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81. 发明授权

US08987132B2 Double solder bumps on substrates for low temperature flip chip bonding 有权
公开(公告)号：US08987132B2
公开(公告)日：2015-03-24
申请号：US14467564
申请日：2014-08-25
申请人： International Business Machines Corporation
发明人： Peter A. Gruber , Paul A. Lauro , Jae-Woong Nah
IPC分类号： H01L21/00 , H01L23/00
CPC分类号： H05K3/3436 , B23K1/0016 , B23K3/0638 , H01L21/4853 , H01L21/563 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/11011 , H01L2224/13076 , H01L2224/131 , H01L2224/13147 , H01L2224/16113 , H01L2224/16238 , H01L2224/73204 , H01L2224/81065 , H01L2224/81193 , H01L2224/814 , H01L2224/81815 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01083 , H01L2924/14 , H01L2924/20104 , H01L2924/20106 , H01L2924/20107 , H01L2924/35 , H05K3/3494 , H05K13/0465 , H05K2203/043 , H01L2924/00014 , H01L2924/014
摘要： Multiple injections of molten solder are employed to form double solder bumps having outer layers that melt at lower temperatures than the inner portions thereof. During a flip chip assembly process, the reflow temperature is above the melting temperature of the outer layers and below the melting temperature of the inner portions of the solder bumps. As the inner portions of the solder bumps do not collapse during reflow, a flip chip assembly can be made at relatively low temperatures and have a high stand-off height. A structure having double solder bumps facilitates flip chip assembly.

82. 发明授权

US08936961B2 Removal of stressor layer from a spalled layer and method of making a bifacial solar cell using the same 有权
标题翻译：从剥落层去除应力层和使用其形成双面太阳能电池的方法
公开(公告)号：US08936961B2
公开(公告)日：2015-01-20
申请号：US13481795
申请日：2012-05-26
申请人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoartabari , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
发明人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoartabari , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L21/00
CPC分类号： H01L31/0684 , H01L21/02002 , H01L31/1896 , Y02E10/547
摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.
摘要翻译：以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。在主体半导体衬底和金属应力层之间形成切割层。受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。这种去除允许制造双面太阳能电池。

83. 发明授权

US08910848B2 Method for manufacturing beam, and beam 有权
标题翻译：制造梁和梁的方法
公开(公告)号：US08910848B2
公开(公告)日：2014-12-16
申请号：US13974934
申请日：2013-08-23
申请人： Steel-Invest Ltd.
发明人： Seppo Hauta-Aho
IPC分类号： B23K37/00 , B23K37/04 , E04C3/08 , B23K31/02 , E04B5/29 , E04C3/04
CPC分类号： E04C3/08 , B23K31/022 , B23K2101/28 , E04B5/29 , E04C3/06 , E04C3/16 , E04C2003/0413 , E04C2003/043 , E04C2003/0465
摘要： A beam includes at least three web plates that are connected to a bottom flange and top flange.
摘要翻译：梁包括连接到底部凸缘和顶部凸缘的至少三个腹板。

84. 发明授权

US08906779B2 Solar-powered energy-autonomous silicon-on-insulator device 有权
标题翻译：太阳能能源自主绝缘体上硅器件
公开(公告)号：US08906779B2
公开(公告)日：2014-12-09
申请号：US13717684
申请日：2012-12-17
申请人： International Business Machines Corporation
发明人： Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L21/46 , H01L27/142 , H01L31/068 , H01L21/84 , H01L27/12 , H01L31/18
CPC分类号： H01L27/142 , H01L21/84 , H01L27/092 , H01L27/1203 , H01L31/0504 , H01L31/068 , H01L31/1892 , Y02E10/547
摘要： A solar-powered autonomous CMOS circuit structure is fabricated with monolithically integrated photovoltaic solar cells. The structure includes a device layer including an integrated circuit and a solar cell layer. Solar cell structures in the solar cell layer can be series connected during metallization of the device layer or subsequently. The device layer and the solar cell layer are formed using a silicon-on-insulator substrate. Subsequent spalling of the silicon-on-insulator substrate through the handle substrate thereof facilitates production of a relatively thin solar cell layer that can be subjected to a selective etching process to isolate the solar cell structures.
摘要翻译：采用单片集成光伏太阳能电池制造的太阳能自主CMOS电路结构。该结构包括包括集成电路和太阳能电池层的器件层。太阳能电池层中的太阳能电池结构可以在器件层的金属化期间或之后串联连接。使用绝缘体上硅基板形成器件层和太阳能电池层。随后通过其处理衬底剥离绝缘体上硅衬底有利于生产可以进行选择性蚀刻工艺以隔离太阳能电池结构的相对薄的太阳能电池层。

85. 发明授权

US08877604B2 Device structure with increased contact area and reduced gate capacitance 有权
标题翻译：器件结构具有增加的接触面积和降低的栅极电容
公开(公告)号：US08877604B2
公开(公告)日：2014-11-04
申请号：US13717235
申请日：2012-12-17
申请人： International Business Machines Corporation
发明人： Thomas N. Adam , Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek
IPC分类号： H01L21/76 , H01L21/338 , H01L21/336 , H01L29/78 , H01L29/40 , H01L29/66
CPC分类号： H01L29/7848 , H01L29/045 , H01L29/0847 , H01L29/165 , H01L29/4983 , H01L29/66545 , H01L29/66772 , H01L29/7841 , H01L29/78618 , H01L29/78654
摘要： A FET structure including epitaxial source and drain regions includes large contact areas and exhibits both low resistivity and low parasitic gate to source/drain capacitance. The source and drain regions are laterally etched to provide recesses for accommodating low-k dielectric material without compromising the contact area between the source/drain regions and their associated contacts. A high-k dielectric layer is provided between the raised source/drain regions and a gate conductor as well as between the gate conductor and a substrate, such as an ETSOI or PDSOI substrate. The structure is usable in electronic devices such as MOSFET devices.
摘要翻译：包括外延源极和漏极区域的FET结构包括大的接触区域，并且具有低电阻率和低的寄生栅极至源极/漏极电容。源极和漏极区域被横向蚀刻以提供用于容纳低k电介质材料的凹部，而不损害源极/漏极区域及其相关联的接触之间的接触面积。高K电介质层设置在凸起的源极/漏极区域和栅极导体之间以及栅极导体和诸如ETSOI或PDSOI衬底之类的衬底之间。该结构可用于诸如MOSFET器件的电子器件中。

86. 发明授权

US08828504B2 Deposition of hydrogenated thin film 有权
标题翻译：沉积氢化薄膜
公开(公告)号：US08828504B2
公开(公告)日：2014-09-09
申请号：US12971243
申请日：2010-12-17
申请人： Osama Tobail , Ahmed Abou-Kandil , Mostafa M. El-Ashry , Jeehwan Kim , Paul M. Kozlowski , Mohamed Saad , Devendra K. Sadana
发明人： Osama Tobail , Ahmed Abou-Kandil , Mostafa M. El-Ashry , Jeehwan Kim , Paul M. Kozlowski , Mohamed Saad , Devendra K. Sadana
IPC分类号： C23C14/00 , C23C16/455 , C23C16/50 , H01L21/02 , C23C14/14 , C23C14/22
CPC分类号： C23C14/0021 , C23C14/14 , C23C14/22 , C23C16/45514 , C23C16/50 , H01L21/02123 , H01L21/02274
摘要： A hydrogenated thin film is formed in a controlled vacuum on a substrate by evaporating one or more solid materials and passing the resulting vapor and a hydrogen-containing gas into a space between two electrodes. One of the electrodes includes openings for allowing the vapor to enter the space. Plasma is generated within the space to cause dissociation of the hydrogen-containing gas and promote a reaction between the material(s) and hydrogen-containing gas.
摘要翻译：通过蒸发一种或多种固体材料并使得到的蒸气和含氢气体进入两个电极之间的空间，在受控真空中在基板上形成氢化薄膜。电极之一包括允许蒸汽进入空间的开口。在空间内产生等离子体以引起含氢气体的解离并促进材料和含氢气体之间的反应。

87. 发明授权

US08825555B2 Privacy-sensitive sample analysis 有权
标题翻译：隐私敏感的样本分析
公开(公告)号：US08825555B2
公开(公告)日：2014-09-02
申请号：US13173634
申请日：2011-06-30
申请人： Thomas R. Gross , Erich M. Ruetsche
发明人： Thomas R. Gross , Erich M. Ruetsche
IPC分类号： G06Q20/00 , G06Q20/38
CPC分类号： G06Q20/383 , G06F21/31 , G06F2221/2103 , H04L9/302 , H04L9/3221 , H04L9/3249 , H04L2209/42 , H04L2209/56 , H04L2209/88
摘要： Processes are described for provision of privacy-sensitive sample analysis results to a sample provider. The sample provider generates a cryptographic commitment encoding a secret value, r, and a sample identifier, s, associated with a sample container. The sample provider provides the commitment to an analysis provider in association with the sample container containing a sample for analysis. The analysis provider analyzes the sample to obtain a set of analysis results corresponding to the sample identifier, s, and generates a cryptographic pre-credential, σ′, corresponding to the sample identifier, s. The pre-credential, σ′, encodes the set of analysis results and the commitment. Completion of the pre-credential, σ′, requires knowledge of the secret value, r, in the commitment. In response to cryptographic proof of knowledge by the sample provider of at least the secret value, r, in the commitment encoded in the pre-credential, σ′, corresponding to the sample identifier, s, the analysis provider supplies the pre-credential, σ′, to the sample provider. The sample provider then completes the pre-credential, σ′ using the secret value, r, to obtain a cryptographic credential, σ, encoding the set of analysis results.
摘要翻译：描述了为样本提供者提供隐私敏感的样本分析结果的过程。样本提供者生成编码与样本容器相关联的秘密值r和样本标识符s的加密承诺。样品提供者提供与分析提供者的关联，包含样品用于分析的样品容器。分析提供者分析样本以获得与样本标识符s相对应的一组分析结果，并且生成与样本标识符对应的加密预凭证＆sgr;'。预认证“＆sgr”编码了一组分析结果和承诺。完成预先认证的＆sgr;'需要知道秘密价值，r，在承诺。响应于样本提供者的知识的加密证明至少在预凭证中编码的承诺中的秘密值r对应于样本标识符s，分析提供者提供预凭证，＆sgr;'提供给示例提供者。样本提供商然后完成预凭证＆sgr;'使用秘密值r获得加密凭证＆sgr，编码分析结果集。

88. 发明授权

US08812396B2 E-wallet with cross-border capability 有权
标题翻译：具有跨境能力的电子钱包
公开(公告)号：US08812396B2
公开(公告)日：2014-08-19
申请号：US13668569
申请日：2012-11-05
申请人： MasterCard International Incorporated
发明人： Jose A. Alba , Michael J. Shaon , Aimee G. Musil , Michael S. Ameiss , Eric R. Kitchen , David Pardo , Anand Shekaran
IPC分类号： G06Q40/00
CPC分类号： G06Q10/0831 , G06Q20/363 , G06Q30/0633
摘要： Local shipping addresses in a first country are assigned to a plurality of consumers having physical addresses in at least one country other than the first country. A request is obtained, from an e-commerce retailer, for a corresponding one of the local shipping addresses. Product information, an indication of a desired form of shipping from the e-commerce retailer to the corresponding one of the local shipping addresses, and an indication of a desired form of shipping from the corresponding one of the local shipping addresses to a corresponding one of the physical addresses in the at least one country other than the first country are obtained. An indication of an estimated fully landed cost associated with the on-line shopping session is dispatched.
摘要翻译：第一国家的本地运送地址被分配给在除了第一国家之外的至少一个国家中具有物理地址的多个消费者。从电子商务零售商获得相应的一个本地运送地址的请求。产品信息，从电子商务零售商到相应的一个本地运送地址的期望的运送形式的指示，以及从相应的一个本地运送地址到相应的一个本地运送地址的期望的运送形式的指示获得除第一个国家以外的至少一个国家的物理地址。发出与在线购物会议相关的估计完全降落成本的指示。

89. 发明授权

US08775335B2 Privacy-aware on-line user role tracking 失效
标题翻译：隐私权在线用户角色跟踪
公开(公告)号：US08775335B2
公开(公告)日：2014-07-08
申请号：US13198790
申请日：2011-08-05
申请人： Ching-Yung Lin , Hanghang Tong , Fei Wang
发明人： Ching-Yung Lin , Hanghang Tong , Fei Wang
IPC分类号： G06F15/18
CPC分类号： G06K9/00523 , G06K9/6247 , G06Q30/02
摘要： Access is obtained to a first nonnegative factor matrix and a second nonnegative factor matrix obtained by factorizing a nonnegative asymmetric matrix which represents a set of data which tracks time-stamped activities of a plurality of entities. The first nonnegative factor matrix is representative of initial role membership of the entities, and the second nonnegative factor matrix is representative of initial role activity descriptions. At a given one of the time stamps, while holding a change in the first nonnegative factor matrix constant, a change in the second nonnegative factor matrix is updated to reflect time variance of the set of data at the given one of the time stamps, without accessing actual data values at previous ones of the time stamps. At the given one of the time stamps, while holding a change in the second nonnegative factor matrix constant, a change in the first nonnegative factor matrix is updated, to reflect the time variance of the set of data at the given one of the time stamps, without accessing the actual data values at the previous ones of the time stamps. The role membership of the entities and the role activity descriptions, at the given one of the time stamps, are updated based on the updating steps. A suitable technique for nonnegative symmetric matrices is also provided.
摘要翻译：获得第一非负因子矩阵和第二非负因子矩阵，该第二非负因子矩阵通过对表示一组跟踪多个实体的时间戳活动的数据的非负非对称矩阵进行分解而获得。第一个非负因子矩阵代表实体的初始角色成员，第二个非负因子矩阵代表初始角色活动描述。在给定的一个时间戳中，在保持第一非负因子矩阵常数的变化的同时，更新第二非负因子矩阵的变化，以反映给定的一个时间戳上的数据集的时间方差，而没有访问以前的时间戳的实际数据值。在给定的一个时间标记中，在保持第二非负因子矩阵常数的变化的同时，更新第一非负因子矩阵的变化，以反映给定的一个时间戳的数据集的时间方差，而不访问前一个时间戳的实际数据值。在给定的一个时间戳上，实体的角色成员身份和角色活动描述将根据更新步骤进行更新。还提供了一种用于非负对称矩阵的合适技术。

90. 发明授权

US08763906B2 Enhanced-density barcode 失效
标题翻译：增强密度条形码
公开(公告)号：US08763906B2
公开(公告)日：2014-07-01
申请号：US13570829
申请日：2012-08-09
申请人： Michael Peter Kuyper-Hammond , Michael Charles Osborne , Tamas Visegrady
发明人： Michael Peter Kuyper-Hammond , Michael Charles Osborne , Tamas Visegrady
IPC分类号： G06K7/10
CPC分类号： G06K19/06028
摘要： A method of decoding a two-dimensional enhanced-density barcode. A first and a second barcode are encoded in the enhanced-density barcode. The enhanced-density barcode includes a set of blocks. Each block includes a predefined number of sub-pixels. The blocks of the enhanced-density barcode being arranged relatively to each other in a geometrical lattice having a first and a second lattice direction. The method includes the steps of distorting of the enhanced-density barcode in the first lattice direction, resulting in a first distorted barcode, distorting of the enhanced-density barcode in the second lattice direction, resulting in a second distorted barcode, reconstructing the first barcode by low-pass filtering the first distorted barcode, reconstructing the second barcode by low-pass filtering the second distorted barcode.
摘要翻译：一种解码二维增强密度条形码的方法。在增强密度条形码中编码第一和第二条形码。增强密度条形码包括一组块。每个块包括预定数量的子像素。增强密度条形码的块在具有第一和第二格子方向的几何格子中彼此相对地布置。该方法包括以下步骤：使加强密度条形码在第一格子方向上失真，导致第一失真条形码，第二格子方向上增强密度条形码的失真，导致第二失真条形码，重建第一条形码通过对第一失真条形码进行低通滤波，通过对第二失真条形码进行低通滤波来重构第二条形码。

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