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1. 发明授权

US09786804B2 Thin-film solar cell and production method for thin-film solar cell 有权
公开(公告)号：US09786804B2
公开(公告)日：2017-10-10
申请号：US14904034
申请日：2014-06-19
申请人： Solar Frontier K.K.
发明人： Yasuaki Iwata , Hiroki Sugimoto , Hideki Hakuma
IPC分类号： H01L31/00 , H01L31/0749 , H01L31/032 , H01L31/0392 , H01L31/18 , H01L31/065 , H01L21/02 , C23C14/18 , C23C14/58 , C23C28/00
CPC分类号： H01L31/0749 , C23C14/185 , C23C14/5866 , C23C28/32 , H01L21/02568 , H01L21/02614 , H01L31/0322 , H01L31/03923 , H01L31/03928 , H01L31/065 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A thin-film solar cell comprising a substrate, a first electrode layer arranged upon the substrate, a p-type light absorption layer formed by a group I-III-IV2 compound arranged upon the first electrode layer, and an n-type second electrode layer arranged upon the p-type light absorption layer. The p-type light absorption layer includes Cu as a group 1 element and includes Ga and In as group III elements. The ratio of the atomic number between Cu and the group III elements in the entire p-type light absorption layer is lower than 1.0; the ratio of the atomic number between Ga and the group III elements in the surface on the second electrode layer side is no more than 0.13; and the ratio of the atomic number between Cu and the group III elements in the surface on the second electrode layer side is at least 1.0.

2. 发明授权

US09614111B2 CIGS film, and CIGS solar cell employing the same 有权
公开(公告)号：US09614111B2
公开(公告)日：2017-04-04
申请号：US14766552
申请日：2014-01-24
申请人： NITTO DENKO CORPORATION
发明人： Seiki Teraji , Hiroto Nishii , Taichi Watanabe , Yusuke Yamamoto , Kazunori Kawamura , Takashi Minemoto , Jakapan Chantana
IPC分类号： H01L31/00 , H01L31/032 , H01L31/0392 , H01L31/0749 , H01L21/02 , H01L31/065
CPC分类号： H01L31/0322 , H01L21/02485 , H01L21/0251 , H01L21/02568 , H01L31/03923 , H01L31/03928 , H01L31/065 , H01L31/0749 , Y02E10/50 , Y02E10/541 , Y02E10/543
摘要： The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

3. 发明授权

US09478695B2 Interface between a I/III/VI2 layer and a back contact layer in a photovoltaic cell 有权
标题翻译：光伏电池中的I / III / VI2层和背接触层之间的界面
公开(公告)号：US09478695B2
公开(公告)日：2016-10-25
申请号：US14358185
申请日：2012-11-22
申请人： NEXCIS
发明人： Stephanie Angle , Ludovic Parissi
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/04 , H01L31/0749 , H01L31/0296 , H01L21/02 , H01L31/032 , H01L31/0392
CPC分类号： H01L31/1864 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L21/02658 , H01L31/022425 , H01L31/0296 , H01L31/0322 , H01L31/0392 , H01L31/03928 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： The invention relates to a method of manufacturing a I-III-VI2 layer with photovoltaic properties, comprising: deposition of a metal on a substrate to form a contact layer, deposition of a precursor of the photovoltaic layer, on the contact layer, and heat treatment of the precursor with an addition of element VI to form the I-III-VI2 layer. The element VI usually diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a superficial layer (SUP) on the contact layer.In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficial layer, particularly its thickness.
摘要翻译：在本发明的方法中，金属沉积包括在金属中添加另外的元素以在接触层中形成化合物（MO-EA）的步骤，其作为元件VI的扩散的屏障，这允许精确控制表层的性质，特别是其厚度。

4. 发明授权

US09378947B2 Buffer layer deposition for thin-film solar cells 有权
标题翻译：用于薄膜太阳能电池的缓冲层沉积
公开(公告)号：US09378947B2
公开(公告)日：2016-06-28
申请号：US13273013
申请日：2011-10-13
申请人： Jeffrey S. Britt , Scot Albright , Urs Schoop
发明人： Jeffrey S. Britt , Scot Albright , Urs Schoop
IPC分类号： H01L31/18 , H01L21/02 , C23C18/12 , H01L31/032 , H01L31/0392 , H01L31/0749
CPC分类号： H01L31/1876 , C23C18/1204 , C23C18/1283 , H01L21/02422 , H01L21/02425 , H01L21/02485 , H01L21/02551 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0322 , H01L31/0392 , H01L31/03925 , H01L31/03928 , H01L31/0749 , H01L31/1864 , Y02E10/541
摘要： Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements.
摘要翻译：用于在衬底网上形成硫族化物的薄膜缓冲层的改进的方法和装置。包含缓冲层或反应物的反应物的溶液可以单独地分配到基材网，而不是在其应用之前混合。幅材和/或分配的溶液可以被多个加热元件加热。

5. 发明授权

US09331221B2 Lift-off layer for separation and disposal of energy conversion devices 有权
标题翻译：剥离层用于分离和处置能量转换装置
公开(公告)号：US09331221B2
公开(公告)日：2016-05-03
申请号：US13579929
申请日：2012-04-23
申请人： Sung-Wei Chen , Christopher J. Rothfuss
发明人： Sung-Wei Chen , Christopher J. Rothfuss
IPC分类号： H01L31/02 , H01L31/032 , H01L31/0392
CPC分类号： H01L31/0322 , H01L31/03923 , H01L31/03928 , Y02E10/541
摘要： Separation layers, usable in devices for converting radiation energy to electrical energy, allow at least some of the components of the devices to be separated from one another for disposal thereof. A separation layer may be interposed between and bonded to adjoining layers, and when acted upon by application of an external source, may be degraded to release the layers from one another. Once released, the layers may be disposed of more efficiently and economically, including proper disposal of hazardous waste, and recycling of materials which may be re-usable.
摘要翻译：可用于将辐射能转换成电能的装置中的分离层允许装置中的至少一些部件彼此分离以进行处理。分离层可以插入在邻接层之间并且结合到相邻层，并且当通过施加外部源而起作用时，可能会降解以将层彼此释放。一旦释放，可以更有效和经济地处理这些层，包括妥善处置危险废物，以及回收可重复使用的材料。

6. 发明申请

US20160060785A1 Method to Fabricate Thin Film Solar Cell Absorbers with Roll-to-Roll Electroplating-Spraying Hybrid Apparatus 审中-公开
标题翻译：用辊对电镀喷涂混合装置制造薄膜太阳能电池吸收体的方法
公开(公告)号：US20160060785A1
公开(公告)日：2016-03-03
申请号：US14474176
申请日：2014-08-31
申请人： Jiaxiong Wang
发明人： Jiaxiong Wang
IPC分类号： C25D17/02 , H01L31/032 , H01L31/18
CPC分类号： C25D17/02 , C23C18/08 , C23C28/34 , C25D3/38 , C25D7/0621 , C25D7/0642 , H01L31/0322 , H01L31/03928 , H01L31/046 , H01L31/1828 , H01L31/1876 , H01L31/206 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： An electroplating-spraying hybrid apparatus that is assembled with modular electroplating sections in a roll-to-roll continuous electroplating and spraying process is provided. The length of the electroplating cell for a modular electroplating section is adjustable to fit different current densities and deposition thickness required in a roll-to-roll process. In addition, the electrolyte solution tanks can be simply connected or disconnected from the modular electroplating sections and moved away. With these designs, a multiple layers of coating with different metals or semiconductors can be electrodeposited through this apparatus with a flexibility to easily change the plating orders of different materials. Moreover, some dopant layers can be deposited with a spray pyrolysis method to coat materials that are not suitable for electroplating. This apparatus is particularly useful in manufacturing Group IB-IIIA-VIA and Group IIB-VIA thin film solar cells such as CIGS and CdTe absorbers on flexible substrates through a roll-to-roll process.
摘要翻译：提供了一种电镀喷涂混合设备，其以卷对连续电镀和喷涂工艺组装有模块化电镀部分。用于模块化电镀部分的电镀电池的长度可调节以适应卷对卷过程中所需的不同电流密度和沉积厚度。此外，电解液罐可以简单地与模块化电镀部分连接或断开并移开。利用这些设计，可以通过该装置电沉积具有不同金属或半导体的多层涂层，其灵活性容易地改变不同材料的镀层顺序。此外，可以用喷雾热解法沉积一些掺杂剂层以涂覆不适合于电镀的材料。该设备在通过卷对卷方法在柔性基板上制造IB-IIIA-VIA族和IIB-VIA族薄膜太阳能电池（例如CIGS和CdTe吸收剂）特别有用。

7. 发明申请

US20160056319A1 PHOTOVOLTAIC MODULE WITH INTEGRATED CURRENT COLLECTION AND INTERCONNECTION 审中-公开
标题翻译：具有集成电流收集和互连的光伏模块
公开(公告)号：US20160056319A1
公开(公告)日：2016-02-25
申请号：US14932059
申请日：2015-11-04
申请人： Apollo Precision Fujian Limited
发明人： Bruce HACHTMANN , Shefali CHANDRA , Puthur PAULSON , William SANDERS , Ben TARBELL
IPC分类号： H01L31/05 , H01L31/048
CPC分类号： H01L31/0508 , H01L31/03928 , H01L31/048 , H01L31/0512 , H02S20/23 , Y02B10/12 , Y02E10/541
摘要： A photovoltaic module includes a first photovoltaic cell, a second photovoltaic cell, and a collector-connector which is configured to collect current from the first photovoltaic cell and to electrically connect the first photovoltaic cell with the second photovoltaic cell. The collector-connector may include an electrically insulating carrier and at least one electrical conductor which electrically connects the first photovoltaic cell to the second photovoltaic cell.
摘要翻译：光伏模块包括第一光伏电池，第二光伏电池和集电器连接器，其被配置为从第一光伏电池收集电流并将第一光伏电池与第二光伏电池电连接。收集器 - 连接器可以包括电绝缘载体和将第一光伏电池电连接到第二光伏电池的至少一个电导体。

8. 发明申请

US20150263195A1 SOLAR CELL AND METHOD OF FABRICATING SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20150263195A1
公开(公告)日：2015-09-17
申请号：US14210493
申请日：2014-03-14
申请人： TSMC Solar Ltd.
发明人： Chien-Yao HUANG
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/03923 , H01L31/03928 , H01L31/0465 , H01L31/0749 , Y02E10/541
摘要： A solar cell and a method of fabricating the solar cell is described. The solar cell includes a substrate, a back contact layer over the substrate, a P1 trench on an upper portion of the back contact layer, and an insulator disposed in the P1 trench. The solar cell can also include an absorber layer over the back contact layer and insulator and a front contact layer over the absorber layer.
摘要翻译：描述太阳能电池和制造太阳能电池的方法。太阳能电池包括衬底，衬底上的背接触层，背接触层的上部上的P1沟槽和设置在P1沟槽中的绝缘体。太阳能电池还可以包括在后接触层和绝缘体上的吸收层和在吸收层上方的前接触层。

9. 发明申请

US20150255667A1 APPARATUS AND METHODS FOR MANUFACTURING THIN-FILM SOLAR CELLS 审中-公开
公开(公告)号：US20150255667A1
公开(公告)日：2015-09-10
申请号：US14722010
申请日：2015-05-26
申请人： Hanergy Hi-Tech Power (HK) Limited
发明人： Jeffrey S. BRITT , Scott WIEDEMAN
IPC分类号： H01L31/18 , H01L31/032 , H01L31/0392 , C23C14/56
CPC分类号： H01L31/1876 , C23C14/024 , C23C14/0623 , C23C14/22 , C23C14/243 , C23C14/542 , C23C14/562 , H01L31/0322 , H01L31/03923 , H01L31/03928 , H01L31/0445 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.

10. 发明申请

US20150187572A1 INTERLAYER DESIGN FOR EPITAXIAL GROWTH OF SEMICONDUCTOR LAYERS 审中-公开
标题翻译：中间层设计用于半导体层的外延生长
公开(公告)号：US20150187572A1
公开(公告)日：2015-07-02
申请号：US14658972
申请日：2015-03-16
申请人： ZETTA RESEARCH AND DEVELOPMENT LLC - AQT SERIES
发明人： Erol GIRT , Mariana Rodica MUNTEANU
IPC分类号： H01L21/02 , H01L29/04
CPC分类号： H01L21/02433 , H01L21/02422 , H01L21/02488 , H01L21/02491 , H01L21/02505 , H01L21/02513 , H01L21/02516 , H01L21/02521 , H01L29/045 , H01L31/0368 , H01L31/03682 , H01L31/0392 , H01L31/03923 , H01L31/03925 , H01L31/03926 , H01L31/03928 , H01L31/068 , H01L31/0682 , H01L31/1872 , Y02E10/541 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.
摘要翻译：在一个实施方案中，使用沉积在种子层上的非晶或纳米晶种层和一个或多个金属层与fcc，hcp或bcc晶体结构的组合来使用层间结构来外延取向在非单晶衬底上的半导体层。在一些实施方案中，该层间结构用于建立多个半导体层的外延生长，半导体和氧化物层的组合，半导体和金属层的组合以及半导体，氧化物和金属层的组合。该层间结构也可用于光伏电池中p型和n型半导体的外延生长。

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