专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US09263530B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US09263530B2
公开(公告)日：2016-02-16
申请号：US14140260
申请日：2013-12-24
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Chih-Ching Cheng , Tsung-Cheng Chang
IPC分类号： H01L29/778 , H01L29/207 , H01L29/20 , H01L29/66 , H01L29/36 , H01L29/10
CPC分类号： H01L29/207 , H01L29/1075 , H01L29/2003 , H01L29/36 , H01L29/66431 , H01L29/66439 , H01L29/66462 , H01L29/778 , H01L29/7786
摘要： A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly.
摘要翻译：本文公开的场效应晶体管（FET）包括衬底，设置在衬底上的C掺杂半导体层，设置在C掺杂半导体层上的沟道层和设置在沟道层上的电子供给层。 FET还包括设置在C掺杂半导体层和沟道层之间的扩散阻挡层，其中扩散阻挡层直接与沟道层接触。

82. 发明授权

US09093602B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09093602B2
公开(公告)日：2015-07-28
申请号：US13662565
申请日：2012-10-29
申请人： HUGA OPTOTECH INC.
发明人： Wei-Chih Wen , Shiou-Yi Kuo , Tai-Chun Wang
IPC分类号： H01L33/00 , H01L33/20 , H01L33/60 , H01L33/24 , H01L33/62
CPC分类号： H01L33/20 , H01L33/24 , H01L33/60 , H01L33/62
摘要： A semiconductor light emitting device includes a substrate having a main surface and an exposed surface; an epitaxial structure, disposed on the main surface of the substrate, having at least a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, wherein the first type layer has a first sidewall including at least a first etched surface and a second etched surface, wherein angles between the etched surfaces and the exposed surface are acute angles; and an electrode structure disposed on the epitaxial structure.
摘要翻译：半导体发光器件包括具有主表面和暴露表面的衬底; 外延结构，设置在所述基板的主表面上，具有至少第一类型半导体层，发光层和第二类型半导体层，其中所述第一类型层具有第一侧壁，所述第一侧壁至少包括第一蚀刻表面和第二蚀刻表面，其中蚀刻表面和暴露表面之间的角度是锐角; 以及设置在所述外延结构上的电极结构。

83. 发明授权

US09024351B2 Semiconductor light-emitting structure 有权
标题翻译：半导体发光结构
公开(公告)号：US09024351B2
公开(公告)日：2015-05-05
申请号：US13431985
申请日：2012-03-28
申请人： Der-Wei Tu , Wei-Chih Wen , Tai-Chun Wang , Po-Hung Lai , Chih-Ping Hsu
发明人： Der-Wei Tu , Wei-Chih Wen , Tai-Chun Wang , Po-Hung Lai , Chih-Ping Hsu
IPC分类号： H01L33/36 , H01L33/44
CPC分类号： H01L33/44 , H01L2933/0025
摘要： A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.
摘要翻译：提供了包括第一导电类型半导体层，第二导电类型半导体层，发光层，电极，绝缘层和粘合剂层的半导体发光结构。发光层设置在第一导电型半导体层和第二导电型半导体层之间。电极设置在第一导电型半导体层上。绝缘层覆盖第一导电类型半导体层和电极的一部分。粘合剂层设置在电极和绝缘层之间，以便粘合电极和绝缘层。

84. 发明授权

US08896012B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08896012B2
公开(公告)日：2014-11-25
申请号：US12943918
申请日：2010-11-10
申请人： Chih-Ching Cheng
发明人： Chih-Ching Cheng
IPC分类号： H01L29/72 , H01L33/38 , H01L33/20 , H01L33/08 , H01L33/44
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/44 , H01L2933/0016
摘要： A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, wherein the active layer is between the first semiconductor layer and the second semiconductor layer a trench penetrating through the second semiconductor layer and the active layer to expose the first semiconductor layer a first electrode disposed at a bottom of the trench, wherein the first electrode includes at least one first finger, an insulating layer covering the first electrode, and a second electrode including at least one second finger on the insulating layer, wherein the second finger overlaps with the first finger and the second finger has a width smaller than that of the trench.
摘要翻译：发光二极管包括基板，衬底上的第一半导体层，第一半导体层上方的有源层，有源层上方的第二半导体层，其中有源层位于第一半导体层和第二半导体层之间穿过所述第二半导体层和所述有源层的沟槽，以暴露所述第一半导体层设置在所述沟槽底部的第一电极，其中所述第一电极包括至少一个第一指状物，覆盖所述第一电极的绝缘层和所述第二电极在所述绝缘层上包括至少一个第二指状物，其中所述第二手指与所述第一手指重叠，并且所述第二手指的宽度小于所述沟槽的宽度。

85. 发明授权

US08823038B2 Semiconductor light-emitting structure 有权
标题翻译：半导体发光结构
公开(公告)号：US08823038B2
公开(公告)日：2014-09-02
申请号：US13447284
申请日：2012-04-16
申请人： Jun-Sheng Li , Kuo-Chen Wu , Wei-Chih Wen
发明人： Jun-Sheng Li , Kuo-Chen Wu , Wei-Chih Wen
IPC分类号： H01L33/00 , H01L33/20 , H01L33/38 , H01L33/40
CPC分类号： H01L33/20 , H01L33/38 , H01L33/40
摘要： A semiconductor light-emitting structure is provided, which includes a first doped type semiconductor layer, a light-emitting layer, a second doped type semiconductor layer, a first electrical transmission layer and at least one first conductor. The light-emitting layer is disposed on the first doped type semiconductor layer and the second doped type semiconductor layer is disposed on the light-emitting layer. The first electrical transmission layer is disposed on the first doped type semiconductor layer, in which a first interface is formed between the first electrical transmission layer and the first doped type semiconductor layer. The first conductor is disposed on the first doped type semiconductor layer. The first electrical transmission layer connects the first conductor. A second interface is formed between each of the first conductor and the first doped type semiconductor layer, and the resistance of the second interface is less than the resistance of the first interface.
摘要翻译：提供一种半导体发光结构，其包括第一掺杂型半导体层，发光层，第二掺杂型半导体层，第一电传输层和至少一个第一导体。发光层设置在第一掺杂型半导体层上，第二掺杂型半导体层设置在发光层上。第一电传输层设置在第一掺杂型半导体层上，其中在第一电传输层和第一掺杂型半导体层之间形成第一界面。第一导体设置在第一掺杂型半导体层上。第一电传输层连接第一导体。在第一导体和第一掺杂型半导体层中的每一个之间形成第二接口，并且第二接口的电阻小于第一接口的电阻。

86. 发明授权

US08779457B2 Electrode structure and light-emitting device using the same 有权
标题翻译：电极结构及使用其的发光装置
公开(公告)号：US08779457B2
公开(公告)日：2014-07-15
申请号：US12652279
申请日：2010-01-05
申请人： Tai Chun Wang , Wei Chih Wen
发明人： Tai Chun Wang , Wei Chih Wen
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L27/153 , H01L33/20 , H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： An electrode structure includes at least two first electrodes and at least two second electrodes configured to be electrically connected in parallel to a power supply. Each of the first electrodes includes at least one first pad and at least one first extending wire with one end connected to the first pad, and the at least two first electrodes are spaced apart from each other. Each of the second electrodes includes at least one second pad and at least one second extending wire with one end connected to the second pad, and the at least two second electrodes are spaced apart from each other.
摘要翻译：电极结构包括至少两个第一电极和被配置为与电源并联电连接的至少两个第二电极。每个第一电极包括至少一个第一焊盘和至少一个第一延伸焊丝，其一端连接到第一焊盘，并且所述至少两个第一电极彼此间隔开。每个第二电极包括至少一个第二垫和至少一个第二延伸线，其一端连接到第二垫，并且所述至少两个第二电极彼此间隔开。

87. 发明申请

US20140175517A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20140175517A1
公开(公告)日：2014-06-26
申请号：US14140260
申请日：2013-12-24
申请人： HUGA OPTOTECH INC. , EPISTAR CORPORATION
发明人： Chih-Ching CHENG , Tsung-Cheng CHANG
IPC分类号： H01L29/778 , H01L29/205 , H01L29/20 , H01L29/207
CPC分类号： H01L29/207 , H01L29/1075 , H01L29/2003 , H01L29/36 , H01L29/66431 , H01L29/66439 , H01L29/66462 , H01L29/778 , H01L29/7786
摘要： A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly.
摘要翻译：本文公开的场效应晶体管（FET）包括衬底，设置在衬底上的C掺杂半导体层，设置在C掺杂半导体层上的沟道层和设置在沟道层上的电子供给层。 FET还包括设置在C掺杂半导体层和沟道层之间的扩散阻挡层，其中扩散阻挡层直接与沟道层接触。

88. 发明申请

US20130140581A1 OPTICAL DEVICE 审中-公开
标题翻译：光学装置
公开(公告)号：US20130140581A1
公开(公告)日：2013-06-06
申请号：US13752350
申请日：2013-01-28
申请人： EPISTAR CORPORATION , HUGA OPTOTECH Inc.
发明人： Tzong-Liang Tsai , Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/46
摘要： An optical device is provided. Multi-layer structures are disposed on a substrate, wherein each of the multi-layer structures is consisting of at least two insulated layers with different refractive indexes formed alternately. A buffer layer covers the multi-layer structures, so that said multi-layer structures are disposed between the buffer layer and the substrate, wherein said buffer layer is an un-doped GaN based semiconductor layer. A first conductive semiconductor layer is disposed on the buffer layer. An active layer is disposed on said first conductive semiconductor layer. A second conductive semiconductor layer is disposed on said active layer and a transparent conductive layer is disposed on said second conductive semiconductor layer.
摘要翻译：提供光学装置。多层结构设置在基板上，其中多层结构中的每一个由交替形成不同折射率的至少两个绝缘层组成。缓冲层覆盖多层结构，使得所述多层结构设置在缓冲层和衬底之间，其中所述缓冲层是未掺杂的GaN基半导体层。第一导电半导体层设置在缓冲层上。有源层设置在所述第一导电半导体层上。第二导电半导体层设置在所述有源层上，并且透明导电层设置在所述第二导电半导体层上。

89. 发明申请

US20120258285A1 SUBSTRATE FOR FABRICATING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE FABRICATED THEREFROM 审中-公开
标题翻译：用于制造发光装置的基板和其制造的发光装置
公开(公告)号：US20120258285A1
公开(公告)日：2012-10-11
申请号：US13527598
申请日：2012-06-20
申请人： Chih-Ching Cheng
发明人： Chih-Ching Cheng
IPC分类号： B32B3/30
CPC分类号： H01L33/22 , C30B25/18 , C30B29/20 , C30B29/406 , H01L31/02366 , H01L33/16 , Y02E10/50 , Y10T428/24479
摘要： The invention provides a patterned substrate for fabricating a light emitting device having an improved surface structure and the light emitting device fabricated therefrom. The patterned substrate includes at least one platform region having a first facet direction for epitaxial growth; and a plurality of directly adjacent protruded portions surrounding the at least one platform region to isolate the at least one platform region from another platform region, wherein facet direction of each scattering surface of the plurality of directly adjacent protruded portions is substantially excluded from first facet direction. Since facet direction of each scattering surface of the plurality of directly adjacent protruded portions substantially do not include the first facet direction, during formation of the light emitting device, epitaxial growth is mainly conducted on the at least one platform region, which may prevent epitaxial defects from generating and enhance external quantum efficiency of the light emitting device.
摘要翻译：本发明提供一种用于制造具有改进的表面结构的发光器件和由其制造的发光器件的图案化衬底。图案化衬底包括具有用于外延生长的第一小面方向的至少一个平台区域; 以及围绕所述至少一个平台区域的多个直接相邻的突出部分，以将所述至少一个平台区域与另一平台区域隔离，其中所述多个直接相邻突出部分的每个散射表面的小平面方向基本上从第一小面方向排除。由于多个直接相邻的突出部分的每个散射表面的面方向基本上不包括第一小面方向，所以在形成发光器件期间，外延生长主要在至少一个平台区域上进行，这可以防止外延缺陷从产生和增强发光器件的外部量子效率。

90. 发明申请

US20120248405A1 SEMICONDUCTOR LIGHT-EMITTING STRUCTURE 有权
标题翻译：半导体发光结构
公开(公告)号：US20120248405A1
公开(公告)日：2012-10-04
申请号：US13431985
申请日：2012-03-28
申请人： Der-Wei Tu , Wei-Chih Wen , Tai-Chun Wang , Po-Hung Lai , Chih-Ping Hsu
发明人： Der-Wei Tu , Wei-Chih Wen , Tai-Chun Wang , Po-Hung Lai , Chih-Ping Hsu
IPC分类号： H01L33/06
CPC分类号： H01L33/44 , H01L2933/0025
摘要： A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.
摘要翻译：提供了包括第一导电类型半导体层，第二导电类型半导体层，发光层，电极，绝缘层和粘合剂层的半导体发光结构。发光层设置在第一导电型半导体层和第二导电型半导体层之间。电极设置在第一导电型半导体层上。绝缘层覆盖第一导电类型半导体层和电极的一部分。粘合剂层设置在电极和绝缘层之间，以便粘合电极和绝缘层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式