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61. 发明授权

US11387160B2 Semiconductor apparatus, power module and power supply 有权
公开(公告)号：US11387160B2
公开(公告)日：2022-07-12
申请号：US16868176
申请日：2020-05-06
申请人： ROHM CO., LTD.
发明人： Keisuke Wakamoto
IPC分类号： H01L23/367 , H01L23/427 , H01L21/48 , H01L23/373 , H01L23/00 , H01L25/07 , H01L23/467 , H02P27/06
摘要： The semiconductor apparatus includes: a thermal source TS including a semiconductor device generating heat in an operating state; a thermal diffusion unit thermally connected to the thermal source TS, the thermal diffusion unit including space in a direction opposite to the thermal source; a plurality of air-cooling fin units disposed in the space of the thermal diffusion unit, one end of the plurality of fin unit is connected to the thermal diffusion unit; and a base unit connected to the thermal diffusion unit, wherein the plurality of air-cooling fin units is connected to the base unit through a plurality of thermal contact units CP1, CP2, CP3, . . . , CPn. Provide is an air-cooling type semiconductor apparatus, power module, and power supply, each having high heat dissipation performance and realizing light weight.

62. 发明申请

US20220199585A1 DIODE DISCRETE DEVICE, CIRCUIT WITH BYPASS FUNCTION, AND CONVERTER 有权
公开(公告)号：US20220199585A1
公开(公告)日：2022-06-23
申请号：US17693014
申请日：2022-03-11
申请人： Huawei Digital Power Technologies Co., Ltd.
发明人： Dong CHEN , Lei SHI , Zhaohui WANG
IPC分类号： H01L25/07 , H02M3/155
摘要： This application provides a diode discrete device, a circuit with a bypass function, and a converter. The diode discrete device is used in a circuit with a bypass function, and the diode discrete device includes a discrete device package, a first diode, and a second diode. The first diode is a main circuit diode, the second diode is a bypass diode, first performance of the first diode is better than first performance of the second diode, and the first performance includes a reverse recovery charge and reverse recovery time. The first diode and the second diode are packaged into the discrete device package, and an anode of the first diode is connected to an anode of the second diode, or a cathode of the first diode is connected to a cathode of the second diode. The diode discrete device can improve integration and power density of the circuit.

63. 发明授权

US11348915B2 Semiconductor device having stacked field effect transistors 有权
公开(公告)号：US11348915B2
公开(公告)日：2022-05-31
申请号：US16435765
申请日：2019-06-10
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Masakazu Kojima , Yun Tae Nam
IPC分类号： H01L27/088 , H01L25/07 , H01L23/522 , H01L29/78 , H01L29/417 , H01L29/423 , H01L29/45
摘要： A semiconductor device includes a substrate, a first FET part and a second FET part disposed on a surface of the substrate. The first FET part includes a first gate electrode region and a first source electrode region spaced apart from each other. The second FET part, connected to the first FET part in a stacked structure, includes a second gate electrode region and a second drain electrode region spaced apart from each other. Each of the first FET part and the second FET part includes a first common electrode and a second common electrode disposed on the surface of the substrate and spaced apart from each other. Each of the first common electrode and the second common electrode is configured to be a single conductor wiring integrally formed by a first drain electrode of the first FET part and a second source electrode of the second FET part.

64. 发明授权

US11348852B2 Semiconductor device 有权
公开(公告)号：US11348852B2
公开(公告)日：2022-05-31
申请号：US17107541
申请日：2020-11-30
申请人： FUJI ELECTRIC CO., LTD.
发明人： Naoki Takizawa
IPC分类号： H01L23/12 , H01L23/36 , H01L25/07 , H01L25/18 , H01L23/00
摘要： A semiconductor device includes an insulating circuit substrate including an insulating plate, a first metal layer formed on a top surface of the insulating plate, and a second metal layer formed on a bottom surface of the insulating plate, a heatsink on whose top surface the insulating circuit substrate is disposed; semiconductor elements disposed on the top surface of the first metal layer through a bonding material, and a case that encloses a perimeter of the insulating circuit substrate and the semiconductor elements. The first metal layer includes circuit patterns electrically connected to the semiconductor elements and an annular pattern formed to enclose the perimeter of the circuit patterns with a gap provided with respect to the circuit patterns. The second metal layer is disposed at a spot that surfaces the annular pattern. The housing is affixed to the annular pattern through an adhesive.

65. 发明申请

US20220165719A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220165719A1
公开(公告)日：2022-05-26
申请号：US17441950
申请日：2020-04-21
申请人： ROHM CO., LTD.
发明人： Takumi KANDA
IPC分类号： H01L25/16 , H01L25/07 , H01L25/18 , H01L23/00 , H01L23/31 , H01L23/373
摘要： A semiconductor device includes a support member, a first switching element, a second switching element, a first passive element, a second passive element, and an electrical conductor. The support member includes a plurality of wiring parts, and the plurality of wiring parts include a first wiring section and a second wiring section spaced apart from each other in a first direction perpendicular to the thickness direction of the support member. The first switching element is electrically connected to the first wiring section. The second switching element is electrically connected to the first switching element and the second wiring section. The first passive element has a first electrode and a second electrode, and the first electrode is bonded to the first wiring section. The second passive element has a third electrode and a fourth electrode, and the fourth electrode is bonded to the second wiring section. The electrical conductor connects the second electrode and the third electrode to each other. At least one of the first passive element and the second passive element is a capacitor.

66. 发明授权

US11342298B2 Die stack arrangement comprising a die-attach-film tape and method for producing same 有权
公开(公告)号：US11342298B2
公开(公告)日：2022-05-24
申请号：US17023986
申请日：2020-09-17
申请人： Infineon Technologies AG
发明人： Matthias Steiert , Karolina Gierl
IPC分类号： H01L23/00 , B81B7/02 , B81C1/00 , H01L25/065 , H01L21/56 , H01L25/07 , H01L21/67 , H01L23/10 , H01L23/13
摘要： A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

67. 发明申请

US20220157693A1 SYSTEMS INCLUDING A VAPOR CHAMBER AS THE HEAT SPREADING SUBSTRATE OF A POWER DEVICE EMBEDDED IN A PCB AND METHODS OF FORMING THE SAME 有权
公开(公告)号：US20220157693A1
公开(公告)日：2022-05-19
申请号：US17166241
申请日：2021-02-03
申请人： Toyota Motor Engineering & Manufacturing North America, Inc. , Toyota Jidosha Kabushiki Kaisha
发明人： Feng Zhou , Shohei Nagai , Hiroshi Ukegawa
IPC分类号： H01L23/427 , H05K1/02 , H01L25/07 , H05K1/18 , H01L25/00 , H05K3/00
摘要： Embedded cooling systems and methods of forming the same are disclosed. A system may include a PCB stack comprising a first major substrate opposite a second major substrate, a pre-preg layer disposed between the first and second major substrates, a power device stack embedded within the PCB stack and comprising a substrate, a power device coupled to the substrate of the power device stack, and a vapor chamber embedded within at least the pre-preg layer of the PCB stack and the power device stack being coupled to the vapor chamber.

68. 发明授权

US11337306B2 Semiconductor device 有权
公开(公告)号：US11337306B2
公开(公告)日：2022-05-17
申请号：US17134972
申请日：2020-12-28
申请人： FUJI ELECTRIC CO., LTD.
发明人： Kenshi Kai , Rikihiro Maruyama
IPC分类号： H05K1/11 , H05K1/00 , H05K1/05 , H01L25/07 , H01L23/498 , H01L23/14 , H05K1/02
摘要： A semiconductor device including an insulated circuit board. The insulated circuit board includes an insulating board having an outer edge and a plurality of corners, and a plurality of circuit patterns formed on a front surface of the insulating board. The plurality of circuit patterns have a plurality of outer-edge corners facing the outer edge of the insulating board, among which outer-edge corners corresponding to the corners of the insulating board are smaller in curvature than outer-edge corners that do not correspond to the corners of the insulating board.

69. 发明申请

US20220148999A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220148999A1
公开(公告)日：2022-05-12
申请号：US17488421
申请日：2021-09-29
申请人： FUJI ELECTRIC CO., LTD.
发明人： Mariko Maruyama
IPC分类号： H01L23/00 , H01L23/495 , H01L23/24 , H01L25/07
摘要： A semiconductor device includes an insulated circuit board including a circuit pattern, a semiconductor chip on the circuit pattern, a wire connected to the semiconductor chip, an external connection terminal including a leg portion extending in a direction perpendicular to a front surface of the circuit pattern and a terminal portion electrically connected to the leg portion, and a case including a frame portion which surrounds an insulated circuit board and a beam portion bonded to an external connection terminal and overlapping at least a part of a wire in a plan view of the semiconductor device, and a sealing member with which the case is filled, which seals a front surface of the insulated circuit board, a semiconductor chip, the wire, and a back surface of the beam portion, and which is exposed in the plan view from a gap between a leg portion and the beam portion.

70. 发明申请

US20220148958A1 ELECTRICALLY POWER ASSEMBLY WITH THICK ELECTRICALLY CONDUCTIVE LAYERS 有权
公开(公告)号：US20220148958A1
公开(公告)日：2022-05-12
申请号：US17431916
申请日：2020-01-20
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Roberto MRAD , Stefan MOLLOV
IPC分类号： H01L23/498 , H01L25/07 , H01L25/18 , H01L23/13 , H01L21/48 , H01L25/00
摘要： An electrical power assembly, comprising: at least one multilayer base structure, at least one power device embedded in the at least one multilayer base structure, an internal electrically conductive layer positioned on each side of the multilayer base structure, the internal electrically conductive layer being connected to a respective electrical contact of the power device through connections arranged in the multilayer base structure; at least one external electrically conductive layers positioned on each side of the base structure, each external electrically conductive layer comprising at least one pre-drilled through hole, at least one internal electrically insulating layer positioned between the internal electrically conductive layer of the base structure and a respective external electrically conductive layer, at least one hole arranged in the internal electrically insulating layer and the external electrically conductive layer, a portion of each hole being formed by the pre-drilled through hole, the at least one hole being filled with electrically conductive material to form external conductive vias to connect the internal electrically conductive layer to the respective external electrically conductive layer.

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