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71. 发明授权

US08033009B2 Method for producing a force sensor 有权
标题翻译：力传感器的制造方法
公开(公告)号：US08033009B2
公开(公告)日：2011-10-11
申请号：US11892493
申请日：2007-08-23
申请人： Nariaki Kuriyama , Jun Sasahara , Tadahiro Kubota , Daisuke Okamura , Takeshi Ohsato
发明人： Nariaki Kuriyama , Jun Sasahara , Tadahiro Kubota , Daisuke Okamura , Takeshi Ohsato
IPC分类号： H01C17/28
CPC分类号： G01L1/2268 , G01L5/162 , Y10T29/49103 , Y10T29/49117 , Y10T29/49124 , Y10T29/49155
摘要： There is provided a method for producing a force sensor including: a force sensor chip; and an attenuator, in which the force sensor chip and the attenuator are joined at joint portions with a glass layer sandwiched therebetween. The method includes: a film forming step in which a glass film as the glass layer is formed on regions of the attenuator containing the joint portions or on regions of the force sensor chip containing the joint portions; and an anodic bonding step in which the force sensor chip and the attenuator are stacked as a stacked body in close contact with each other at the joint portions, and the glass film and the force sensor chip, or the glass film and the attenuator, are joined.
摘要翻译：提供了一种用于产生力传感器的方法，该力传感器包括：力传感器芯片; 以及衰减器，其中力传感器芯片和衰减器在夹在其间的玻璃层的接合部分处接合。该方法包括：成膜步骤，其中在包含接合部分的衰减器的区域或包含接合部分的力传感器芯片的区域上形成作为玻璃层的玻璃膜; 以及阳极接合步骤，其中力传感器芯片和衰减器在接合部分处彼此紧密接触地堆叠成层叠体，并且玻璃膜和力传感器芯片或玻璃膜和衰减器是加入。

72. 发明申请

US20100132476A1 STRAIN SENSOR 有权
标题翻译：应变传感器
公开(公告)号：US20100132476A1
公开(公告)日：2010-06-03
申请号：US12325129
申请日：2008-11-28
申请人： Ching-Hsiang Cheng , Chen Chao , Yun Zhu
发明人： Ching-Hsiang Cheng , Chen Chao , Yun Zhu
IPC分类号： G01B7/16 , H01C17/28
CPC分类号： G01B7/18 , Y10T29/49103
摘要： A strain sensor (10) for measuring strain greater than 10%, the sensor (10) comprising: an upper polydimethylsiloxane (PDMS) substrate (20) having measurement electrodes (90) extending therethrough; a lower PDMS substrate (30) bonded to a lower surface of the upper PDMS substrate (20), and an upper surface of the lower PDMS substrate (30) having a patterned portion (50); and a conductive fluid (70) contained within the patterned portion (50) in contact with the measurement electrodes (90).
摘要翻译：一种用于测量应变大于10％的应变传感器（10），所述传感器（10）包括：具有延伸穿过其中的测量电极（90）的上部聚二甲基硅氧烷（PDMS）衬底（20）结合到上PDMS衬底（20）的下表面的下PDMS衬底（30）和具有图案部分（50）的下PDMS衬底（30）的上表面; 以及包含在与测量电极（90）接触的图案化部分（50）内的导电流体（70）。

73. 发明申请

US20100123542A1 NANO-DIMENSIONAL NON-VOLATILE MEMORY CELLS 有权
标题翻译：纳米非易失性记忆细胞
公开(公告)号：US20100123542A1
公开(公告)日：2010-05-20
申请号：US12272871
申请日：2008-11-18
申请人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01C7/10 , H01L45/00 , H01L21/02 , H01C17/28
CPC分类号： H01L45/1233 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , H01L45/1675
摘要： A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.
摘要翻译：一种包括第一电极的非易失性存储单元; 第二电极; 以及电接触区域，其电连接所述第一电极和所述第二电极，所述电接触区域具有端部和连续侧部，并且所述端部和所述连续侧部一起形成开放空腔，其中所述存储单元具有可以通过在第一电极和第二电极两端施加电压来切换的高电阻状态和低电阻状态。

74. 发明授权

US07627943B2 Method of manufacturing a pressure sensor 有权
标题翻译：制造压力传感器的方法
公开(公告)号：US07627943B2
公开(公告)日：2009-12-08
申请号：US11566279
申请日：2006-12-04
申请人： Shuji Tohyama , Takayuki Yokoyama , Ikuya Miyahara
发明人： Shuji Tohyama , Takayuki Yokoyama , Ikuya Miyahara
IPC分类号： H01C17/28
CPC分类号： G01L19/003 , G01L19/147 , Y10T29/49103 , Y10T29/49774 , Y10T29/49918 , Y10T29/49927
摘要： A method of manufacturing a pressure sensor is provided whereby the pressure sensor includes a joint, a diaphragm, and an adapter disposed between the joint and the diaphragm. The adapter includes an axis portion and a flange projecting in a radial direction from the axis portion. The axis portion is disposed such that one end does not interfere with the joint and the other end is welded to the diaphragm. The diaphragm is welded to the adapter and the welded portion the welded portion is positioned on an inner side of an end face of the joint. The joint is caulked to a peripheral edge of the flange of the adapter.
摘要翻译：提供一种制造压力传感器的方法，由此压力传感器包括接头，隔膜以及设置在接头和隔膜之间的适配器。适配器包括从轴部向径向突出的轴部和凸缘。轴部被设置为使得一端不与接头干涉，另一端焊接到隔膜。隔膜焊接到适配器，焊接部分焊接部分位于接头端面的内侧。接头被铆接到适配器的凸缘的周边边缘。

75. 发明授权

US07571536B2 Method of making capacitive/resistive devices 有权
标题翻译：制造电容/电阻设备的方法
公开(公告)号：US07571536B2
公开(公告)日：2009-08-11
申请号：US11698423
申请日：2007-01-26
申请人： David Ross McGregor
发明人： David Ross McGregor
IPC分类号： H01C17/28
CPC分类号： H05K1/167 , H01L2924/19105 , H05K1/162 , H05K3/429 , H05K2201/0355 , H05K2201/09309 , H05K2201/09672 , H05K2201/09763 , H05K2203/1453 , Y10T29/49101 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913 , Y10T29/49144 , Y10T29/49165
摘要： A method of making capacitive/resistive devices provides both resistive and capacitive functions. The capacitive/resistive devices may be embedded within a layer of a printed wiring board. Embedding the capacitive/resistive devices conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability.
摘要翻译：制造电容/电阻器件的方法提供电阻和电容功能。电容/电阻器件可以嵌入印刷线路板的层内。嵌入电容/电阻器件节省了电路板表面的空间，并减少了焊接连接的数量，从而提高了可靠性。

76. 发明申请

US20090120194A1 SILICON PRESSURE SENSOR 审中-公开
标题翻译：硅压力传感器
公开(公告)号：US20090120194A1
公开(公告)日：2009-05-14
申请号：US11937438
申请日：2007-11-08
申请人： Curtis H. Rahn , Russell L. Johnson
发明人： Curtis H. Rahn , Russell L. Johnson
IPC分类号： G01L7/08 , H01C17/28
CPC分类号： G01L9/0047 , G01L9/0054 , G01L9/06 , Y10T29/49103
摘要： A diaphragm for a pressure sensor includes a central portion having a primary thickness and a surrounding secondary portion having a secondary thickness greater than the primary thickness. The pressure sensor includes the diaphragm, a fluid conduit capped by the diaphragm, and a piezoelectric bridge for each of the primary and secondary portions to generate a signal indicative of the displacement of the portions; and a method of producing the sensor.
摘要翻译：用于压力传感器的隔膜包括具有初级厚度的中心部分和具有大于初级厚度的次级厚度的周围次级部分。压力传感器包括隔膜，由隔膜封闭的流体导管，以及用于每个初级和次级部分的压电桥，以产生指示部分位移的信号; 和传感器的制造方法。

77. 发明申请

US20090056462A1 MANUFACTURING METHOD OF PRESSURE SENSOR AND PRESSURE SENSOR 有权
标题翻译：压力传感器和压力传感器的制造方法
公开(公告)号：US20090056462A1
公开(公告)日：2009-03-05
申请号：US12205122
申请日：2008-09-05
申请人： Yoshikazu Kaneko , Hiroshi Kodama , Hiroshi Wakabayashi
发明人： Yoshikazu Kaneko , Hiroshi Kodama , Hiroshi Wakabayashi
IPC分类号： G01L9/04 , H01C17/28
CPC分类号： G01L9/0051 , G01L19/0038 , G01L19/147 , Y10T29/49103
摘要： A manufacturing method of a pressure sensor that includes a pressure detector having a bottomed cylindrical member with a bottom including a thin-wall portion and a strain detecting mechanism provided on one side of the bottom for detecting a strain of the bottom and a pressure-introducing joint for introducing the fluid to be measured into the bottomed cylindrical member is provided. The method includes: first welding for butt-welding an end of the cylindrical portion of the bottomed cylindrical member and an end of the pressure-introducing joint; and second welding for welding the pressure-introducing joint in parallel to a first weld bead formed by the first welding.
摘要翻译：一种压力传感器的制造方法，其特征在于，具备压力检测器，所述压力检测器具有底部包括薄壁部分的底部筒状部件和设置在底部的一侧的应变检测机构，用于检测底部的应变和压力导入提供用于将被测量的流体引入有底圆柱形构件的接头。该方法包括：首先焊接有底圆柱形构件的圆柱形部分的端部和压力引入接头的端部的对接焊接; 以及第二焊接，用于将压力引入接头平行于通过第一焊接形成的第一焊道焊接。

78. 发明申请

US20080314165A1 Method for Manufacturing Long Force Sensors Using Screen Printing Technology 失效
标题翻译：使用丝网印刷技术制造长效传感器的方法
公开(公告)号：US20080314165A1
公开(公告)日：2008-12-25
申请号：US11917798
申请日：2006-06-16
申请人： Ilya D. Rosenberg
发明人： Ilya D. Rosenberg
IPC分类号： G01L1/04 , H01C17/28
CPC分类号： A63B71/0605 , A63B2071/0611 , A63C19/065 , Y10T29/49007 , Y10T29/49103 , Y10T29/49128 , Y10T29/4913 , Y10T29/49826
摘要： A force or pressure sensor and appertaining method for manufacturing are provided in which the sensor comprises a repeating conductive trace pattern that can be replicated to produce a consistent conductive trace across more than one adjacent pattern section forming an electrical bus, wherein more than one section of a series of conductive traces are printed on a thin and flexible dielectric backing using the pattern. The thin and flexible dielectric backing has a repeated pattern of conductive traces printed above the dielectric backing and one or more dielectric layers provided above the conductive traces, the dielectric layers having access regions permitting contact of conductors above the one or more dielectric layers, and a sensor conductor layer printed above the one or more dielectric layers that contacts the conductive traces via at least one of the access regions or regions not covered by the one or more dielectric layers.
摘要翻译：提供了一种力或压力传感器及其制造方法，其中传感器包括可复制的重复导电迹线图案，以在形成电母线的多于一个相邻图案部分上产生一致的导电迹线，其中多于一使用该图案将一系列导电迹线印刷在薄且柔性的电介质背衬上。薄且柔性的电介质背衬具有在电介质背衬上印刷的导电迹线的重复图案，以及设置在导电迹线上方的一个或多个电介质层，电介质层具有允许接触导体在一个或多个电介质层上方的接触区域，以及传感器导体层印刷在通过至少一个未被一个或多个电介质层覆盖的接近区域中的至少一个上接触导电迹线的一个或多个电介质层上方。

79. 发明申请

US20080202249A1 Semiconductor sensor and method of manufacturing the same 有权
标题翻译：半导体传感器及其制造方法
公开(公告)号：US20080202249A1
公开(公告)日：2008-08-28
申请号：US12010758
申请日：2008-01-29
申请人： Hisanori Yokura , Yoshihiko Isobe , Eishi Kawasaki
发明人： Hisanori Yokura , Yoshihiko Isobe , Eishi Kawasaki
IPC分类号： G01L9/04 , H01C17/28
CPC分类号： G01L9/0055 , G01K5/52 , G01L1/2293 , H01L2224/02166 , Y10T29/49103
摘要： A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.
摘要翻译：一种半导体压力感测装置，包括具有隔膜的金属杆和结合到隔膜的半导体传感器。半导体传感器包括测量部分和第一和第二接合焊盘。仪表部分被配置为根据隔膜的变形而变形。第一和第二接合焊盘分别连接到量规部分的不同位置，使得第一和第二接合焊盘之间的电阻随着隔膜变形的改变而改变。测量部分形成为绝缘体上硅衬底的半导体层。通过激活半导体传感器和隔膜之间的接触表面，半导体传感器直接接合到隔膜。

80. 发明申请

US20080022513A1 Method of fabricating an artificial haircell 审中-公开
标题翻译：制造人造毛细胞的方法
公开(公告)号：US20080022513A1
公开(公告)日：2008-01-31
申请号：US11880131
申请日：2007-07-20
申请人： Chang Liu , Jack Chen , Jonathan Engel
发明人： Chang Liu , Jack Chen , Jonathan Engel
IPC分类号： H01C17/28
CPC分类号： G01K7/186 , G01F1/28 , G01F1/6845 , G01K7/015 , G01L5/228 , G01L19/0092 , G01N13/00 , G01N2203/0676 , G01P5/12 , Y10T29/49103
摘要： Method of fabricating an artificial haircell. A cilium, a strain gauge connected to the cilium, and a ductile hinge are microfabricated on a substrate by surface micromachining. The cilium and the strain gauge are raised with respect to the substrate by application of a magnetic field, thus bending the hinge.
摘要翻译：制造人造毛细胞的方法通过表面微加工，在基底上微纤维，连接到纤毛的应变计和延性铰链被微制成。通过施加磁场使纤维和应变计相对于基底升高，从而弯曲铰链。

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