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81. 发明申请

US20090179085A1 HEATED SHOWERHEAD ASSEMBLY 有权
标题翻译：加热淋浴组件
公开(公告)号：US20090179085A1
公开(公告)日：2009-07-16
申请号：US11972072
申请日：2008-01-10
申请人： JAMES D. CARDUCCI , Olga Regelman , Kallol Bera , Douglas A. Buchberger , Paul Brillhart
发明人： JAMES D. CARDUCCI , Olga Regelman , Kallol Bera , Douglas A. Buchberger , Paul Brillhart
IPC分类号： B05B1/24 , B05B1/14
CPC分类号： H01J37/3244 , B32B43/00 , C23C16/4412 , C23C16/45565 , C23C16/4557 , C23C16/45591 , H01J37/32449 , H01J37/32724 , H01J2237/3343 , Y10T29/49815
摘要： The present invention generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.
摘要翻译：本发明通常包括可用于将处理气体供应到处理室中的加热喷头组件。处理室可以是蚀刻室。当处理气体从处理室排出时，衬底的均匀处理可能是困难的。当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。不均匀的等离子体可能导致不均匀的蚀刻。为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。第一区域对应于衬底的周边，而第二区域对应于衬底的中心。通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

82. 发明授权

US07540971B2 Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content 有权
标题翻译：使用在晶片表面上聚合蚀刻气体的等离子体蚀刻工艺，以及在独立供气气体区域中管理或控制气体的另外的聚合物，其中气体含量随时间和空间调制
公开(公告)号：US07540971B2
公开(公告)日：2009-06-02
申请号：US11414015
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449 , H01J2237/3347
摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.
摘要翻译：等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的环形区域，以及通过围绕工件边缘的泵送环从反应器排出气体。通过在蚀刻工艺气体中衍生出蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，通过在反应器中产生等离子体，通过施加VHF源功率和/或HF来在电介质膜中蚀刻高纵横比开口和/或LF偏压电力到天花板和/或静电卡盘上的电极。该方法进一步包括减缓聚合物的沉积速率，通过在气体喷射孔中注入氧或氮和/或高含氟气体，在工件的区域中通常为中心使蚀刻停止和/或增加蚀刻速率最小化并且通过气体注入孔调节氧气或氮气和/或高含氟气体的流量，以最小化工件中心和工件外围处的轮廓和蚀刻深度之间的差异。

83. 发明授权

US07431859B2 Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation 有权
标题翻译：在具有时间调制的不同径向气体注入区域中使用不同蚀刻和聚合物沉积速率的聚合蚀刻气体的等离子体蚀刻工艺
公开(公告)号：US07431859B2
公开(公告)日：2008-10-07
申请号：US11414017
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449
摘要： A plasma etch process includes injecting process gases with different compositions of chemical species through different radial gas injection zones of an overhead electrode to establish a desired distribution of chemical species among the plural gas injection zones.
摘要翻译：等离子体蚀刻工艺包括通过塔顶电极的不同径向气体注入区域注入具有不同组成的化学物质的工艺气体，以在多个气体注入区域之间建立所需的化学物质分布。

84. 发明申请

US20070251917A1 Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content 有权
标题翻译：使用在晶片表面上聚合蚀刻气体的等离子体蚀刻工艺，以及在独立供气气体区域中管理或控制气体的另外的聚合物，其中气体含量随时间和空间调制
公开(公告)号：US20070251917A1
公开(公告)日：2007-11-01
申请号：US11414015
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
IPC分类号： C03C25/68 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449 , H01J2237/3347
摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.
摘要翻译：等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的环形区域，以及通过围绕工件边缘的泵送环从反应器排出气体。通过在蚀刻工艺气体中衍生出蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，通过在反应器中产生等离子体，通过施加VHF源功率和/或HF来在电介质膜中蚀刻高纵横比开口和/或LF偏压电力到天花板和/或静电卡盘上的电极。该方法进一步包括减缓聚合物的沉积速率，通过在气体喷射孔中注入氧或氮和/或高含氟气体，在工件的区域中通常为中心使蚀刻停止和/或增加蚀刻速率最小化并且通过气体注入孔调节氧气或氮气和/或高含氟气体的流量，以最小化工件中心和工件外围处的轮廓和蚀刻深度之间的差异。

85. 发明申请

US20070097580A1 Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor 有权
标题翻译：在电容耦合等离子体反应器中以均匀的温度冷却晶片载体的方法
公开(公告)号：US20070097580A1
公开(公告)日：2007-05-03
申请号：US11410782
申请日：2006-04-24
申请人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H02H5/04
CPC分类号： H01L21/67109
摘要： A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.
摘要翻译：在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂，工件支撑件的内部流动通道构成制冷回路的蒸发器。该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。

86. 发明申请

US20060193102A1 METHOD AND APPARATUS TO CONFINE PLASMA AND TO ENHANCE FLOW CONDUCTANCE 有权
标题翻译：限制等离子体和加强流动导管的方法和装置
公开(公告)号：US20060193102A1
公开(公告)日：2006-08-31
申请号：US11381399
申请日：2006-05-03
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
IPC分类号： H01T23/00
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
摘要翻译：本发明的实施例一般涉及在等离子体处理室中使用的环形环。在一个实施例中，环形环包括内壁，上外壁，下外壁，限定在上外壁和下外壁之间的台阶，顶表面和底壁。台阶从下外壁向上和向外形成，并从上外壁向内和向下形成。环形环可以由诸如碳化硅和铝的导电材料制成。

87. 发明申请

US20130118686A1 TEMPERATURE CONTROLLED CHAMBER LINER 有权
标题翻译：温度控制室内衬
公开(公告)号：US20130118686A1
公开(公告)日：2013-05-16
申请号：US13632585
申请日：2012-10-01
申请人： James D. Carducci , Kallol Bera , Nipun Misra , Larry D. Elizaga
发明人： James D. Carducci , Kallol Bera , Nipun Misra , Larry D. Elizaga
IPC分类号： H01J37/32
CPC分类号： H01J37/32495 , H01J37/32522 , Y10T428/13 , Y10T428/21 , Y10T428/24273 , Y10T428/24479
摘要： A liner for a semiconductor processing chamber and a semiconductor processing chamber are provided. In one embodiment, a liner for a semiconductor processing chamber includes a body having an outwardly extending flange. A plurality of protrusions extend from a bottom surface of the flange. The protrusions have a bottom surface defining a contact area that is asymmetrically distributed around the bottom surface of the flange.
摘要翻译：提供了一种用于半导体处理室和半导体处理室的衬垫。在一个实施例中，用于半导体处理室的衬垫包括具有向外延伸凸缘的本体。多个凸起从凸缘的底表面延伸。突起具有限定在凸缘的底表面周围不对称地分布的接触区域的底表面。

88. 发明授权

US08236105B2 Apparatus for controlling gas flow in a semiconductor substrate processing chamber 失效
标题翻译：用于控制半导体衬底处理室中的气体流动的装置
公开(公告)号：US08236105B2
公开(公告)日：2012-08-07
申请号：US10821310
申请日：2004-04-08
申请人： Kallol Bera , Heeyeop Chae , Hamid Tavassoli , Yan Ye
发明人： Kallol Bera , Heeyeop Chae , Hamid Tavassoli , Yan Ye
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67069 , C23C16/4412 , C23C16/45591 , C23C26/00 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： Apparatus for controlling the flow of a gas between a process region and an exhaust port in a semiconductor substrate processing chamber is provided. The apparatus includes at least one restrictor plate supported within the semiconductor processing chamber and at least partially circumscribing a substrate support pedestal. The restrictor plate is adapted to control the flow of at least one gas flowing between the process region and the exhaust port.
摘要翻译：提供了一种用于控制半导体衬底处理室中的处理区域和排气口之间的气体流动的装置。该装置包括支撑在半导体处理室内的至少一个限制板，并且至少部分地限定基板支撑基座。限流板适于控制在处理区域和排气口之间流动的至少一种气体的流动。

89. 发明申请

US20070081295A1 Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution 有权
标题翻译：具有均匀温度分布的冷却/加热晶片支架的电容耦合等离子体反应器
公开(公告)号：US20070081295A1
公开(公告)日：2007-04-12
申请号：US11409292
申请日：2006-04-21
申请人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67069 , H01L21/67248 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.
摘要翻译：用于处理工件的等离子体反应器包括反应室，用于支撑工件的室内的静电卡盘，耦合以向静电卡盘施加RF功率的RF等离子体偏置功率发生器和在静电卡盘内具有蒸发器的制冷回路，制冷剂入口和制冷剂出口。优选地，蒸发器包括分布在静电卡盘的顶表面下方的平面中的曲折通道。优选地，蒸发器内的制冷剂在气相和液相之间分配。结果，静电吸盘和蒸发器内的制冷剂之间的热传递是恒温过程。该特征改善了静电卡盘的直径上的温度分布的均匀性。

90. 发明申请

US20070081294A1 Capacitively coupled plasma reactor having very agile wafer temperature control 有权
标题翻译：具有非常敏捷的晶片温度控制的电容耦合等离子体反应器
公开(公告)号：US20070081294A1
公开(公告)日：2007-04-12
申请号：US11408333
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.
摘要翻译：用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制气体阀响应于温度探头的输出与所需温度之间的差异。

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