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81. 发明授权

US08450859B2 Semiconductor device mounted structure and its manufacturing method 有权
标题翻译：半导体器件安装结构及其制造方法
公开(公告)号：US08450859B2
公开(公告)日：2013-05-28
申请号：US13000391
申请日：2009-10-27
申请人： Naomichi Ohashi , Shigeaki Sakatani , Arata Kishi , Atsushi Yamaguchi , Hidenori Miyakawa
发明人： Naomichi Ohashi , Shigeaki Sakatani , Arata Kishi , Atsushi Yamaguchi , Hidenori Miyakawa
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/49894 , H01L21/563 , H01L23/49816 , H01L24/12 , H01L24/16 , H01L24/81 , H01L2224/10126 , H01L2224/13099 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13566 , H01L2224/16058 , H01L2224/16225 , H01L2224/73203 , H01L2224/812 , H01L2224/81801 , H01L2224/83192 , H01L2224/83194 , H01L2224/83855 , H01L2224/83856 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H05K3/3436 , H05K3/3452 , H05K3/3463 , H05K3/3484 , H05K2201/10977 , H05K2201/10992 , Y02P70/613 , H01L2924/01083 , H01L2924/00014 , H01L2924/0105
摘要： A semiconductor device mounted structure includes a semiconductor device having a plurality of first electrodes, a circuit board having a plurality of second electrodes, a plurality of bumps respectively formed on the plurality of first electrodes, a plurality of bonding members respectively positioned between the bumps and the second electrodes to electrically connect the first electrodes to the second electrodes via the bumps, and a plurality of reinforcing resin members respectively positioned around the bonding members so as to cover at least the bonding members and bonding regions between the bonding members and the bumps. Adjacent reinforcing resin members are spaced away from each other so as not to have contact with each other without being in contact with the semiconductor device. This semiconductor device mounted structure enhances the reliability of joints in impact resistance and makes it easy to repair it.
摘要翻译：半导体器件安装结构包括具有多个第一电极的半导体器件，具有多个第二电极的电路板，分别形成在多个第一电极上的多个凸块，分别位于凸块之间的多个接合部件和所述第二电极经由所述凸块将所述第一电极与所述第二电极电连接，以及分别位于所述接合部件周围的多个增强树脂部件，以至少覆盖所述接合部件和所述凸块之间的接合部件和接合部。相邻的增强树脂构件彼此间隔开，以便不与半导体器件接触而彼此不接触。该半导体器件安装结构提高了接头在耐冲击性方面的可靠性，并且使其易于修复。

82. 发明授权

US08408356B2 Storage box for electronic apparatus 有权
标题翻译：电子仪器储物箱
公开(公告)号：US08408356B2
公开(公告)日：2013-04-02
申请号：US12081498
申请日：2008-04-16
申请人： Atsushi Yamaguchi , Junichi Ishimine , Masahiro Suzuki , Tadashi Katsui , Shin-ichirou Kouno , Akira Takahashi , Akihiro Watanabe , Tomohiro Okazaki
发明人： Atsushi Yamaguchi , Junichi Ishimine , Masahiro Suzuki , Tadashi Katsui , Shin-ichirou Kouno , Akira Takahashi , Akihiro Watanabe , Tomohiro Okazaki
IPC分类号： A47B81/06 , E04F17/04 , F02K1/08 , G10K11/04 , H05K3/30 , H05K5/00 , H05K7/20
CPC分类号： H05K7/20736 , Y10T29/4913
摘要： A box-shaped enclosure of a storage box includes a deadening wall or walls defining a storage space between first and second planes. The storage space is open at the first and second planes. A deadening wall member extends along the first plane. An auxiliary box-shaped enclosure is connected to the box-shaped enclosure so as to close the first plane of the box-shaped enclosure. The auxiliary box-shaped enclosure defines an auxiliary space isolated from the storage space with a deadening wall member. The storage space is connected to the fresh air through the ventilation opening and the auxiliary space. The deadening wall or walls of the box-shaped enclosure and the deadening wall member serve to prevent the leakage of the operating sound.
摘要翻译：存储箱的箱形外壳包括限定第一和第二平面之间的存储空间的消音壁或壁。存储空间在第一和第二平面处打开。一个消音壁构件沿第一平面延伸。辅助箱形外壳连接到箱形外壳上，以封闭箱形外壳的第一平面。辅助箱形外壳限定了与储存空间隔离的辅助空间和消音壁构件。存储空间通过通风口和辅助空间连接到新鲜空气。箱状外壳和防振壁构件的消音壁或壁用于防止操作声音的泄漏。

83. 发明授权

US08368874B2 Beam irradiation device and laser radar system 失效
标题翻译：光束照射装置和激光雷达系统
公开(公告)号：US08368874B2
公开(公告)日：2013-02-05
申请号：US12695497
申请日：2010-01-28
申请人： Yoshiaki Maeno , Atsushi Yamaguchi , Mitsutaka Yamaguchi
发明人： Yoshiaki Maeno , Atsushi Yamaguchi , Mitsutaka Yamaguchi
IPC分类号： G01C3/00
CPC分类号： G01J1/4257 , G01S7/4811 , G01S7/4817 , G01S17/026 , G01S17/10 , G01S17/42 , G01S17/936
摘要： A beam irradiation device includes: a laser light source for emitting laser light; an actuator which scans a targeted area with the laser light; a servo optical system which changes a propagating direction of servo light in response to driving of the actuator; a photodetector which receives the servo light to output a signal depending on a light receiving position of the servo light; an actuator controlling section which controls the actuator based on the signal to be outputted from the photodetector; and a laser controlling section which controls the laser light source based on the signal to be outputted from the photodetector. The laser controlling section controls the laser light source to emit the laser light in a pulse manner at a timing when the light receiving position of the servo light coincides with a predetermined targeted position.
摘要翻译：光束照射装置包括：用于发射激光的激光源; 用激光扫描目标区域的致动器; 伺服光学系统，其响应于致动器的驱动而改变伺服光的传播方向; 接收所述伺服光以根据所述伺服光的光接收位置输出信号的光电检测器; 致动器控制部，其基于从所述光检测器输出的信号来控制所述致动器; 以及激光控制部，其基于从光电检测器输出的信号来控制激光光源。在伺服光的光接收位置与预定目标位置一致的时刻，激光控制部分控制激光光源以脉冲方式发射激光。

84. 发明申请

US20130002859A1 INFORMATION ACQUIRING DEVICE AND OBJECT DETECTING DEVICE 审中-公开
标题翻译：信息获取设备和对象检测设备
公开(公告)号：US20130002859A1
公开(公告)日：2013-01-03
申请号：US13614825
申请日：2012-09-13
申请人： Atsushi YAMAGUCHI , Nobuo Iwatsuki , Katsumi Umeda
发明人： Atsushi YAMAGUCHI , Nobuo Iwatsuki , Katsumi Umeda
IPC分类号： H04N7/18
CPC分类号： G01S17/48 , G01B11/25 , G01B11/2513 , G01C3/08
摘要： Laser light emitted from a laser light source is converted into light having a dot pattern by a projection optical system for projection onto a target area. The projection optical system is configured such that the density of dots in a peripheral portion of the dot pattern is smaller than that in a center portion of the dot pattern in the target area. A dot pattern captured by irradiating a dot pattern onto a reference plane is divided into segment areas. A distance to each segment area is acquired by matching between dots in each segment area, and a dot pattern acquired by capturing an image of the target area at the time of distance measurement. The segment areas are set such that a segment area in the peripheral portion of the dot pattern is larger than a segment area in the center portion of the dot pattern.
摘要翻译：从激光光源发射的激光由投射光学系统转换成具有点图案的光，用于投影到目标区域上。投影光学系统被配置为使得点图案的周边部分中的点的密度小于目标区域中的点图案的中心部分中的点的密度。通过将点图案照射到参考平面上捕获的点图案被划分成段区域。通过在每个区段区域中的点之间的匹配以及通过在距离测量时捕获目标区域的图像而获得的点图案来获取与每个区段区域的距离。片段区域被设置为使得点图案的周边部分中的片段区域大于点图案的中心部分中的片段区域。

85. 发明授权

US08293370B2 Bonding material, bonded portion and circuit board 有权
标题翻译：接合材料，接合部分和电路板
公开(公告)号：US08293370B2
公开(公告)日：2012-10-23
申请号：US12376370
申请日：2007-08-03
申请人： Atsushi Yamaguchi , Kazuhiro Nishikawa , Hidenori Miyakawa
发明人： Atsushi Yamaguchi , Kazuhiro Nishikawa , Hidenori Miyakawa
IPC分类号： B32B15/04 , C22C12/00
CPC分类号： H05K3/321 , B23K35/025 , B23K35/26 , B23K35/262 , B23K35/264 , B23K35/3613 , B23K35/3618 , B23K35/362 , H01B1/22 , H05K3/3484 , Y10T403/479 , Y10T428/31678
摘要： Disclosed is a solder material which enables to realize a lower mounting temperature when an electronic component is mounted. Also disclosed are a solder paste and a conductive adhesive. Specifically disclosed is a solder material having a basic composition composed of Sn, Bi and In. This solder material may further contain at least one metal selected from the group consisting of Cu, Ge and Ni. A solder paste which enables to realize a low-temperature mounting can be obtained by blending a flux component into the solder material. A conductive adhesive which enables to realize a low-temperature mounting can be obtained by blending a resin component into the solder material.
摘要翻译：公开了一种焊接材料，其能够在安装电子部件时实现较低的安装温度。还公开了焊膏和导电粘合剂。具体公开了具有由Sn，Bi和In构成的基本组成的焊料。该焊料材料还可含有选自Cu，Ge和Ni中的至少一种金属。可以通过将助焊剂成分混合到焊料材料中来获得能够实现低温安装的焊膏。可以通过将树脂成分混合到焊料材料中来获得能够实现低温安装的导电粘合剂。

86. 发明授权

US08279595B2 Storage unit and information processing apparatus and method of cooling 有权
标题翻译：存储单元及信息处理装置及冷却方法
公开(公告)号：US08279595B2
公开(公告)日：2012-10-02
申请号：US12405292
申请日：2009-03-17
申请人： Junichi Ishimine , Atsushi Yamaguchi
发明人： Junichi Ishimine , Atsushi Yamaguchi
IPC分类号： H05K5/00 , H05K7/20 , A47B77/08
CPC分类号： G06F1/20 , G06F1/206 , H05K7/20736
摘要： A storage unit includes: a storage section containing an information processing apparatus; an intake section allowing intake of a cooling medium into the information processing apparatus for cooling the information processing apparatus; a discharge section receiving the cooling medium discharged from the information processing apparatus; a cooling medium flow generating section configured to control intake and discharge of the cooling medium; a partition section isolating the intake section and the discharge section from each other; an aperture formed in the partition section; a detector section configured to detect an inflow of the cooling medium, discharged from the discharge section, through the aperture; and a controller section configured to control the cooling medium flow generating section in accordance with a result of the detection of the detector section.
摘要翻译：存储单元包括：存储部分，其包含信息处理设备; 吸入部，其允许将冷却介质吸入信息处理装置中以冷却信息处理装置; 接收从信息处理装置排出的冷却介质的排出部; 冷却介质流产生部，被配置为控制冷却介质的进入和排出; 分隔部，其使进气部和排出部彼此隔离; 形成在所述分隔部中的孔; 检测器部，被配置为检测从所述排出部排出的冷却介质的流入; 以及控制部，其构成为根据检测部的检测结果来控制冷却介质流生成部。

87. 发明授权

US08182923B2 Conductive paste and mounting structure using the same 有权
标题翻译：导电胶和使用其的安装结构
公开(公告)号：US08182923B2
公开(公告)日：2012-05-22
申请号：US12427275
申请日：2009-04-21
申请人： Naomichi Ohashi , Hidenori Miyakawa , Atsushi Yamaguchi , Arata Kishi , Takayuki Higuchi
发明人： Naomichi Ohashi , Hidenori Miyakawa , Atsushi Yamaguchi , Arata Kishi , Takayuki Higuchi
IPC分类号： H01B1/22 , B32B15/08
CPC分类号： H01B1/22 , B23K35/025 , B23K35/262 , B23K2101/36 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H05K3/3484 , H05K2201/0272 , Y10T428/31681 , H01L2224/05599
摘要： A conductive paste includes a filler component and a flux component; the filler component including a first conductive filler and a second conductive filler having different melting points, and the melting point of the first conductive filler being higher than the melting point of the second conductive filler by 20° C. or more; the flux component including a first flux and a second flux having different melting points, the melting point of the first flux being higher than the melting point of the second flux, and the melting point of the first flux being higher than the melting point of the second conductive filler by 15° C. to 45° C.; and the melting point of the second flux being equal to or less than the melting point of the second conductive filler.
摘要翻译：导电浆料包括填料组分和助熔剂组分; 所述填充剂组分包括具有不同熔点的第一导电填料和第二导电填料，并且所述第一导电填料的熔点高于所述第二导电填料的熔点20℃或更高; 所述通量成分包括具有不同熔点的第一助熔剂和第二助熔剂，所述第一焊剂的熔点高于所述第二焊剂的熔点，所述第一焊剂的熔点高于所述熔点第二导电填料15℃至45℃。并且第二通量的熔点等于或小于第二导电填料的熔点。

88. 发明申请

US20120119219A1 NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE 有权
标题翻译： NITRIDE半导体元件和氮化物半导体封装
公开(公告)号：US20120119219A1
公开(公告)日：2012-05-17
申请号：US13297141
申请日：2011-11-15
申请人： Shinya Takado , Norikazu Ito , Atsushi Yamaguchi
发明人： Shinya Takado , Norikazu Ito , Atsushi Yamaguchi
IPC分类号： H01L29/20
CPC分类号： H01L21/02458 , H01L21/02381 , H01L21/02433 , H01L21/02499 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/4825 , H01L21/565 , H01L23/3114 , H01L23/4952 , H01L23/49562 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/045 , H01L29/154 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/66462 , H01L29/7784 , H01L29/7787 , H01L2224/06051 , H01L2224/451 , H01L2224/48247 , H01L2224/48257 , H01L2224/49111 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/12032 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability are provided. On a substrate (41), a buffer layer (44) including an AlN layer (47), a first AlGaN layer (48) (with an average Al component of 50%) and a second AlGaN layer (49) (with an average Al component of 20%) is formed. On the buffer layer (44), an element action layer including a GaN electron transfer layer (45) and an AlGaN electron supply layer (46) is formed. Thus, an HEMT element (3) is constituted.
摘要翻译：提供能够容纳宽范围厚度的GaN电子转移层，以便允许更大的器件设计自由度的氮化物半导体元件和具有优异的耐压性能和可靠性的氮化物半导体元件封装。在衬底（41）上，包括AlN层（47），第一AlGaN层（48）（平均Al成分为50％）和第二AlGaN层（49）（平均值）的缓冲层（44） Al成分为20％）。在缓冲层（44）上，形成包括GaN电子转移层（45）和AlGaN电子供给层（46）的元素作用层。因此，构成HEMT元件（3）。

89. 发明申请

US20120072132A1 STORAGE MEDIUM, PREDICTING APPARATUS, AND PREDICTING METHOD 有权
标题翻译：存储介质，预测设备和预测方法
公开(公告)号：US20120072132A1
公开(公告)日：2012-03-22
申请号：US13221112
申请日：2011-08-30
申请人： Hiroyuki Furuya , Atsushi Yamaguchi , Kazuhiro Nitta , Tadashi Katsui
发明人： Hiroyuki Furuya , Atsushi Yamaguchi , Kazuhiro Nitta , Tadashi Katsui
IPC分类号： G06F19/00
CPC分类号： G06F1/206 , H05K7/20209
摘要： A predicting apparatus includes an obtaining unit and a predicting unit. The obtaining unit included in the predicting apparatus obtains actual measurements of data about a fan being rotated at a predetermined revolution frequency N [rpm]. The predicting apparatus then predicts data about the fan to be rotated at a revolution frequency N′ that is different from the predetermined revolution frequency N based on the actual measurements of the data thus obtained.
摘要翻译：预测装置包括获取单元和预测单元。包含在预测装置中的获取单元获得关于以预定转速N [rpm]旋转的风扇的数据的实际测量值。然后，预测装置基于由此获得的数据的实际测量值，以与预定转速N不同的转速N'来预测要旋转的风扇的数据。

90. 发明申请

US20120067638A1 ELECTRONIC APPARATUS 有权
标题翻译：电子设备
公开(公告)号：US20120067638A1
公开(公告)日：2012-03-22
申请号：US13232338
申请日：2011-09-14
申请人： Daisuke YASUKAWA , Kazuhiko NAKANO , Hirofumi Watanabe , Atsushi YAMAGUCHI
发明人： Daisuke YASUKAWA , Kazuhiko NAKANO , Hirofumi Watanabe , Atsushi YAMAGUCHI
IPC分类号： H05K1/11
CPC分类号： H05K3/3468 , H05K3/3447
摘要： First and second terminals project from a circuit board and lie adjacent to each other with an interspace formed between the first and second terminals. An electronic apparatus further includes a projecting member projecting along a neighboring terminal which is one of the first and second terminals at such a position that the neighboring terminal is located between the projecting member and the interspace. The projecting member is located at an adjacent position adjacent to the neighboring terminal, to attract molten solder from the interspace toward the projecting member during soldering to join the first and second terminals to the circuit board.
摘要翻译：第一和第二端子从电路板突出并且彼此相邻并且在第一和第二端子之间形成间隙。一种电子设备还包括一个突出部件，该突出部件沿相邻端子突出，该相邻端子是相邻端子位于突出部件和间隙之间的位置上的第一端子和第二端子之一。突出构件位于与相邻端子相邻的相邻位置，以在焊接期间将熔融焊料从间隙吸引到突出构件，以将第一和第二端子连接到电路板。

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