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1. 发明申请

US20170154987A1 NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS AND FABRICATION METHODS THEREOF 有权
公开(公告)号：US20170154987A1
公开(公告)日：2017-06-01
申请号：US14953240
申请日：2015-11-27
申请人： HUGA OPTOTECH INC. , EPISTAR CORPORATION
发明人： Shang-Ju TU
IPC分类号： H01L29/778 , H01L29/06 , H01L29/20 , H01L29/66
CPC分类号： H01L29/7787 , H01L29/0649 , H01L29/0653 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7786
摘要： Disclosure includes a normally-off field-effect semiconductor device and the fabrication method thereof. An antigrowth portion is formed on a template. A first semiconductor layer and a second semiconductor layer on the template form two heterojunctions for creating two-dimensional electron gas regions, while a heterojunction-free area defined by the antigrowth portion separate the heterojunctions. A dielectric layer is on the second semiconductor layer and above the antigrowth portion. Two channel electrodes formed on the second semiconductor layer are electrically coupled to the two-dimensional electron gas regions respectively. A gate electrode on the dielectric layer and above the antigrowth portion is used for control of conduction between the channel electrodes.

2. 发明授权

US09627523B2 High electron mobility transistor 有权
公开(公告)号：US09627523B2
公开(公告)日：2017-04-18
申请号：US15133207
申请日：2016-04-19
申请人： EPISTAR CORPORATION , HUGA OPTOTECH Inc.
发明人： Hsein-chin Chiu , Chien-Kai Tung , Heng-Kuang Lin , Chih-Wei Yang , Hsiang-Chun Wang
IPC分类号： H01L29/66 , H01L29/778 , H01L29/417 , H01L29/423 , H01L29/20 , H01L29/15 , H01L29/205
CPC分类号： H01L29/7784 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787
摘要： A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.

3. 发明申请

US20160190295A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20160190295A1
公开(公告)日：2016-06-30
申请号：US15065006
申请日：2016-03-09
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Heng-Kuang Lin , Chien-Kai Tung
IPC分类号： H01L29/778 , H01L29/267 , H01L29/22 , H01L29/20 , H01L29/205
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/205 , H01L29/22 , H01L29/267 , H01L29/7783 , H01L29/7787
摘要： A field effect transistor includes a substrate; a first semiconductor layer, disposed over the substrate; a second semiconductor layer, disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas; a p+ III-V semiconductor layer, disposed over the second semiconductor layer; and a depolarization layer, disposed between the second semiconductor layer and the p+ III-V semiconductor layer, wherein the depolarization layer includes a metal oxide layer.
摘要翻译：场效应晶体管包括衬底; 设置在所述基板上的第一半导体层; 第二半导体层，设置在所述第一半导体层上，其中所述第一半导体层和所述第二半导体层之间的界面具有二维电子气; 设置在所述第二半导体层上的p + III-V半导体层; 和去极化层，设置在第二半导体层和p + III-V半导体层之间，其中去极化层包括金属氧化物层。

4. 发明授权

US09356128B2 Semiconductor power device 有权
标题翻译：半导体功率器件
公开(公告)号：US09356128B2
公开(公告)日：2016-05-31
申请号：US14256733
申请日：2014-04-18
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Heng-Kuang Lin , Yih-Ting Kuo , Tsung-Cheng Chang
IPC分类号： H01L29/778 , H01L29/20 , H01L29/207 , H01L21/02 , H01L21/20 , H01L29/66 , H01L29/10
CPC分类号： H01L29/778 , H01L29/1075 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate; a first grading layer formed on the first semiconductor layer and comprising a first portion; a second grading layer formed on the first grading layer; a second semiconductor layer with a second lattice constant formed on the second grading layer; a first interlayer formed in the first grading layer and adjacent to the first portion of the first grading layer; and a second interlayer formed in the second grading layer; wherein the first interlayer comprises a first superlattice including a series of Alx1Ga1-x1N/Aly1Ga1-y1N alternate layers, (x1-y1)≧0.2, and the second interlayer comprises a second superlattice including a series of Alx2Ga1-x2N/Aly2Ga1-y2N alternate layers, (x2-y2)≧0.2, wherein the average of x1 and y1 is larger than that of x2 and y2.
摘要翻译：一种半导体功率器件，包括：衬底; 在基板上形成具有第一晶格常数的第一半导体层; 形成在所述第一半导体层上并包括第一部分的第一分级层; 形成在第一分级层上的第二分级层; 形成在所述第二分级层上的具有第二晶格常数的第二半导体层; 形成在第一分级层中并与第一分级层的第一部分相邻的第一中间层; 以及形成在所述第二分级层中的第二夹层; 其中所述第一夹层包括包括一系列Al x Ga 1-x N / Al y Ga 1-y 1 N交替层（x1-y1）≥0.2的第一超晶格，并且所述第二中间层包括第二超晶格，所述第二超晶格包括一系列Alx2Ga1-x2N / Aly2Ga1-y2N交替（x2-y2）≥0.2，其中x1和y1的平均值大于x2和y2的平均值。

5. 发明授权

US09331154B2 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US09331154B2
公开(公告)日：2016-05-03
申请号：US14328241
申请日：2014-07-10
申请人： EPISTAR CORPORATION , HUGA OPTOTECH, INC
发明人： Hsien-Chin Chiu , Chien-Kai Tung , Heng-Kuang Lin , Chih-Wei Yang , Hsiang-Chun Wang
IPC分类号： H01L29/66 , H01L29/20 , H01L29/417 , H01L29/423 , H01L29/778
CPC分类号： H01L29/7784 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787
摘要： A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.
摘要翻译：高电子迁移率晶体管包括衬底，布置在衬底上方的外延层，并且具有第一区域和围绕第一区域的第二区域，布置在第一区域中的矩阵电极结构以及电连接多个第一区域的多个第一桥的第二电极。矩阵电极结构包括布置在外延堆叠上的多个第一电极和布置在外延堆叠上并与多个第一电极相邻的多个第二电极。其中一个桥被布置在两个第二电极之间并跨过第一电极中的一个。

6. 发明申请

US20150340484A1 POWER DEVICE 审中-公开
标题翻译：电源设备
公开(公告)号：US20150340484A1
公开(公告)日：2015-11-26
申请号：US14715750
申请日：2015-05-19
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC
发明人： Ya-Yu YANG , Heng-Kuang LIN
IPC分类号： H01L29/778 , H01L29/267 , H01L29/423 , H01L29/06
CPC分类号： H01L29/7787 , H01L29/0619 , H01L29/0676 , H01L29/2003 , H01L29/267
摘要： This disclosure discloses a power device. The power device comprises a substrate; a first semiconductor layer having a first band gap and disposed on the substrate; a second semiconductor layer having a second band gap being lager than the first band gap and disposed on the first semiconductor layer; a third semiconductor layer having a third band gap smaller than the second band gap layer and disposed on the second semiconductor layer; a source electrode disposed on the third semiconductor layer; a base electrode electrically connecting the source electrode; and a p-type metal-oxide layer disposed between the base electrode and the third semiconductor layer.
摘要翻译：本公开公开了一种功率器件。功率器件包括衬底; 具有第一带隙并设置在所述基板上的第一半导体层; 第二半导体层，其具有比所述第一带隙大的第二带隙，并且设置在所述第一半导体层上; 第三半导体层，具有比所述第二带隙层小的第三带隙，并且设置在所述第二半导体层上; 设置在所述第三半导体层上的源电极; 电极连接所述源电极的基极; 以及设置在所述基极和所述第三半导体层之间的p型金属氧化物层。

7. 发明授权

US09157579B2 LED assembly with omnidirectional light field 有权
标题翻译： LED组件采用全向光场
公开(公告)号：US09157579B2
公开(公告)日：2015-10-13
申请号：US14309836
申请日：2014-06-19
申请人： HUGA OPTOTECH INC. , Interlight Optotech Corporation
发明人： Hong-Zhi Liu , Tzu-Chi Cheng
IPC分类号： F21K99/00 , F21V19/00 , H01L25/075 , F21Y101/02 , F21Y103/00 , F21Y111/00 , H01L33/62 , H05K1/11 , H05K3/28 , H05K3/32 , H05K3/34 , H05K3/36
CPC分类号： F21K9/00 , F21K9/232 , F21K9/90 , F21V19/003 , F21Y2103/10 , F21Y2107/00 , F21Y2115/10 , H01L25/0753 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H05K1/117 , H05K3/285 , H05K3/326 , H05K3/3405 , H05K3/366 , H05K2201/09481 , H05K2201/10674 , H01L2924/00014
摘要： Disclosed is an LED assembly having an omnidirectional light field. The LED assembly has a transparent substrate, LED chips, and first and second electrode plates. The transparent substrate comprises first and second surfaces facing to opposite orientations respectively. The transparent substrate has a via hole tunneling therethrough, which is formed with conductive material to provide a conductive via. The LED chips are mounted on the first surface. The first and second electrode plates are formed on the first and second surfaces respectively. The light emitting diode chips and the conductive via are electrically connected in series between the first and second electrode plates.
摘要翻译：公开了具有全向光场的LED组件。 LED组件具有透明基板，LED芯片以及第一和第二电极板。透明基板包括分别面对相反取向的第一表面和第二表面。透明基板具有穿过其中的通孔，其由导电材料形成以提供导电通孔。 LED芯片安装在第一表面上。第一和第二电极板分别形成在第一和第二表面上。发光二极管芯片和导电通孔串联地电连接在第一和第二电极板之间。

8. 发明申请

US20150276152A1 LED ASSEMBLY AND LED BULB USING THE SAME 有权
标题翻译： LED组件和使用其的LED灯泡
公开(公告)号：US20150276152A1
公开(公告)日：2015-10-01
申请号：US14676436
申请日：2015-04-01
申请人： HUGA OPTOTECH, INC. , INTERLIGHT OPTOTECH CORPORATION
发明人： Hwa SU , Tzu Chi CHENG , Hong Zhi LIU
IPC分类号： F21K99/00 , F21V23/06 , F21V29/70
CPC分类号： F21K9/64 , F21K9/232 , F21K9/90 , F21Y2101/00 , F21Y2115/10 , H01L25/0753 , H01L33/505 , H01L33/62 , H01L2224/48137 , H01L2924/0002 , H01L2924/00
摘要： An LED assembly, comprising: a light-transmissive substrate comprising a surface, a central region and a peripheral region surrounding the central region; a heat dissipation element, wherein a portion of the heat dissipation element is corresponding to the central region of the light-transmissive substrate; a first wavelength conversion layer arranged on the surface of the light-transmissive substrate and corresponding to the peripheral region of the light-transmissive substrate; a plurality of LED elements arranged on the first wavelength conversion layer; a second wavelength conversion layer arranged on the surface of the light-transmissive substrate and covering the plurality of LED elements and the first wavelength conversion layer; a plurality of conductive structures surrounding the plurality of LED elements and electrically connected thereto, wherein the plurality of conductive structures is formed on the surface and separated from each other; and a plurality of electrical contacts electrically connected to the plurality of conductive structures respectively.
摘要翻译：一种LED组件，包括：透光基板，包括表面，中心区域和围绕所述中心区域的周边区域; 散热元件，其中所述散热元件的一部分对应于所述透光基板的中心区域; 第一波长转换层，其布置在所述透光性基板的与所述透光性基板的周边区域对应的表面上; 布置在第一波长转换层上的多个LED元件; 第二波长转换层，布置在所述透光基板的表面上并覆盖所述多个LED元件和所述第一波长转换层; 围绕所述多个LED元件并与其电连接的多个导电结构，其中所述多个导电结构形成在所述表面上并彼此分离; 以及分别电连接到所述多个导电结构的多个电触点。

9. 发明申请

US20150137179A1 POWER DEVICE 审中-公开
标题翻译：电源设备
公开(公告)号：US20150137179A1
公开(公告)日：2015-05-21
申请号：US14084084
申请日：2013-11-19
申请人： HUGA OPTOTECH INC. , EPISTAR CORPORATION
发明人： Ya-Yu YANG , Heng-Kuang LIN
IPC分类号： H01L29/205 , H01L29/778 , H01L29/20
CPC分类号： H01L29/2003 , H01L29/1075 , H01L29/154 , H01L29/66462 , H01L29/7787
摘要： A power device disclosed herein comprises a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer and comprising a first element of group III, a third semiconductor layer formed on the second semiconductor layer and a plurality of first interlayers formed in the third semiconductor layer and comprising a second element of III group. The first element of III group and the second element of III group are the same. The second semiconductor layer and the plurality of first interlayers are doped with carbon.
摘要翻译：本文公开的功率器件包括衬底，形成在衬底上的第一半导体层，形成在第一半导体层上的第二半导体层，并且包括第三组的第一元件，形成在第二半导体层上的第三半导体层和多个的第一中间层形成在第三半导体层中并且包括III族的第二元素。 III组的第一个元素和III组的第二个元素是相同的。第二半导体层和多个第一中间层掺杂有碳。

10. 发明申请

US20150099320A1 LIGHT-EMITTING DIODE ASSEMBLY AND FABRICATION METHOD THEREOF 有权
标题翻译：发光二极管组件及其制造方法
公开(公告)号：US20150099320A1
公开(公告)日：2015-04-09
申请号：US14506364
申请日：2014-10-03
申请人： HUGA OPTOTECH INC. , Interlight Optotech Corporation
发明人： Tzu-Chi CHENG
IPC分类号： H01L25/13 , H01L33/62
CPC分类号： F21K9/90 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L24/97 , H01L25/0753 , H01L2224/2929 , H01L2224/293 , H01L2224/32245 , H01L2224/48229 , H01L2224/48249 , H01L2224/73265 , H01L2224/83005 , H01L2224/83192 , H01L2224/83851 , H01L2224/83862 , H01L2224/9202 , H01L2224/97 , H01L2924/00014 , H01L2924/12041 , H01L2924/181 , H01L2933/0033 , H01L2924/00 , H01L2224/83 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Disclosed embodiments include a manufacturing method for an LED assembly. Providing a first carrier, wherein several LED chips are formed on the first carrier, and providing a second carrier. Attaching the second carrier to the LED chips and detaching the first carrier from the LED chips but leaving the LED chips on the second carrier.
摘要翻译：公开的实施例包括用于LED组件的制造方法。提供第一载体，其中在第一载体上形成多个LED芯片，并提供第二载体。将第二载体连接到LED芯片并将第一载体从LED芯片分离，但将LED芯片留在第二载体上。

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