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71. 发明申请

US20120006409A1 Thin Silicon Sheets for Solar Cells 审中-公开
标题翻译：太阳能电池薄硅片
公开(公告)号：US20120006409A1
公开(公告)日：2012-01-12
申请号：US13181972
申请日：2011-07-13
申请人： Andrew William Blakers , Klaus Johannes Weber
发明人： Andrew William Blakers , Klaus Johannes Weber
IPC分类号： H01L31/0264 , B32B3/30
CPC分类号： H01L31/1804 , C30B29/06 , C30B33/00 , H01L21/30608 , H01L31/022425 , H01L31/022441 , H01L31/0516 , H01L31/0682 , Y02E10/547 , Y02P70/521 , Y10T428/2457
摘要： A thin layer of single-crystal silicon is produced by forming first trenches in a silicon substrate having (111) orientation; forming narrower second trenches at the base of the trenches; anisotropically etching lateral channels (4) from the second trenches, until adjacent etch fonts (16) substantially meet; and detaching said layer from the substrate. The trenches may be arranged so that the resultant layer has rows of slots, with the slots in adjacent rows being mutually offset. Solar cells may be formed on strips having two electrical contacts on the same face (6) of each strip (5).
摘要翻译：通过在具有（111）取向的硅衬底中形成第一沟槽来产生薄层的单晶硅; 在沟槽底部形成较窄的第二沟槽; 各向异性地从第二沟槽蚀刻横向通道（4），直到相邻的蚀刻字体（16）基本上相遇; 并从衬底上分离所述层。沟槽可以布置成使得所得层具有一排槽，相邻排中的槽相互偏移。太阳能电池可以形成在每个条带（5）的同一面（6）上的具有两个电触头的条上。

72. 发明申请

US20110318868A1 Protective Layer for Large-Scale Production of Thin-Film Solar Cells 有权
标题翻译：薄膜太阳能电池大规模生产保护层
公开(公告)号：US20110318868A1
公开(公告)日：2011-12-29
申请号：US13230305
申请日：2011-09-12
申请人： Chris Schmidt , John Corson
发明人： Chris Schmidt , John Corson
IPC分类号： H01L31/0264
CPC分类号： H01L31/022425 , H01L31/022466 , H01L31/0392 , H01L31/03928 , H01L31/056 , Y02E10/52 , Y02E10/541
摘要： A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 μm, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.
摘要翻译：太阳能电池包括基板，位于基板的第一表面上的保护层，位于基板的第二表面上的第一电极，位于第一电极上方的至少一个p型半导体吸收层，n型半导体层位于p型半导体吸收体层上方，第二电极位于n型半导体层的上方。 p型半导体吸收层包括基于铜铟硒（CIS）的合金材料，第二电极是透明和导电的。保护层的波长为2μm时的发射率大于0.25，与含有硒的气体的反应性低于衬底的反应性，并且与第一电极的组成，厚度，密度，发射率，电导率或应力状态。保护层的发射率曲线可以是均匀的或不均匀的。

73. 发明申请

US20110315216A1 COLOR BUILDING-INTEGRATED PHOTOVOLTAIC (BIPV) MODULE 审中-公开
标题翻译：彩色建筑一体化（BIPV）模块
公开(公告)号：US20110315216A1
公开(公告)日：2011-12-29
申请号：US13169868
申请日：2011-06-27
申请人： Liang-Jyi CHEN , Hung-Chun TSAI , Yu-Ting LIN
发明人： Liang-Jyi CHEN , Hung-Chun TSAI , Yu-Ting LIN
IPC分类号： H01L31/0216 , B32B38/00 , H01L31/032 , H01L31/18 , H01L31/0264 , H01L31/036
CPC分类号： B32B37/153 , B32B2307/402 , B32B2309/105 , B32B2367/00 , B32B2457/12 , H01L31/049 , Y02A30/62 , Y02B10/10 , Y02E10/50
摘要： The present invention provides a color backsheet for a building-integrated photovoltaic (BIPV) module comprising a polyethylene terephthalate (PET) film and a fluorine-containing polymer film, at least one of the films being doped with dyes or pigments. The present invention also provides a color BIPV module comprising the color backsheet according to the present invention.
摘要翻译：本发明提供了一种用于建筑物集成光伏（BIPV）模块的彩色背板，其包括聚对苯二甲酸乙二醇酯（PET）膜和含氟聚合物膜，至少一个膜掺杂有染料或颜料。本发明还提供了一种彩色BIPV模块，其包括根据本发明的彩色底片。

74. 发明申请

US20110259418A1 Manufacturing Apparatus and Method for Large-Scale Production of Thin-Film Solar Cells 有权
标题翻译：薄膜太阳能电池大规模生产的制造装置和方法
公开(公告)号：US20110259418A1
公开(公告)日：2011-10-27
申请号：US13173507
申请日：2011-06-30
申请人： Dennis R. Hollars
发明人： Dennis R. Hollars
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0264
CPC分类号： H01L31/18 , C23C14/0057 , C23C14/3414 , C23C14/352 , C23C14/562 , H01L31/022425 , H01L31/0322 , H01L31/0336 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1-X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.
摘要翻译：完全通过溅射制造改进的薄膜太阳能电池的方法包括含有由过渡金属氮化物组成的至少一个阻挡层的高效率背接触/反射多层。使用双圆柱形旋转磁控管技术，由专门制备的导电靶共溅射铜铟镓二硒化物（Cu（In x Ga 1-x）Se 2）吸收层（X为1至约0.7）。吸收层的带隙可以通过改变镓含量来分级，并且通过用铝部分或全部替换镓来分级。或者，在硒化氢气体存在下，吸收层从金属合金靶反应溅射。使用RF溅射沉积含有ZnS的不含镉的窗口层。顶部透明电极是反应溅射的铝掺杂的ZnO。描述了一种独特的模块化真空辊对辊溅射机。该机器适用于采用双圆柱形旋转磁控管技术，以单程制造改进的太阳能电池材料。

75. 发明申请

US20110226306A1 ADDITIVES FOR SOLAR CELL SEMICONDUCTORS 审中-公开
标题翻译：太阳能电池半导体添加剂
公开(公告)号：US20110226306A1
公开(公告)日：2011-09-22
申请号：US13030055
申请日：2011-02-17
申请人： John C. Warner
发明人： John C. Warner
IPC分类号： H01L31/0352 , H01L31/02 , H01L31/0216 , H01L31/0248 , H01L31/042 , H01L31/0264
CPC分类号： H01G9/2036 , H01G9/2059 , Y02E10/542
摘要： A dye-sensitized solar cell (“DSSC”) includes an anode, a cathode, a semiconductor layer, a dye covalently attached to the semiconductor layer, and an electrolyte, wherein the semiconductor layer includes a metal oxide and an organic or inorganic insulating component to facilitate forward transfer of electrons to the anode. The semiconductor additive or insulating component may include, for example, alpha aluminum oxide, gamma aluminum oxide, fumed silica, silica, diatomaceous earth, aluminum titanate, hydroxyapatite, calcium phosphate, iron titanate, and mixtures thereof.
摘要翻译：染料敏化太阳能电池（“DSSC”）包括阳极，阴极，半导体层，共价连接到半导体层的染料和电解质，其中半导体层包括金属氧化物和有机或无机绝缘组分以促进电子向阳极的正向转移。半导体添加剂或绝缘组分可以包括例如α氧化铝，γ-氧化铝，热解二氧化硅，二氧化硅，硅藻土，钛酸铝，羟基磷灰石，磷酸钙，钛酸铁及其混合物。

76. 发明申请

US20110209763A1 METHOD OF MANUFACTURING THIN-FILM LIGHT-ABSORBING LAYER, AND METHOD OF MANUFACTURING THIN-FILM SOLAR CELL USING THE SAME 失效
标题翻译：制造薄膜吸收层的方法及使用其制造薄膜太阳能电池的方法
公开(公告)号：US20110209763A1
公开(公告)日：2011-09-01
申请号：US13034262
申请日：2011-02-24
申请人： Jung-Min CHO , Eun-Jin Bae , Chang-Woo Ham , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
发明人： Jung-Min CHO , Eun-Jin Bae , Chang-Woo Ham , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
IPC分类号： H01L31/0272 , H01L31/0264
CPC分类号： H01L31/0322 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/022466 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Disclosed is a method of manufacturing a thin-film light-absorbing layer using spraying, including mixing precursor solutions comprising CuCl2, InCl3 and SeC(NH2)2 under a nitrogen atmosphere at room temperature thus preparing a mixture solution; spraying the mixture solution on a substrate and drying it, thus forming a thin film; and selenizing the thin film under a selenium atmosphere. A method of manufacturing a thin-film solar cell is also provided, which includes forming a back contact layer on a glass substrate using sputtering; forming a light-absorbing layer on the back contact layer using spraying; forming a buffer layer on the light-absorbing layer using chemical vapor deposition; forming a window layer on the buffer layer using sputtering; and forming an upper electrode layer on the window layer.
摘要翻译：公开了一种使用喷雾制造薄膜光吸收层的方法，包括在室温下在氮气气氛下混合包含CuCl 2，InCl 3和SeC（NH 2）2的前体溶液，从而制备混合溶液; 将混合溶液喷在基片上并干燥，形成薄膜; 并在硒气氛下对薄膜进行硒化。还提供了一种制造薄膜太阳能电池的方法，其包括使用溅射在玻璃基板上形成背接触层; 使用喷雾在所述背面接触层上形成光吸收层; 使用化学气相沉积在所述光吸收层上形成缓冲层; 使用溅射在缓冲层上形成窗口层; 并在窗口层上形成上电极层。

77. 发明申请

US20110192463A1 CIGS SOLAR CELL STRUCTURE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译： CIGS太阳能电池结构及其制造方法
公开(公告)号：US20110192463A1
公开(公告)日：2011-08-11
申请号：US13089281
申请日：2011-04-18
申请人： Chuan-Lung Chuang
发明人： Chuan-Lung Chuang
IPC分类号： H01L31/0264
CPC分类号： H01L31/022425 , H01L31/0322 , H01L31/072 , H01L31/18 , H02S30/20 , Y02E10/541
摘要： A copper/indium/gallium/selenium (CIGS) solar cell structure and a method for fabricating the same are provided. The CIGS solar cell structure includes a substrate, a molybdenum thin film layer, an alloy thin film layer, and a CIGS thin film layer. The alloy thin film layer is provided between the molybdenum thin film layer and the CIGS thin film layer, serving as a conductive layer of the CIGS solar cell structure. The alloy thin film layer is composed of a variety of high electrically conductive materials (such as molybdenum, copper, aluminum, and silver) in different atomic proportions.
摘要翻译：提供铜/铟/镓/硒（CIGS）太阳能电池结构及其制造方法。 CIGS太阳能电池结构包括基板，钼薄膜层，合金薄膜层和CIGS薄膜层。合金薄膜层设置在作为CIGS太阳能电池结构的导电层的钼薄膜层和CIGS薄膜层之间。合金薄膜层由不同原子比例的各种高导电材料（如钼，铜，铝和银）构成。

78. 发明申请

US20110180130A1 Highly-conductive and textured front transparent electrode for a-si thin-film solar cells, and/or method of making the same 审中-公开
标题翻译：用于a-si薄膜太阳能电池的高导电和纹理化的前透明电极，和/或其制造方法
公开(公告)号：US20110180130A1
公开(公告)日：2011-07-28
申请号：US12656284
申请日：2010-01-22
申请人： Alexey Krasnov , Willem den Boer
发明人： Alexey Krasnov , Willem den Boer
IPC分类号： C23C14/34 , H01L31/0264 , H05K13/00
CPC分类号： H01L31/1884 , C03C17/3482 , C03C2217/948 , C03C2218/152 , C03C2218/154 , H01L31/022466 , Y02E10/50 , Y10T29/49002
摘要： Certain example embodiments incorporate a “hybrid” design for the front electrode of solar cells, which advantageously combines naturally textured pyrolytic tin oxide and highly-conductive sputtered indium tin oxide (ITO). In certain example embodiments of this invention, a method of making a front electrode superstrate for a solar cell is provided. A glass substrate is provided. A layer of tin oxide is pyrolytically deposited on the glass substrate, with the layer of tin oxide being textured as a result of the pyrolytic deposition and with the layer of tin oxide being haze producing. A layer of indium tin oxide (ITO) is sputter-deposited on the layer of tin oxide, with the layer of ITO being generally conformal with respect to the layer of tin oxide. An amorphous silicon (a-Si) thin film layer stack is formed on the layer of ITO in making the front electrode superstrate.
摘要翻译：某些示例性实施例包括用于太阳能电池的前电极的“混合”设计，其有利地结合天然织构化的热解氧化锡和高导电性溅射氧化铟锡（ITO）。在本发明的某些示例性实施例中，提供了制造用于太阳能电池的前电极覆层的方法。提供玻璃基板。一层氧化锡被热解沉积在玻璃基底上，氧化锡层由于热解沉积而被纹理化，并且氧化锡层产生雾状。一层氧化铟锡（ITO）溅射沉积在氧化锡层上，其中ITO层相对于氧化锡层大致保形。在ITO层上形成非晶硅（a-Si）薄膜层叠层，制成前电极覆层。

79. 发明申请

US20110168258A1 LAYER SYSTEM FOR SOLAR CELLS 有权
标题翻译：太阳能电池层系统
公开(公告)号：US20110168258A1
公开(公告)日：2011-07-14
申请号：US12992199
申请日：2009-05-19
申请人： Jorg Palm
发明人： Jorg Palm
IPC分类号： H01L31/0272 , H01L31/0264 , H01L31/0376
CPC分类号： H01L31/0322 , H01L31/0749 , Y02E10/541
摘要： The present invention relates to a layer system (1) for thin-film solar cells and solar modules based on CIS-absorbers (4). The layer system (1) according to the invention has a buffer layer (4) made of In2(S1−x,Sex)3+δ, wherein 0≦x≦1 and −1≦δ≦1. Additionally, the buffer layer (5) is amorphously designed. With this buffer layer (5), the disadvantages of CdS-buffers frequently used to date, namely toxicity and poor process integration, are overcome, whereby in addition to high efficiency, high long-term stability is also achieved; and thus again the disadvantages of conventional buffer layers alternative to CdS do not exist.
摘要翻译：本发明涉及一种用于薄膜太阳能电池的层系统（1）和基于CIS吸收体（4）的太阳能模块。根据本发明的层系统（1）具有由In2（S1-x，Sex）3 +δ制成的缓冲层（4），其中0＆nlE; x＆nlE; 1和-1＆nlE;δ＆nlE; 1。此外，缓冲层（5）是无定形设计的。对于这种缓冲层（5），克服了迄今为止经常使用的CdS缓冲液的缺点，即毒性和过程整合不良，除了高效率之外，还实现了高长期稳定性; 因此不再存在替代CdS的常规缓冲层的缺点。

80. 发明申请

US20110162716A1 DEVICE FOR FABRICATING A PHOTOVOLTAIC ELEMENT WITH STABILISED EFFICIENCY 审中-公开
标题翻译：用于制造具有稳定效率的光伏元件的装置
公开(公告)号：US20110162716A1
公开(公告)日：2011-07-07
申请号：US12971232
申请日：2010-12-17
申请人： Axel Herguth , Gunnar Schubert , Giso Hahn , Ihor Melnyk , Martin Käs
发明人： Axel Herguth , Gunnar Schubert , Giso Hahn , Ihor Melnyk , Martin Käs
IPC分类号： H01L31/0264 , H01L31/18 , H05B3/68
CPC分类号： H01L31/1864 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method and device for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilization treatment step.
摘要翻译：提出了一种用于制造具有稳定效率的光电元件的方法和装置。该方法包括以下步骤：制备硼掺杂的含氧硅衬底; 在所述硅衬底的表面上形成发射极层; 和稳定化处理步骤。稳定化处理步骤包括将处理时间内的基板的温度保持在温度下限为50℃，优选为90℃，更优选为130℃，甚至更优选为160℃的可选温度范围内并且上限温度为230℃，优选为210℃，更优选为190℃，甚至更优选为180℃，并且在处理时间内在硅衬底中产生过量的少数载流子，例如，通过照射衬底或施加外部电压。该方法可用于制造光电元件，例如，太阳能电池或太阳能组件，其效率比在没有稳定化处理步骤的光电元件的值高的情况下是稳定的。

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