专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20090008625A1 Optoelectronic device 审中-公开
标题翻译：光电器件
公开(公告)号：US20090008625A1
公开(公告)日：2009-01-08
申请号：US11998405
申请日：2007-11-30
申请人： Tzong-Liang Tsai , Ming-Huang Hong
发明人： Tzong-Liang Tsai , Ming-Huang Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/007
摘要： The present invention provides an optoelectronic device, which includes a substrate having a first surface and a second surface, and an atomization layer located therebetween; a multi-layer semiconductor layer is formed on the first surface of the substrate, which further includes a first semiconductor structure that is formed on the substrate, a second semiconductor structure, and an active layer is located between the first semiconductor structure and the second semiconductor structure.
摘要翻译：本发明提供一种光电子器件，其包括具有第一表面和第二表面的基底和位于其间的雾化层; 在基板的第一表面上形成多层半导体层，该多层半导体层还包括形成在基板上的第一半导体结构，第二半导体结构和有源层位于第一半导体结构和第二半导体之间结构体。

72. 发明申请

US20090001394A1 Semiconductor structure combination for epitaxy of semiconductor optoelectronic device 有权
标题翻译：半导体光电子器件外延半导体结构组合
公开(公告)号：US20090001394A1
公开(公告)日：2009-01-01
申请号：US11987640
申请日：2007-12-03
申请人： Chih-Ching Cheng , Tzong-Liang Tsai
发明人： Chih-Ching Cheng , Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02538 , H01L21/02609 , H01L21/0262
摘要： The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an upper surface and a recess formed on the upper surface. The sidewalls of the recess provide at least one first site for the growth of at least one first epitaxial crystal of the semiconductor material toward a first preferred orientation. A bottom of the recess provides a second site for the growth of a second epitaxial crystal of the semiconductor material toward the first preferred orientation. Flat regions adjacent to the recess provide at least one third site for the growth of at least one third epitaxial crystal of the semiconductor material toward the first preferred orientation.
摘要翻译：本发明公开了一种用于半导体光电子器件外延的半导体结构组合及其制造。根据本发明的半导体结构组合包括基板和半导体材料。基板具有形成在上表面上的上表面和凹部。凹槽的侧壁提供至少一个第一位置，用于朝着第一优选取向生长半导体材料的至少一个第一外延晶体。凹部的底部提供第二位置，用于朝向第一优选取向生长半导体材料的第二外延晶体。与凹部相邻的平坦区域提供至少一个第三位置，用于朝向第一优选取向生长半导体材料的至少一个第三外延晶体。

73. 发明申请

US20060163599A1 Light emitting diode and fabricating method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060163599A1
公开(公告)日：2006-07-27
申请号：US11108966
申请日：2005-04-19
申请人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
IPC分类号： H01L29/22
CPC分类号： H01L33/46 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure.
摘要翻译：提供一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。依次形成欧姆接触层和反射层，然后进行蚀刻以露出透明电介质材料。最后，形成粘合导电复合层以将欧姆接触层和反射层固定在发光二极管外延结构上。

74. 发明授权

US06921924B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US06921924B2
公开(公告)日：2005-07-26
申请号：US10463393
申请日：2003-06-18
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
IPC分类号： H01L33/22 , H01L33/24 , H01L33/38 , H01L33/00
CPC分类号： H01L33/24 , H01L33/22
摘要： A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.
摘要翻译：一种半导体发光器件的制造方法。半导体发光器件具有在衬底上依次形成的衬底和半导体层，n型半导体层和p型半导体层。该方法在衬底和半导体层之间，或者在半导体层和n型半导体层之间或在n型半导体层和p型半导体层之间形成具有预定图案的中间层。由于具有预定图案的中间层，p型半导体层具有不均匀的顶层，并且可以减少LED的全内反射。中间层是降低LED串联电阻的导电材料。

75. 发明授权

US06544868B2 Method of manufacturing light emitting diode with low-receptivity p-type impurity layers formed by microwave treatment 有权
标题翻译：通过微波处理形成低电阻P型杂质层的发光二极管的制造方法
公开(公告)号：US06544868B2
公开(公告)日：2003-04-08
申请号：US10131136
申请日：2002-04-25
申请人： Tzong-Liang Tsai , Chung-Ying Chang
发明人： Tzong-Liang Tsai , Chung-Ying Chang
IPC分类号： H01L2120
CPC分类号： H01L33/0095 , H01L21/3245
摘要： The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.
摘要翻译：本发明提供一种在衬底上制造低电阻率p型化合物半导体材料的方法。本发明的方法包括以下步骤：通过HVPE，OMVPE或MBE在衬底上形成p型杂质掺杂化合物半导体层，并在p型杂质掺杂化合物半导体层上施加微波处理一段时间。根据本发明，高电阻率p型杂质掺杂化合物半导体层被转换为低电阻率p型化合物半导体材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式