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    • 73. 发明授权
    • Method and system for handover in mobile communication network
    • 移动通信网中切换的方法和系统
    • US07801081B2
    • 2010-09-21
    • US11847843
    • 2007-08-30
    • Yong-Seouk ChoiKyung-Soo Kim
    • Yong-Seouk ChoiKyung-Soo Kim
    • H04Q7/20H04Q7/00H04B7/216
    • H04W36/0083H04W84/005
    • A handover method according to an embodiment of the present invention includes: receiving neighboring base station information at a wireless relay station providing a wireless communication service moving together with a plurality of subscriber stations that move along the same moving path; performing scanning to check a wireless environment state of a neighboring base station using the received neighboring base station information; performing handover of the plurality of subscriber stations to a target base station as a single handover unit, when a handover condition is met during the scanning; and notifying the subscriber station of completion of handover preparation with the target base station.
    • 根据本发明实施例的切换方法包括:在无线中继站处接收邻近基站信息,所述无线中继站提供与沿着相同移动路径移动的多个用户站一起移动的无线通信服务; 执行扫描以使用所接收的相邻基站信息来检查相邻基站的无线环境状态; 当在扫描期间满足切换条件时,执行作为单个切换单元的多个用户站到目标基站的切换; 并向目标基站通知用户台完成切换准备。
    • 75. 发明申请
    • APPARATUS AND METHOD FOR FAIRLY ALLOCATING RESOURCES IN BAND AMC MODE OF WIDEBAND WIRELESS ACCESS SYSTEM
    • 宽带无线接入系统BAND AMC模式下公平分配资源的设备与方法
    • US20100182961A1
    • 2010-07-22
    • US12377265
    • 2007-03-27
    • Eun-Kyung KimKyung-Soo Kim
    • Eun-Kyung KimKyung-Soo Kim
    • H04W72/00
    • H04W72/1284H04L1/0003H04L1/0009H04L1/0026H04L1/0027H04W8/24H04W72/0453H04W72/1231
    • Disclosed are an apparatus and a method for fairly allocating resources in a band adaptive modulation and coding (band AMC) mode of a wideband wireless access system. There is provided a method of fairly allocating resources in a band AMC mode of a wideband wireless access system when two or more mobile stations simultaneously transmit channel quality information (CQI) through an overlapping band. The method includes: when two or more mobile stations transmit the channel quality information (CQI) through an overlapping band, examining whether the mobile stations transmit information indicating that the overlapping band is the highest bands thereof; comparing tag values of the mobile stations transmitting the information indicating that the overlapping band is the highest band thereof and selecting one of the tag values having the highest priority, the tag values being given when the mobile stations transmit the information on the band at the beginning and the tag values stored for every frame being reset; allocating a sub channel corresponding to the highest band to the mobile station having the selected tag value; and changing the tag values of the mobile stations transmitting the information indicating that the overlapping band is the highest band thereof on the basis of the result of the comparison to reset the tag values.
    • 公开了一种用于在宽带无线接入系统的频带自适应调制和编码(频带AMC)模式中公平分配资源的装置和方法。 提供了当两个或多个移动站同时通过重叠频带发送信道质量信息(CQI)时,在宽带无线接入系统的频带AMC模式下公平分配资源的方法。 该方法包括:当两个或多个移动站通过重叠频带发送信道质量信息(CQI)时,检查移动站是否发送表示重叠频带是其最高频带的信息; 比较发送表示重叠频带是其最高频带的信息的移动站的标签值,并选择具有最高优先级的标签值中的一个,当移动站在开始时发送关于频带的信息时给出标签值 并且为每个帧复制存储的标签值; 将具有所选标签值的移动站分配与最高频带对应的子信道; 以及基于比较结果,改变发送表示重叠频带是其最高频带的信息的移动站的标签值,以重置标签值。
    • 80. 发明授权
    • Methods of forming integrated circuit device gate structures
    • 形成集成电路器件门结构的方法
    • US07550347B2
    • 2009-06-23
    • US11510059
    • 2006-08-25
    • Sam-jong ChoiYong-kwon KimKyoo-chul ChoKyung-soo KimJae-ryong JungTae-soo KangSang-Sig Kim
    • Sam-jong ChoiYong-kwon KimKyoo-chul ChoKyung-soo KimJae-ryong JungTae-soo KangSang-Sig Kim
    • H01L21/00
    • H01L21/28282B82Y10/00H01L29/42324H01L29/42332H01L29/792H01L29/7923
    • Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions of a selected element from group 4 of the periodic table and having a thermal diffusivity of less than about 0.5 centimeters per second (cm2/s) are injected into the first dielectric layer to form a charge storing region in the first dielectric layer with a tunnel dielectric layer under the charge storing region. A metal oxide second dielectric layer is formed on the first dielectric layer, the second dielectric layer. The substrate including the first and second dielectric layers is thermally treated to form a plurality of discrete charge storing nano crystals in the charge storing region and a gate electrode layer is formed on the second dielectric layer. Gate structures for integrated circuit devices and memory cells are also provided.
    • 形成用于集成电路存储器件的栅极结构的方法包括在集成电路衬底上形成具有低于7的介电常数的第一介电层。 将元素周期表第4组的选定元素的离子注入到第一电介质层中,以在第一电介质层中形成具有小于约0.5厘米每秒(cm 2 / s)的热扩散率的离子,从而在第一电介质层中形成电荷存储区, 在电荷存储区域下的隧道介电层。 金属氧化物第二电介质层形成在第一电介质层,第二电介质层上。 包括第一和第二电介质层的衬底被热处理以在电荷存储区域中形成多个离散的电荷存储纳米晶体,并且在第二电介质层上形成栅极电极层。 还提供用于集成电路器件和存储单元的栅极结构。