-04
申请号：US17810599
申请日：2022-07-02
申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.
发明人： Ling ZHU , Kai TIAN
IPC分类号： H01L27/02 , H02H9/04 , H03K17/30
摘要： An electrostatic protection circuit for a chip including a power supply pad and a ground pad, the electrostatic protection circuit includes: a monitoring assembly, configured to generate a trigger signal when an electrostatic pulse is present on the power supply pad; a discharge transistor connected between the power pad and the ground pad and configured to be turned on under control of the trigger signal to discharge electrostatic charges to the ground pad; and a control circuit connected to the monitoring assembly and configured to control a duration of the trigger signal generated by the monitoring assembly.

3. 发明申请

US20230130933A1 SWITCHING CIRCUIT, DC/DC CONVERTER, AND CONTROL CIRCUIT OF DC/DC CONVERTER 有权
公开(公告)号：US20230130933A1
公开(公告)日：2023-04-27
申请号：US18048095
申请日：2022-10-20
申请人： ROHM Co., LTD.
发明人： Shun FUKUSHIMA
IPC分类号： H02M3/156 , H02M3/18 , H03K17/30
摘要： Provided is a switching circuit including an input terminal, a switching terminal, a ground terminal, a bootstrap terminal, a high side transistor connected to the input terminal and the switching terminal, a low side transistor connected to the switching terminal and the ground terminal, a bootstrap capacitor connected to the switching terminal and the bootstrap terminal, a bootstrap switch including a PMOS transistor, and a driver circuit that turns on the bootstrap switch in a period in which the low side transistor is on and that turns off the bootstrap switch in a period in which the low side transistor is off, in which the driver circuit includes a level shifter and a buffer, and the level shifter includes an output line, a first resistance, a first transistor, a second resistance, a third resistance, a second transistor, a third transistor, a first capacitor, and a fourth transistor.

4. 发明授权

US11626808B1 Fault tolerant power converter 有权
公开(公告)号：US11626808B1
公开(公告)日：2023-04-11
申请号：US17327443
申请日：2021-05-21
申请人： Vicor Corporation
发明人： Patrizio Vinciarelli
IPC分类号： H02M7/219 , H02M3/335 , H03K17/06 , H03K17/30 , H03K17/687 , H02M1/38 , H02M7/00 , G06F1/26 , G06F1/3287 , H02M1/32 , H02M1/00
摘要： A power converter provides a low-voltage output using a full-bridge fault-tolerant rectification circuit. The output circuit uses controlled switches as rectifiers. A fault detection circuit monitors circuit conditions. Upon detection of a fault, the switches are disabled decoupling the power converter from the system.
A common-source dual MOSFET device includes a plurality of elements arranged in alternating patterns on a semiconductor die. A common-source dual synchronous rectifier includes control circuitry powered from the drain to source voltage of the complementary switch.
A DC-to-DC transformer converts power from an input source to a load using a fixed voltage transformation ratio. A clamp phase may be used to reduce power losses in the converter at light loads, control the effective output resistance of the converter, effectively regulate the voltage transformation ratio, provide narrow band output regulation, and control the rate of change of output voltage for example during start up. One or more of the transformer windings may be clamped. The converter may use the sine amplitude converter topology. The converter may use common-source dual MOSFET devices and fault detection.
The density of point of load power conversion may be increased and the associated power dissipation reduced by removing the input driver circuitry from the point of load where it is not necessary. An output circuit may be located at the point of load providing fault tolerant rectification of the AC power from the secondary winding of a power transformer which may be located nearby the output circuit. The resonant voltage and current waveforms on the primary side of the transformer are readily communicated via an AC bus between the driver circuit and the primary winding of the power transformer. The driver circuit may drive a plurality of transformer-output circuit pairs. The transformer and output circuit may be combined in a single module at the point of load. Alternatively, the output circuit may be integrated into point of load circuitry such as a processor core. The transformer may be deployed near the output circuit.

5. 发明申请

US20230094422A1 SWITCH CURRENT SOURCE CIRCUIT AND METHOD FOR QUICKLY ESTABLISHING SWITCH CURRENT SOURCE 有权
公开(公告)号：US20230094422A1
公开(公告)日：2023-03-30
申请号：US16978773
申请日：2020-05-12
申请人： MONTAGE TECHNOLOGY (KUNSHAN) CO., LTD.
发明人： Jian YIN , Lixin JIANG , Hui YU
IPC分类号： H02M3/156 , H03K17/30 , G05F3/02
摘要： The present disclosure provides a switching current source circuit and a method for quickly establishing a switching current source. The switching current source circuit includes a first and a second switching current source branches connected in parallel with one end of a load. When the switching enable signal is switched, due to the charge coupling of the first and second switching current source branches, the bias voltage respectively generates bounce in the same direction as and a direction opposite to the transition direction of the switching enable signal. The two bounces cancel each other to make the current source bias voltage recover quickly when a toggle event happens. The present disclosure accelerates the establishment of current through the coupling of charges, and reduces the decoupling capacitance at the same time, thereby reducing the circuit area and saving the costs.

6. 发明授权

US11575372B2 High voltage gate driver current source 有权
公开(公告)号：US11575372B2
公开(公告)日：2023-02-07
申请号：US16877128
申请日：2020-05-18
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Sujan Kundapur Manohar , Michael James Mills , Justin Patrick Vogt
IPC分类号： H03K17/14 , H03K17/06 , G05F3/24 , H03K17/687 , H03K17/30 , G06F13/42
摘要： A power supply system for USB Power Delivery includes a current source drive circuit to control a power FET to regulate the supply of power along a power path. The current source drive circuit includes a cascode current source and a cascode protection circuit formed by a source follower and a feedback voltage divider. The source follower can be a transistor with its gate connected to a cascode node between upper- and lower-stage transistors of the cascode current source. The divider node of the voltage divider is connected to the gate of the lower-stage transistor. The current source drive circuit can operate within the gate-source voltage specifications of 30-volt DEPMOS devices, and can provide high output impedance to the gate of power FET and a current limit circuit during current limiting operation, without requiring an extra high-voltage mask during fabrication.

7. 发明授权

US11509305B2 Switchable diode devices having transistors in series 有权
公开(公告)号：US11509305B2
公开(公告)日：2022-11-22
申请号：US17411838
申请日：2021-08-25
申请人： STMicroelectronics (Rousset) SAS
发明人： Nicolas Froidevaux , Laurent Lopez
IPC分类号： H03K17/687 , H03K17/30
摘要： An electronic chip includes a chip core including an input terminal, an output terminal, an external pad, and an input-output circuit coupled to the chip core and the external pad. The input-output circuit includes an enable terminal coupled to the chip core, a connection terminal coupled to the external pad, a switchable diode device coupled between a supply voltage and a reference voltage, and a levelling circuit. The switchable diode device is coupled to the connection terminal and the enable terminal and is configured to operate as a diode in response to a control signal in a first state applied to the enable terminal and to operate as an open circuit in response to the control signal in a second state applied to the enable terminal. The levelling circuit is coupled to the connection terminal, the input terminal of the chip core, and the output terminal of the chip core.

8. 发明授权

US11502679B2 Robust power-on-reset circuit with body effect technique 有权
公开(公告)号：US11502679B2
公开(公告)日：2022-11-15
申请号：US17214483
申请日：2021-03-26
申请人： MACRONIX INTERNATIONAL CO., LTD.
发明人： Shang-Chi Yang , Jhen-Sheng Chih , Jian-Syu Lin
IPC分类号： H03K17/00 , H03K17/22 , H03K17/30 , H03K17/16
摘要： An integrated circuit with a power-on-reset circuit includes an inverter circuit connected between the first and second supply node, a cascode-connected series of transistors MCn, for n going from 1 to N, connected between the first supply node and the input node of the inverter, and a resistive element connected between the input node of the inverter and the second supply node. The transistors in the cascode-connected series of transistors MCn pull up the input node voltage above a trip point voltage when the voltage between the input node and the first supply node is more than a threshold of the cascode-connected series. A circuit connected between the first and second supply nodes is responsive to a POR pulse output by the inverter.

9. 发明申请

US20220360262A1 Field-Effect Transistor (FET) Based Synchronous Rectifier For Emulating Diode 有权
公开(公告)号：US20220360262A1
公开(公告)日：2022-11-10
申请号：US17597322
申请日：2020-09-29
申请人： Steifpower Technology Company Limited
发明人： Domenico LO VERDE , Cesare RONSISVALLE , Chi Ping TANG
IPC分类号： H03K17/30 , H01L27/06 , H02M7/217
摘要： A field-effect transistor (FET) based synchronous rectifier for emulating a diode, comprising: a first terminal (20) and a second terminal (30); a first FET (M1) and a second ELT (M2), wherein the second FET (M2) is adapted to control operation of the first FET (M1) to thereby allow unidirectional current flow when the two terminals (20, 30) are connected with an external circuit; and wherein the FET based synchronous rectifier comprises a fully integrated single-chip device (10) adapted to emulate a diode.

10. 发明申请

US20220263505A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220263505A1
公开(公告)日：2022-08-18
申请号：US17670506
申请日：2022-02-14
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Ryo KANDA
IPC分类号： H03K17/687 , H03K17/30
摘要： A semiconductor device includes: a semiconductor base body including: a p-type substrate; and an n-type first semiconductor layer; a first electrode; a second electrode; an isolation film; an insulation film; and a third electrode disposed over the insulation film. The first electrode is electrically connected to a first circuit C1 that is connected to a first power source Vin. The second electrode is electrically connected to a second circuit C2 that is connected to a second power source Vcc. The semiconductor base body further includes a p-type back gate region that is formed in at least a region of the semiconductor base body that faces the third electrode by way of the insulation film with a depth that allows the back gate region to reach the substrate. A dopant concentration of the back gate region falls within a range of 1×1010 cm−3 to 1×1015 cm−3.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式