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81. 发明授权

US5833447A Combustion process and apparatus therefore containing separate injection of fuel and oxidant streams 失效
标题翻译：因此，燃烧过程和装置包含单独注入燃料和氧化剂流
公开(公告)号：US5833447A
公开(公告)日：1998-11-10
申请号：US714743
申请日：1996-09-13
申请人： Pierre Bodelin , Patrick Recourt , Lahcen Ougarane
发明人： Pierre Bodelin , Patrick Recourt , Lahcen Ougarane
IPC分类号： F23C99/00 , C03B5/235 , F23C5/14 , F23C7/02 , F23D14/22 , F23D14/32 , F23D99/00 , F23M5/02 , F23M3/02
CPC分类号： C03B5/2353 , F23D14/22 , F23D14/32 , F23M5/025 , F23D2900/00013 , Y02P40/55
摘要： A burner assembly having improved flame length and shape control is presented, which includes in exemplary emodiments at least one fuel fluid inlet and at least one oxidant fluid inlet, means for transporting the fuel fluid from the fuel inlet to a plurality of fuel outlets, the fuel fluid leaving the fuel outlets in fuel streams that are injected into a combustion chamber, means for transporting the oxidant fluid from the oxidant inlets to at least one oxidant outlet, the oxidant fluid leaving the oxidant outlets in oxidant fluid streams that are injected into the combustion chamber, with the fuel and oxidant outlets being physically separated, and geometrically arranged in order to impart to the fuel fluid streams and the oxidant fluid streams angles and velocities that allow combustion of the fuel fluid with the oxidant in a stable, wide, and luminous flame. Alternatively, injectors may be used alone or with the refractory block to inject oxidant and fuel gases. The burner assembly affords improved control over flame size and shape and may be adjusted for use with a particular furnace as required.
摘要翻译：提供了具有改进的火焰长度和形状控制的燃烧器组件，其包括在示例性实施例中至少一个燃料流体入口和至少一个氧化剂流体入口，用于将燃料流体从燃料入口输送到多个燃料出口的装置，将燃料出口离开燃料出口的燃料流注入到燃烧室中的装置，用于将氧化剂流体从氧化剂入口输送到至少一个氧化剂出口的装置，氧化剂流体在注入氧化剂流体的氧化剂流体流中离开氧化剂出口燃烧室，燃料和氧化剂出口在物理上分离，并且几何地布置以便赋予燃料流体流和氧化剂流体流的角度和速度，其允许燃料流体与氧化剂在稳定的，宽的和发光的火焰。或者，喷射器可以单独使用或与耐火块一起使用以注入氧化剂和燃料气体。燃烧器组件提供了对火焰尺寸和形状的改进的控制，并且可以根据需要调节用于特定的炉。

82. 发明授权

US5814741A Metal sampling method and system for non-hydrolyzable gases 失效
标题翻译：非水解气体的金属取样方法和系统
公开(公告)号：US5814741A
公开(公告)日：1998-09-29
申请号：US709875
申请日：1996-09-09
申请人： Hwa-Chi Wang , Richard J. Udischas
发明人： Hwa-Chi Wang , Richard J. Udischas
IPC分类号： G01N1/00 , G01N1/02 , G01N1/22 , G01N21/31
CPC分类号： G01N1/2205 , G01N2001/2223 , G01N2001/2282
摘要： Provided is a portable system useful for sampling both particulate and vapor phase metallic impurities from gases that cannot by hydrolyzed. The system comprises a valve for introducing and controlling the exhaust of the gas to be sampled from the system. The metallic impurities are entrapped on a filter, with one filter being operated at ambient temperature to remove particulate metallic impurities, and with another filter being operated at a temperature below ambient in order to remove vapor phase metallic impurities. In operating the system, the system is first back-filled to create a pressure equilibrium across the valve which introduces the gas to the first filter. The flow of gas through the entire sampling system is controlled by means of a critical orifice located between the filter and the valve for controlling exhaust of the gas from the system. The entire system is portable and allows for transport of the system with its filters to a laboratory in order to permit the most sophisticated and effective analysis of the metallic impurities in the filters under controlled laboratory conditions.
摘要翻译：提供了一种便携式系统，其用于从不能水解的气体中采集颗粒和气相金属杂质。该系统包括用于引入和控制从系统取样的气体的排气的阀。金属杂质被夹带在过滤器上，一个过滤器在环境温度下操作以除去颗粒状金属杂质，另一个过滤器在低于环境温度下操作，以除去气相金属杂质。在操作系统时，系统首先被填充以在阀上产生压力平衡，该压力平衡将气体引入第一过滤器。通过整个采样系统的气体流动通过位于过滤器和阀之间的临界孔来控制，用于控制来自系统的气体的排出。整个系统是便携式的，并允许将其过滤器的系统运输到实验室，以便在受控实验室条件下允许对过滤器中的金属杂质进行最复杂和有效的分析。

83. 发明授权

US5409159A Apparatus and methods for inerting solder during wave soldering operations 失效
标题翻译：在波峰焊操作期间使焊料无效的装置和方法
公开(公告)号：US5409159A
公开(公告)日：1995-04-25
申请号：US253248
申请日：1994-06-02
申请人： Robert W. Connors , Frederick W. Giacobbe , Benjamin J. Jurcik, Jr. , Frederic Rotman , Kevin P. McKean
发明人： Robert W. Connors , Frederick W. Giacobbe , Benjamin J. Jurcik, Jr. , Frederic Rotman , Kevin P. McKean
IPC分类号： B23K31/02 , B23K1/08 , B23K3/06 , H05K3/34 , B23K1/00 , B23K3/00
CPC分类号： B23K3/0653 , B23K1/085
摘要： A circuit board is wave soldered as it is carried by a conveyor through a solder wave established in a solder reservoir. Disposed on both sides of the solder wave are gas plenums which discharge shield gas. Each gas plenum includes a top wall, a side wall, and a bottom wall. The side wall is spaced horizontally from the wave, and the bottom wall is submerged within the solder. The side and (optionally) top walls include orifices for directing shield gas (i) at high velocity toward the solder wave to protect the solder wave with an atmosphere of shield gas, and (ii) upwardly toward an underside of the circuit board to strip entrained air therefrom. Instead of being submerged within the solder, the bottom wall could be spaced above the solder and provided with orifices to emit shield gas downwardly between the plenum and solder reservoir to create an inert atmosphere above the solder. Dividers disposed within the plenum form sub-chambers communicating with orifices in respective walls of the plenum so that different gas velocities can be entitled from the orifices. The gas plenums can be rotatably adjustable and further adjustable either vertically or horizontally.
摘要翻译：电路板通过由焊料储存器中建立的焊波传输通过波导焊接。在焊波两侧设置放电保护气体的气室。每个气室包括顶壁，侧壁和底壁。侧壁与波浪水平隔开，底壁浸没在焊料内。侧壁和（可选地）顶壁包括用于将屏蔽气体（i）以高速度朝向焊波引导的孔，以保护焊波与保护气体的气氛，以及（ii）向上朝向电路板的下侧以剥离夹带空气。代替浸没在焊料中，底壁可以在焊料上方间隔开并且具有孔，以在气室和焊料储存器之间向下发射屏蔽气体，以在焊料上方产生惰性气氛。设置在增压室内的分隔器形成与气室的相应壁中的孔连通的子室，使得可以从孔中获得不同的气体速度。气室可以可旋转调节，并可进一步垂直或水平调节。

84. 发明公开

US20240162042A1 ETCHING METHODS WITH ALTERNATING NON-PLASMA AND PLASMA ETCHING PROCESSES 审中-公开
公开(公告)号：US20240162042A1
公开(公告)日：2024-05-16
申请号：US17974246
申请日：2022-10-26
申请人： American Air Liquide, Inc.
发明人： Xiangyu GUO , Nathan STAFFORD
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655
摘要： A method for forming an aperture pattern in a substrate, the substrate including a film disposed thereon and a patterned mask layer disposed on the film, comprises 1) exposing the substrate to a vapor of a passivation molecule in a non-plasma condition for a period to form a surface protective layer on the patterned mask layer, 2) exposing the substrate to a plasma activated etch gas and plasma dry etching the substrate to form apertures over the patterned mask layer in the film with the plasma activated etch gas, and 3) repeating step 1) and 2) until a desired aperture pattern is formed in the film, wherein the surface protective layer is also formed on the sidewalls of the apertures formed in the film, wherein the passivation molecule has a boiling point equal to or larger than 20° C.

85. 发明授权

US11837474B2 Method to improve profile control during selective etching of silicon nitride spacers 有权
公开(公告)号：US11837474B2
公开(公告)日：2023-12-05
申请号：US17945631
申请日：2022-09-15
申请人： American Air Liquide, Inc.
发明人： Xiangyu Guo , James Royer , Venkateswara R. Pallem , Nathan Stafford
IPC分类号： H01L21/311 , H01L29/66 , H01L21/3105
CPC分类号： H01L21/31116 , H01L21/31058 , H01L29/6653
摘要： Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

86. 发明公开

US20230253200A1 PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF LANTHANIDE-CONTAINING FILMS 审中-公开
公开(公告)号：US20230253200A1
公开(公告)日：2023-08-10
申请号：US17666686
申请日：2022-02-08
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Daehyeon KIM , Junhyun SONG , Wontae NOH , Venkateswara R. PALLEM
IPC分类号： H01L21/02 , C07F5/00 , C23C16/40
CPC分类号： H01L21/02192 , C07F5/00 , H01L21/0228 , C23C16/409 , H01L21/02205
摘要： The disclosed lanthanide precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and at least one bidentate ligand. These precursors are suitable for depositing lanthanide containing films.

87. 发明申请

US20230095074A1 CURABLE FORMULATIONS FOR FORMING LOW-k DIELECTRIC SILICON-CONTAINING FILMS USING POLYCARBOSILAZANE 有权
公开(公告)号：US20230095074A1
公开(公告)日：2023-03-30
申请号：US17977619
申请日：2022-10-31
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Yumin LIU , Jean-Marc GIRARD , Peng ZHANG , Fan QIN , Gennadiy ITOV , Fabrizio MARCHEGIANI , Thomas J. LARRABEE , Venkateswara R. PALLEM
IPC分类号： C09D183/14
摘要： A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.

88. 发明申请

US20210102092A1 PERHYDROPOLYSILAZANE COMPOSITIONS AND METHODS FOR FORMING NITRIDE FILMS USING SAME 有权
公开(公告)号：US20210102092A1
公开(公告)日：2021-04-08
申请号：US16971873
申请日：2019-02-21
申请人： American Air Liquide, Inc. , L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
发明人： Antonio SANCHEZ , Gennadiy ITOV , Manish KHANDELWAL , Cole RITTER , Peng ZHANG , Jean-Marc GIRARD , Zhiwen WAN , Glenn KUCHENBEISER , David ORBAN , Sean KERRIGAN , Reno PESARESI , Matthew Damien STEPHENS , Yang WANG , Guillaume HUSSON , Grigory NIKIFOROV
IPC分类号： C09D183/16 , C08G77/62 , C08J5/18 , C08F4/72
摘要： A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)×(SiH2−)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

89. 发明授权

US10858271B2 Methods for producing high-concentration of dissolved ozone in liquid media 有权
公开(公告)号：US10858271B2
公开(公告)日：2020-12-08
申请号：US16046702
申请日：2018-07-26
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude , American Air Liquide, Inc.
发明人： Jan Mante , Vasuhi Rasanayagam , Midhun Joy , Rovshan Mahmudov , Siavash Isazadeh
IPC分类号： C02F1/78 , C02F1/72 , A01N59/00 , A61L2/18 , B01F3/08 , B01F3/20 , B01F5/10 , B01F15/00 , C01B13/10 , C02F1/32 , B01D53/22 , A61L2/20
摘要： Disclosed are methods for continuous production of ozone strong water, the methods comprising the steps of injecting an acidification agent into a pressurized feed water to maintain a pH value of the pressurized feed water below 7, diffusing a two-phase mixture of O2-O3 gas and recirculated water into a body of acidic pressurized water to dissolve ozone into the acidic pressurized water. The disclosed methods include simultaneously maintaining a start-up mode in an upper portion of the dissolution column that favors high efficiency of ozone mass transfer into the acidic pressurized water and a steady state mode in a lower portion of the dissolution column that favors a high concentration of dissolved ozone in the acidic pressurized water coexistent in the body of the acidic pressurized water, wherein an ozone concentration gradient is formed along a height of the body of the acidic pressurized water.

90. 发明授权

US10822673B1 Arsenic removal from lead concentrate by ozone treatment and reverse flotation 有权
公开(公告)号：US10822673B1
公开(公告)日：2020-11-03
申请号：US16716630
申请日：2019-12-17
申请人： American Air Liquide, Inc.
发明人： Sylvester Zuttah
IPC分类号： B03D1/02 , B03D1/06 , B03D1/002 , C22B1/11
摘要： Method for removing arsenic mineral from a lead concentrate by reverse flotation with an ozone pre-treatment. The method comprises the steps of: receiving a slurry of the lead concentrate that has previously undergone flotation processes, bubbling ozone into the slurry of the lead concentrate to remove reagents used in previous flotation processes, adding a sulfide salt to the slurry to depress lead mineral, adding an alkali to increase the pH of the slurry, adding a collector and then a frother to the slurry for a reverse flotation processing and floating the arsenic mineral out of the lead mineral to obtain a now-purified lead concentrate.

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