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    • 83. 发明申请
    • Lasers With InGaAsP Quantum Wells And GaAsP Barrier Layers
    • 具有InGaAsP量子阱和GaAsP阻挡层的激光器
    • US20140198817A1
    • 2014-07-17
    • US13740501
    • 2013-01-14
    • FINISAR CORPORATION
    • Ralph H. JohnsonGary Landry
    • H01S5/18
    • H01S5/18341B82Y20/00H01S5/18308H01S5/2004H01S5/2013H01S5/3054H01S5/34306H01S5/3434H01S5/34353
    • A laser can include an active region having: one or more quantum wells having InGaAsP; and two or more quantum well barriers having GaAsP bounding the one or more quantum wells, wherein the active region is devoid of Al. The laser emits light having about 850 nm. The one or more quantum wells can have a composition InxGa1-xAs1-yPy according to Equation 1: y=0.0018567*QW+1.18*x−0.14373, where QW is the width of the quantum well in Angstroms; x is mole fraction of In; and y is mole fraction of P or +/−0.1 thereof. The two or more quantum well barriers have a GaAs1-zPz composition with z ranging from about 0.30 to about 0.60, where 0.45 can be optimal. The two or more quantum well barriers have a thickness of about 30 to 60 Angstroms.
    • 激光器可以包括有源区域,其具有:具有InGaAsP的一个或多个量子阱; 以及两个或更多个量子阱屏障,其具有界定所述一个或多个量子阱的GaAsP,其中所述有源区域没有Al。 激光发射约850nm的光。 一个或多个量子阱可以具有根据等式1的组成In x Ga 1-x As 1-y P y:y = 0.0018567 * QW + 1.18×x-0.14373,其中QW是量子阱的宽度; x是In的摩尔分数; y是P的摩尔分数或+/- 0.1。 两个或更多个量子阱屏障具有GaAs约为0.30至约0.60的GaAs1-zPz组合物,其中0.45可以是最佳的。 两个或多个量子阱屏障具有约30至60埃的厚度。
    • 84. 发明申请
    • OPTICAL FIBER SECURING DEVICE
    • 光纤保护装置
    • US20140185995A1
    • 2014-07-03
    • US14095662
    • 2013-12-03
    • Finisar Corporation
    • David LeeDaniel KossowskiFrank FlensWilliam H. WangMichael Joseph McReynolds, JR.
    • G02B6/42
    • G02B6/4239G02B6/32G02B6/3838G02B6/4214G02B6/4221G02B6/4231G02B6/4233G02B6/425
    • An optical fiber securing device may include a passage, an epoxy well, an epoxy path, an optical fiber seat, and a protrusion. The passage may have an entrance and an exit, the passage configured to receive therein an optical fiber inserted through the entrance. The epoxy well may be configured to receive therein epoxy. The epoxy path may provide a pathway for epoxy between the epoxy well and the passage. The optical fiber seat may be configured to receive at least a portion of the optical fiber, the optical fiber seat configured to position an end of the optical fiber in optical alignment with a lens. The protrusion may define an upper boundary of the passage at the exit of the passage, the protrusion configured to restrain epoxy received within the passage such that the epoxy does not become interposed between the end of the optical fiber and the lens.
    • 光纤固定装置可以包括通道,环氧树脂井,环氧树脂路径,光纤座和突起。 通道可以具有入口和出口,通道构造成在其中容纳插入通过入口的光纤。 环氧树脂井可以被配置成在其中接收环氧树脂。 环氧树脂路径可以为环氧树脂井和通道之间的环氧树脂提供途径。 光纤座可以被配置为接收光纤的至少一部分,光纤座被配置成将光纤的端部定位成与透镜光学对准。 突出部可以限定通道出口处的通道的上边界,突出部被配置为限制容纳在通道内的环氧树脂,使得环氧树脂不会插入到光纤的端部和透镜之间。
    • 85. 发明授权
    • Monolithic power monitor and wavelength detector
    • 单片功率监视器和波长检测器
    • US08750714B2
    • 2014-06-10
    • US13316272
    • 2011-12-09
    • Henry M. DaghighianKevin J. McCallion
    • Henry M. DaghighianKevin J. McCallion
    • H04B10/00
    • H01S5/183H01L31/105H01L31/12H01L31/153H01S5/02248H01S5/0264H01S5/028H01S5/0683H01S5/0687
    • Monolithic single and/or dual detector structures are fabricated on the emitting surface of a VCSEL and/or on a lens or glass substrate configured to be positioned along the axis of emission of an optical light source. Each monolithic detector structure includes one or two PIN detectors fabricated from amorphous silicon germanium with carbon doping or amorphous germanium with hydrogen doping. The monolithic detectors may additionally include various metallization layers, buffer layers, and/or anti-reflective coatings. The monolithic detectors can be grown on 1550 NM VCSELs used in optical transmitters, including lasers with managed chirp and TOSA modules, to reduce power and real estate requirements of the optical transmitters, enabling the optical transmitters to be implemented in long-reach SFP+ transceivers.
    • 在VCSEL的发射表面上和/或在被配置为沿着光学光源的发射轴定位的透镜或玻璃衬底上制造单片单和/或双检测器结构。 每个单片检测器结构包括由具有碳掺杂的非晶硅锗或具有氢掺杂的无定形锗制成的一个或两个PIN检测器。 单片检测器可另外包括各种金属化层,缓冲层和/或抗反射涂层。 单片检测器可以在光发射机中使用的1550 NM VCSEL上生长,包括具有管理啁啾和TOSA模块的激光器,以减少光发射机的功率和不动产需求,使光发射机能够在长距离SFP +收发器中实现。
    • 88. 发明授权
    • Latching mechanisms for pluggable electronic devices
    • 可插拔电子设备的锁存机制
    • US08717770B2
    • 2014-05-06
    • US13096497
    • 2011-04-28
    • Long Van Nguyen
    • Long Van Nguyen
    • H05K5/00
    • H01R12/716G02B6/4261G02B6/4284G02B6/4292
    • Latching mechanisms for pluggable electronic devices. In one example embodiment, a latching mechanism includes a driver and a follower. The driver is configured to rotate about an axis between a latched positioned and an unlatched position. The follower is operably connected to the driver and configured to slide axially along an electronic device toward the driver as the driver is rotated from the unlatched position to the latched position and slide axially along the electronic device away from the driver as the driver is rotated from the latched position to the unlatched position.
    • 可插拔电子设备的锁存机制。 在一个示例性实施例中,锁定机构包括驱动器和跟随器。 驱动器被配置为围绕锁定位置和解锁位置之间的轴线旋转。 跟随器可操作地连接到驱动器并且被配置成当驾驶员从解锁位置旋转到闩锁位置时沿着电子设备轴向滑动,并且随着驾驶员从驾驶员旋转而沿着电子设备轴向滑动远离驾驶员 锁定位置到解锁位置。