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71. 发明授权

US08962402B1 Lateral diffusion metal oxide semiconductor (LDMOS) device with tapered drift electrode 有权
标题翻译：具有锥形漂移电极的横向扩散金属氧化物半导体（LDMOS）器件
公开(公告)号：US08962402B1
公开(公告)日：2015-02-24
申请号：US13966312
申请日：2013-08-14
申请人： International Business Machines Corporation
发明人： Santosh Sharma , Yun Shi , Anthony K. Stamper
IPC分类号： H01L21/00 , H01L29/78 , H01L29/06 , H01L29/66
CPC分类号： H01L29/404 , H01L29/0653 , H01L29/66681 , H01L29/7816
摘要： A lateral diffusion metal oxide semiconductor (LDMOS) comprises a semiconductor substrate having an STI structure in a top surface of the substrate, a drift region below the STI structure, and a source region and a drain region on opposite sides of the STI structure. A gate conductor is on the substrate over a gap between the STI structure and the source region, and partially overlaps the drift region. Floating gate pieces are over the STI structure. A conformal dielectric layer is on the top surface and on the gate conductor and floating gate pieces and forms a mesa above the gate conductor and floating gate pieces. A conformal etch-stop layer is embedded within the conformal dielectric layer. A drift electrode is formed on the conformal etch-stop layer over, relative to the top surface, the drift region. The drift electrode has a variable thickness relative to the top surface.
摘要翻译：横向扩散金属氧化物半导体（LDMOS）包括在衬底的顶表面中具有STI结构的半导体衬底，STI结构下方的漂移区域，以及STI结构的相对侧上的源极区域和漏极区域。栅极导体在STI结构和源极区之间的间隙上在衬底上，并且部分地与漂移区重叠。浮动门件超过了STI结构。保形介质层位于顶表面上，栅极导体和浮栅上，并在栅极导体和浮栅上形成台面。保形蚀刻停止层嵌入共形介电层内。在保形蚀刻停止层上相对于顶表面漂移漂移区形成漂移电极。漂移电极相对于顶表面具有可变的厚度。

72. 发明申请

US20150048447A1 LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICE WITH TAPERED DRIFT ELECTRODE 有权
标题翻译：具有切割电极的侧向扩散金属氧化物半导体（LDMOS）器件
公开(公告)号：US20150048447A1
公开(公告)日：2015-02-19
申请号：US13966312
申请日：2013-08-14
申请人： International Business Machines Corporation
发明人： Santosh Sharma , Yun Shi , Anthony K. Stamper
IPC分类号： H01L29/78 , H01L29/06 , H01L29/66
CPC分类号： H01L29/404 , H01L29/0653 , H01L29/66681 , H01L29/7816
摘要： A lateral diffusion metal oxide semiconductor (LDMOS) comprises a semiconductor substrate having an STI structure in a top surface of the substrate, a drift region below the STI structure, and a source region and a drain region on opposite sides of the STI structure. A gate conductor is on the substrate over a gap between the STI structure and the source region, and partially overlaps the drift region. Floating gate pieces are over the STI structure. A conformal dielectric layer is on the top surface and on the gate conductor and floating gate pieces and forms a mesa above the gate conductor and floating gate pieces. A conformal etch-stop layer is embedded within the conformal dielectric layer. A drift electrode is formed on the conformal etch-stop layer over, relative to the top surface, the drift region. The drift electrode has a variable thickness relative to the top surface.
摘要翻译：横向扩散金属氧化物半导体（LDMOS）包括在衬底的顶表面中具有STI结构的半导体衬底，STI结构下方的漂移区域，以及STI结构的相对侧上的源极区域和漏极区域。栅极导体在STI结构和源极区之间的间隙上在衬底上，并且部分地与漂移区重叠。浮动门件超过了STI结构。保形介质层位于顶表面上，栅极导体和浮栅上，并在栅极导体和浮栅上形成台面。保形蚀刻停止层嵌入共形介电层内。在保形蚀刻停止层上相对于顶表面漂移漂移区形成漂移电极。漂移电极相对于顶表面具有可变的厚度。

73. 发明授权

US08945956B2 Metrology test structures in test dies 有权
标题翻译：测试模具中的计量测试结构
公开(公告)号：US08945956B2
公开(公告)日：2015-02-03
申请号：US13649612
申请日：2012-10-11
申请人： International Business Machines Corporation
发明人： Anthony K. Stamper
IPC分类号： H01L21/00
CPC分类号： H01L22/34 , B81C99/004 , H01L29/84 , H01L2924/0002 , H01L2924/00
摘要： Test dies having metrology test structures and methods of manufacture are disclosed. The method includes forming one or more metrology test structures in a test die that are identical to one or more structures formed in an adjacent product chip.
摘要翻译：公开了具有计量测试结构和制造方法的测试模具。该方法包括在测试模具中形成与在相邻产品芯片中形成的一个或多个结构相同的一个或多个测量结构。

74. 发明申请

US20150021738A1 BIPOLAR JUNCTION TRANSISTORS WITH AN AIR GAP IN THE SHALLOW TRENCH ISOLATION 有权
标题翻译：带有空气隙的双极接头晶体管在浅层隔离分离器中
公开(公告)号：US20150021738A1
公开(公告)日：2015-01-22
申请号：US13946379
申请日：2013-07-19
申请人： International Business Machines Corporation
发明人： Renata Camillo-Castillo , Vibhor Jain , Vikas K. Kaushal , Marwan H. Khater , Anthony K. Stamper
IPC分类号： H01L29/735 , H01L29/66
CPC分类号： H01L29/66242 , H01L29/0649 , H01L29/0826 , H01L29/1004 , H01L29/7378
摘要： Device structures, fabrication methods, and design structures for a bipolar junction transistor. A trench isolation region is formed in a substrate. The trench isolation region is coextensive with a collector in the substrate. A base layer is formed on the collector and on a first portion of the trench isolation region. A dielectric layer is formed on the base layer and on a second portion of the trench isolation region peripheral to the base layer. After the dielectric layer is formed, the trench isolation region is at least partially removed to define an air gap beneath the dielectric layer and the base layer.
摘要翻译：双极结型晶体管的器件结构，制造方法和设计结构。在衬底中形成沟槽隔离区。沟槽隔离区域与衬底中的集电极共同延伸。基底层形成在集电器和沟槽隔离区的第一部分上。电介质层形成在基底层上和在基底层周边的沟槽隔离区域的第二部分上。在形成电介质层之后，至少部分去除沟槽隔离区域以在电介质层和基底层下方形成气隙。

75. 发明授权

US08881072B2 Method for compensating for variations in structures of an integrated circuit 有权
标题翻译：补偿集成电路结构变化的方法
公开(公告)号：US08881072B2
公开(公告)日：2014-11-04
申请号：US13759102
申请日：2013-02-05
申请人： International Business Machines Corporation
发明人： Santo Credendino , Michael D. Hulvey , Jothimalar Kuppusamy , Robert Kenneth Leidy , Paul William Pastel , Bruce Walter Porth , Anthony K. Stamper
IPC分类号： G06F17/50 , G03F1/36 , G03F1/00
CPC分类号： G06F17/50 , G03F1/144 , G03F1/36
摘要： A method of for compensating for variations in structures of an integrated circuit. The method includes (a) selecting a mask design shape and selecting a region of the mask design shape; (b) applying a model-based optical proximity correction to all of the mask design shape; and after (b), (c) applying a rules-based optical proximity correction to the selected region of the mask design shape.
摘要翻译：一种补偿集成电路结构变化的方法。该方法包括（a）选择掩模设计形状并选择掩模设计形状的区域; （b）对所有掩模设计形状应用基于模型的光学邻近校正; 以及（b）之后，（c）对掩模设计形状的选定区域应用基于规则的光学邻近校正。

76. 发明授权

US08791778B2 Vertical integrated circuit switches, design structure and methods of fabricating same 有权
标题翻译：垂直集成电路开关，设计结构及其制造方法
公开(公告)号：US08791778B2
公开(公告)日：2014-07-29
申请号：US14027768
申请日：2013-09-16
申请人： International Business Machines Corporation
发明人： Felix P. Anderson , Edward C. Cooney, III , Thomas L. McDevitt , Anthony K. Stamper
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01L2924/0002 , H01L2924/00
摘要： Vertical integrated MEMS switches, design structures and methods of fabricating such vertical switches is provided herein. The method of manufacturing a MEMS switch, includes forming at least two vertically extending vias in a wafer and filling the at least two vertically extending vias with a metal to form at least two vertically extending wires. The method further includes opening a void in the wafer from a bottom side such that at least one of the vertically extending wires is moveable within the void.
摘要翻译：本文提供垂直集成MEMS开关，制造这种垂直开关的设计结构和方法。制造MEMS开关的方法包括在晶片中形成至少两个垂直延伸的通孔，并用金属填充至少两个垂直延伸的通孔以形成至少两个垂直延伸的导线。该方法还包括从底侧打开晶片中的空隙，使得垂直延伸的线中的至少一个可在空隙内移动。

77. 发明授权

US11104572B2 Planar cavity MEMS and related structures, methods of manufacture and design structures 有权
公开(公告)号：US11104572B2
公开(公告)日：2021-08-31
申请号：US16580133
申请日：2019-09-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher V. Jahnes , Anthony K. Stamper
IPC分类号： B81C1/00 , B81B3/00 , H01L41/113 , H01H57/00 , H01H1/00 , H01P1/12
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

78. 发明授权

US10882736B2 Semiconductor structures provided within a cavity and related design structures 有权
公开(公告)号：US10882736B2
公开(公告)日：2021-01-05
申请号：US16259190
申请日：2019-01-28
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Jeffrey C. Maling , Anthony K. Stamper , Dana R. DeReus , Arthur S. Morris, III
IPC分类号： B81B3/00 , H01L29/84 , H01L23/34 , B81C1/00 , H01L21/02 , H01L41/09 , H01H1/00
摘要： Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

79. 发明授权

US10811206B2 Micro-electro-mechanical system (MEMS) and related actuator bumps, methods of manufacture and design structures 有权
公开(公告)号：US10811206B2
公开(公告)日：2020-10-20
申请号：US16207485
申请日：2018-12-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher V. Jahnes , Anthony K. Stamper
IPC分类号： H02N1/00 , H01H59/00 , B81C1/00 , G06F30/30 , G06F30/39 , B81B3/00 , B81B7/00 , H01H1/00
摘要： Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.

80. 发明授权

US10748725B2 Micro-electro-mechanical system (MEMS) and related actuator bumps, methods of manufacture and design structures 有权
公开(公告)号：US10748725B2
公开(公告)日：2020-08-18
申请号：US15406134
申请日：2017-01-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher V. Jahnes , Anthony K. Stamper
IPC分类号： H02N1/00 , H01H59/00 , B81C1/00 , G06F30/30 , G06F30/39 , B81B3/00 , B81B7/00 , H01H1/00
摘要： Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.

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